Patent application number | Description | Published |
20100103663 | LED ARRAY BEAM CONTROL LUMINAIRES - The present invention provides LED array systems with which provides for a LED array luminair with reduced color fringing, light spill reduction and beam angle control and LED protection. | 04-29-2010 |
20100225639 | ARRAY OF LED ARRAY LUMINAIRES - The present invention provides LED array systems with a control system for arrays of LED array luminaires that allows for display of images or light patterns across and array of luminiairs over a low bandwidth control protocol. | 09-09-2010 |
20100245279 | DISPLAY AND DISPLAY CONTROL SYSTEM FOR AN AUTOMATED LUMINAIRE - A display and control system for automated luminaires for easier and quicker service and usage monitoring. | 09-30-2010 |
20110103049 | UNIVERSAL COLOR CONTROL MATRIX - The present invention provides an improved paradigm for controlling multicolored LED's in an automated lighting system that is particularly useful for LED fixtures using LED colors other than or in addition to Red, Green and Blue and with LED fixtures used in combination with subtractive (CMY) color mixing fixtures. | 05-05-2011 |
20110121749 | LED ARRAY LUMINAIRES - The present invention provides LED array systems with improved methods of powering LED in the array by monitoring the relationship between temperature and driving power to predict how much power can be safely applied to the LEDs. The present invention also provides for a control system for LED arrays that allows for display of images or light patterns across and array of luminiairs over a low bandwidth control protocol. The present invention also provides for a LED array luminair with reduced color fringing, light spill reduction and beam angle control. | 05-26-2011 |
20150192274 | LED ARRAY BEAM CONTROL LUMINAIRES - The present invention provides LED array systems with which provides for a LED array luminair with reduced color fringing, light spill reduction and beam angle control and LED protection. | 07-09-2015 |
Patent application number | Description | Published |
20080264870 | Cooling water corrosion inhibition method - A method of providing corrosion inhibition to copper, nickel, aluminum, zinc, tin, lead, beryllium, carbon steel, various alloys of such metals, and galvanized coatings in evaporative cooling water applications approaching zero liquid discharge that are specifically attacked by cooling water with residuals of corrosive chemistry or ions such as ammonia/ammonium ion, chloride, high TDS, OH | 10-30-2008 |
20090159420 | COOLING WATER CORROSION INHIBITION METHOD - Methods for inhibiting corrosion in aqueous evaporative systems where soluble silica (SiO | 06-25-2009 |
20100173071 | COOLING WATER CORROSION INHIBITION METHOD - A method of providing corrosion inhibition to copper, nickel, aluminum, zinc, tin, lead, beryllium, carbon steel, various alloys of such metals, and galvanized coatings in evaporative cooling water applications approaching zero liquid discharge that are specifically attacked by cooling water with residuals of corrosive chemistry or ions such as ammonia/ammonium ion, chloride, high TDS, OH | 07-08-2010 |
20120255908 | WATER CONSERVATION METHODS COMBINING OSMOTIC MEMBRANE PROCESSED WATER FOR SUBSEQUENT EFFICIENT USE IN COOLING TOWER APPLICATIONS - Synergies in recovery of reverse osmosis (RO) membrane process reject waste and forward osmosis (FO) membrane process water extraction, using such osmotic process byproducts in applications for makeup to evaporative cooling towers, concurrent with use of specific corrosion and scale inhibition methods that permit tower water discharge reduction to approach zero blowdown. Such synergies are derived from methods for application of subsequent RO feed water and reject wastewater with pre-treatment steps, and FO process optimization steps to permit water quality and economic performance efficiencies when used as makeup to evaporative cooling systems. | 10-11-2012 |
Patent application number | Description | Published |
20100040983 | Compensation of Process-Induced Displacement - A method of manufacturing integrated circuits includes determining a process-induced displacement (e.g., a stress-induced displacement) between primary structures on a substrate and providing a photomask with mask features assigned to the primary structures. The distances between the mask features are set such that the process-induced displacement is compensated. | 02-18-2010 |
20110027704 | Methods and Scatterometers, Lithographic Systems, and Lithographic Processing Cells - In a method of determining the focus of a lithographic apparatus used in a lithographic process on a substrate, the lithographic process is used to form a structure on the substrate, the structure having at least one feature which has an asymmetry in the printed profile which varies as a function of the focus of the lithographic apparatus on the substrate. A first image of the periodic structure is formed and detected while illuminating the structure with a first beam of radiation. The first image is formed using a first part of non-zero order diffracted radiation. A second image of the periodic structure is foamed and detected while illuminating the structure with a second beam of radiation. The second image is formed using a second part of the non-zero order diffracted radiation which is symmetrically opposite to the first part in a diffraction spectrum. The ratio of the intensities of the measured first and second portions of the spectra is determined and used to determine the asymmetry in the profile of the periodic structure and/or to provide an indication of the focus on the substrate. In the same instrument, an intensity variation across the detected portion is determined as a measure of process-induced variation across the structure. A region of the structure with unwanted process variation can be identified and excluded from a measurement of the structure. | 02-03-2011 |
