Patent application number | Description | Published |
20080273259 | MAGNETIC TAPE CARTRIDGE AND MAGNETIC RECORDING AND REPRODUCING APPARATUS - A magnetic tape cartridge includes a cartridge case, a pair of cylindrical hubs rotatably provided in the cartridge case, and a magnetic tape laid between the hubs and wound around outer peripheries of the hubs. Each of the hubs has an inner diameter portion provided with a height-position determining member. The height-position determining member determines a height position of the hub in the magnetic tape cartridge by contacting a driving shaft inserted in the hub when the magnetic tape cartridge is mounted in a magnetic recording and reproducing apparatus. | 11-06-2008 |
20090091856 | MAGNETIC RECORDING MEDIUM AND MAGNETIC RECORDING/REPRODUCING SYSTEM - A magnetic recording medium includes a tape-shaped nonmagnetic support, and a vertical magnetic layer formed on a main surface of the nonmagnetic support by a vacuum thin-film forming technique, signals being recorded on and reproduced from the vertical magnetic layer in a linear system. In the magnetic recording medium, the dipulse ratio of the vertical recording layer is 0.36 or more. | 04-09-2009 |
20110157087 | SENSOR APPARATUS AND INFORMATION PROCESSING APPARATUS - A sensor apparatus and an information processing apparatus having excellent operability are provided. A sensor apparatus includes a touch panel, a casing, and a pressure-sensitive sensor. The touch panel includes an input operation surface and detects a position at which an operator comes into contact with the input operation surface directly or indirectly. The casing accommodates the touch panel. The pressure-sensitive sensor includes a first electrode fixed to the touch panel, a second electrode fixed to the casing, and an elastic body arranged between the touch panel and the casing and elastically supporting the touch panel with respect to the casing. The pressure-sensitive sensor detects a pressing force input to the input operation surface, as a change of a capacitance between the first and second electrodes. | 06-30-2011 |
20110159186 | FILM FORMING APPARATUS AND FILM FORMING METHOD - The present invention provides a film forming apparatus and a film forming method realizing improvement in the degree of freedom in film formation while suppressing production cost. While conveying a base material by using a plurality of guide rolls, film formation is performed by atomic layer deposition by outputting precursor gases to the base material by a plurality of ALD heads. The ALD heads are disposed so as to individually face the guide rolls so that the precursor gases are locally output to the base material. The amount of the precursor gases used is reduced more than that in a related art, and the variety of kinds of the usable precursor gases is widened. | 06-30-2011 |
20110175845 | SENSOR APPARATUS AND ELECTRONIC APPARATUS - A sensor apparatus includes: a display cover including an operation area that is pressed by an operator and a circumferential area located on the circumference of the operation area; a frame including an opening covered by the operation area and a fixing portion that fixes the circumferential area; a touch panel that is supported by the display cover to be positioned at the opening and detects a position at which the operator comes into contact with the operation area; and a pressure-sensitive sensor that is provided between the display cover and the frame, includes a first electrode and a second electrode opposed to the first electrode, and detects a pressing force with respect to the operation area based on a change of a capacitance between the first electrode and the second electrode that corresponds to a deflection amount of the display cover. | 07-21-2011 |
20110181545 | SENSOR ELEMENT AND DISPLAY APPARATUS - A sensor element is provided that includes a flexible transparent base material, a first conductive pattern, and a second conductive pattern. The flexible transparent base material has a first surface and a second surface opposite to the first surface. The first conductive pattern is configured to electrostatically detect an operation position of an input operator in a first direction, the first conductive pattern being formed on the first surface. The second conductive pattern is configured to electrostatically detect an operation position of the input operator in a second direction different from the first direction, the second conductive pattern being formed on the second surface. | 07-28-2011 |
Patent application number | Description | Published |
20080222865 | PIEZOELECTRIC ELEMENT AND METHOD FOR MANUACTURING PIEZOELECTRIC ELEMENT - A piezoelectric element with a substrate, a first electrode film disposed on the substrate, a piezoelectric film disposed on the first electrode film, and a second electrode film disposed on the piezoelectric film, and a method of forming same. The piezoelectric film has a laminated structure composed of a plurality of crystallized piezoelectric thin films. The piezoelectric film has a predetermined thickness and is formed by repeated cycles of a film formation step of forming a piezoelectric thin film and a crystallization heat treatment step of heat-treating the piezoelectric thin film to effect crystallization. | 09-18-2008 |
