Patent application number | Description | Published |
20150015813 | BLACK RESIN FILM, CAPACITANCE TYPE INPUT DEVICE, METHOD FOR PRODUCING THEM, AND IMAGE DISPLAY APPARATUS USING THE SAME - A black resin film is produced by applying a photosensitive resin composition containing a black pigment, an alkali-soluble polymer compound, an ethylenic unsaturated bond-containing compound and α-aminoalkylphenone or α-hydroxyalkylphenone as a photopolymerization initiator, to a substrate; and subjecting the composition to exposure, development and post-exposure. The post-exposure is performed from both side with 1,300 mJ/cm | 01-15-2015 |
20160039188 | TRANSFER MATERIAL, SUBSTRATE WITH TRANSFER LAYER, TOUCH PANEL, MANUFACTURING METHODS THEREFOR, AND INFORMATION DISPLAY DEVICE - The transfer material includes a temporary support, a release layer, a transfer layer, and a protective film in this order. When the protective film is peeled off from the transfer material, the protective film is peeled off from the transfer layer, and the transfer layer remains on the release layer side. In addition, when the temporary support is peeled off after the transfer layer is transferred to a transfer target substrate which is formed of glass or a film selected from TAC, PET, PC, or COP, the release layer is present on the peeled temporary support side. | 02-11-2016 |
Patent application number | Description | Published |
20120046832 | VEHICLE STEERING SYSTEM - A current increase-decrease amount (ΔI | 02-23-2012 |
20130311044 | ELECTRIC POWER STEERING APPARATUS - An assisting command value calculating unit calculates a first assisting factor on the basis of the value of a torque differential control volume added to a basic assist control volume based on a steering torque value, while increasing or decreasing, on the basis of an assisting gradient, the torque differential control volume based on a torque differential value. The pinion angle F/B control unit calculates a pinion angle command value, capable of being converted to a steering angle of the steering wheel, on the basis of the steering torque and the first assisting factor, and executes rotational angle feedback control. The assisting command value calculating unit calculates an assisting command value on the basis of the value of a second assisting factor, calculated by the pinion angle F/B control unit, added to the first assisting factor. | 11-21-2013 |
20140058629 | ELECTRIC POWER STEERING SYSTEM - An electric power steering system includes a motor control device that controls, based on an assist command value, driving of a motor that gives an assist torque to a steering mechanism. The motor control device computes a first assist component based on a steering torque and a vehicle speed. A steered-angle command value is computed based on the steering torque and the first assist component, and a second assist component is computed by performing a feedback control that matches the steered angle with the steered-angle command value. The motor control device adds the second assist component to the first assist component so as to compute an assist command value. The motor control device includes a road information compensation portion that decreases an absolute value of the second assist component included in the assist command value when a skid is detected by a vehicle state detecting portion. | 02-27-2014 |
20140081524 | ELECTRIC POWER STEERING SYSTEM - A target pinion angle computation unit computes a target pinion angle on the basis of a basic assist component and a steering torque, and computes the target pinion angle so as to rapidly increase a steering reaction force when it is determined based on the target pinion angle that a rack shaft of a rack-and-pinion mechanism reaches a position near a limit of a movable range of the rack shaft. In an. EPS, a correction component for the basic assist component, which is necessary to increase the steering reaction force rapidly, is computed through execution of PID control for causing an actual pinion angle to coincide with the target pinion angle. Because the correction component is added to the basic assist component, the steering reaction force is increased rapidly when the rack shaft reaches the position near the limit of the movable range. | 03-20-2014 |
20140238768 | ELECTRIC POWER STEERING APPARATUS - An end determination unit determines that a steering apparatus is in an end touching state when an angle deviation, which is a difference between an actual turning angle and a target turning angle, exceeds a threshold. This angle deviation exceeds the threshold before a large axial force is generated in a steering shaft. Accordingly, is it possible to determine that the steering apparatus is in the end touching state more quickly. | 08-28-2014 |
20140238769 | ELECTRIC POWER STEERING APPARATUS - A zero point change model executes banked road correspondence control when a vehicle travels on a banked road. By this control, a target turning angle when the total torque is zero can be changed from a neutral turning angle to a lower side of an inclined road surface. Thus, a steering angle of a steering wheel according to a banked road can be realized even if the driver does not apply steering torque during traveling on a banked road. Accordingly, the driver can obtain a suitable steering feeling when traveling on a banked road while achieving the target turning angle according to the total torque. | 08-28-2014 |
20140238770 | ELECTRIC POWER STEERING APPARATUS - An electric power steering apparatus includes a controller that controls, based on an assist command value, driving of a motor used to apply assist torque to a steering mechanism. The controller calculates a first assist component based on a steering torque transmitted to the steering mechanism and calculates a steered angle command value based on the steering torque. The controller executes feedback control to cause a steered angle of steerable wheels to agree with the steered angle command value, thereby calculating a second assist component. The controller calculates the assist command value based on a value obtained by adding the assist components. The controller estimates a grip factor of the wheels on a road surface on which the wheels are traveling based on the steering torque, a first assist torque determined based on the first assist component, and a second assist torque determined based on the second assist component. | 08-28-2014 |
