Patent application number | Description | Published |
20090051011 | Semiconductor device having seal ring structure and method of forming the same - A semiconductor device of the present invention includes a seal ring structure. The seal ring structure includes a first metal layer including a though hole, the through hole having a bottom portion filled with an insulating material, and a second metal layer formed on the first metal layer. The second metal layer has a projected portion projecting from a bottom of the second metal layer and the projected portion is inserted into a top portion of the through hole. | 02-26-2009 |
20100032845 | SEMICONDUCTOR DEVICE HAVING AN INTERCONNECT STRUCTURE AND A REINFORCING INSULATING FILM AND METHOD OF MANUFACTURING SUCH DEVICE - A semiconductor device includes in an interconnect structure which includes a first interconnect made of a copper-containing metal, a first Cu silicide layer covering the upper portion of the first interconnect, a conductive first plug provided on the upper portion of the Cu silicide layer and connected to the first interconnect, a Cu silicide layer covering the upper portion of the first plug, a first porous MSQ film provided over the side wall from the first interconnect through the first plug and formed to cover the side wall of the first interconnect, the upper portion of the first interconnect, and the side wall of the first plug, and a first SiCN film disposed under the first porous MSQ film to contact with the lower portion of the side wall of the first interconnect and having the greater film density than the first porous MSQ film. | 02-11-2010 |
20100117234 | Semiconductor device and method of manufacturing the same - A method includes burying a conductive pattern in an insulating film made of SiOH, SiCOH or organic polymer, treating surfaces of the insulating film and the conductive pattern with plasma which includes a hydrocarbon gas as a treatment gas, and forming a diffusion barrier film, which is formed of an SiCH film, an SiCHN film, an SiCHO film or an SiCHON film, over the insulating film and the conductive pattern with performing a plasma CVD by adding an Si-containing gas to the treatment gas while increasing an addition amount gradually or in a step by step manner. | 05-13-2010 |
20100270677 | Semiconductor device and method of manufacturing semiconductor device - An interconnect is provided in a first insulating layer and the upper surface of the interconnect is higher than the upper surface of the first insulating layer. An air gap is disposed between the interconnect and the first insulating layer. A second insulating layer is formed at least over the first insulating layer and the air gap. The second insulating layer does not cover the interconnect. An etching stopper film is formed at least over the second insulating layer. The etching stopper film is formed over the second insulating layer and the interconnect. A third insulating layer is formed over the etching stopper film. A via is provided in the third insulating layer so as to be connected to the interconnect. | 10-28-2010 |
20100270683 | Semiconductor device and method of manufacturing semiconductor device - An interconnect is provided in a first insulating layer and the upper surface of the interconnect is higher than the upper surface of the first insulating layer. An air gap is disposed between the interconnect and the first insulating layer. An etching stopper film is formed over the first insulating layer, the air gap, and the interconnect. A second insulating layer is formed over the etching stopper film. A via is provided in the second insulating layer and is connected to the interconnect. A portion of the etching stopper film that is disposed over the air gap is thicker than another portion that is disposed over the interconnect. | 10-28-2010 |
20110171775 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming a first insulating film over an underlying film by plasma polymerization of cyclic siloxane, and forming a second insulating film on the first insulating film by plasma polymerization of the cyclic siloxane continuously, after forming the first insulating film. The deposition rate of the first insulating film is slower than the deposition rate of the second insulating film. | 07-14-2011 |
20110183518 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - There is provided a method of manufacturing a semiconductor device, which includes forming a TiN film as a hard mask directly on a second p-SiCOH film formed on a substrate, forming an opening passing through the TiN film and the second p-SiCOH film by photolithography and etching, cleaning the inside of the opening, removing the TiN film after cleaning the inside, and forming a second metal film filling the opening directly on the second p-SiCOH film after removing the TiN film. | 07-28-2011 |
20110207318 | Semiconductor device and method of manufacturing the same - A method of manufacturing a semiconductor device, includes burying a conductive pattern in an insulating film made of SiOH, SiCOH or organic polymer, treating surfaces of the insulating film and the conductive pattern with plasma which includes a hydrocarbon gas as a treatment gas, and forming a diffusion barrier film, which is formed of an SiCH film, an SiCHN film, an SiCHO film or an SiCHON film, over the insulating film and the conductive pattern with performing a plasma CVD by adding an Si-containing gas to the treatment gas while increasing the addition amount gradually or in a step-by-step manner. | 08-25-2011 |
20120009789 | Semiconductor device having seal ring structure and method of forming the same - A method of producing a semiconductor device includes forming, on a first insulating film formed on a substrate, a first groove in an element-forming region to form one of a via and a wiring therein, and a first seal ring groove in a seal ring part, forming one of a via and a wiring in the first groove and a first metal layer in the first seal ring groove, and then removing the metal material in a part exposed to an outside of the first groove and the first seal ring groove, forming a second insulating film on the first insulating film, forming, on the second insulating film, a second groove, and a second seal ring groove in the seal ring part on the first seal ring groove, and forming one of a via and a wiring in the second groove and a second metal layer. | 01-12-2012 |
20120032344 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A plurality of interconnects is, for example, a plurality of Cu interconnects, extending parallel to each other. Sidewall insulating films are formed at the sidewalls of each of a plurality of interconnects. An air gap is formed between each of a plurality of interconnects, and is located between a plurality of sidewall insulating films. The insulating film is formed on a plurality of interconnects, a plurality of sidewall insulating films, and the air gap. A via passes through the insulating film, and is connected to any of the interconnects. The sidewall insulating film is formed of a material having an etching rate lower than that of the insulating film in the conditions in which the insulating film is etched. | 02-09-2012 |
