Patent application number | Description | Published |
20080268593 | METHODS FOR FABRICATING A CAPACITOR - A method for forming a capacitor comprises providing a substrate. A bottom electrode material layer is formed on the substrate. A first mask layer is formed on the bottom electrode material layer. A second mask layer is formed on the first mask layer. The second mask layer is patterned to form a patterned second mask layer in a predetermined region for formation of a capacitor. A plurality of hemispherical grain structures are formed on a sidewall of the patterned second mask layer. The first mask layer is etched by using the hemispherical grain structures and the patterned second mask layer as a mask, thereby forming a patterned first mask layer having a pattern. The pattern of the first mask layer is transferred to the bottom electrode material layer. And, a capacitor dielectric layer and a top electrode layer are formed on the bottom electrode material layer to form the capacitor. | 10-30-2008 |
20090114899 | RESISTANCE MEMORY AND METHOD FOR MANUFACTURING THE SAME - A resistance memory is manufactured using semiconductor processing to comprise planar dual-tip electrodes so that the electric field in the resistance memory is concentrated to reduce the number of fuses in the dielectric material and improve the device characteristics. The resistance memory comprises: a first memory cell including a first bottom electrode and a common top electrode; and a second memory cell including a second bottom electrode and the common top electrode shared with the first memory cell; wherein the first bottom electrode, the second bottom electrode and the common top electrode are disposed on the same plane and are separated by a resistive conversion layer; wherein the common top electrode is connected to the ground through a via, while the first bottom electrode and the second bottom electrode are connected to the source of a transistor through a plug, respectively. | 05-07-2009 |
20090191685 | METHOD FOR FORMING CAPACITOR IN DYNAMIC RANDOM ACCESS MEMORY - A method for forming a capacitor in a dynamic random access memory, comprising steps of: providing a semiconductor substrate having at least a transistor, whereon an interlayer dielectric layer having at least a first plug is formed so that the first plug is connected to the drain of the transistor; depositing an etching stop layer on the first plug and the interlayer dielectric layer; depositing a first insulating layer on the etching stop layer; forming at least a second plug on the first insulating layer and the etching stop layer so that the second plug is connected to the first plug; depositing a second insulating layer on the first insulating layer and the second plug; forming at least a mold cavity in the second insulating layer so that the aperture of the mold cavity is larger than the diameter of the second plug and there is a deviation between the mold cavity and the second plug; removing the first insulating layer in the mold cavity until the etching stop layer; depositing a first electrode layer to cover the second insulating layer, a sidewall portion of the mold cavity, the second plug and the etching stop layer; removing the second insulating layer so that the first electrode layer forms a single open-ended cavity; and depositing a dielectric layer and a second electrode layer. | 07-30-2009 |
20100163829 | CONDUCTIVE BRIDGING RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A conductive bridging random access memory (CBRAM) device and a method of manufacturing the same are provided. The CBRAM device includes a first electrode layer, a dielectric layer, a solid electrolyte layer, a second electrode layer and a metal layer. The solid electrolyte layer is located on the first electrode layer. The second electrode layer is located on the solid electrolyte layer. The metal layer is located near the solid electrolyte layer. The dielectric layer is located between the solid electrolyte layer and the metal layer. Since the metal layer is disposed near the solid electrolyte layer in the CBRAM device, it can generate a positive electric field during an erase operation, so as to accelerate a break of mutually connected metal filaments. | 07-01-2010 |
20100164062 | METHOD OF MANUFACTURING THROUGH-SILICON-VIA AND THROUGH-SILICON-VIA STRUCTURE - A method of manufacturing through-silicon-via (TSV) and a TSV structure are provided. The TSV structure includes a silicon substrate, an annular capacitor, a conductive through-via, a layer of low-k material, and a bump. The annular capacitor is within the silicon substrate and constituted of a first conductive layer, a capacitor dielectric layer, and a second conductive layer from the inside to the outside. The conductive through-via is disposed in the silicon substrate surrounded by the annular capacitor, and the layer of low-k material is between the annular capacitor and the conductive through-via. The bump is in touch with the conductive through-via for bonding other chip. | 07-01-2010 |
