Patent application number | Description | Published |
20090105980 | PLASMA PROCESSING APPARATUS AND METHOD FOR DETECTING STATUS OF SAID APPARATUS - The invention provides a method for detecting and managing the status of a plasma processing apparatus with high sensitivity so as to enable long-term stable processing. In a plasma processing apparatus comprising a vacuum processing chamber | 04-23-2009 |
20100050349 | Cleaning apparatus and cleaning method - The invention provides a cleaning apparatus for removing particles attached to the fine roughness on the surface of an insulating body coated on the metal surface of a vacuum processing apparatus. The present cleaning apparatus comprises an adhesive sheet | 03-04-2010 |
20100050938 | Plasma processing apparatus - A plasma processing apparatus includes a sheet-like electrode for receiving high frequency signals from a plasma, a signal line connected to the electrode, a signal outputter which outputs high frequency signals from the electrode to the exterior, and a controller including of a physical quantity detecting unit, a measurement data storage unit, a measurement processing unit, and a control unit for controlling the apparatus parameters in response to signals from the measurement processing unit and performing control so as to stabilize the plasma condition. The signal line of the sheet-like electrode is formed between at least two layers of dielectric protection film formed on the surface of inner wall/inner cylinder | 03-04-2010 |
20100294315 | Cleaning Method - A cleaning method using a cleaning apparatus having an adhesive sheet, a conductive sheet in contact with a base material of the adhesive sheet, and a pressing member for pressing the conductive sheet onto the adhesive sheet. The pressing member includes a voltage applier, and a pressing force controller which presses the adhesive sheet onto a curved surface of a portion to be cleaned of a vacuum processing apparatus from above the conductive sheet. The method includes pressing the pressing member by a pressing force controlled via the pressing force controller to press the conductive sheet and the adhesive sheet to adhere an adhesive surface of the adhesive sheet to the curved surface of the portion to be cleaned, and applying a voltage to the conductive sheet or applying a voltage having a temporally changed polarity. | 11-25-2010 |
20110100954 | PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS - In processing a magnetic film composed for example of Fe, Co or Ni formed on a substrate and a nonvolatile metal containing the same in a vacuum reactor using a plasma generating gas for generating plasma and a gas containing C and O, a power applied to an antenna for generating plasma is time-modulated, wherein the feeding of gas containing C and O to the vacuum reactor is synchronized with the time-modulated antenna power so that the supply of gas containing C and O to the vacuum reactor is suppressed when the antenna power is high and the gas containing C and O is fed to the vacuum reactor when the antenna power is low. | 05-05-2011 |
20130200042 | PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS - In processing a magnetic film composed for example of Fe, Co or Ni formed on a substrate and a nonvolatile metal containing the same in a vacuum reactor using a plasma generating gas for generating plasma and a gas containing C and O, a power applied to an antenna for generating plasma is time-modulated, wherein the feeding of gas containing C and O to the vacuum reactor is synchronized with the time-modulated antenna power so that the supply of gas containing C and O to the vacuum reactor is suppressed when the antenna power is high and the gas containing C and O is fed to the vacuum reactor when the antenna power is low. | 08-08-2013 |
20130299091 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber, a flat-plate-like dielectric window, an induction coil, a flat electrode, a RF power source, a gas supply unit, and a sample stage on which a sample is mounted. A process gas supply plate is provided opposite the dielectric window on an inner side of the processing chamber, and a recess portion is formed in the flat electrode on a side opposite the induction coil corresponding to a gas supply position of the process gas supply plate. | 11-14-2013 |
20140116985 | METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT - The present invention provides a method for manufacturing a magnetoresistive element having a high selection ratio of an insulating layer to a free layer. The method for manufacturing a magnetoresistive element includes the steps of preparing (left drawing, middle drawing) a substrate on which a free layer, a fixed layer disposed under a first magnetic layer, and a barrier layer that is an insulating layer disposed between the free layer and the fixed layer are formed and processing (right drawing) the free layer by plasma etching, in which an insulating layer configuring the barrier layer contains a Ta element or a Ti element. | 05-01-2014 |
Patent application number | Description | Published |
20100282414 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus including a chamber having an inner wall with a protective film thereon and a sample stage disposed in the chamber in which plasma is generated by supplying high-frequency wave energy to processing gas to conduct plasma processing for a sample on the sample stage using the plasma. The apparatus includes a control device which determines, based on monitor values of a wafer attracting current monitor (Ip) to monitor a current supplied from a wafer attracting power source, an impedance monitor (Zp) to monitor plasma impedance viewed from a plasma generating power source, and an impedance monitor (Zb) to monitor a plasma impedance viewed from a bias power supply, presence or absence of occurrence of an associated one of abnormal discharge in inner parts, deterioration in insulation of an insulating film of a wafer attracting electrode, and abnormal injection in a gas injection plate. | 11-11-2010 |
20110139370 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus including a chamber having an inner wall with a protective film thereon and a sample stage disposed in the chamber in which plasma is generated by supplying high-frequency wave energy to processing gas to conduct plasma processing for a sample on the sample stage using the plasma. The apparatus includes a control device which determines, based on monitor values of a wafer attracting current monitor (Ip) to monitor a current supplied from a wafer attracting power source, an impedance monitor (Zp) to monitor plasma impedance viewed from a plasma generating power source, and an impedance monitor (Zb) to monitor a plasma impedance viewed from a bias power supply, presence or absence of occurrence of an associated one of abnormal discharge in inner parts, deterioration in insulation of an insulating film of a wafer attracting electrode, and abnormal injection in a gas injection plate. | 06-16-2011 |
20130000847 | PLASMA PROCESSING APPARATUS - There is provided a plasma processing apparatus enabling uniform plasma processing over the entire surface of a sample, without causing abnormal discharge even when the electromagnetic field strength is strong as in the case of the inductive coupling method. The plasma processing apparatus includes a process chamber, a first dielectric vacuum window, an inductive coil, a radio-frequency power supply, a gas supply unit, and a sample holder. The gas supply unit includes a second dielectric gas guide plate and a third dielectric island member. The second dielectric gas guide plate is located near below the vacuum window, and has a gas inlet port in the center. The third dielectric island member is provided in a gap between the vacuum window and the gas guide plate. The dielectric constant of the third dielectric is higher than the dielectric constant of the first and second dielectrics. | 01-03-2013 |