20140343794 | ELECTRIC POWER STEERING SYSTEM - There is provided an electric power steering system that makes it possible to improve the driver's steering feel, and that includes a controller that controls driving of a motor. The controller computes a first assist component based on a steering torque. The controller computes a torque command value based on a basic drive torque that is the sum of the steering torque and the first assist component, and computes an assist compensation component through feedback control based on the torque command value. The controller computes a steered angle command value based on a value obtained by adding the assist compensation component to the basic drive torque, and computes a second assist component through feedback control based on the steered angle command value. The controller controls driving of the motor based on an assist command value that is the sum of the first assist component and the second assist component. | 11-20-2014 |
20150057889 | VEHICLE POWER STEERING SYSTEM - In the vehicle power steering system, a first assist torque component is computed based on a steering torque and a vehicle speed. A target steered angle is computed based on the first assist torque component and the steering torque, and a second assist torque component is set based on the target steered angle and an actual steered angle. Then, the vehicle power steering system assists a steering operation by applying an assist torque Tas corresponding to the first assist torque component and the second assist torque component. Further, an ideal steered angle at which a vehicle is able to keep travelling in a lane is set based on image information on the lane captured by a camera, and a correction value is computed based on the deviation between the ideal steered angle and the actual steered angle. Then, the target steered angle is corrected by the correction value. | 02-26-2015 |
20150057890 | ELECTRIC POWER STEERING SYSTEM - In an electric power steering system, a vehicle reactive force model computes a correction spring reactive torque in such a manner that an elasticity component included in a steering reactive force is increased with an increase in a lateral acceleration. As the lateral acceleration increases, an increase in a basic drive torque is suppressed by a larger amount. By an amount by which the magnitude of the basic drive torque is suppressed, a target pinion angle computed by a target pinion angle computing unit decreases and a correction component for a basic assist component is decreased. A steering assist force is decreased, and a steering reactive force is increased with a decrease in the steering assist force. Thus, it is possible to obtain an appropriate steering reactive force based on the magnitude of the lateral acceleration. | 02-26-2015 |
20150057892 | ELECTRIC POWER STEERING SYSTEM - A controller of an electric power steering system includes: a basic assist component computing unit ( | 02-26-2015 |
20150251691 | ELECTRIC POWER STEERING DEVICE - A control device in an electric power steering device calculates a first assist component based on steering torque and a vehicle speed. The control device also calculates a compensation component associated with an reverse input and calculates a steered angle command value based on an addition value of the compensation component and basic drive torque that is an addition value of the steering torque and the first assist component, produces a second assist component by performing steered angle feedback control that causes the steered angle of a vehicle to follow the steered angle command value. The control device controls drive of a motor based on an assist command value that is an addition value of the first assist component and the second assist component. | 09-10-2015 |
Patent application number | Description | Published |
20100175716 | Cleaning Member, Delivery Member with Cleaning Function, and Method of Cleaning Substrate Processing Apparatus - Provided is a cleaning member, which is capable of removing minute foreign matter, preferably foreign matter of a submicron level simply, exactly, and sufficiently, without contaminating a cleaning site. Further provided is a delivery member with a cleaning function having the cleaning member and a method of cleaning a substrate processing apparatus using the delivery member with a cleaning function. The cleaning member of the present invention includes a cleaning layer having a plurality of protrusions of a columnar structure on the surface, in which an aspect ratio of the protrusions of a columnar structure is 5 or more. | 07-15-2010 |
20100319151 | CLEANING SHEET, CONVEYING MEMBER USING THE SAME, AND SUBSTRATE PROCESSING EQUIPMENT CLEANING METHOD USING THEM - A cleaning sheet for cleaning foreign matters away from the interior of the substrate processing equipment is provided. The cleaning sheet includes a cleaning layer having substantially no tackiness and having a tensile modulus of not lower than 0.98 N/mm | 12-23-2010 |
20110229675 | LABEL SHEET FOR CLEANING AND CONVEYING MEMBER HAVING CLEANING FUNCTION - A label sheet for cleaning is formed of a label for cleaning including a cleaning layer having a 180° peeling adhesion to a silicon wafer of 0.20 N/10 mm or less after receiving an active energy and an adhesive layer provided on one of surfaces of said cleaning layer, and a separator on which the label is removably provided through the adhesive layer. | 09-22-2011 |
20110229697 | LABEL SHEET FOR CLEANING AND CONVEYING MEMBER HAVING CLEANING FUNCTION - A label sheet for cleaning is formed of a label for cleaning including a cleaning layer having a 180° peeling adhesion to a silicon wafer of 0.20 N/10 mm or less after receiving an active energy and an adhesive layer provided on one of surfaces of said cleaning layer, and a separator on which the label is removably provided through the adhesive layer. | 09-22-2011 |
Patent application number | Description | Published |