20110195186 | PLANE-TYPE FILM CONTINUOUS EVAPORATION SOURCE AND THE MANUFACTURING METHOD AND SYSTEM USING THE SAME - A manufacturing method and system using a plane-type film continuous evaporation source are disclosed, in which the manufacturing method comprises the steps of: providing a plane-type film continuous evaporation source, being a substrate having at least one evaporation material coated on a surface thereof while distributing the at least one evaporation material in a specific area of the substrate capable of covering all the plates to be processed by the evaporated evaporation material; arranging a heater inside the specific area to be used for enabling the at least one evaporation material to evaporate and thus spreading toward the processed plates. Thereby, the evaporated evaporation material can be controlled at the molecular/atomic level for enabling the same to form a film according to surface-nucleation, condensation and growth with superior evenness, nano-scale adjustability, specialized structure and function that can not be achieve by the films from conventional spray coating means. | 08-11-2011 |
20120032355 | ENCAPSULATION FILM, PACKAGE STRUCTURE UTILIZING THE SAME, AND METHOD FOR FORMING THE PACKAGE STRUCTURE - Disclosed is an encapsulation film. An inorganic oxide film is formed on an organic sealing layer by an atomic layer deposition (ALD) to form the encapsulation film, wherein the organic sealing layer is a polymer containing hydrophilic groups. The organic sealing layer and the inorganic oxide layer have covalent bondings therebetween. The encapsulation film can solve the moisture absorption problem of conventional organic sealing layers, thereby being suitable for use as a package of optoelectronic devices. | 02-09-2012 |
20120070590 | PLASMA ENHANCED ATOMIC LAYER DEPOSITION APPARATUS AND THE CONTROLLING METHOD THEREOF - This prevent disclosure provides a plasma enhanced atomic layer deposition apparatus and the controlling method thereof. The plasma enhanced atomic layer deposition apparatus includes: a plurality of reaction chambers, each of the reaction chambers having a first reaction space and a second reaction space; an adjustable partition unit controlled to separate or communicate the first and the second reaction spaces; and a plurality of heating carriers respectively disposed in the plurality of reaction chambers. The method manipulates the movement of the partition plate, leading to separation or communication between the first and second reaction spaces, so as to avoid the interference or inter-reaction between process gases and the resultant particles contaminating the substrates. | 03-22-2012 |
20120145078 | SHOWERHEAD INTEGRATING INTAKE AND EXHAUST - A showerhead integrating intake and exhaust is provided for showering a gas. The showerhead at least includes a showerhead body that has a gas-active surface and a plurality of intake bores thereon. The showerhead body further includes a central exhaust vent disposed on the gas-active surface. The central exhaust vent may exhaust standing gas and further pre-exhaust byproduct from reaction process. | 06-14-2012 |
20120235121 | ORGANIC LIGHT EMITTING DEVICE AND METHOD FOR FORMING THE SAME - According to an embodiment of the disclosure, an organic light emitting device is provided, which includes: an inflexible tube comprising an external surface and an internal surface; a transparent conductive layer on the internal surface of the inflexible tube; an organic light emitting layer disposed in the inflexible tube and on the transparent conductive layer; and a conductive layer disposed in the inflexible tube and on the organic light emitting layer. According to an embodiment of the disclosure, a method for forming an organic light emitting device is also provided. | 09-20-2012 |
20120313113 | PHOTOVOLTAIC ORGANIC LIGHT EMITTING DIODES DEVICE AND MANUFACTURING METHOD THEREOF - A photovoltaic organic light emitting diodes (PV-OLED) device and manufacturing method thereof are introduced. The PV-OLED device includes a substrate, a solar cell module, and a plurality of organic light emitting diodes. The solar cell module is disposed on a surface of the substrate. The organic light emitting diodes are disposed on the same surface of the substrate that the solar cell module is disposed on. The organic light emitting diode is electrically isolated from the solar cell module. The solar cell module can apply power to the organic light emitting diodes for emitting light. | 12-13-2012 |
