Patent application number | Description | Published |
20120122292 | Methods of Forming a Non-Volatile Resistive Oxide Memory Array - A method of forming a non-volatile resistive oxide memory array includes forming a plurality of one of conductive word lines or conductive bit lines over a substrate. Metal oxide-comprising material is formed over the plurality of said one of the word lines or bit lines. A series of elongated trenches is provided over the plurality of said one of the word lines or bit lines. A plurality of self-assembled block copolymer lines is formed within individual of the trenches in registered alignment with and between the trench sidewalls. A plurality of the other of conductive word lines or conductive bit lines is provided from said plurality of self-assembled block copolymer lines to form individually programmable junctions comprising said metal oxide-comprising material where the word lines and bit lines cross one another. | 05-17-2012 |
20120218810 | Methods Of Reading And Using Memory Cells - Some embodiments include methods of reading memory cells. The memory cells have a write operation that occurs only if a voltage of sufficient absolute value is applied for a sufficient duration of time; and the reading is conducted with a pulse that is of too short of a time duration to be sufficient for the write operation. In some embodiments, the pulse utilized for the reading may have an absolute value of voltage that is greater than or equal to the voltage utilized for the write operation. In some embodiments, the memory cells may comprise non-ohmic devices; such as memristors and diodes. | 08-30-2012 |
20130005080 | Methods Utilizing Microwave Radiation During Formation Of Semiconductor Constructions - Some embodiments include methods in which microwave radiation is used to activate dopant and/or increase crystallinity of semiconductor material during formation of a semiconductor construction. In some embodiments, the microwave radiation has a frequency of about 5.8 gigahertz, and a temperature of the semiconductor construction does not exceed about 500° C. during the exposure to the microwave radiation. | 01-03-2013 |
20130084695 | Methods of Forming Diodes - Some embodiments include methods of forming diodes. A stack may be formed over a first conductive material. The stack may include, in ascending order, a sacrificial material, at least one dielectric material, and a second conductive material. Spacers may be formed along opposing sidewalls of the stack, and then an entirety of the sacrificial material may be removed to leave a gap between the first conductive material and the at least one dielectric material. In some embodiments of forming diodes, a layer may be formed over a first conductive material, with the layer containing supports interspersed in sacrificial material. At least one dielectric material may be formed over the layer, and a second conductive material may be formed over the at least one dielectric material. An entirety of the sacrificial material may then be removed. | 04-04-2013 |
20130187117 | Memory Cells and Methods of Forming Memory Cells - Some embodiments include memory cells which contain, in order; a first electrode material, a first metal oxide material, a second metal oxide material, and a second electrode material. The first metal oxide material has at least two regions which differ in oxygen concentration relative to one another. One of the regions is a first region and another is a second region. The first region is closer to the first electrode material than the second region, and has a greater oxygen concentration than the second region. The second metal oxide material includes a different metal than the first metal oxide material. Some embodiments include methods of forming memory cells in which oxygen is substantially irreversibly transferred from a region of a metal oxide material to an oxygen-sink material. The oxygen transfer creates a difference in oxygen concentration within one region of the metal oxide material relative to another. | 07-25-2013 |
20130285110 | SELECT DEVICES INCLUDING AN OPEN VOLUME, AND RELATED METHODS, MEMORY DEVICES, AND ELECTRONIC SYSTEMS - Select devices including an open volume that functions as a high bandgap material having a low dielectric constant are disclosed. The open volume may provide a more nonlinear, asymmetric I-V curve and enhanced rectifying behavior in the select devices. The select devices may comprise, for example, a metal-insulator-insulator-metal (MIIM) diode. Various methods may be used to form select devices and memory systems including such select devices. Memory devices and electronic systems include such select devices. | 10-31-2013 |
