Patent application number | Description | Published |
20100035093 | ULTRACAPACITORS AND METHODS OF MAKING AND USING - An electrochemical device comprising a chemically modified graphene material is disclosed. An ultracapacitor comprising a chemically modified graphene material is disclosed, along either with a method of making an ultracapacitor, the method comprising forming two electrodes, wherein at least one of the two electrodes comprises a graphene material, and positioning each of the two electrodes such that each is in contact with an opposing side of a separator and a current collector | 02-11-2010 |
20100176351 | MIXTURES COMPRISING GRAPHITE AND GRAPHENE MATERIALS AND PRODUCTS AND USES THEREOF - Disclosed are compositions comprising suspensions of graphite and/or graphene materials in a liquid, for example, comprising water, a first organic solvent, and optionally a second organic solvent. Also disclosed are methods of making and using the compositions. | 07-15-2010 |
20100203340 | PROTECTIVE CARBON COATINGS - Disclosed is a method for forming a protective coating comprising contacting a carbon material with a metal surface, heating the carbon material and metal to allow at least a portion of the carbon material to dissolve in the metal, diffuse across a portion of the metal surface, or a combination thereof, and then cooling the metal and carbon material to form a metal having a protecting carbon coating disposed on a surface thereof, wherein the protective coating comprises graphene, multi-layer graphene, or a combination thereof. Also disclosed are a method for inhibiting corrosion comprising forming a layer of graphene on at least a portion of a metal surface; a metal having a surface, wherein at least a portion of the surface comprises a protective carbon coating comprising graphene, multi-layer graphene, or a combination thereof; and a passivation coating comprising a graphene, multi-layer graphene, or a combination thereof. | 08-12-2010 |
20100224851 | SYNTHESIZING GRAPHENE FROM METAL-CARBON SOLUTIONS USING ION IMPLANTATION - A method and semiconductor device for synthesizing graphene using ion implantation of carbon. Carbon is implanted in a metal using ion implantation. After the carbon is distributed in the metal, the metal is annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the surface of the metal. The metal/graphene surface is then transferred to a dielectric layer in such a manner that the graphene layer is placed on top of the dielectric layer. The metal layer is then removed. Alternatively, recessed regions are patterned and etched in a dielectric layer located on a substrate. Metal is later formed in these recessed regions. Carbon is then implanted into the metal using ion implantation. The metal may then be annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the metal's surface. | 09-09-2010 |
20110079748 | Exfoliation of Graphite Oxide in Propylene Carbonate and Thermal Reduction of Resulting Graphene Oxide Platelets - Disclosed are compositions and methods wherein graphite oxide was exfoliated and dispersed in propylene carbonate (PC) by bath sonication. Heating the graphene oxide suspensions at 150° C. significantly reduced the graphene oxide platelets; paper samples comprised of such reduced graphene oxide platelets had an electrical conductivity of 5230 S/m. By adding TEA BF | 04-07-2011 |
20110080689 | Ionic Liquids for Use in Ultracapacitor and Graphene-Based Ultracapacitor - One embodiment of the current disclosure provides an ultracapacitor including at least one graphene-based electrode, an electrolyte containing an ionic liquid, and a dielectric separator dividing the ultracapacitor into two chambers, each chamber containing an electrode and a portion of the electrolyte. In another embodiment, the graphene has been expanded by exposure to microwave radiation then chemically activated. Another embodiment of the current disclosure provides an electrochemical energy storage device containing such an ultracapacitor. Still other embodiments of the disclosure relate to ionic liquids, some of which may be suitable for use in an ultracapacitor, methods of synthesizing such liquids, and methods of designing such liquids. Further embodiments relate to methods of using ultracapacitors, for example in automobiles, power grids, high-temperature applications, and other applications. | 04-07-2011 |
20110091647 | GRAPHENE SYNTHESIS BY CHEMICAL VAPOR DEPOSITION - Processes for synthesizing graphene films. Graphene films may be synthesized by heating a metal or a dielectric on a substrate to a temperature between 400° C. and 1,400° C. The metal or dielectric is exposed to an organic compound thereby growing graphene from the organic compound on the metal or dielectric. The metal or dielectric is later cooled to room temperature. As a result of the above process, standalone graphene films may be synthesized with properties equivalent to exfoliated graphene from natural graphite that is scalable to size far greater than that available on silicon carbide, single crystal silicon substrates or from natural graphite. | 04-21-2011 |
20110227000 | ELECTROPHORETIC DEPOSITION AND REDUCTION OF GRAPHENE OXIDE TO MAKE GRAPHENE FILM COATINGS AND ELECTRODE STRUCTURES - Disclosed are methods for preparing electrophoretically deposited graphene based films. | 09-22-2011 |
20130026444 | SYNTHESIZING GRAPHENE FROM METAL-CARBON SOLUTIONS USING ION IMPLANTATION - A method and semiconductor device for synthesizing graphene using ion implantation of carbon. Carbon is implanted in a metal using ion implantation. After the carbon is distributed in the metal, the metal is annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the surface of the metal. The metal/graphene surface is then transferred to a dielectric layer in such a manner that the graphene layer is placed on top of the dielectric layer. The metal layer is then removed. Alternatively, recessed regions are patterned and etched in a dielectric layer located on a substrate. Metal is later formed in these recessed regions. Carbon is then implanted into the metal using ion implantation. The metal may then be annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the metal's surface. | 01-31-2013 |
20130235509 | ULTRACAPACITOR WITH A NOVEL CARBON - Disclosed is a carbon material that can be useful, for example, in ultracapacitors. Also disclosed are applications and devices containing the carbon material. | 09-12-2013 |
20140313562 | GRAPHENE/METAL NANOWIRE HYBRID TRANSPARENT CONDUCTIVE FILMS - A hybrid transparent conductive film, and methods for fabricating such hybrid transparent conductive films, involving the assembly of two-dimensional graphene-based materials with one-dimensional silver and/or copper nanowires with high optical transmittance and good electrical conductivity. The hybrid films are characterized by a good degree of control of the architecture at the nanoscale level, where the weakness(es) of each component are offset by the strengths of the other components. By rational design of the structure and using simple and locate-cost fabrication methods, hybrid films with sheet resistance of 26 ohm/sq and optical transmittance (at λ=550 nm) of 83% for reduced graphene oxide/silver nanowire films, and 64 ohm/sq and optical transmittance of 93.6% for monolayer graphene/silver nanowire films have been fabricated. These values are comparable to transparent conductive films based on indium tin oxide but are now able to be used in flexible electronics due to their good mechanical properties. | 10-23-2014 |
20150050482 | GRAPHENE SYNTHESIS BY SUPPRESSING EVAPORATIVE SUBSTRATE LOSS DURING LOW PRESSURE CHEMICAL VAPOR DEPOSITION - Method for synthesizing large single-crystal graphene films by suppressing evaporative substrate loss in chemical vapor deposition, and graphene films synthesized thereby. The substrate may be configured as a tube prior to exposure to an organic compound at high temperature. Low flow rate of the gaseous carbon source may be employed, and this flow rate may be increased after an initial nucleation period. | 02-19-2015 |
20150292112 | METHODS OF FORMING GRAPHENE SINGLE CRYSTAL DOMAINS - A method of forming graphene single crystal domains on a carbon substrate is described. | 10-15-2015 |