20090253891 | CLEANING SUBSTRATE OF SUBSTRATE PROCESSING EQUIPMENT AND HEAT RESISTANT RESIN PREFERABLE THEREOF - The present invention provides a cleaning substrate of a substrate processing equipment, which comprises a cleaning layer comprising a heat resistant resin with a storage modulus (1 Hz) at 20° C. up to 150° C. being 5×10 | 10-08-2009 |
20120160405 | METHOD FOR PRODUCING ORGANIC EL DEVICE AND SUBSTRATE FOR PRODUCING ORGANIC EL DEVICE - A method for producing an organic EL device includes the steps of: preparing an adhesive sheet on which a resin substrate is laminated; allowing the resin substrate to adhere onto a hard substrate with the adhesive sheet interposed therebetween; forming an organic EL element on the resin substrate, thereby producing an organic EL device including the resin substrate and the organic EL element; and peeling the organic EL device from the hard substrate. The adhesive sheet includes a first adhesive layer for being bonded to the hard substrate, and a second adhesive layer formed on the first adhesive layer and bonded to the resin substrate. The adhesive strength of the first adhesive layer is different from the adhesive strength of the second adhesive layer. | 06-28-2012 |
20120177896 | METHOD FOR PRODUCING ORGANIC EL DEVICE AND SUBSTRATE FOR PRODUCING ORGANIC EL DEVICE - A method for producing an organic EL device includes the steps of: preparing an adhesive sheet on which a resin substrate is laminated, allowing the resin substrate to adhere onto a hard substrate with the adhesive sheet interposed therebetween, forming an organic EL element on the resin substrate, thereby producing an organic EL device including the resin substrate and the organic EL element, and peeling the organic EL device from the hard substrate. The adhesive sheet includes a first adhesive layer for being bonded to the hard substrate, and a second adhesive layer formed on the first adhesive layer and bonded to the resin substrate. A non-adhesive region is defined at an end portion of the resin substrate, the non-adhesive region not overlapping with the second adhesive layer but overlapping with the first adhesive layer when projected in the thickness direction. | 07-12-2012 |
20140090196 | CLEANING SHEET, CARRYING MEMBER WITH A CLEANING FUNCTION AND METHOD OF CLEANING SUBSTRATE PROCESSING EQUIPMENT - A cleaning sheet comprising a cleaning layer and a releasable protective film laminated on the cleaning layer, wherein each of the relative intensities of the fragment ions Of CH | 04-03-2014 |
20140090199 | CLEANING SHEET, CARRYING MEMBER WITH A CLEANING FUNCTION AND METHOD OF CLEANING SUBSTRATE PROCESSING EQUIPMENT - A cleaning sheet comprising a cleaning layer and a releasable protective film laminated on the cleaning layer, wherein each of the relative intensities of the fragment ions of CH | 04-03-2014 |
20140311525 | LABEL SHEET FOR CLEANING AND CONVEYING MEMBER HAVING CLEANING FUNCTION - A label sheet for cleaning is formed of a label for cleaning including a cleaning layer having a 180° peeling adhesion to a silicon wafer of 0.20 N/10 mm or less after receiving an active energy and an adhesive layer provided on one of surfaces of said cleaning layer, and a separator on which the label is removably provided through the adhesive layer. | 10-23-2014 |
20140311666 | LABEL SHEET FOR CLEANING AND CONVEYING MEMBER HAVING CLEANING FUNCTION - A label sheet for cleaning is formed of a label for cleaning including a cleaning layer having a 180° peeling adhesion to a silicon wafer of 0.20 N/10 mm or less after receiving an active energy and an adhesive layer provided on one of surfaces of said cleaning layer, and a separator on which the label is removably provided through the adhesive layer. | 10-23-2014 |
Patent application number | Description | Published |
20130327425 | POSITIONER - A positioner includes a shift magnitude calculating portion that calculates a shift magnitude from the equilibrium state of a pilot relay, from an input air pressure that is inputted into the pilot relay and an output air pressure that is outputted from the pilot relay. A control calculating portion determines a control signal from an actual opening signal, an opening setting value, and the shift magnitude from the equilibrium state of the pilot relay that is calculated by the shift magnitude calculating portion, and outputs it to the electropneumatic converter. | 12-12-2013 |
20130327426 | POSITIONER - A positioner includes a modeling portion that, having input/output characteristics that model an electropneumatic converter, inputs a control signal from a control calculating portion to calculate an estimated value for an input air pressure that is inputted from the electropneumatic converter into a pilot relay, and a shift magnitude calculating portion that calculates a shift magnitude from the equilibrium state of the pilot relay, from the estimated value for the input air pressure, which is calculated by the modeling portion, and the output air pressure that is outputted from the pilot relay. The control calculating portion determines the control signal from an actual opening signal, an opening setting signal, and the shift magnitude from the equilibrium state of the pilot relay, and outputs it to the electropneumatic converter. | 12-12-2013 |
Patent application number | Description | Published |
20090000558 | ANIMAL LITTER BOX - An animal litter box includes: an upper container, which having an upper opening for animals to come in and out, and a bottom portion, which allows fluid to pass through and over which particulate matter is spread; and a lower container having a lower opening provided below the bottom portion, and a holding portion for disposing a fluid absorbing sheet container in which the fluid absorbing sheet which absorbs fluid passing through the bottom portion is laid, wherein a fitting portion for fitting to an edge of a lower opening of the lower container is provided at a side or bottom of the upper container. The fitting portion is preferably a stepped portion or a concave portion. | 01-01-2009 |