20130314973 | Memory Cells, Methods of Programming Memory Cells, and Methods of Forming Memory Cells - Some embodiments include methods of programming a memory cell. A plurality of charge carriers may be moved within the memory cell, with an average charge across the moving charge carriers having an absolute value greater than 2. Some embodiments include methods of forming and programming an ionic-transport-based memory cell. A stack is formed to have programmable material between first and second electrodes. The programmable material has mobile ions which are moved within the programmable material to transform the programmable material from one memory state to another. An average charge across the moving mobile ions has an absolute value greater than 2. Some embodiments include memory cells with programmable material between first and second electrodes. The programmable material includes an aluminum nitride first layer, and includes a second layer containing a mobile ion species in common with the first layer. | 11-28-2013 |
20140051208 | Memory Cells and Methods of Forming Memory Cells - Some embodiments include memory cells which contain, in order; a first electrode material, a first metal oxide material, a second metal oxide material, and a second electrode material. The first metal oxide material has at least two regions which differ in oxygen concentration relative to one another. One of the regions is a first region and another is a second region. The first region is closer to the first electrode material than the second region, and has a greater oxygen concentration than the second region. The second metal oxide material includes a different metal than the first metal oxide material. Some embodiments include methods of forming memory cells in which oxygen is substantially irreversibly transferred from a region of a metal oxide material to an oxygen-sink material. The oxygen transfer creates a difference in oxygen concentration within one region of the metal oxide material relative to another. | 02-20-2014 |
20150140773 | METHODS OF FORMING INSULATIVE ELEMENTS - Methods of forming an insulative element are described, including forming a first metal oxide material having a first dielectric constant, forming a second metal oxide material having a second dielectric constant different from the first, and heating at least portions of the structure to crystallize at least a portion of at least one of the first dielectric material and the second dielectric material. Methods of forming a capacitor are described, including forming a first electrode, forming a dielectric material with a first oxide and a second oxide over the first electrode, and forming a second electrode over the dielectric material. Structures including dielectric materials are also described. | 05-21-2015 |
Patent application number | Description | Published |
20140104932 | Memory Cells, Non-Volatile Memory Arrays, Methods Of Operating Memory Cells, Methods Of Writing To And Writing From A Memory Cell, And Methods Of Programming A Memory Cell - In one aspect, a method of operating a memory cell includes using different electrodes to change a programmed state of the memory cell than are used to read the programmed state of the memory cell. In one aspect, a memory cell includes first and second opposing electrodes having material received there-between. The material has first and second lateral regions of different composition relative one another. One of the first and second lateral regions is received along one of two laterally opposing edges of the material. Another of the first and second lateral regions is received along the other of said two laterally opposing edges of the material. At least one of the first and second lateral regions is capable of being repeatedly programmed to at least two different resistance states. Other aspects and implementations are disclosed. | 04-17-2014 |
20140153316 | Methods of Reading and Using Memory Cells - Some embodiments include methods of reading memory cells. The memory cells have a write operation that occurs only if a voltage of sufficient absolute value is applied for a sufficient duration of time; and the reading is conducted with a pulse that is of too short of a time duration to be sufficient for the write operation. In some embodiments, the pulse utilized for the reading may have an absolute value of voltage that is greater than or equal to the voltage utilized for the write operation. In some embodiments, the memory cells may comprise non-ohmic devices; such as memristors and diodes. | 06-05-2014 |
