Patent application number | Description | Published |
20090130860 | Method of manufacturing a semiconductor device and processing apparatus - To remove the deposit including a high dielectric constant film deposited on an inside of a processing chamber, by using a cleaning gas activated only by heat. The method includes the steps of: loading a substrate or a plurality of substrates into the processing chamber; performing processing to deposit the high dielectric constant film on the substrate by supplying processing gas into the processing chamber; unloading the processed substrate from the inside of the processing chamber; and cleaning the inside of the processing chamber by supplying a halide gas and an oxygen based gas into the processing chamber, and removing the deposit including the high dielectric constant film deposited on the inside of the processing chamber, and in the step of cleaning the inside of the processing chamber, the concentration of the oxygen based gas in the halide gas and the oxygen based gas is set to be less than 7%. | 05-21-2009 |
20090197424 | Substrate processing apparatus and method for manufacturing semiconductor device - A substrate processing apparatus according to the present invention promotes supplying gases to spaces between adjacent substrates without reducing the number of substrates which can be collectively processed. The substrate processing apparatus includes: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; at least one processing gas supply nozzle which extends running along an inner wall of the processing chamber in the stacking direction of the substrates and supplies a processing gas to the inside of the processing chamber; a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich the processing gas supply nozzle from both sides thereof along the circumferential direction of the substrates and which supply the inactive gas to the inside of the processing chamber; and an exhaust line for exhausting the inside of the processing chamber. | 08-06-2009 |
20100009079 | Method for processing substrate and substrate processing apparatus - There is provided a substrate processing method, comprising the steps of: supplying source gas into a processing chamber in which substrates are accommodated; removing the source gas and an intermediate body of the source gas remained in the processing chamber; supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and removing the ozone and the intermediate body of the ozone remained in the processing chamber; with these steps repeated multiple number of times, to thereby form an oxide film on the surface of the substrates by supplying the source gas and the ozone alternately so as not to be mixed with each other. | 01-14-2010 |
20100035437 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Substrate processing uniformity is improved in the surfaces of wafers and between the wafers. A substrate processing apparatus includes a substrate holder holding horizontally oriented and stacked substrates, an inner tube accommodating the substrate holder, an outer tube enclosing the inner tube, a gas nozzle installed in the inner tube, a gas injection hole formed in the gas nozzle, a source gas supply unit supplying source gas to an inside of the inner tube through the gas nozzle, a gas exhaust outlet formed in a sidewall of the inner tube, an exhaust unit exhausting a gap between the outer tube and the inner tube to create a gas stream inside the inner tube from the gas injection hole to the gas exhaust outlet, and a gas penetration preventing cylinder enclosing a region of the substrate holder lower than a region of the substrate holder where the substrates are stacked. | 02-11-2010 |
20100162952 | Substrate processing apparatus - Disclosed is a substrate processing apparatus, including a reaction tube to process a substrate therein, wherein the reaction tube includes an outer tube, an inner tube disposed inside the outer tube, and a support section to support the inner tube, the inner tube and the support section are made of quartz or silicon carbide, and a shock-absorbing member is provided between the support section and the inner tube. | 07-01-2010 |
20110024875 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING APPARATUS - A high-k capacitor insulating film stable at a higher temperature is formed. There is provided a method of manufacturing a semiconductor device. The method comprises: forming an amorphous first insulating film comprising a first element on a substrate; adding a second element different from the first element to the first insulating film so as to form an amorphous second insulating film on the substrate; and annealing the second insulating film at a predetermined annealing temperature so as to form a third insulating film by changing a phase of the second insulating film. The concentration of the second element added to the first insulating film is controlled according to the annealing temperature. | 02-03-2011 |
20120079985 | METHOD FOR PROCESSING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS - There is provided a substrate processing method, comprising the steps of: supplying source gas into a processing chamber in which substrates are accommodated; removing the source gas and an intermediate body of the source gas remained in the processing chamber; supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and removing the ozone and the intermediate body of the ozone remained in the processing chamber; with these steps repeated multiple number of times, to thereby form an oxide film on the surface of the substrates by supplying the source gas and the ozone alternately so as not to be mixed with each other. | 04-05-2012 |
20120122318 | SUBSTRATE PROCESSING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - The substrate processing apparatus includes: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; at least one processing gas supply nozzle which extends running along an inner wall of the processing chamber in the stacking direction of the substrates and supplies a processing gas to the inside of the processing chamber; a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich the processing gas supply nozzle from both sides thereof along the circumferential direction of the substrates and which supply the inactive gas to the inside of the processing chamber; and an exhaust line for exhausting the inside of the processing chamber. | 05-17-2012 |
20120280369 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND SEMICONDUCTOR DEVICE - There is provided a method for manufacturing a semiconductor device, comprising simultaneously or alternately exposing a substrate, which has two or more kinds of thin films having different elemental components laminated or exposed; and performing different modification treatments to the thin films respectively. | 11-08-2012 |