20120080805 | Semiconductor device and method of manufacturing the same - A semiconductor device according to the invention includes a first Cu interconnect and a first barrier insulating film. a The first barrier insulating film is provided on the first Cu interconnect, and prevents Cu from being diffused from the first Cu interconnect. In addition, the semiconductor device includes a second Cu interconnect and a second barrier insulating film on the first barrier insulating film. The second barrier insulating film is provided on a first Cu interconnect, and prevents Cu from being diffused from the second Cu interconnect. The first and second barrier insulating films are made of a silicon-based insulating film having a branched alkyl group and a carbon-carbon double bond. | 04-05-2012 |
20120083115 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE HAVING AN INTERCONNECT STRUCTURE AND A REINFORCING INSULATING FILM - A semiconductor device includes in an interconnect structure which includes a first interconnect made of a copper-containing metal, a first Cu silicide layer covering the upper portion of the first interconnect, a conductive first plug provided on the upper portion of the Cu silicide layer and connected to the first interconnect, a Cu silicide layer covering the upper portion of the first plug, a first porous MSQ film provided over the side wall from the first interconnect through the first plug and formed to cover the side wall of the first interconnect, the upper portion of the first interconnect, and the side wall of the first plug, and a first SiCN film disposed under the first porous MSQ film to contact with the lower portion of the side wall of the first interconnect and having the greater film density than the first porous MSQ film. | 04-05-2012 |
20120181694 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The semiconductor device includes an interlayer insulating film, a wiring provided in the interlayer insulating film, and a SiN film provided over the interlayer insulating film and over the wiring. The peak positions of Si—N bonds of the SiN film, which are measured by FTIR, are within the range of 845 cm | 07-19-2012 |
20120315751 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming a first insulating layer, forming a trench in the first insulating layer, forming an interconnect in the trench, forming a space between the first insulating layer and the interconnect, and disposing an upper surface of the interconnect at a position higher than an upper surface of the first insulating layer, forming an air gap in the space and forming an etching stopper film over the first insulating layer and the interconnect, forming a second insulating layer over the etching stopper film, and forming a via in the second insulating layer to be disposed over the interconnect. | 12-13-2012 |
20130069238 | SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A first wiring is disposed over a semiconductor substrate. A first via is disposed over the first wiring. Further, the bottom surface of the first via is in contact with the first wiring. A first insulation layer is disposed over the semiconductor substrate, and is in contact with at least the top surface of the first wiring and the side surface of the first via. At least a part of each side surface of the first wiring and the first via cuts off each metal crystal grain. | 03-21-2013 |
20130249084 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes an interlayer insulating film containing Si, O, C, and H, an under-bump metal film disposed over the interlayer insulating film and containing Ni, and a bump electrode disposed over the under-bump metal film. In the interlayer insulating film, a ratio of a peak height of Si—CH | 09-26-2013 |
20150228586 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor device includes an interlayer insulating film INS | 08-13-2015 |
Patent application number | Description | Published |
20100151675 | WIRING STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - There are provided with a wiring structure and a method for manufacturing the same wherein in a wiring structure of multi-layered wiring in which a metal wiring is formed on a substrate forming a semiconductor element thereby obtaining connection of the element, no damage to insulation property between the abutting wirings by occurrence of leakage current and no deterioration of insulation resistance property between the abutting wirings are achieved in case that fine metal wiring is formed in a porous insulation film. The insulation barrier layer | 06-17-2010 |
20100224995 | SEMICONDUCTOR DEVICE HAVING SILICON-DIFFUSED METAL WIRING LAYER AND ITS MANUFACTURING METHOD - In a semiconductor device, an insulating interlayer having a groove is formed on an insulating underlayer. A silicon-diffused metal layer including no metal silicide is buried in the groove. A metal diffusion barrier layer is formed on the silicon-diffused metal layer and the insulating interlayer. | 09-09-2010 |
20120108060 | SEMICONDUCTOR DEVICE HAVING SILICON-DIFFUSED METAL WIRING LAYER AND ITS MANUFACTURING METHOD - In a semiconductor device, an insulating interlayer having a groove is formed on an insulating underlayer. A silicon-diffused metal layer including no metal silicide is buried in the groove. A metal diffusion barrier layer is formed on the silicon-diffused metal layer and the insulating interlayer. | 05-03-2012 |
20140113438 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a method of manufacturing a semiconductor device in which a via hole and a trench are formed in a low dielectric constant film using a hard mask film having at least three layers. In a process of forming the hard mask film having at least three layers, the hard mask film formed of an insulating material and the hard mask film formed of a metal material, amorphous silicon or polycrystalline silicon are alternately laminated. | 04-24-2014 |
20150318201 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device, including (a) forming an interlayer insulating film over a semiconductor substrate; (b) forming a third hard mask film over the interlayer insulating film; (c) forming a second hard mask film over the third hard mask film; (d) forming a first hard mask film over the second hard mask film; (e) after the step (d), forming a first opening in the first hard mask film and a second opening in the second hard mask film by etching the first and second hard mask films, respectively; (f) after the step (e), etching the first hard mask film so as to expand the first opening; and (g) after the step (f), etching the third hard mask film and a part of the interlayer insulating film in the second opening by using the second hard mask film as a mask. | 11-05-2015 |