20120013881 | Method and Apparatus for Determining an Overlay Error - A method of determining an overlay error. Measuring an overlay target having process-induced asymmetry. Constructing a model of the target. Modifying the model, e.g., by moving one of the structures to compensate for the asymmetry. Calculating an asymmetry-induced overlay error using the modified model. Determining an overlay error in a production target by subtracting the asymmetry-induced overlay error from a measured overlay error. In one example, the model is modified by varying asymmetry p | 01-19-2012 |
20140139814 | Methods and Scatterometers, Lithographic Systems, and Lithographic Processing Cells - In a method of determining the focus of a lithographic apparatus used in a lithographic process on a substrate, the lithographic process is used to form a structure on the substrate, the structure having at least one feature which has an asymmetry in the printed profile which varies as a function of the focus of the lithographic apparatus on the substrate. A first image of the periodic structure is formed and detected while illuminating the structure with a first beam of radiation. The first image is formed using a first part of non-zero order diffracted radiation. A second image of the periodic structure is formed and detected while illuminating the structure with a second beam of radiation. The second image is formed using a second part of the non-zero order diffracted radiation which is symmetrically opposite to the first part in a diffraction spectrum. The ratio of the intensities of the measured first and second portions of the spectra is determined and used to determine the asymmetry in the profile of the periodic structure and/or to provide an indication of the focus on the substrate. In the same instrument, an intensity variation across the detected portion is determined as a measure of process-induced variation across the structure. A region of the structure with unwanted process variation can be identified and excluded from a measurement of the structure. | 05-22-2014 |
Patent application number | Description | Published |
20120123581 | Metrology Method and Inspection Apparatus, Lithographic System and Device Manufacturing Method - Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The optical system has a first branch leading to a pupil plane imaging sensor and a second branch leading to a substrate plane imaging sensor. A spatial light modulator is arranged in an intermediate pupil plane of the second branch of the optical system. The SLM imparts a programmable pattern of attenuation that may be used to correct for asymmetries between the first and second modes of illumination or imaging. By use of specific target designs and machine-learning processes, the attenuation patterns may also be programmed to act as filter functions, enhancing sensitivity to specific parameters of interest, such as focus. | 05-17-2012 |
20130050501 | Metrology Method and Apparatus, and Device Manufacturing Method - A target structure including a periodic structure is formed on a substrate. An image of the target structure is detected while illuminating the target structure with a beam of radiation, the image being formed using a first part of non-zero order diffracted radiation while excluding zero order diffracted radiation. Intensity values extracted from a region of interest within the image are used to determine a property of the periodic structure. A processing unit recognizes locations of a plurality of boundary features in the image of the target structure to identify regions of interest. The number of boundary features in each direction is at least twice a number of boundaries of periodic structures within the target structure. The accuracy of locating the region is greater than by recognizing only the boundaries of the periodic structure(s). | 02-28-2013 |
20130059240 | Substrate and Patterning Device for Use in Metrology, Metrology Method and Device Manufacturing Method - A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets and small targets which are for measuring overlay. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas. | 03-07-2013 |
20130100427 | Metrology Method and Apparatus, and Device Manufacturing Method - An approach is used to estimate and correct the overlay variation as function of offset for each measurement. A target formed on a substrate includes periodic gratings. The substrate is illuminated with a circular spot on the substrate with a size larger than each grating. Radiation scattered by each grating is detected in a dark-field scatterometer to obtain measurement signals. The measurement signals are used to calculate overlay. The dependence (slope) of the overlay as a function of position in the illumination spot is determined. An estimated value of the overlay at a nominal position such as the illumination spot's center can be calculated, correcting for variation in the overlay as a function of the target's position in the illumination spot. This compensates for the effect of the position error in the wafer stage movement, and the resulting non-centered position of the target in the illumination spot. | 04-25-2013 |