20090000559 | ANIMAL LITTER BOX - An animal litter box includes an evacuation container and a hood, the hood having a fixed hood, a movable hood, and a pair of connecting portions. The movable hood is configured to be moved rotatably either outside or inside the fixed hood such that an end edge of the movable hood is proximal to the fixed hood while maintaining a prescribed distance at least one of the fixed hood | 01-01-2009 |
20110000435 | ANIMAL LITTER BOX - To provide a movable hood which can be opened and closed smoothly even though a distance between the movable hood and a fixed hood is reduced. An animal litter box | 01-06-2011 |
Patent application number | Description | Published |
20080236281 | Angular velocity sensor and angular velocity sensing device - An angular velocity sensor of a horizontally located type, in which influence of a translational acceleration applied thereto from a lateral direction is readily removed and a fixed portion thereof is easily fixed, is provided. It includes a fixed portion fixed to the top surface of a sensor element supporting portion of a casing, an upper detection arm portion and a lower detection arm portion respectively connected to the fixed portion on sides opposite to each other and extending along a plane parallel to the top surface of the sensor element supporting portion, and a pair of upper vibration arms connected to the fixed portion with the upper detection arm portion in between. The fixed portion includes one or more slits extending at least in a direction intersecting with the extending direction of the upper detection arm portion. | 10-02-2008 |
20090039739 | Angular velocity sensor and angular velocity sensing device - The present invention provides an angular velocity sensor in which higher sensitivity for sensors is available even with a smaller base portion. The angular velocity sensor includes a fixed portion fixed to the top surface of a sensor element supporting portion of a casing, an upper detection arm and a lower detection arm, each of them being connected to the fixed portion on sides opposite to each other and extending along a plane parallel to the top surface of the sensor element supporting portion, and a pair of upper vibration arms connected to the fixed portion in such a manner as to form a pair of arms with the upper detection arm in between and extending in a direction parallel to the extending direction of the upper detection arm. | 02-12-2009 |
20090165554 | Angular velocity sensor and angular velocity sensing device - Provided is a horizontally located sensitive angular velocity sensor capable of easily eliminating influence of acceleration in a lateral direction and whose fixed section is easily fixed. The angular velocity sensor includes a pair of fixed sections fixed on a top of an sensor support section of a case, a detection arm extending along a plane parallel to the sensor support section, and a pair of upper drive arm and lower drive arm extending along the plane parallel to the sensor support section and extending in a direction opposite to each other so as to intersect an extending direction of the detection arm. | 07-02-2009 |
20110042127 | ELECTRONIC COMPONENT AND MANUFACTURING METHOD THEREOF - The invention provides an electronic component and a manufacturing method thereof that: can allow electronic components to be mounted on an external substrate at a higher density than before; can adjust the height (level) of a terminal electrode as required and desired, thereby solving problems that would occur in the inspection of the conventional electronic components; and can also improve the yield in the mounting of electronic components, thereby achieving increased productivity. A capacitor | 02-24-2011 |
20110044011 | ELECTRONIC COMPONENT AND MANUFACTURING METHOD THEREOF - The invention provides an electronic component and a manufacturing method thereof that can achieve an improved adhesion strength when the electronic component is solder-mounted onto an external substrate and can thereby obtain considerably improved electric properties and reliabilities, etc. An electronic component, which is a capacitor | 02-24-2011 |
20130258544 | THIN FILM CAPACITOR - A thin film capacitor includes an under electrode, a plurality of dielectric body layers and a plurality of internal electrode layers that are alternately laminated on the under electrode, the internal electrode layers respectively including protrusion parts that each protrude from the dielectric body layers viewed in the lamination direction, and connection electrodes to which at least a portion of each of the protrusion parts contacts. Assuming that protrusion amounts of the protrusion parts of the internal electrode layers that are connected to the same connection electrode are regarded as L, a protrusion amount L | 10-03-2013 |
20130258545 | THIN FILM CAPACITOR - A thin film capacitor includes two or more of dielectric body layers that are alternately laminated on an under-electrode, and internal electrode layers that are laminated between the dielectric body layers, and are exposed off the dielectric body layer, and a connection electrode that is electrically connected to the internal electrode layers via the exposed portion of the internal electrode layers, A relationship between an average grain size D of crystal grains in the internal electrode layers and an average grain size d of crystal grains in the connection electrode is D>d. | 10-03-2013 |
20150325368 | THIN FILM CAPACITOR - A thin film capacitor comprises: a laminated body in which a dielectric layer and an upper electrode layer are successively laminated on a base electrode; a protective layer that covers a part of the base electrode, the dielectric layer and the upper electrode layer and includes a through-hole respectively on the base electrode and on the upper electrode layer; and terminal electrodes that are electrically connected with the base electrode and the upper electrode layer through the through-holes of the protective layer, and a modulus of longitudinal elasticity (Young's modulus) of the protective layer is 0.1 GPa to 2.0 GPa. | 11-12-2015 |
20160027579 | THIN FILM CAPACITOR - A thin film capacitor includes a pair of electrode layers, a dielectric layer existing between the pair of electrode layers, and a ceramic layer disposed on a surface opposite to the dielectric layer of at least one of the electrode layers. | 01-28-2016 |