20140332751 | Memory Cells, Methods of Programming Memory Cells, and Methods of Forming Memory Cells - Some embodiments include methods of programming a memory cell. A plurality of charge carriers may be moved within the memory cell, with an average charge across the moving charge carriers having an absolute value greater than 2. Some embodiments include methods of forming and programming an ionic-transport-based memory cell. A stack is formed to have programmable material between first and second electrodes. The programmable material has mobile ions which are moved within the programmable material to transform the programmable material from one memory state to another. An average charge across the moving mobile ions has an absolute value greater than 2. Some embodiments include memory cells with programmable material between first and second electrodes. The programmable material includes an aluminum nitride first layer, and includes a second layer containing a mobile ion species in common with the first layer. | 11-13-2014 |
20150137065 | Memory Cells and Methods of Forming Memory Cells - Some embodiments include memory cells which contain, in order; a first electrode material, a first metal oxide material, a second metal oxide material, and a second electrode material. The first metal oxide material has at least two regions which differ in oxygen concentration relative to one another. One of the regions is a first region and another is a second region. The first region is closer to the first electrode material than the second region, and has a greater oxygen concentration than the second region. The second metal oxide material includes a different metal than the first metal oxide material. Some embodiments include methods of forming memory cells in which oxygen is substantially irreversibly transferred from a region of a metal oxide material to an oxygen-sink material. The oxygen transfer creates a difference in oxygen concentration within one region of the metal oxide material relative to another. | 05-21-2015 |
20150380635 | METHODS TO IMPROVE THE CRYSTALLINITY OF PbZrTiO3 AND Pt FILMS FOR MEMS APPLICATIONS - A microelectronic device containing a piezoelectric component is formed sputtering an adhesion layer of titanium on a substrate by an ionized metal plasma (IMP) process. The adhesion layer is oxidized so that at least a portion of the titanium is converted to a layer of substantially stoichiometric titanium dioxide (TiO | 12-31-2015 |
Patent application number | Description | Published |
20120150642 | ARTIFICIAL INTELLIGENCE-BASED RECOMMENDER AND SELF-PROVISIONER - A method including providing at least one of a phone service, an Internet access service, or a television service to customers; identifying a customer when the customer uses the at least one of the phone service, the Internet access service, or the television service; selecting products or services for which the customer qualifies based on the identifying; gathering customer-specific data for the customer; generating recommendations that pertain to the at least one of the phone service, the Internet access service, or the television service for the customer based on the products or the services for which the customer qualifies, the customer-specific data, and other factors, wherein the other factors include at least one of a location of the customer or a time in which the recommendations is to be provided to the customer; and providing the recommendations to the customer via the at least service. | 06-14-2012 |
20120151514 | INTELLIGENT OFFER GENERATION - A method may include receiving a user request to view a channel to which the user does not currently subscribe. Customer information regarding the user and marketing rules regarding a plurality of combination offers that include the channel may be obtained. A number of combination offers from the plurality of combination offers may be determined based on the customer information and the marketing rules. One or more of the determined combination offers may be provided to the user. A user request to purchase a selected one of the provided combination offers may be received. The channels included within the selected combination offer may be provisioned based on the user request. | 06-14-2012 |
20120246676 | TARGETING ADS IN CONJUNCTION WITH SET-TOP BOX WIDGETS - A network device receives selection of a widget, for execution at a set-top box (STB) associated with a customer, from multiple widgets stored at a server, where each of the multiple widgets includes a software application that the STB can execute to render graphics or images on a screen or to perform other functions associated with the STB. The network device analyzes information associated with the customer and the widget, and selects an ad for the customer based on the analysis, where the ad relates to a product or service available for purchase. The network device causes the selected widget and the selected ad to be delivered to the STB. | 09-27-2012 |
