Bhavnagarwala
Azeez Bhavnagarwala, Newtown, CT US
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20080225573 | STATIC RANDOM ACCESS MEMORY CELL WITH IMPROVED STABILITY - A memory cell comprises a wordline, a first digital inverter with a first input and a first output, and a second digital inverter with a second input and a second output. Moreover, the memory cell further comprises a first feedback connection connecting the first output to the second input, and a second feedback connection connecting the second output to the first input. The first feedback connection comprises a first resistive element and the second feedback connection comprises a second resistive element. What is more, each digital inverter has an associated capacitance. The memory cell is configured such that reading the memory cell includes applying a read voltage pulse to the wordline. In addition, the first and second resistive elements are configured such that the first and second feedback connections have resistance-capacitance induced delays longer than the applied read voltage pulse. | 09-18-2008 |
Azeez Bhavnagarwala, Yorktown Heights, NY US
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20120179412 | Circuits and Methods for Characterizing Random Variations in Device Characteristics in Semiconductor Integrated Circuits - Circuits for measuring and characterizing random variations in device characteristics of integrated circuit devices. | 07-12-2012 |
Azeez J. Bhavnagarwala, Newtown, CT US
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20100041227 | METHODS FOR INCORPORATING HIGH DIELECTRIC MATERIALS FOR ENHANCED SRAM OPERATION AND STRUCTURES PRODUCED THEREBY - Methods for fabricating a hybrid interconnect structure that possesses a higher interconnect capacitance in one set of regions than in other regions on the same microelectronic chip. Several methods to fabricate such a structure are provided. Circuit implementations of such hybrid interconnect structures are described that enable increased static noise margin and reduce the leakage in SRAM cells and common power supply voltages for SRAM and logic in such a chip. Methods that enable combining these circuit benefits with higher interconnect performance speed and superior mechanical robustness in such chips are also taught. | 02-18-2010 |
20130132023 | STRUCTURE FOR CHARACTERIZING THROUGH-SILICON VIAS AND METHODS THEREOF - An integrated circuit device can include a number of test structures, whereby each test structure includes a TSV and a plurality of devices-under-test (DUTs). Each of the DUTs in a test structure has a different positional relationship, such as proximity or orientation, to the TSV. A test system can measure selected parameters such as transistor threshold voltage, leakage current, or other parameters, for each of the DUTs in the test structure. The measurements for different test structures can be combined to characterize nominal values of the measured parameter and its statistical distribution. This information provides an indication of how the measured parameter varies according to the positional relationship of a TSV to a DUT. | 05-23-2013 |
20140257738 | HIERARCHICALLY DIVIDED SIGNAL PATH FOR CHARACTERIZING INTEGRATED CIRCUITS - An apparatus includes an output pad, a plurality of arrays of test devices, a hierarchy of selection devices, and address logic. The hierarchy of selection devices includes a plurality of levels coupled between the output pad and the arrays of test devices. Each test device is coupled to a selection device in a first level of the hierarchy, and the selection devices for each array are coupled to one selection device in a second level of the hierarchy. The address logic is coupled to the hierarchy of selection devices and operable to enable one selection device in each level of the hierarchy to couple a selected test device in a selected array to the output pad. | 09-11-2014 |
Azeez Jennudin Bhavnagarwala, Danbury, CT US
Patent application number | Description | Published |
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20110316569 | Digital Interface for Fast, Inline, Statistical Characterization of Process, MOS Device and Circuit Variations - A Circuit architecture and a method for rapid and accurate statistical characterization of the variations in the electrical characteristics of CMOS process structures, MOS devices and Circuit parameters is provided. The proposed circuit architecture and method enables a statistical characterization throughput of <1 ms/DC sweep at <2 mV or <1 nA resolution accuracy of variations in voltage or current of the device under test. Salient features of proposed circuit architecture include a programmable ramp voltage generator that stimulates the device under test, a dual input 9-11 bit cyclic ADC that captures input and output DC voltage/current signals to/from the device under test, a 2 Kb latch bank that captures 9-11 bit streams for each measurement point in a DC sweep of programmable granularity and a clocking and control scheme that enables continuous measurement and stream out of digital data blocks from which the analog characteristics of the devices under test are reconstructed post measurement. | 12-29-2011 |