20160111211 | THIN FILM CAPACITOR - A thin film capacitor comprising
| 04-21-2016 |
Patent application number | Description | Published |
20110165764 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A first silicon carbide substrate having a first back-side surface and a second silicon carbide substrate having a second back-side surface are prepared. The first and second silicon carbide substrates are placed so as to expose each of the first and second back-side surfaces in one direction. A connecting portion is formed to connect the first and second back-side surfaces to each other. The step of forming the connecting portion includes a step of forming a growth layer made of silicon carbide on each of the first and second back-side surfaces, using a sublimation method of supplying a sublimate thereto in the one direction. | 07-07-2011 |
20120003811 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A first silicon carbide substrate has a first front-side surface and a first side surface. A second silicon carbide substrate has a second front-side surface and a second side surface. The second side surface is disposed such that a gap having an opening between the first and second front-side surfaces of the first and second silicon carbide substrates is disposed between the first side surface and the second side surface. A closing portion is provided to close the gap over the opening. By depositing sublimates from the first and second side surfaces onto the closing portion, a connecting portion is formed to connect the first and second side surfaces to each other so as to close the opening. After the step of forming the connecting portion, the closing portion is removed. | 01-05-2012 |
20120003823 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A combined substrate is prepared which has a supporting portion and first and second silicon carbide substrates. The first silicon carbide substrate has a first front-side surface and a first side surface. The second silicon carbide substrate has a second front-side surface and a second side surface. The second side surface is disposed such that a gap having an opening between the first and second front-side surfaces is formed between the first side surface and the second side surface. By introducing melted silicon from the opening into the gap, a silicon connecting portion is formed to connect the first and second side surfaces so as to close the opening. By carbonizing the silicon connecting portion, a silicon carbide connecting portion is formed. | 01-05-2012 |
20120012862 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate made of silicon carbide and a SiC substrate made of single-crystal silicon carbide; and connecting the base substrate and SiC substrate to each other by forming an intermediate layer, which is made of carbon that is a conductor, between the base substrate and the SiC substrate. | 01-19-2012 |
20120015499 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A combined substrate is prepared which has a supporting portion and first and second silicon carbide substrates. Between the first and second silicon carbide substrates, a gap having an opening exists. A closing layer for the gap is formed over the opening. The closing layer at least includes a silicon layer. In order to form a cover made of silicon carbide and closing the gap over the opening, the silicon layer is carbonized. By depositing sublimates from the first and second side surfaces of the first and second silicon carbide substrates onto the cover, a connecting portion is formed to close the opening. The cover is removed. | 01-19-2012 |
20120017826 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A supporting portion ( | 01-26-2012 |
20120025208 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate made of silicon carbide and a SiC substrate made of single-crystal silicon carbide; forming a Si film made of silicon on a main surface of the base substrate; fabricating a stacked substrate by placing the SiC substrate on and in contact with the Si film; and connecting the base substrate and the SiC substrate to each other by heating the stacked substrate to convert, into silicon carbide, at least a region making contact with the base substrate and a region making contact with the SiC substrate in the Si film. | 02-02-2012 |
20120032191 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE - A method for manufacturing a silicon carbide substrate ( | 02-09-2012 |
20120061686 | SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE - A silicon carbide substrate allowing reduction in cost for manufacturing a semiconductor device including a silicon carbide substrate includes a base substrate composed of silicon carbide and an SiC layer composed of single crystal silicon carbide different from the base substrate and arranged on the base substrate in contact therewith. Thus, the silicon carbide substrate | 03-15-2012 |
20120061687 | SILICON CARBIDE SUBSTRATE AND SEMICONDUCTOR DEVICE - A silicon carbide substrate, which allows for reduced resistivity in the thickness direction thereof while restraining stacking faults from being produced due to heat treatment, includes: a base layer made of silicon carbide; and a SiC layer made of single-crystal silicon carbide and disposed on one main surface of the base layer. The base layer has an impurity concentration greater than 2×10 | 03-15-2012 |
20120068195 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a plurality of SiC substrates each made of single-crystal silicon carbide; forming a base layer made of silicon carbide and holding the plurality of SiC substrates, which are arranged side by side when viewed in a planar view; and forming a filling portion filling a gap between the plurality of SiC substrates. | 03-22-2012 |
Patent application number | Description | Published |