20130036443 | INTERACTIVE AND PROGRAM HALF-SCREEN - A method and system that provides a television service via a customer device; receives a customer input to invoke an interactive mode pertaining to the television service; retrieves a graphical user interface that includes an interactive and program half-screen comprising an interactive half-screen and a program half-screen, wherein the interactive half-screen is substantially a same size as a program half-screen, and the interactive half-screen and the program half-screen occupy an entire size of the graphical user interface; and displays the graphical user interface via the customer device, wherein the interactive half-screen includes one or more interactive graphical elements and the program half-screen includes a program window to display a program. | 02-07-2013 |
20130042269 | INTERACTIVE MASTHEAD - A method and system that provides a television service; receives a customer input to access a graphical user interface that includes a main menu pertaining to the television service; retrieves the graphical user interface; and displays the graphical user interface via the customer device, wherein the graphical user interface includes a main menu body and an interactive masthead having an interactive element that permits a customer to access content via the interactive element. | 02-14-2013 |
20130042284 | PAY-PER-VIEW PORTAL - A method and system that provides customers a pay-per-view portal, accessible via a television service, a mobile service, or an Internet service. The pay-per-view portal permits customers to search for pay-per-view programs and provide search results that include related content to pay-per-view programs including related videos, articles, biographical summaries, stats on players or fighters, and images. The pay-per-view portal provides personalized pay-per-view program recommendations, pay-per-view calendars, and sub-portals directed to categories or sub-categories of pay-per-view programs. The pay-per-view portal also provides the ordering and purchasing of pay-per-view programs days, weeks, or months in advance of the airing of the pay-per-view programs. | 02-14-2013 |
20130246155 | DIGITAL CONTENT PURCHASE OFFERS VIA SET-TOP BOX - A network device receives details of a purchase offer for digital content, where the purchase offer includes a price for the digital content at a required customer purchasing participation threshold, and where the required customer purchasing participation threshold includes a number of customers that must agree to purchase the digital content at the price for the purchase offer to be fulfilled. The network device targets multiple customers based on customer profile data, and presents the purchase offer to the multiple customers, via multiple different devices associated with respective ones of the multiple customers, during the offer period. The network device charges participating customers the purchase offer price, if the purchasing participation threshold is reached by expiration of the offer period; and notifies the participating customers of expiration of the purchase offer, if the purchasing participation threshold is not reached by the expiration of the offer period. | 09-19-2013 |
Patent application number | Description | Published |
20090126616 | Offshore floating production, storage, and off-loading vessel for use in ice-covered and clear water applications - An offshore floating production, storage, and off-loading vessel has a monolithic non ship-shaped hull of polygonal configuration surrounding a central double tapered conical moon pool and contains water ballast and oil storage compartments. The exterior side walls of the hull have flat surfaces and sharp corners to cut ice sheets, resist and break ice, and move ice pressure ridges away from the structure. An adjustable water ballast system induces heave, roll, pitch and surge motions of the vessel to dynamically position and maneuver the vessel to accomplish ice cutting, breaking and moving operations. The moon pool shape and other devices on the vessel provide added virtual mass capable of increasing the natural period of the roll and heave modes, reducing dynamic amplification and resonance due to waves and vessel motion, and facilitate maneuvering the vessel. The vessel may be moored by a disconnectable turret buoy received in a support frame at the bottom of the moon pool and to which flexible well risers and mooring lines are connected. | 05-21-2009 |