20130068160 | EVAPORATION DEVICE AND EVAPORATION APPARATUS - An evaporation device and an evaporation apparatus applying the same are adapted to performing evaporation process to an object to be coated. The evaporation device includes a tape carrier and a mask. The tape carrier has a heating region. The object to be coated is located over the heating region and is adapted to move along a feeding direction. The tape carrier is adapted to carry a coating material to pass through the heating region. The coating material is heated in the heating region and evaporated. The mask having an opening between the heating region and the object to be coated is disposed in the periphery of the heating region. The evaporated coating material is adapted to pass through the opening and coated on the object. | 03-21-2013 |
20130095658 | METAL ORGANIC CHEMICAL VAPOR DEPOSITION METHOD AND APPARATUS - A metal organic chemical vapor deposition (MOCVD) method and apparatus are provided. The MOCVD method includes: providing a substrate, in which a metal-based material layer is disposed on a first surface of the substrate; putting the substrate on a base in a chamber, in which the metal-based material layer is between the substrate and the base; and performing a MOCVD process on a second surface opposite to the first surface. The difference in thermal conductivity between the metal-based material layer and the substrate is in the range of 1 W/m° C. to 20 W/m° C., and the thermal expansion coefficients of the metal-based material layer and the substrate are of the same order. | 04-18-2013 |
20130119343 | RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING THE SAME - A resistive random access memory and a method for fabricating the same are provided. The method includes forming a bottom electrode on a substrate; forming a metal oxide layer on the bottom electrode; forming an oxygen atom gettering layer on the metal oxide layer; forming a first top electrode sub-layer on the oxygen atom gettering layer; forming a second top electrode sub-layer on the first top electrode sub-layer, wherein the first top electrode sub-layer and the second top electrode sub-layer comprise a top electrode; and subjecting the metal oxide layer and the oxygen atom gettering layer to a thermal treatment, driving the oxygen atoms of the metal oxide layer to migrate into and react with the oxygen atom gettering layer, resulting in a plurality of oxygen vacancies within the metal oxide layer. | 05-16-2013 |
20130188339 | MIRROR DEVICE WITH ILLUMINATION AND MIRROR BOX USING THE SAME - The present disclosure provides a mirror device with illumination comprising a transparent conductive substrate, an isolation layer, a mirror layer and a light emitting diode (LED) layer. The isolation layer, formed on a surface of the transparent conductive substrate, divides the surface of the transparent conductive substrate into at least one first region and at least one second region. The mirror layer formed on the transparent conductive substrate within the at least one first region, while the LED layer is formed on the transparent conductive substrate within the at least one second region, wherein the mirror layer and the LED layer are electrically isolated from each other. In another embodiment, the present disclosure further provides a mirror box having the mirror device with illumination disposed therein so that the mirror device can be easily carried and kept in the pocket, or purse of user. | 07-25-2013 |
20140123900 | GAS SHOWER DEVICE HAVING GAS CURTAIN AND APPARATUS FOR DEPOSITING FILM USING THE SAME - A gas shower device having gas curtain comprises a first gas shower unit for injecting a reaction gas, thereby forming a reaction gas region, and a second gas shower unit. The second gas shower unit arranged around a periphery of the first gas shower unit comprises a buffer gas chamber for providing a buffer gas, and a curtain distribution plate. The curtain distribution plate further comprises a plurality through holes for injecting the buffer gas, thereby forming a gas curtain around a periphery of the reaction gas region. In another embodiment, an apparatus for depositing film is provided by utilizing the gas shower device having gas curtain, wherein the gas curtain prevents the reaction gas in the reaction gas region from being affected directly by a vacuum pressure so that a residence time of reaction gas can be extended thereby increasing the utilization of reaction gas and film-forming efficiency. | 05-08-2014 |