20110175107 | SILICON CARBIDE SUBSTRATE - A base portion is made of silicon carbide and has a main surface. At least one silicon carbide layer is provided on the main surface of the base portion in a manner exposing a region of the main surface along an outer edge of the main surface. At least one protection layer is provided on this region of the main surface of the base portion along the outer edge of the main surface. Thus, a silicon carbide substrate can be polished with high in-plane uniformity. | 07-21-2011 |
20110175108 | LIGHT-EMITTING DEVICE - A silicon carbide substrate has a first layer facing a semiconductor layer and a second layer stacked on the first layer. Dislocation density of the second layer is higher than dislocation density of the first layer. Thus, quantum efficiency and power efficiency of a light-emitting device can both be high. | 07-21-2011 |
20110198027 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A base portion and first and second silicon carbide substrates are disposed in a processing chamber such that a first side surface of a first silicon carbide substrate and a side surface of a second silicon carbide substrate face each other. The processing chamber has an inner surface at least a portion of which is covered with an absorbing portion including Ta atoms and C atoms. In order to connect the first and second side surfaces to each other, a temperature in the processing chamber is increased to reach or exceed a temperature at which silicon carbide can sublime. In the step of increasing the temperature, at least a portion of the absorbing portion is carbonized. | 08-18-2011 |
20110233561 | SEMICONDUCTOR SUBSTRATE - A supporting portion is made of silicon carbide. At least one layer has first and second surfaces. The first surface is supported by the supporting portion. The at least one layer has first and second regions. The first region is made of silicon carbide of a single-crystal structure. The second region is made of graphite. The second surface has a surface formed by the first region. The first surface has a surface formed by the first region, and a surface formed by the second region. In this way, a semiconductor substrate can be provided which has a region made of silicon carbide having a single-crystal structure and a supporting portion made of silicon carbide and allows for reduced electric resistance of an interface therebetween. | 09-29-2011 |
20110278593 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a SiC substrate made of single-crystal silicon carbide; disposing a base substrate in a crucible so as to face a main surface of the SiC substrate; and forming a base layer made of silicon carbide in contact with the main surface of the SiC substrate, by heating the base substrate in the crucible to fall within a range of temperature higher than a sublimation temperature of silicon carbide constituting the base substrate. In the step of forming the base layer, a gas containing silicon is introduced into the crucible. | 11-17-2011 |
20110278594 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a SiC substrate made of single-crystal silicon carbide; disposing a base substrate in a crucible so as to face a main surface of the SiC substrate; and forming a base layer made of silicon carbide in contact with the main surface of the SiC substrate by heating the base substrate in the crucible to fall within a range of temperature equal to or higher than a sublimation temperature of silicon carbide constituting the base substrate. The crucible has an inner wall at least a portion of which is provided with a coating layer made of silicon carbide. | 11-17-2011 |
20110278595 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate made of silicon carbide and a SiC substrate made of single-crystal silicon carbide; fabricating a stacked substrate by placing said SiC substrate on and in contact with a main surface of said base substrate; and connecting said base substrate and said SiC substrate to each other by heating said stacked substrate in a container to fall within a range of temperature equal to or greater than a sublimation temperature of silicon carbide constituting said base substrate. In the step of connecting said base substrate and said SiC substrate, a silicon carbide body made of silicon carbide and different from said base substrate and said SiC substrate is disposed in said container. | 11-17-2011 |
20120056203 | SEMICONDUCTOR DEVICE - A JFET, which is a semiconductor device allowing for reduced manufacturing cost, includes: a silicon carbide substrate; an active layer made of single-crystal silicon carbide and disposed on one main surface of the silicon carbide substrate; a source electrode disposed on the active layer; and a drain electrode formed on the active layer and separated from the source electrode. The silicon carbide substrate includes: a base layer made of single-crystal silicon carbide, and a SiC layer made of single-crystal silicon carbide and disposed on the base layer. The SiC layer has a defect density smaller than that of the base layer. | 03-08-2012 |
20120126251 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SILICON CARBIDE SUBSTRATE, AND SEMICONDUCTOR DEVICE - A method for manufacturing a silicon carbide substrate achieves reduced manufacturing cost. The method includes the steps of: preparing a base substrate and a SiC substrate; fabricating a stacked substrate by stacking the base substrate and the SiC substrate; fabricating a connected substrate by heating the stacked substrate; transferring a void, formed at a connection interface, in a thickness direction of the connected substrate by heating the connected substrate to cause the base substrate to have a temperature higher than that of the SiC substrate; and removing the void by removing a region including a main surface of the base substrate opposite to the SiC substrate. | 05-24-2012 |
20120161157 | SILICON CARBIDE SUBSTRATE - A silicon carbide substrate, which achieves restrained warpage even when a different-type material layer made of a material other than silicon carbide, includes: a base layer made of silicon carbide; and a plurality of SiC layers arranged side by side on the base layer when viewed in a planar view and each made of single-crystal silicon carbide. A gap is formed between end surfaces of adjacent SiC layers. | 06-28-2012 |