20110120126 | OFFSHORE FLOATING PLATFORM WITH OCEAN THERMAL ENERGY CONVERSION SYSTEM - An offshore floating platform having at least one buoyant column with an upper end extending above a sea surface, a lower end submerged below the sea surface, and at least one keel tank disposed at the lower end. A deck is supported at the upper end the column. An ocean thermal energy conversion (OTEC) system is integrated with the platform in which heat is extracted from warm sea surface waters to vaporize a liquid working fluid and heat is rejected to cold water from lower depths of the sea to condense the vaporized working fluid. At least one turbine and power generator is disposed on the deck, at least one evaporator is disposed on the platform beneath the deck, and at least one condenser is disposed on the seabed or platform or keel tank a distance beneath the evaporator. | 05-26-2011 |
20120298027 | OFFSHORE FLOATING PRODUCTION, STORAGE, AND OFF-LOADING VESSEL FOR USE IN ICE-COVERED AND CLEAR WATER APPLICATIONS - An offshore floating production, storage, and off-loading vessel has a hull of generally cylindrical or polygonal configuration surrounding a central double tapered conical moon pool and contains water ballast and oil and/or liquefied gas storage compartments. An adjustable water ballast system induces heave, roll, pitch and surge motions of the vessel to dynamically position and maneuver the vessel. The moon pool shape and other devices on the vessel provide added virtual mass for increasing the natural period of the roll and heave modes, reducing dynamic amplification and resonance due to waves and vessel motion, and facilitate maneuvering the vessel. A disconnectable turret buoy at the bottom of the moon pool connects risers and mooring lines. | 11-29-2012 |
Patent application number | Description | Published |
20090251164 | PROCESS AND TEMPERATURE INSENSITIVE FLICKER NOISE MONITOR CIRCUIT - In an apparatus and method for monitoring defects in wafers, a monitoring circuit is fabricated on an area of each one of the wafers. The monitoring circuit includes representative devices that replicate similar devices located in a die area of the wafers. Defects if present in the representative devices contribute to a generation of a noise, thereby causing an imbalance in a differential signal measurable across selected ones of the representative devices. A digitizing circuit that uses a common mode voltage as a reference to measure the imbalance digitizes the differential signal to a digital signal, the digital signal being indicative of the noise generated by the defects. The digital signal is stored over a configurable time interval to form a digital bit stream. The digital bit stream is compared to a reference to determine whether the defects are within an allowable range. | 10-08-2009 |
20100197053 | PROCESS AND TEMPERATURE INSENSITIVE FLICKER NOISE MONITOR CIRCUIT - In an apparatus and method for monitoring defects in wafers, a monitoring circuit is fabricated on an area of each one of the wafers. The monitoring circuit includes representative devices that replicate similar devices located in a die area of the wafers. Defects if present in the representative devices contribute to a generation of a noise, thereby causing an imbalance in a differential signal measurable across selected ones of the representative devices. A digitizing circuit that uses a common mode voltage as a reference to measure the imbalance digitizes the differential signal to a digital signal, the digital signal being indicative of the noise generated by the defects. The digital signal is stored over a configurable time interval to form a digital bit stream. The digital bit stream is compared to a reference to determine whether the defeats are within an allowable range. | 08-05-2010 |
20120086589 | PIPELINED CONTINUOUS-TIME SIGMA DELTA MODULATOR - Traditionally, pipelined continuous-time (CT) sigma-delta modulators (SDM) have been difficult to build due at least in part to the difficulties in calibrating the pipeline. Here, however, a pipelined CT SDM is provided that has an architecture that is conducing to being calibrated. Namely, the system includes a digital filter and other features that can be adjusted to account for input imbalance errors and well as quantization leakage noise. | 04-12-2012 |
20120086590 | METHOD FOR CALBRATING A PIPELINED CONTINUOUS-TIME SIGMA DELTA MODULATOR - Traditionally, pipelined continuous-time (CT) sigma-delta modulators (SDM) have been difficult to build due at least in part to the difficulties in calibrating the pipeline. Here, however, a pipelined CT SDM is provided that has an architecture that is conducing to being calibrated. Namely, the system includes a digital filter and other features that can be adjusted to account for input imbalance errors and well as quantization leakage noise. | 04-12-2012 |
