Kamikubo
Hiroshi Kamikubo, Kanagawa JP
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20120315957 | ELECTRONIC DEVICE, AND CONTROL METHOD AND STORAGE MEDIUM STORING CONTROL PROGRAM - There is provided an electronic device that can execute a function using characters inputted during a telephone call, and a control method and a control program thereof. An application control unit inputs a character as an input character using an input control unit in a state where a call with a predetermined communication counterpart is continuing using a communication unit. When a predetermined function is selected after the input character is inputted with the input control unit, the application control unit executes a predetermined function in a state where the input character is inputted. | 12-13-2012 |
Maki Kamikubo, Yokosuka-Shi JP
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20080282683 | DEVICE FOR THE PURIFICATION OF EXHAUST GAS - As a device for the purification of exhaust gas, a three-way catalyst A purifying hydrocarbon, carbon monoxide and nitrogen oxide in the vicinity of theoretical air-fuel ratio is disposed at an upstream side of the exhaust gas and an adsorption catalyst B provided with zeolite effective for the adsorption of hydrocarbon is disposed at a downstream side of the exhaust gas. | 11-20-2008 |
Noritaka Kamikubo, Hiroshima JP
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20090045519 | Semiconductor Device and Method of Producing the Same - In one embodiment of the present invention, a process is disclosed for producing a semiconductor device that can suppress the diffusion of an electrically conductive metal into an insulating film. The process for producing a semiconductor device is characterized by including the steps of (1) forming a groove in an insulating film provided on a semiconductor substrate, (2) forming a barrier film on the inner face of the groove and on the insulating film, (3) forming an electrically conductive metal layer on the barrier film so as to fill the groove, (4) removing the electrically conductive metal layer and barrier film on the insulating film and a part of the electrically conductive metal layer within the groove so that the surface of the electrically conductive metal layer is lower than the surface of the insulating film, (5) forming a metal diffusion preventive film on the insulating film and the electrically conductive metal layer, and (6) removing the metal diffusion preventive film on the insulating film and a part of the insulating film so that at least a part of the metal diffusion preventive film on the electrically conductive metal layer remains unremoved. | 02-19-2009 |
Noritaka Kamikubo, Osaka JP
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20100035438 | Method for manufacturing semiconductor device, and polishing apparatus - An interlayer insulating film is formed on a semiconductor substrate having a semiconductor element formed thereon. At this time, there are protrusions higher than surroundings thereof and non-protruding portions lower than the protrusions on the surface of the interlayer insulating film. First, a first polishing process is carried out on the surface of the interlayer insulating film with use of a first abrasive having non-Prestonian properties produced by mixing abrasive materials including abrasive grains, a polymer additive and water at a predetermined first mixture ratio. Then, after the first abrasive process shifts to an automatically stopping state, a second polishing process is carried out on the surface of the interlayer insulating film with use of a second abrasive having the concentration of polymer additive lower than that of the first abrasive and produced by mixing the abrasive materials at a second mixture ratio different from the first mixture ratio. | 02-11-2010 |
20110114951 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - Disclosed is a semiconductor device fabrication method that comprises a fabrication process, wherein device structural patients are formed in a device formation area inside a chip formation area and wherein inspection patterns are formed in multiple inspection areas inside the aforementioned chip formation area, on the film-side of a semiconductor wafer that has a film for pattern formation, and an inspection process. The aforementioned inspection patterns have a repeating pattern with identical lines and identical spaces formed in a first inspection area among the aforementioned multiple inspection areas, and a uniform pattern without spaces formed in a second inspection area among the multiple inspection areas. The aforementioned inspection process has at least a pattern inspection process that comprises a first inspection, which uses an optical measurement method capable of measuring three-dimensional pattern shapes to measure the parameters of the repeating pattern in the aforementioned first inspection area in the direction of repetition in which the lines and spaces are repeated, and a second inspection, which uses an optical measurement method capable of measuring film thickness to measure the thickness of the uniform pattern in the aforementioned second inspection area. | 05-19-2011 |
Takashi Kamikubo, Yokohama-Shi JP
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20160056046 | METHOD OF PRODUCING APERTURE MEMBER - In one embodiment, an aperture member producing method includes applying a charged particle beam to a plurality of chip areas on a first substrate while changing a writing condition to write a first pattern corresponding to an aperture opening, processing the first substrate based on the written first pattern to form a second pattern, cutting out a chip area provided with the second pattern having desired accuracy from the first substrate to produce a template, allowing the template to come into contact with a resist overlying a front surface of a second substrate, separating the template from the hardened resist to pattern the resist with a transfer pattern, processing the second substrate using the transfer pattern as a mask to form a first recess, and etching a rear surface of the second substrate to form a second recess communicating with the first recess. | 02-25-2016 |
Takashi Kamikubo, Kanagawa JP
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20100178611 | Lithography method of electron beam - A charged particle beam writing method on a chemical amplification type resist, comprising: coating said chemical amplification type resist which contains an acid diffusion inhibitor, on a surface of a mask substrate, exposing charged particle beams to said chemical amplification type resist layer on said surface of the mask substrate, baking said chemical amplification type resist layer which said charged particle beams were exposed, and developing said chemical amplification type resist after the baking, wherein an exposure current density of said electron beams exposing ranges of 50 | 07-15-2010 |
Takashi Kamikubo, Numazu-Shi JP
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20090075185 | MASK BLANK AND METHOD OF MANUFACTURING MASK - A mask blank is formed on a transparent substrate with a light-shielding film of a material mainly containing chromium and is used for obtaining a photomask by forming the light-shielding film into a transfer pattern by lithography using an electron beam writing resist. The mask blank includes a mask layer formed on the light-shielding film for serving as an etching mask in etching that forms the light-shielding film into the transfer pattern. The mask layer is made of a material containing silicon. The mask blank further includes a chromium nitride-based film formed on the mask layer and containing at least chromium and nitrogen. | 03-19-2009 |
Toshitaka Kamikubo, Okazaki-Shi JP
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20110038680 | TOOL HOLDER FIXING STRUCTURE - A tool holder fixing structure is arranged to fix a tool holder for holding a tool attached with a throwaway tip to a tool-holder holding part of a machine tool so that a foreign-matter receiving clearance is provided between the tool holder and the tool-holder holding part. The foreign-matter receiving clearance is defined in a range of +30° to −30° from a cutting-edge position of the throwaway tip assumed as an original point and in a range of 150° to 210° from the original point, respectively. | 02-17-2011 |