20120184113 | METHOD AND DEVICE FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - A step of preparing a stack is performed to position each single-crystal substrate in a first single-crystal substrate group and a first base substrate face to face with each other, position each single-crystal substrate in a second single-crystal substrate group and a second base substrate face to face with each other, and stack the first single-crystal substrate group, the first base substrate, an insertion portion, the second single-crystal substrate group, and the second base substrate in one direction in this order. Next, the stack is heated so as to allow a temperature of the stack to reach a temperature at which silicon carbide can sublime and so as to form a temperature gradient in the stack with the temperature thereof getting increased in the above-described direction. In this way, silicon carbide substrates can be manufactured efficiently. | 07-19-2012 |
20120208302 | METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - There is provided a method for manufacturing a SiC semiconductor device achieving improved performance. The method for manufacturing the SiC semiconductor device includes the following steps. That is, a SiC semiconductor is prepared which has a first surface having at least a portion into which impurities are implanted. By cleaning the first surface of the SiC semiconductor, a second surface is formed. On the second surface, a Si-containing film is formed. By oxidizing the Si-containing film, an oxide film constituting the SiC semiconductor device is formed. | 08-16-2012 |
20120214309 | METHOD AND APPARATUS OF FABRICATING SILICON CARBIDE SEMICONDUCTOR DEVICE - A method of fabricating a SiC semiconductor device includes the steps of preparing a silicon carbide semiconductor including a first surface having impurities implanted at least partially, forming a second surface by dry etching the first surface of the silicon carbide semiconductor using gas including hydrogen gas, and forming an oxide film constituting the silicon carbide semiconductor device on the second surface. | 08-23-2012 |
Patent application number | Description | Published |
20100044721 | METHOD OF PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - The invention offers a method of producing a semiconductor device that can suppress the worsening of the property due to surface roughening of a wafer by sufficiently suppressing the surface roughening of the wafer in the heat treatment step and a semiconductor device in which the worsening of the property caused by the surface roughening is suppressed. The method of producing a MOSFET as a semiconductor device is provided with a step of preparing a wafer | 02-25-2010 |
20100090259 | LATERAL JUNCTION FIELD-EFFECT TRANSISTOR | 04-15-2010 |
20110001144 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A JFET is a semiconductor device allowing more reliable implementation of the characteristics essentially achievable by employing SiC as a material and includes a wafer having at least an upper surface made of silicon carbide, and a gate contact electrode formed on the upper surface. The wafer includes a first p-type region serving as an ion implantation region formed so as to include the upper surface. The first p-type region includes a base region disposed so as to include the upper surface, and a protruding region. The base region has a width (w | 01-06-2011 |
20110127585 | LATERAL JUNCTION FIELD-EFFECT TRANSISTOR - A lateral junction field-effect transistor capable of preventing the occurrence of leakage current and realizing a sufficient withstand voltage can be provided. In a lateral JFET according to the present invention, a buffer layer is located on a main surface of a SiC substrate and includes a p-type impurity. A channel layer is located on the buffer layer and includes an n-type impurity having a higher concentration than the concentration of the p-type impurity in the buffer layer. A source region and a drain region are of n-type and formed to be spaced from each other in a surface layer of the channel layer, and a p-type gate region is located in the surface layer of the channel layer and between the source region and the drain region. A barrier region is located in an interface region between the channel layer and the buffer layer and in a region located under the gate region and includes a p-type impurity having a higher concentration than the concentration of the p-type impurity in the buffer layer. | 06-02-2011 |
20120056201 | INSULATED GATE BIPOLAR TRANSISTOR - An IGBT, which is a vertical type IGBT allowing for reduced on-resistance while restraining defects from being produced, includes: a silicon carbide substrate, a drift layer, a well region, an n | 03-08-2012 |
20120056202 | SEMICONDUCTOR DEVICE - A MOSFET, which is a semiconductor device allowing for reduced on-resistance while restraining stacking faults from being produced due to heat treatment in a device manufacturing process, includes: a silicon carbide substrate; an active layer made of single-crystal silicon carbide and disposed on one main surface of the silicon carbide substrate; a source contact electrode disposed on the active layer; and a drain electrode formed on the other main surface of the silicon carbide substrate. The silicon carbide substrate includes: a base layer made of silicon carbide; and a SiC layer made of single-crystal silicon carbide and disposed on the base layer. Further, the base layer has an impurity concentration greater than 2×10 | 03-08-2012 |
20120119225 | SILICON CARBIDE SUBSTRATE, EPITAXIAL LAYER PROVIDED SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - The present invention provides a silicon carbide substrate, an epitaxial layer provided substrate, a semiconductor device, and a method for manufacturing the silicon carbide substrate, each of which achieves reduced on-resistance. The silicon carbide substrate is a silicon carbide substrate having a main surface, and includes: a SiC single-crystal substrate formed in at least a portion of the main surface; and a base member disposed to surround the SiC single-crystal substrate. The base member includes a boundary region and a base region. The boundary region is adjacent to the SiC single-crystal substrate in a direction along the main surface, and has a crystal grain boundary therein. The base region is adjacent to the SiC single-crystal substrate in a direction perpendicular to the main surface, and has an impurity concentration higher than that of the SiC single-crystal substrate. | 05-17-2012 |
