Young Seong
Young Seong Jeon, Gangnam-Gu KR
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20150045480 | Starch-Based Hot Melt Adhesive - An exemplary embodiment of the present invention provides starch-based hot melt adhesive comprised of a composition including starch, a thermoplastic polymer, a tackifier, a plasticizer, and an adhesion promoter. The hot melt adhesive according to the exemplary embodiment of the present invention contains about 25 to 55 weight % of the starch which is infinitely renewable biomass, and, thus, it is less harmful and more eco-friendly and has a reduced manufacturing costs and is less sensitive to exhaustion of petroleum-based resources, as compared with the conventional hot melt adhesive mainly containing a petroleum-based material. Further, the hot melt adhesive according to the exemplary embodiment of the present invention imparts excellent adhesion strength and workability at the time of adhesion between different kinds of adherends such as a hydrophobic adherend and a hydrophilic adherend and can be applied to various fields such as packaging, bookbinding, construction, woodworking, and textile fields. | 02-12-2015 |
Young Seong Lee, Anyang City KR
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20100041200 | Semiconductor transistor device and method for manufacturing the same - A semiconductor transistor device and a method for manufacturing the same are provided. The method includes forming a silicon epitaxial layer having a predetermined thickness in source and drain diffusion regions of a silicon semiconductor substrate and forming a source and drain junction by ion implantation and rapid annealing in the silicon semiconductor substrate in which the silicon epitaxial layer is formed. The semiconductor transistor device includes a silicon epitaxial layer formed to have a predetermined thickness in source and drain diffusion regions of a silicon semiconductor substrate. Thus, since a salicide layer is used without increase of leakage current, the transistor device having low power and high performance can be manufactured. | 02-18-2010 |
Young Seong Lee, Gyeonggi-Do KR
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20090127671 | METHOD FOR FORMING A GATE INSULATING LAYER OF A SEMICONDUCTOR DEVICE - Embodiments relate to a method for forming a gate insulating layer, which may include forming a device isolation layer being divided into a device active region and a device isolation region, growing a first oxide layer at an entire surface of the semiconductor substrate as a gate insulating layer, performing a first annealing process to form a diffusion barrier layer an interface between the first oxide layer and the device active region, etching and removing a first oxide layer and a diffusion barrier layer of the core power source wiring region by masking the input/output power source wiring region, growing a second oxide layer on the core power source wiring region, and performing a second annealing process to form an NO gate oxide layer on which an N-rich oxide layer at an interface of the core power source wiring region. | 05-21-2009 |
Young Seong Lee, Seoul KR
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20150144900 | LAYERED STRUCTURE FOR OLED DEVICE, METHOD FOR MANUFACTURING THE SAME, AND OLED DEVICE HAVING THE SAME - A layered structure for an organic light-emitting diode (OLED) device, the layered structure including a light-transmissive substrate and an internal extraction layer formed on one side of the light-transmissive substrate, in which the internal extraction layer includes (1) a scattering area containing scattering elements composed of solid particles and pores, the solid particles having a density that decreases as it goes away from the interface with the light-transmissive substrate, and the pores having a density that increases as it goes away from the interface with the light-transmissive substrate, and (2) a free area where no scattering elements are present, formed from the surface of the internal extraction layer, which is opposite to the interface, to a predetermined depth. | 05-28-2015 |
20150179979 | LAYERED STRUCTURE FOR OLED DEVICE, METHOD FOR MANUFACTURING THE SAME, AND OLED DEVICE HAVING THE SAME - A layered structure for an organic light-emitting diode (OLED) device, the layered structure including a light-transmissive substrate and an internal extraction layer formed on one side of the light-transmissive substrate, in which the internal extraction layer includes (1) a scattering area containing scattering elements composed of solid particles and pores, the solid particles having a density that decreases as it goes away from the interface with the light-transmissive substrate, and the pores having a density that increases as it goes away from the interface with the light-transmissive substrate, and (2) a free area where no scattering elements are present, formed from the surface of the internal extraction layer, which is opposite to the interface, to a predetermined depth. | 06-25-2015 |
20150255753 | METHOD OF PRODUCING A TRANSPARENT DIFFUSIVE OLED SUBSTRATE - A method of producing a transparent diffusive OLED substrate includes lapping one face or both faces of a flat translucent glass substrate with an abrasive slurry, so as to obtain a flat glass substrate with at least one roughened surface having a roughness profile with an arithmetical mean deviation R | 09-10-2015 |
20160087228 | TRANSPARENT DIFFUSIVE OLED SUBSTRATE AND METHOD FOR PRODUCING SUCH A SUBSTRATE - A transparent diffusive OLED substrate includes the following successive elements or layers: a transparent flat substrate made of mineral glass having a refractive index of between 1.45 and 1.65, a rough low index layer including mineral particles, the mineral particles being bonded to one side of the substrate by means of a low index enamel, the mineral particles near, at or protruding from the enamel's surface creating a surface roughness characterized by an arithmetical mean deviation Ra comprised between 0.15 and 3 μm, the mineral particles and enamel both having a refractive index of between 1.45 and 1.65; a high index planarization layer made of an enamel having a refractive index comprised between 1.8 and 2.1 covering the rough low index layer (b). | 03-24-2016 |
Young Seong Lee, Seoul City KR
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20160126481 | TRANSPARENT DIFFUSIVE OLED SUBSTRATE AND METHOD FOR PRODUCING SUCH A SUBSTRATE - A transparent diffusive OLED substrate includes the following successive elements or layers: (a) a transparent flat substrate made of mineral glass having a refractive index n | 05-05-2016 |