20120098572 | LATCHED COMPARATOR HAVING ISOLATION INDUCTORS - Traditionally, latched comparators have suffered from performance problems related to exposure of the latch to load capacitances. Even attempts to isolate the latch from the load capacitances by way of resistors has resulted in performance problems (namely, voltage swing degradation). Here, however, a latched comparator is provided that employs inductors to generally provide isolation from load capacitances, which generally improves performance. Moreover, the latch has been modified to accommodate the inductors during a track period (namely, provision of grounding paths). | 04-26-2012 |
20120262138 | SYSTEM AND METHOD FOR LOAD CURRENT DEPENDENT OUTPUT BUFFER COMPENSATION - A load current compensating output buffer circuit and method are disclosed. The circuit includes a buffer amplifier coupled to a supply voltage and the inverting input receives an input voltage and the non-inverting input couples to an output capacitive load. A feedback impedance with a variable resistance circuit and a Miller capacitance in series is coupled to an output of the buffer amplifier and the capacitive load. A pass transistor couples to the supply voltage and the output capacitive load, the pass transistor having a gate terminal coupled to the output of the output buffer amplifier and the feedback impedance, a load current passing through the pass transistor. A sense circuit is configured to sense the load current and apply a control voltage to the variable resistance circuit to vary the resistance of the variable resistance circuit based on the load current. | 10-18-2012 |
20120262319 | METHOD FOR CALBRATING A PIPELINED CONTINUOUS-TIME SIGMA DELTA MODULATOR - Traditionally, pipelined continuous-time (CT) sigma-delta modulators (SDM) have been difficult to build due at least in part to the difficulties in calibrating the pipeline. Here, however, a pipelined CT SDM is provided that has an architecture that is conducing to being calibrated. Namely, the system includes a digital filter and other features that can be adjusted to account for input imbalance errors and well as quantization leakage noise. | 10-18-2012 |
20120286981 | COMPRESSIVE SENSING ANALOG-TO-DIGITAL CONVERTERS - Compressive sensing is an emerging field that attempts to prevent the losses associated with data compression and improve efficiency overall, and compressive sensing looks to perform the compression before or during capture, before energy is wasted. Here, several analog-to-digital converter (ADC) architectures are provided to perform compressive sensing. Each of these new architectures selects resolutions for each sample substantially at random and adjusts the sampling rate as a function of these selected resolutions. | 11-15-2012 |
20120322400 | CURRENT MODE BLIXER WITH NOISE CANCELLATION - Blixers, which are a relatively recent development, have not be studied as extensively as many older circuit designs. Here, a blixer is provided that improves linearity and reduces noise over other conventional blixer designs. To accomplish this, the blixer provided here uses a differential amplifier and/or a dummy path within its mixing circuit to perform noise reduction (and improve linearity). | 12-20-2012 |
20120326906 | PIPELINED CONTINUOUS-TIME SIGMA DELTA MODULATOR - Traditionally, pipelined continuous-time (CT) sigma-delta modulators (SDM) have been difficult to build due at least in part to the difficulties in calibrating the pipeline. Here, however, a pipelined CT SDM is provided that has an architecture that is conducing to being calibrated. Namely, the system includes a digital filter and other features that can be adjusted to account for input imbalance errors and well as quantization leakage noise. | 12-27-2012 |
20130015918 | HIGH SPEED AMPLIFIERAANM Wang Limketkai; Victoria L.AACI DallasAAST TXAACO USAAGP Wang Limketkai; Victoria L. Dallas TX USAANM Srinivasan; VenkateshAACI DallasAAST TXAACO USAAGP Srinivasan; Venkatesh Dallas TX US - For high speed amplifiers, the parasitic capacitances between a differential input pairs and a cascoded bias network can introduce a pole that can affect performance. Here, a feedforward network has been provided that compensates for this pole by introducing a zero that effectively cancels the pole, moving the next parasitic without any additional power. This is generally accomplished by using a pair of feedforward capacitors coupled across the transistors of the cascoded bias network, which reduced power consumption. | 01-17-2013 |
20130063210 | HIGH SPEED AMPLIFIER - For high speed amplifiers, the parasitic capacitances from the differential input pair introduce a zero that can affect performance. Here, a neutralization network has been provided that compensates for this zero by shifting its position. This is generally accomplished by using a pair of capacitors that are cross-coupled across the differential input pair of the amplifier. | 03-14-2013 |