20150044851 | RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING THE SAME - A resistive random access memory and a method for fabricating the same are provided. The method includes forming a bottom electrode on a substrate; forming a metal oxide layer on the bottom electrode; forming an oxygen atom gettering layer on the metal oxide layer; forming a first top electrode sub-layer on the oxygen atom gettering layer; forming a second top electrode sub-layer on the first top electrode sub-layer, wherein the first top electrode sub-layer and the second top electrode sub-layer comprise a top electrode; and subjecting the metal oxide layer and the oxygen atom gettering layer to a thermal treatment, driving the oxygen atoms of the metal oxide layer to migrate into and react with the oxygen atom gettering layer, resulting in a plurality of oxygen vacancies within the metal oxide layer. | 02-12-2015 |
20150280122 | RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR FABRICATING THE SAME - A resistive random access memory and a method for fabricating the same are provided. The method includes providing a structure comprising a substrate, a bottom electrode disposed on the substrate, a metal oxide layer disposed on the bottom electrode, and an oxygen atom gettering layer disposed on the metal oxide layer; and subjecting the structure to a thermal treatment, driving the oxygen atoms of the metal oxide layer to migrate into and react with the oxygen atom gettering layer, resulting in a plurality of oxygen vacancies within the metal oxide layer. | 10-01-2015 |
Patent application number | Description | Published |
20090204630 | DIGITAL VIDEO APPARATUS AND RELATED METHOD FOR GENERATING INDEX INFORMATION - A digital video apparatus includes a media receiver, a first storage device, and an index information generating module. The media receiver is used for receiving a media stream. The first storage device is coupled to the media receiver for storing the media stream received by the media receiver. The index information generating module is coupled to the media receiver for sequentially indexing the media stream to generate index information. | 08-13-2009 |
20100048844 | THIOCARBONYLTHIO COMPOUND AND FREE RADICAL POLYMERIZATION EMPLOYING THE SAME - A thiocarbonylthio compound and free radical polymerization employing the same. The thiocarbonylthio compound is represented by formula (I) or (II): | 02-25-2010 |
20100193727 | FUNCTIONALIZED NANO-CARBON MATERIALS AND METHOD FOR FUNCTIONALIZING NANO-CARBON MATERIALS THEREOF - A method of functionalizing nano-carbon materials with a diameter less than 1 μm, comprising: contacting the nano-carbon materials with a free radical generating compound such as azo-compound in an organic solvent under an inert gas atmosphere, thereby obtaining nano-carbon materials with functional groups thereon. The physical and chemical properties of the nano-carbon materials can be modified through the aforementioned method. | 08-05-2010 |
20120172267 | LUBRICATING OIL COMPOSITION AND METHOD FOR MANUFACTURING THE SAME - The disclosure provides a lubricating oil composition and method for manufacturing the same. The lubricating oil composition substantially consists of a base lubricant oil, and an organic-inorganic composite particle uniformly dispersed in the base lubricant oil. This lubricating oil composition is applicable to a sliding section or sliding member of an automotive internal combustion engine or power transmission apparatus to significantly reduce friction coefficient, temperature of oil and wear rate. | 07-05-2012 |
20130155578 | CAPACITOR AND MANUFACTURING METHOD THEREOF - A capacitor and a manufacturing method thereof are provided. Two electrodes are disposed opposite to each other. Two electrode protection layers are respectively disposed on inner sides of the electrodes and include carbon particles each covered and bonded with a polymer shell. Active carbon layers are disposed on opposite inner sides of the electrode protection layers. The separator is disposed between the active carbon layers. The electrolyte fills between the electrode protection layers. The polymer shells of each electrode protection layer are bonded to the surface of the corresponding electrode by first and second functional groups. The first functional groups include thiol groups. The second functional groups include epoxy groups or carboxylic groups. The electrode protection layers serve as adhesion layers between the active carbon layers and the electrodes, and protect the electrodes from being corroded by the acid electrolyte solution. | 06-20-2013 |
20130157041 | SELF-ASSEMBLY COATING MATERIAL, HEAT SINK AND METHOD OF FORMING HEAT SINK - A self-assembly coating material including carbon particles and polymer shells is provided. The polymer shells respectively cover and are bonded to the carbon particles, wherein each polymer shell has both a first functional group for adsorbing on a surface of a substrate and a second functional group for self cross-linking. The first functional groups include thiol groups. The second functional groups include epoxy groups or carboxylic groups. The self-assembly coating material can be applied to a metal substrate to form a heat dissipation layer. | 06-20-2013 |