Mcswiney
Diarmuid Mcswiney, Ballincollig IE
Patent application number | Description | Published |
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20100048239 | COMMUNICATION DEVICE, INTEGRATED CIRCUIT AND METHOD THEREFOR - A communication device is capable of supporting communication compliant with a Dual-Mode 2.5G and 3G interface baseband-radio frequency interface standard and comprises a data interface operably coupled to a number sub-systems and a clock circuit generating a plurality of clock phases for supporting communication there between. At least one of the number of sub-systems comprises a line driver and a line receiver; wherein the communication device is characterised in that the line receiver determines an end of a received data frame sent across the data interface and in response thereto switches itself off. | 02-25-2010 |
20100111154 | ELECTRONIC DEVICE, INTEGRATED CIRCUIT AND METHOD THEREFOR - A wireless communication device comprises a number of sub-systems and clock generation logic arranged to generate at least one clock signal to be applied to the number of sub-systems. One of the number of sub-systems comprises sampling logic for receiving input data and performing initial sampling on an input data bit using multiple separated phases of a clock period of the at least one clock signal applied to the sampling logic thereby producing multiple phase separated sampled outputs of the input data bit. The sampling logic is configured to perform a number of re-sampling operations on the multiple phase separated sampled outputs at a number of intermediate phases thereby producing multiple phase separated intermediate sampled outputs prior to performing a final sample of the multiple phase separated intermediate sampled outputs at a single phase of the at least one clock signal to produce a sampled input data signal. | 05-06-2010 |
20110142169 | ELECTRONIC DEVICE, INTEGRATED CIRCUIT AND METHOD FOR SELECTING OF AN OPTIMAL SAMPLING CLOCK PHASE - An electronic device comprises a number of sub-systems coupled via an interface. One of the number of sub-systems comprises logic for receiving a frame of input data having a plurality of phases on respective data paths. The electronic device further comprises logic for performing cross correlation on the received input data with a pre-determined bit pattern, operably coupled to selection logic, for selecting a single phase from the plurality of phases sent to the interface to sample the received input data in a middle region of a data bit period in response to the cross correlation. | 06-16-2011 |
Jacqueline Mcswiney, New York, NY US
Patent application number | Description | Published |
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20090032546 | PILL BOTTLE INCLUDING AN INTERNAL SLEEVE AND AN EXTERNAL SLEEVE - Systems and methods for providing a pill bottle including an internal and external sleeve are provided. A pill bottle according to the invention may include an external sleeve and an internal sleeve. The internal sleeve preferably includes a cavity for holding pills. The external sleeve is slidably coupled to the internal sleeve. The external sleeve may include a groove and the internal sleeve may include a projection that may slide within the groove. The groove may prevent substantial rotation of the external sleeve with respect to the internal sleeve by preventing a substantial rotational of the projection with respect to the groove. | 02-05-2009 |
20090032547 | THREE BUTTON ACTUATED PILL HOLDER/DISPENSER - Systems and methods for providing a three button actuated pill holder/dispenser are provided. Such a pill holder/dispenser may include a housing comprising a plurality of apertures, a top button and two side buttons. In response to actuation of the top button, a pill may be dispensed from the pill holder/dispenser. Preferably, the two side buttons, which may project through the apertures, lock the top button, such that the top button may only be actuated when the two side buttons are depressed. Alternatively, some other sequence of the buttons may be implemented to cause a pill to be actuated. Additionally, the pill holder/dispenser may be packaged in a sealable package. | 02-05-2009 |
Michael L. Mcswiney, Scappoose, OR US
Patent application number | Description | Published |
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20080242059 | Methods of forming nickel silicide layers with low carbon content - A method for forming a nickel silicide layer on a MOS device with a low carbon content comprises providing a substrate within an ALD reactor and performing an ALD process cycle to form a nickel layer on the substrate, wherein the ALD process cycle comprises pulsing a nickel precursor into the reactor, purging the reactor after the nickel precursor, pulsing a mixture of hydrogen and silane into the reactor, and purging the reactor after the hydrogen and silane pulse. The ALD process cycle can be repeated until the nickel layer reaches a desired thickness. The silane used in the ALD process functions as a getterer for the advantageous carbon, resulting in a nickel layer that has a low carbon content. The nickel layer may then be annealed to form a nickel silicide layer with a low carbon content. | 10-02-2008 |
20090087623 | METHODS FOR THE DEPOSITION OF TERNARY OXIDE GATE DIELECTRICS AND STRUCTURES FORMED THEREBY - Methods and associated structures of forming a microelectronic device are described. Those methods may include introducing a first metal source, a second metal source and an oxygen source into a chamber and then forming a ternary oxide film comprising a first percentage of the first metal, a second percentage of the second metal, and a third percentage of oxygen. | 04-02-2009 |
20090096025 | Method for manufacturing a silicon-on-insulator (SOI) wafer with an etch stop layer - Embodiments of a silicon-on-insulator (SOI) wafer having an etch stop layer overlying the buried oxide layer, as well as embodiments of a method of making the same, are disclosed. The etch stop layer may comprise silicon nitride, nitrogen-doped silicon dioxide, or silicon oxynitride, as well as some combination of these materials. Other embodiments are described and claimed. | 04-16-2009 |
20120091542 | METHODS FOR THE DEPOSITION OF TERNARY OXIDE GATE DIELECTRICS AND STRUCTURES FORMED THEREBY - Methods and associated structures of forming a microelectronic device are described. Those methods may include introducing a first metal source, a second metal source and an oxygen source into a chamber and then forming a ternary oxide film comprising a first percentage of the first metal, a second percentage of the second metal, and a third percentage of oxygen. | 04-19-2012 |
20130299767 | DEPOSITING TITANIUM SILICON NITRIDE FILMS FOR FORMING PHASE CHANGE MEMORIES - Organometallic precursors may be utilized to form titanium silicon nitride films that act as heaters for phase change memories. By using a combination of TDMAT and TrDMASi, for example in a metal organic chemical vapor deposition chamber, a relatively high percentage of silicon may be achieved in reasonable deposition times, in some embodiments. In one embodiment, two separate bubblers may be utilized to feed the two organometallic compounds in gaseous form to the deposition chamber so that the relative proportions of the precursors can be readily controlled. | 11-14-2013 |