20120161158 | COMBINED SUBSTRATE HAVING SILICON CARBIDE SUBSTRATE - A first silicon carbide substrate has a first backside surface connected to a supporting portion, a first front-side surface opposite to the first backside surface, and a first side surface connecting the first backside surface and the first front-side surface to each other. A second silicon carbide substrate has a second backside surface connected to the supporting portion, a second front-side surface opposite to the second backside surface, and a second side surface connecting the second backside surface and the second front-side surface to each other and forming a gap between the first side surface and the second side surface. A closing portion closes the gap. Thereby, foreign matters can be prevented from remaining in a gap between a plurality of silicon carbide substrates provided in a combined substrate. | 06-28-2012 |
20120273800 | COMPOSITE SUBSTRATE HAVING SINGLE-CRYSTAL SILICON CARBIDE SUBSTRATE - A first vertex of a first single-crystal silicon carbide substrate and a second vertex of a second single-crystal silicon carbide substrate abut each other such that a first side of the first single-crystal silicon carbide substrate and a second side of the second single-crystal silicon carbide substrate are aligned. In addition, at least a part of the first side and at least a part of the second side abut on a third side of a third single-crystal silicon carbide substrate. Thus, in manufacturing a semiconductor device including a composite substrate, process fluctuations caused by a gap between the single-crystal silicon carbide substrates can be suppressed. | 11-01-2012 |
20120276715 | METHOD FOR MANUFACTURING COMBINED SUBSTRATE HAVING SILICON CARBIDE SUBSTRATE - A connected substrate having a supporting portion and first and second silicon carbide substrates is prepared. The first silicon carbide substrate has a first backside surface connected to the supporting portion, a first front-side surface, and a first side surface connecting the first backside surface and the first front-side surface to each other. The second silicon carbide substrate has a second backside surface connected to the supporting portion, a second front-side surface, and a second side surface connecting the second backside surface and the second front-side surface to each other and forming a gap between the first side surface and the second side surface. A filling portion for filling the gap is formed. Then, the first and second front-side surfaces are polished. Then, the filling portion is removed. Then, a closing portion for closing the gap is formed. | 11-01-2012 |
Patent application number | Description | Published |
20110284873 | SILICON CARBIDE SUBSTRATE - A silicon carbide substrate has a substrate region and a support portion. The substrate region has a first single crystal substrate. The support portion is joined to a first backside surface of the first single crystal. The dislocation density of the first single crystal substrate is lower than the dislocation density of the support portion. At least one of the substrate region and the support portion has voids. | 11-24-2011 |
20110306181 | METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE - A method of manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate formed of silicon carbide and a SiC substrate formed of single crystal silicon carbide; fabricating a stacked substrate by stacking the base substrate and the SiC substrate to have their main surfaces in contact with each other; heating the stacked substrate to join the base substrate and the SiC substrate and thereby fabricating a joined substrate; and heating the joined substrate such that a temperature difference is formed between the base substrate and the SiC substrate, and thereby discharging voids formed at the step of fabricating the joined substrate at an interface between the base substrate and the SiC substrate to the outside. | 12-15-2011 |
20120003812 | METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE - A plurality of silicon carbide substrates and a support portion are heated. A temperature of a first radiation plane facing the plurality of silicon carbide substrates in a first space extending from the plurality of silicon carbide substrates in a direction perpendicular to one plane and away from the support portion is set to a first temperature. A temperature of a second radiation plane facing the support portion in a second space extending from the support portion in a direction perpendicular to one plane and away from the plurality of silicon carbide substrates is set to a second temperature higher than the first temperature. A temperature of a third radiation plane facing the plurality of silicon carbide substrates in a third space extending from a gap among the plurality of silicon carbide substrates along one plane is set to a third temperature lower than the second temperature. | 01-05-2012 |
20120009761 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - At least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface and main surface is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface and main surface. The surface layer is removed at least partially. Following this removing step, the backside surface and main surface are connected to each other. | 01-12-2012 |
20120070605 | SILICON CARBIDE INGOT, SILICON CARBIDE SUBSTRATE, MANUFACTURING METHOD THEREOF, CRUCIBLE, AND SEMICONDUCTOR SUBSTRATE - An SiC ingot includes a bottom face having 4 sides; four side faces extending from the bottom face in a direction intersecting the direction of the bottom face; and a growth face connected with the side faces located at a side opposite to the bottom face. At least one of the bottom face, the side faces, and the growth face is the {0001} plane, {1-100} plane, {11-20} plane, or a plane having an inclination within 10° relative to these planes. | 03-22-2012 |