Patent application number | Description | Published |
20090072425 | Low-dusting investment composition material - A method for manufacturing a heat-resistant mold for manufacturing a dental restoration, wherein a wax model is manufactured in a conventional manner and wherein from a powdered heat-resistant material consisting of powdered particles coated with a hydrophobic material liquid at room temperature, with water or another mixing liquid, a slurry is prepared, wherein the slurry is applied to the wax model, and wherein the wax model covered slurry is subjected to a heating step, wherein the wax is burnt off. | 03-19-2009 |
20110012286 | LOW-DUSTING INVESTMENT COMPOSITION MATERIAL - A method for manufacturing a heat-resistant mold for manufacturing a dental restoration, wherein a wax model is manufactured in a conventional manner and wherein from a powdered heat-resistant material consisting of powdered particles coated with a hydrophobic material liquid at room temperature, with water or another mixing liquid, a slurry is prepared, wherein the slurry is applied to the wax model, and wherein the wax model covered slurry is subjected to a heating step, wherein the wax is burnt off. | 01-20-2011 |
20130341824 | LOW-DUSTING INVESTMENT COMPOSITION MATERIAL - A method for manufacturing a heat-resistant mold for manufacturing a dental restoration, wherein a wax model is manufactured in a conventional manner and wherein from a powdered heat-resistant material consisting of powdered particles coated with a hydrophobic material liquid at room temperature, with water or another mixing liquid, a slurry is prepared, wherein the slurry is applied to the wax model, and wherein the wax model covered slurry is subjected to a heating step, wherein the wax is burnt off. | 12-26-2013 |
Patent application number | Description | Published |
20100264319 | Intelligent Sensor Platform - A radiation detection apparatus that utilizes a radiation sensor device that includes a scintillator device that is optically coupled to a plurality of silicon drift detector devices. Each silicon drift detector device segment includes an output anode that supplies the segment output to dedicated sensor processing circuitry. With each anode having dedicated processing circuitry, each output can be processed simultaneously. Also provided is a spectroscopic analysis device that is coupled with the sensor processing circuitry for computing spectral data associated with the radiation detection event. The spectroscopic analysis device accurately characterizes the detected radionuclide and prepares the results for display before the user. Networking capabilities also allow multiples of such apparatuses to communicate in an intelligent grid, providing even greater radionuclide characterization capabilities. | 10-21-2010 |
20100264506 | Light-Tight Silicon Radiation Detector - A light-tight silicon detector. The detector utilizes a silicon substrate having a sensitive volume for the detection of ionizing radiation and a rectifying contact or electrode through which the ionizing radiation may enter. A diffused or boron-implanted p+ layer may act at the rectifying electrode. A first layer of titanium nitride is deposited on the entrance window to prevent light from being admitted to the sensitive volume and to increase the abrasion and corrosion resistance of the detector. Alternatively a titanium nitride layer may be deposited directly on the silicon substrate, said layer acting as a surface barrier or Schottky barrier rectifying contact. A layer of titanium nitride may be deposited on the backside contact wherein this titanium nitride layer serves as an ohmic contact. The second layer may be further utilized as a conductive contact for surface mount connections. | 10-21-2010 |
20110012216 | Simplified Silicon Drift Detector and Wraparound Neutron Detector - A large area SDD detector having linear anodes surrounded by steering electrodes and having an oblong, circular, hexagonal, or rectangular shape. The detectors feature stop rings having a junction on the irradiation side and an ohmic contact on the anode side and/or irradiation side. The irradiation and anode stop ring biasing configuration influences the leakage current flowing to the anode and, hence, the overall efficiency of the active area of the detector. A gettering process is also described for creation of the disclosed SDD detectors. The SDD detector may utilize a segmented configuration having multiple anode segments and kick electrodes for reduction of the detector's surface electric field. In another embodiment, a number of strip-like anodes are linked together to form an interdigitated SDD detector for use with neutron detection. Further described is a wraparound structure for use with Ge detectors to minimize capacitance. | 01-20-2011 |