20080257044 | Vibratory Gyrosensor - To improve characteristics by achieving size reduction and high Q value with a simple structure. A vibratory gyrosensor | 10-23-2008 |
20090174292 | VIBRATING GYROSENSOR - A vibrating gyrosensor includes a support substrate on which a wiring pattern having lands is formed. A vibrating element is mounted on a surface of the support substrate. The vibrating element includes a base part having a mounting surface on which a number of terminals connectable to the lands is formed. A vibrator part integrally projects from a side of the base part and has a substrate-facing surface coplanar with the mounting surface of the base part. The vibrator part has a first electrode layer, a piezoelectric layer, and a second electrode layer which are laminated on the substrate-facing surface. The vibrator part vibrates when an AC signal is applied between the first and second electrode layers. The central electric field strength of the AC signal is set at a position shifting to the positive direction from the center of a hysteresis loop of the piezoelectric layer. | 07-09-2009 |
20090320593 | VIBRATION TYPE GYRO SENSOR - A vibration type gyro sensor according to the present invention includes vibrating elements | 12-31-2009 |
20100000322 | ANGULAR VELOCITY SENSOR AND METHOD OF MANUFACTURING THE SAME - Disclosed is an angular velocity sensor. The angular velocity sensor includes a first layer, a piezoelectric layer, and a second layer. The first layer has a first main surface and a second main surface, and includes a vibrator portion and a base portion that supports the vibrator portion. The piezoelectric layer is formed on the first main surface of the first layer. The second layer is integrally bonded to the base portion on a side of the second main surface of the first layer. | 01-07-2010 |
20110146401 | ANGULAR VELOCITY SENSOR AND ELECTRONIC APPARATUS - Provided is an angular velocity sensor including a first vibration element, a second vibration element, and a support substrate. The first vibration element detects a first angular velocity about an axis parallel to a first direction. The second vibration element detects a second angular velocity about an axis parallel to a second direction obliquely intersecting with the first direction, and generates an output signal corresponding to a third angular velocity about an axis parallel to a third direction orthogonal to the first direction. The support substrate supports the first vibration element and the second vibration element. | 06-23-2011 |
20110296914 | ANGULAR VELOCITY SENSOR, ELECTRONIC APPARATUS, AND METHOD OF DETECTING AN ANGULAR VELOCITY - An angular velocity sensor includes an annular frame, a drive part, and a detection part. The frame has first beams and second beams. The first beams extend in an a-axis direction and are opposed to each other in a b-axis direction orthogonal to the a-axis direction. The second beams extend in the b-axis direction and are opposed to each other in the a-axis direction. The drive part causes the frame to oscillate within an XY plane to which the a-axis and the b-axis belong, in an oscillation mode where, when one of the first and second beams come closer to each other, the other separates from each other. The detection part detects an angular velocity around an axis in the Z-axis direction orthogonal to the XY plane, based on an amount of deformation of the frame oscillating in the oscillation mode within the XY plane. | 12-08-2011 |
20120216613 | ANGULAR VELOCITY SENSOR - An angular velocity sensor includes: a frame including a pair of first beams extending in a first direction and opposed to each other in a second direction orthogonal to the first direction, a pair of second beams extending in the second direction and opposed to each other in the first direction, and connections between those pairs; a drive unit that vibrates the frame in a first plane, to which the first and second directions belong, in a vibration mode in which when one pair of those pairs move closer to each other, the other move away from each other, and vice versa; a first detector that detects, based on the amount of deformation of the frame in the first plane, an angular velocity around an axis of a third direction orthogonal to the first plane; and a support mechanism including a base portion and joint portions. | 08-30-2012 |
20140373629 | ANGULAR VELOCITY SENSOR - An angular velocity sensor includes: a frame including a pair of first beams extending in a first direction and opposed to each other in a second direction orthogonal to the first direction, a pair of second beams extending in the second direction and opposed to each other in the first direction, and connections between those pairs; a drive unit that vibrates the frame in a first plane, to which the first and second directions belong, in a vibration mode in which when one pair of those pairs move closer to each other, the other move away from each other, and vice versa; a first detector that detects, based on the amount of deformation of the frame in the first plane, an angular velocity around an axis of a third direction orthogonal to the first plane; and a support mechanism including a base portion and joint portions. | 12-25-2014 |