20120319252 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes performing a cycle a predetermined number of times to form a film on a substrate. The cycle includes feeding a first material containing a first element, to be adsorbed on a substrate surface, to a processing chamber where the substrate is accommodated; feeding a second material containing a second element, adsorbed on the substrate surface, to the processing chamber after the adsorption of the first material; feeding a third material containing a third element to the processing chamber, so that the substrate surface is modified; and removing an atmosphere in the processing chamber. A content of the second element in the film is controlled by adjusting an adsorption quantity of the first material and an adsorption quantity of the second material with respect to a saturated adsorption quantity of the first material adsorbed on the substrate surface. | 12-20-2012 |
20130122720 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A high-k capacitor insulating film stable at a higher temperature is formed. There is provided a method of manufacturing a semiconductor device. The method comprises: forming a first amorphous insulating film comprising a first element on a substrate; adding a second element different from the first element to the first amorphous insulating film so as to form a second amorphous insulating film on the substrate; and annealing the second amorphous insulating film at a predetermined annealing temperature so as to form a third insulating film by changing a phase of the second amorphous insulating film. The concentration of the second element added to the first amorphous insulating film is controlled according to the annealing temperature. | 05-16-2013 |
20130298947 | SUBSTRATE PROCESSING SYSTEM - Disclosed is a substrate processing system, including: | 11-14-2013 |
20140182515 | SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND VAPORIZATION SYSTEM - A substrate processing apparatus includes: a processing chamber configured to accommodate a substrate; a vaporized gas supply system which includes a vaporizer to vaporize a liquid precursor into a vaporized gas and is configured to supply the vaporized gas into the processing chamber; and a control unit configured to control the vaporized gas supply system to supply a liquid precursor and a carrier gas into a vaporization chamber formed in the vaporizer such that a ratio of a partial pressure of the liquid precursor to a total pressure in the vaporization chamber is equal to or lower than 20%. | 07-03-2014 |
Patent application number | Description | Published |
20080302302 | Substrate Processing System - Disclosed is a substrate processing system, including: a processing chamber to process a substrate; a vaporizing unit to vaporize a material of liquid; a supply system to supply the processing chamber with gas of the material vaporized by the vaporizing unit; an exhaust system to exhaust an atmosphere in the processing chamber; and a cleaning liquid supply system to supply the vaporizing unit with cleaning liquid for cleaning a product deposited in the vaporizing unit, wherein the cleaning liquid supply system supplies at least two kinds of cleaning liquids into the vaporizing unit so that the product can be removed from the vaporizing unit by action of the two kinds of cleaning liquids on the product. | 12-11-2008 |
20100186774 | CLEANING METHOD AND SUBSTRATE PROCESSING APPARATUS - Provided is a cleaning method for removing a film adhered inside a processing chamber of a substrate processing apparatus used for forming a desired film on a substrate by supplying a material gas for film formation. The method is provided with a step of supplying a halogen containing gas into the processing chamber, and a step of supplying a fluorine containing gas into the processing chamber while supplying the halogen containing gas, after starting to supply the halogen containing gas. In the step of supplying the fluorine containing gas, a supply flow volume ratio of the halogen containing gas to the entire gas supplied into the processing chamber is within a range of 20-25%. | 07-29-2010 |
20130260566 | Method of Manufacturing Semiconductor Device, Cleaning Method, Substrate Processing Apparatus and Non-Transitory Computer Readable Recording Medium - Provided is a method of manufacturing a semiconductor device, which efficiently removes a high permittivity film (high-k film). The method of manufacturing a semiconductor device includes: (a) supplying a processing gas containing an organic compound into a process chamber to form a predetermined film on a substrate; (b) supplying a first cleaning gas into the process chamber with the substrate being unloaded from the process chamber to remove films adhered to an inner wall of a reaction tube defining the process chamber and members disposed in the process chamber; (c) supplying a modifying gas into the process chamber after performing (b) to modify a carbon-containing film remaining in a nozzle of the members configured to supply the processing gas; and (d) supplying a second cleaning gas into the process chamber to remove a film obtained by modifying the carbon-containing film in (c). | 10-03-2013 |
20140166145 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Substrate processing uniformity is improved in the surfaces of wafers and between the wafers. An inner tube for a substrate processing apparatus for forming a high-k film, includes: a gas exhaust outlet formed at a sidewall of the inner tube; and a gas injection hole located at position spaced outward from the sidewall of the inner tube, wherein a distance of an outer edge of a substrate accommodated in the inner tube and the gas exhaust outlet is greater than a distance between the outer edge of the substrate accommodated in the inner tube and the gas injection hole. | 06-19-2014 |
20140170860 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Substrate processing uniformity is improved in the surfaces of wafers and between the wafers. A method of manufacturing a semiconductor device, including: loading a substrate holder into an inner tube, the substrate holder holding a plurality of substrates in a state where the plurality of substrates are horizontally oriented and stacked; forming thin films on the plurality of substrates by supplying a source gas to an inside of the inner tube; and unloading the substrate holder from the inner tube, wherein the forming the thin films is performed in a state where a conductance of a space between an inner wall of the inner tube and a gas penetration preventing cylinder is smaller than a conductance of a region where the plurality of substrates are stacked. | 06-19-2014 |