20130148121 | Device Manufacturing Method and Associated Lithographic Apparatus, Inspection Apparatus, and Lithographic Processing Cell - Disclosed is a device manufacturing method, and accompanying inspection and lithographic apparatuses. The method comprises measuring on the substrate a property such as asymmetry of a first overlay marker and measuring on the substrate a property such as asymmetry of an alignment marker. In both cases the asymmetry is determined. The position of the alignment marker on the substrate is then determined using an alignment system and the asymmetry information of the alignment marker and the substrate aligned using this measured position. A second overlay marker is then printed on the substrate; and a lateral overlay measured on the substrate of the second overlay marker with respect to the first overlay marker using the determined asymmetry information of the first overlay marker. | 06-13-2013 |
20130230797 | Method of Applying a Pattern to a Substrate, Device Manufacturing Method and Lithographic Apparatus for Use in Such Methods - A substrate is loaded onto a substrate support of a lithographic apparatus, after which the apparatus measures locations of substrate alignment marks. These measurements define first correction information allowing the apparatus to apply a pattern at one or more desired locations on the substrate. Additional second correction information is used to enhance accuracy of pattern positioning, in particular to correct higher order distortions of a nominal alignment grid. The second correction information may be based on measurements of locations of alignment marks made when applying a previous pattern to the same substrate. The second correction information may alternatively or in addition be based on measurements made on similar substrates that have been patterned prior to the current substrate. | 09-05-2013 |
20140089870 | Inspection Method and Apparatus and Lithographic Processing Cell - A method of calculating process corrections for a lithographic tool, and associated apparatuses. The method comprises measuring process defect data on a substrate that has been previously exposed using the lithographic tool; fitting a process signature model to the measured process defect data, so as to obtain a model of the process signature for the lithographic tool; and using the process signature model to calculate the process corrections for the lithographic tool. | 03-27-2014 |
20140233031 | Substrate and Patterning Device for Use in Metrology, Metrology Method and Device Manufacturing Method - A pattern from a patterning device is applied to a substrate by a lithographic apparatus. The applied pattern includes product features and metrology targets. The metrology targets include large targets and small targets which are for measuring overlay. Some of the smaller targets are distributed at locations between the larger targets, while other small targets are placed at the same locations as a large target. By comparing values measured using a small target and large target at the same location, parameter values measured using all the small targets can be corrected for better accuracy. The large targets can be located primarily within scribe lanes while the small targets are distributed within product areas. | 08-21-2014 |
20150146188 | METHOD TO DETERMINE THE USEFULNESS OF ALIGNMENT MARKS TO CORRECT OVERLAY, AND A COMBINATION OF A LITHOGRAPHIC APPARATUS AND AN OVERLAY MEASUREMENT SYSTEM - A method to determine the usefulness of an alignment mark of a first pattern in transferring a second pattern to a substrate relative to the first pattern already present on the substrate includes measuring the position of the alignment mark, modeling the position of the alignment mark, determining the model error between measured and modeled position, measuring a corresponding overlay error between first and second pattern and comparing the model error with the overlay error to determine the usefulness of the alignment mark. Subsequently this information can be used when processing next substrates thereby improving the overlay for these substrates. A lithographic apparatus and/or overlay measurement system may be operated in accordance with the method. | 05-28-2015 |
20150153656 | Method of Applying a Pattern to a Substrate, Device Manufacturing Method and Lithographic Apparatus for Use in Such Methods - A substrate is loaded onto a substrate support of a lithographic apparatus, after which the apparatus measures locations of substrate alignment marks. These measurements define first correction information allowing the apparatus to apply a pattern at one or more desired locations on the substrate. Additional second correction information is used to enhance accuracy of pattern positioning, in particular to correct higher order distortions of a nominal alignment grid. The second correction information may be based on measurements of locations of alignment marks made when applying a previous pattern to the same substrate. The second correction information may alternatively or in addition be based on measurements made on similar substrates that have been patterned prior to the current substrate. | 06-04-2015 |
20160033877 | Metrology Method and Inspection Apparatus, Lithographic System and Device Manufacturing Method - Methods are disclosed for measuring target structures formed by a lithographic process on a substrate. A grating structure within the target is smaller than an illumination spot and field of view of a measurement optical system. The optical system has a first branch leading to a pupil plane imaging sensor and a second branch leading to a substrate plane imaging sensor. A spatial light modulator is arranged in an intermediate pupil plane of the second branch of the optical system. The SLM imparts a programmable pattern of attenuation that may be used to correct for asymmetries between the first and second modes of illumination or imaging. By use of specific target designs and machine-learning processes, the attenuation patterns may also be programmed to act as filter functions, enhancing sensitivity to specific parameters of interest, such as focus. | 02-04-2016 |