20130063289 | CORRECTING FOR NON-LINEARITIES IN A CONTINUOUS-TIME SIGMA-DELTA MODULATOR - In higher order sigma-delta modulators (SDMs), there are oftentimes errors introduced by the digital-to-analog (DAC) switches. Namely, parasitic capacitances associated with switches can introduce second harmonic spurs. Here, however, compensation circuits and buffers are provided. The buffers bias the switches in saturation, and the compensation circuits provide a “ground boost” for the buffers. The combination of the buffer and compensation circuit reduces the second harmonic spur, while also improving the Signal-to-Noise Ratio (SNR) and Signal-to-Noise-plus-Distortion Ratio (SNDR). | 03-14-2013 |
20130063291 | EXCESS LOOP DELAY COMPENSATION FOR A CONTINUOUS TIME SIGMA DELTA MODULATOR - A method and corresponding apparatus are provided. In operation, an analog signal is integrated with an integrator to generate an integrated analog signal. The integrated analog signal is compared, in synchronization with a first clock signal and a second clock signal, to a reference voltage with a plurality of comparators to generate a comparator output signal. A feedback current is then generated, in synchronization with the second clock signal, from the comparator output signal. The feedback current is fed back to at least one of the comparators, and the comparator output signal is latched in synchronization with the first clock signal to generate a latched output signal. This latched output signal is converted to a feedback analog signal, and a difference between the analog signal and the feedback analog signal is determined. | 03-14-2013 |
20150138004 | METHOD FOR CALIBRATING A PIPELINED CONTINUOUS-TIME SIGMA DELTA MODULATOR - Traditionally, pipelined continuous-time (CT) sigma-delta modulators (SDM) have been difficult to build due at least in part to the difficulties in calibrating the pipeline. Here, however, a pipelined CT SDM is provided that has an architecture that is conducing to being calibrated. Namely, the system includes a digital filter and other features that can be adjusted to account for input imbalance errors and well as quantization leakage noise. | 05-21-2015 |
20160134240 | METHOD AND CIRCUITRY FOR CMOS TRANSCONDUCTOR LINEARIZATION - Third order distortion is reduced in a CMOS transconductor circuit that includes a first N-channel transistor and a first P-channel transistor, gates of the first N-channel transistor and the first P-channel transistor being coupled to receive an input signal. Drains of the first N-channel transistor and first P-channel transistor are coupled to an output conductor. A first degeneration resistor is coupled between a source of the first P-channel transistor and a first supply voltage and a second degeneration resistor is coupled between a source of the first N-channel transistor and a second supply voltage. A first low impedance bypass circuit is coupled between the sources of the first P-channel transistor and the first N-channel transistor. A low impedance bypass circuit re-circulates second order distortion current that is induced by second-order distortion in drain currents of the first P-channel transistor and the first N-channel transistor, through the first N-channel transistor and first P-channel transistor. | 05-12-2016 |
Patent application number | Description | Published |
20090243727 | Compensating for non-linear capacitance effects in a power amplifier - In one implementation, a power amplifier may include a gain device to receive an input signal and to output an amplified signal, and a compensation device coupled to the gain device to compensate for a change in a capacitance of the gain device occurring due to a change in the input signal. The power amplifier may be formed using a complementary metal oxide semiconductor (CMOS) process. | 10-01-2009 |
20090256631 | Providing pre-distortion to an input signal - In one implementation, the present invention includes a diode device to receive an incoming radio frequency (RF) signal to be amplified in a gain device of an amplifier and to provide a pre-distorted signal. Based on this pre-distorted signal, the gain device can output an amplified RF signal having substantial linearity to the incoming RF signal. | 10-15-2009 |
20090273397 | Controlling power with an output network - In one embodiment, the present invention includes multiple gain stages and an output network coupled to the gain stages. Each of the gain stages can be independently controlled to amplify a radio frequency (RF) signal to an output power level for transmission from a mobile wireless device. When controlled to be inactive, at least one of the gain stages can be placed into a low impedance state. | 11-05-2009 |