Patent application number | Description | Published |
20130267094 | PLASMA ETCHING METHOD AND PLASMA PROCESSING APPARATUS - A plasma etching method for plasma etching, in a processing chamber, an antireflection film laminated on an organic film formed on a substrate by using an etching mask made of a resist film formed on the antireflection film, the plasma etching method includes: depositing a Si-containing compound on the etching mask made of the resist film by using plasma of Si-containing gas in the processing chamber; and etching the antireflection film in a state where the Si-containing compound is deposited on the etching mask. | 10-10-2013 |
20140134848 | PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS - Disclosed is a plasma etching method which suppresses the narrowing of the line-width of the line formed by etching and maintain the height of a remaining photoresist. The plasma etching method includes a modification process and an etching process. The modification process modifies a photoresist having a predetermined pattern by plasma of HBr/Ar gas while applying a negative DC voltage to an upper electrode containing silicon disposed to face a target object in which an organic film and the photoresist are sequentially laminated. The etching process etches the organic film by plasma of a processing gas which contains a CF-based gas and a CHF-based gas. | 05-15-2014 |
20140193977 | PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS - A plasma etching apparatus includes a processing chamber; a holding unit for holding the substrate within the processing chamber; an electrode plate facing the holding unit; a plurality of supply parts arranged at different radial positions with respect to the substrate for supplying processing gas to a space between the holding unit and the electrode plate; a high frequency power supply that supplies high frequency power to the holding unit and/or the electrode plate to convert the processing gas supplied to the space into plasma; an adjustment unit that adjusts a supply condition for each of the supply parts; and a control unit that controls the adjustment unit to vary the supply condition between a position where an effect of diffusion of processing gas on an active species concentration distribution at the substrate is dominant and a position where an effect of flow of the processing gas is dominant. | 07-10-2014 |
20140234992 | PLASMA ETCHING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A plasma etching method is provided for etching a substrate corresponding to an etching object within an etching apparatus that includes a supply condition adjustment unit for adjusting a supply condition for supplying etching gas to the substrate, a temperature adjustment unit for adjusting a temperature of the substrate placed on a stage along a radial direction, and a plasma generating unit for generating plasma within a space between the supply condition adjustment unit and the stage. The plasma etching method includes a control step in which the temperature adjustment unit controls the temperature of the substrate to be uniform within a substrate plane of the substrate, and an adjustment step in which the supply condition adjustment unit adjusts a concentration distribution of active species contained in the plasma generated by the plasma generation unit within the space above the substrate. | 08-21-2014 |
20140273486 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device including a wafer using a plasma etching device which includes a chamber, a chuck provided in the chamber to dispose a wafer to be processed thereon, a focus ring disposed at a peripheral edge portion of the chuck, and a gas supplying mechanism configured to supply various types of gases depending a radial position of the wafer. The method includes: placing a wafer formed with an organic film on the chuck; introducing an etching gas which etches the organic film on the wafer from the process gas supplying mechanism to a central portion of the wafer; introducing an etching inhibiting factor gas having a property of reacting with the etching gas to the peripheral edge portion of the wafer from the gas supplying mechanism; and performing plasma etching on the wafer using the etching gas. | 09-18-2014 |
20140363980 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device manufacturing method is provided that includes etching with a plasma a multilayer film including a first film and a second film with differing dielectric constants alternately stacked on a substrate using a photoresist layer arranged on the multilayer film as a mask, and forming the multilayer film into a stepped configuration. The semiconductor device manufacturing method includes repetitively performing a first step of etching the first film using the photoresist layer as the mask; a second step of adjusting a pressure within a processing chamber to 6-30 Torr, generating the plasma by applying a first high frequency power for biasing and a second high frequency power for plasma generation to the lower electrode, and etching the photoresist layer using the generated plasma; and a third step of etching the second film using the photoresist layer and the first film as the mask. | 12-11-2014 |