Patent application number | Description | Published |
20100046151 | PORTABLE ELECTRONIC DEVICE - A portable electronic device includes a casing, a key, a loudspeaker, a soft insulating material, and an actuating unit. The key is disposed at the casing. The loudspeaker is embedded into the casing flatly. The soft insulating material covers the casing and the loudspeaker. The actuating unit is coupled to the key and the loudspeaker, and it actuates the loudspeaker to protrude from the casing in response to an actuation of the key. | 02-25-2010 |
20100046162 | CASING, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE HAVING THE SAME - A casing includes a main body and a covering layer. The main body has a first transparent area and a second transparent area disposed as mirror images. Light passes through the first transparent area and the second transparent area. The covering layer covers the second transparent area and has a transmittance gradient. A method for manufacturing the casing and an electronic device having the casing are also disclosed. | 02-25-2010 |
20100046163 | PORTABLE ELECTRONIC DEVICE - A portable electronic device includes a casing, a covering layer, and a key. The casing has an opening. The covering layer covers at least one portion of the casing and covers the opening. The key is disposed at the opening and at least one portion of the key is embedded into the opening of the casing to allow one portion of the covering layer to be sandwiched between the key and the casing. | 02-25-2010 |
20100051430 | PORTABLE ELECTRONIC DEVICE AND BUTTON ASSEMBLY THEREOF - A button assembly is applied to a portable electronic device having a casing. The casing has an opening. The button assembly includes a button and a circuit board. The button is disposed at the opening and has a button body and a cloth-material layer. The cloth-material layer covers at least one portion of the button body and is exposed to a surface of the casing. The circuit board is disposed in the casing. The circuit board has a switch corresponding to the button body. A portable electronic device having the button assembly is also disclosed. | 03-04-2010 |
20100063758 | ELECTRONIC APPARATUS WITH POWER INDICATION FUNCTION - An electronic apparatus with a power indication function is connected to an adapter. The electronic apparatus includes a host, a power jack, a rechargeable battery, a power indication element and a controller. The power jack is disposed on the host for connecting with the adapter. The rechargeable battery is disposed in the host and is electrically connected to the power jack. The power indication element has a switch disposed adjacent to the power jack and a power indicator disposed in the host. The controller is electrically connected to the rechargeable battery, the switch and the power indicator. When the switch turns on, the controller detects the remained power in the rechargeable battery and the remained power is indicated by the power indicator. | 03-11-2010 |
20100067201 | FLIP ELECTRONIC DEVICE - A flip electronic device includes a cover, a display module, a casing, a circuit board, and an electrical connection element. The casing is pivotally connected with the cover. The cover has a light-transparent portion. The display module is disposed at the cover. The circuit board is disposed in the casing. The electrical connection element is electrically connected with the display module and the circuit board. At least one portion of the electrical connection element is viewable through the light-transparent portion. | 03-18-2010 |
Patent application number | Description | Published |
20140191358 | Two-Portion Shallow-Trench Isolation - A shallow trench isolation (STI) and method of forming the same is provided. The STI structure comprises an upper insulating portion and a lower insulating portion, wherein the lower insulating portion includes a first insulator and an insulating layer surrounding the first insulator, the upper insulating portion includes a second insulator and a buffer layer surrounding the second insulator. A part of the buffer layer interfaces between the first insulator and the second insulator, and the outer sidewall of the buffer layer and the sidewall of the first insulator are leveled. | 07-10-2014 |
20140322891 | METHOD OF FORMING SHALLOW TRENCH ISOLATIONS - A method of forming shallow trench isolation structures including the steps of forming a trench in a substrate, filling a first insulating layer in the lower portion of the trench and defining a recess at the upper portion of the trench, forming a buffer layer on the sidewall of the recess, filling a second insulating layer in the recess, and performing a steam annealing process to transform the substrate surrounding the first insulating layer into an oxide layer. | 10-30-2014 |
20140332920 | SHALLOW TRENCH ISOLATION - A shallow trench isolation (STI) and method of forming the same is provided. The STI structure includes an upper insulating portion and a lower insulating portion, where the lower insulating portion includes a first insulator and an insulating layer surrounding the first insulator, the upper insulating portion includes a second insulator and a buffer layer surrounding the second insulator. Apart of the buffer layer interfaces between the first insulator and the second insulator, and the outer sidewall of the buffer layer and the sidewall of the first insulator are leveled. | 11-13-2014 |
20150097248 | SHALLOW TRENCH ISOLATION - The semiconductor structure includes a plurality of first insulators in a substrate, a common insulating layer surrounding the sidewall and the bottom of said first insulators in said substrate, and suspended portions of said substrate on said common insulating layer. | 04-09-2015 |
20150118835 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes following steps. A substrate having at least a transistor embedded in an insulating material formed thereon is provided. The transistor includes a metal gate. Next, an etching process is performed to remove a portion of the metal gate to form a recess and to remove a portion of the insulating material to form a tapered part. After forming the recess and the tapered part of the insulating material, a hard mask layer is formed on the substrate to fill up the recess. Subsequently, the hard mask layer is planarized. | 04-30-2015 |
20150118836 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device is disclosed. Provided is a substrate having a dummy gate formed thereon, a spacer on a sidewall of the dummy gate and a first dielectric layer surrounding the spacer. The dummy gate is removed to form a gate trench. A gate dielectric layer and at least one work function layer is formed in the gate trench. The work function layer and the gate dielectric layer are pulled down, and a portion of the spacer is laterally removed at the same time to widen a top portion of the gate trench. A low-resistivity metal layer is formed in a bottom portion of the gate trench. A hard mask layer is formed in the widened top portion of the gate trench. | 04-30-2015 |
20150145027 | METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device is provided according to one embodiment of the present invention and includes forming an interlayer dielectric on a substrate; forming a trench surrounded by the interlayer dielectric; depositing a dielectric layer and a work function layer on a surface of the trench sequentially and conformally; filling up the trench with a conductive layer; removing an upper portion of the conductive layer inside the trench; forming a protection film on a top surface of the interlayer dielectric and a top surface of the conductive layer through a directional deposition process; removing the dielectric layer exposed from the protection film; and forming a hard mask to cover the protection film. | 05-28-2015 |
20150243663 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND DEVICE MANUFACTURED USING THE SAME - A method for manufacturing a semiconductor device and a device manufactured using the same are provided. According to a dual silicide approach of the embodiment, a substrate having a first area with plural first metal gates and a second area with plural second metal gates is provided, wherein the adjacent first metal gates and the adjacent second metal gates are separated by an insulation. A dielectric layer is formed on the first and second metal gates and the insulation. The dielectric layer and the insulation at the first area are patterned by a first mask to form a plurality of first openings. Then, a first silicide is formed at the first openings. The dielectric layer and the insulation at the second area are patterned by a second mask to form a plurality of second openings. Then, a second silicide is formed at the second openings. | 08-27-2015 |