20090278609 | Supply control for multiple power modes of a power amplifier - In one embodiment, the present invention includes an apparatus having at least two gain stages to receive incoming signals and to output amplified signals, along with multiple regulators. More specifically, a linear regulator can be coupled to the first gain stage to provide a first regulated voltage to the first gain stage, and a switching regulator coupled to the second gain stage to provide a second regulated voltage to the second gain stage. | 11-12-2009 |
20100085119 | Generating A Process And Temperature Tracking Bias Voltage - In one embodiment, a method includes generating a current that is proportional to a mobility and an oxide capacitance of a tracking device and independent of a threshold voltage variation of the tracking device, generating a voltage from the current, and providing the voltage as at least part of a bias voltage for another device. In one embodiment, this other device may be a compensation circuit coupled to a main device to compensate for capacitance non-linearity of the main device. | 04-08-2010 |
20100164621 | OUTPUT GAIN STAGE FOR A POWER AMPLIFIER - In one embodiment, the present invention includes multiple gain stages to receive and amplify a differential input signal at different common mode voltages. The stages each may include a pair of linear NMOS gain transistors coupled to a primary coil of a given output transformer. One of the stages may include commonly coupled terminals coupled to a center tap of the primary coil of an output transformer of another stage, and a supply current provided to one of the stages is re-used for the other stage(s). | 07-01-2010 |
20110074509 | NON-LINEAR CAPACITANCE COMPENSATION - Embodiments are directed to capacitance compensation via a compensation device coupled to a gain device to compensate for a capacitance change occurring due to an input signal change, along with a controller coupled to the compensation device to receive the input signal and to control an amount of compensation based on the input signal. In some embodiments, banks may be formed of multiple compensation devices, where each of the banks has a different size and is coupled to receive a different set of bias voltages. | 03-31-2011 |
20130154744 | Non-Linear Capacitance Compensation - Embodiments are directed to capacitance compensation via a compensation device coupled to a gain device to compensate for a capacitance change occurring due to an input signal change, along with a controller coupled to the compensation device to receive the input signal and to control an amount of compensation based on the input signal. In some embodiments, banks may be formed of multiple compensation devices, where each of the banks has a different size and is coupled to receive a different set of bias voltages. | 06-20-2013 |
20130208832 | Partitioned radio-frequency apparatus and associated methods - Radio-frequency (RF) apparatus includes receiver analog circuitry that receives an RF signal and provides at least one digital signal to receiver digital circuitry that functions in cooperation with the receiver analog circuitry. The receiver analog circuitry and the receiver digital circuitry are partitioned so that interference effects between the receiver analog circuitry and the receiver digital circuitry tend to be reduced. | 08-15-2013 |
20140100002 | Power Amplifier Having An Integrated Microcontroller - In an embodiment, a power amplifier (PA) includes a signal processing path including gain stages to receive a radio frequency (RF) signal and to output an amplified RF signal, sensors coupled to the signal processing path each to sense a characteristic of operation of the PA, and a microcontroller configured to execute instructions and to receive the operation characteristic(s) and to control one or more parameters of the signal processing path responsive this operation characteristic. | 04-10-2014 |
20140256279 | Partitioned radio-frequency apparatus and associated methods - Radio-frequency (RF) apparatus includes receiver analog circuitry that receives an RF signal and provides at least one digital signal to receiver digital circuitry that functions in cooperation with the receiver analog circuitry. The receiver analog circuitry and the receiver digital circuitry are partitioned so that interference effects between the receiver analog circuitry and the receiver digital circuitry tend to be reduced. | 09-11-2014 |
20140295776 | Compensating for non-linear capacitance effects in a power amplifier - In one implementation, a power amplifier may include a gain device to receive an input signal and to output an amplified signal, and a compensation device coupled to the gain device to compensate for a change in a capacitance of the gain device occurring due to a change in the input signal. The power amplifier may be formed using a complementary metal oxide semiconductor (CMOS) process. | 10-02-2014 |