Patent application number | Description | Published |
20090101962 | Semiconductor devices and methods of manufacturing and operating same - A semiconductor device and methods of manufacturing and operating the semiconductor device may be disclosed. The semiconductor device may comprise different nanostructures. The semiconductor device may have a first element formed of nanowires and a second element formed of nanoparticles. The nanowires may be ambipolar carbon nanotubes (CNTs). The first element may be a channel layer. The second element may be a charge trap layer. In this regard, the semiconductor device may be a transistor or a memory device. | 04-23-2009 |
20100028814 | MANUFACTURING CROSS-STRUCTURES OF NANOSTRUCTURES - Techniques for manufacturing cross-structures of nanostructures, such as nanowires and carbon nanotubes are provided. In one embodiment, a method for manufacturing cross-structures of nanostructures include providing a substrate, patterning a first mask layer on the substrate, adsorbing first nanostructures onto surface regions of the substrate where the first mask layer does not exist, removing the first mask layer from the substrate, patterning a second mask layer on the substrate to which the first nanostructures are adsorbed, and adsorbing second nanostructures onto the surface regions of the substrate where the second mask layer does not exist, under conditions effective to manufacture cross-structures of nanostructures on the substrate. | 02-04-2010 |
20100032409 | FABRICATING A GRAPHENE NANO-DEVICE - Nanoscale graphene structure fabrication techniques are provided. An oxide nanowire useful as a mask is formed on a graphene layer and then ion beam etching is performed. A nanoscale graphene structure is fabricated by removing a remaining oxide nanowire after the ion beam etching. | 02-11-2010 |
20100032719 | PROBES FOR SCANNING PROBE MICROSCOPY - Disclosed are probes for scanning probe microscopy comprising a semiconductor heterostructure and methods of making the probes. The semiconductor heterostructure determines the optical properties of the probe and allows for optical imaging with nanometer resolution. | 02-11-2010 |
20100035186 | MANUFACTURING A GRAPHENE DEVICE AND A GRAPHENE NANOSTRUCTURE SOLUTION - Techniques for manufacturing a graphene structure solution and a graphene device are provided. A uniform graphene nanostructure solution is produced by applying anisotropic etching on a multi-layered graphene using an oxide nanowire as a mask. A graphene device is manufactured by dipping a substrate with a pattern of a molecule layer in a graphene nanostructure solution so that graphenes are aligned on the substrate with the pattern. | 02-11-2010 |
20100044777 | RECONFIGURABLE SEMICONDUCTOR DEVICE - A reconfigurable semiconductor device is disclosed. The semiconductor device includes a substrate, a first insulating material formed on the substrate, two channels having different polarities, a plurality of terminal electrodes formed on the insulating material and coupled in common with the channels at their opposite ends, a second insulating material formed on the terminal electrodes, and a control gate formed on the second insulating material. The channels have different polarity and a charge storage layer is formed inside the second insulating material. The control gate is applied with a forward bias or a reverse bias and then the bias is cut off. The voltage-current characteristics of the semiconductor device are changed according to an electrical charge created in the charge storage layer. | 02-25-2010 |
20100045610 | TRANSPARENT CONDUCTIVE FILMS - A transparent conductive film comprised of a carbon nanotube network and indium tin oxide composite and a method for manufacturing the transparent conductive film are provided. | 02-25-2010 |
20100047444 | ASSEMBLING NANOSTRUCTURES ON A SUBSTRATE - Techniques for assembling nanostructures on a substrate are provided. Methods for assembling nanostructures on a substrate may involve, but are not limited to, detaching nanostructures from a wafer, passing the nanostructures through a filter, and assembling the nanostructures onto a patterned substrate. | 02-25-2010 |
20100047581 | ACTIN FILAMENT ASSOCIATED NANODEVICES - Techniques for assembling actin filaments on a substrate and nanodevices including actin filaments are provided. | 02-25-2010 |
20110210765 | RECONFIGURABLE SEMICONDUCTOR DEVICE - A reconfigurable semiconductor device is disclosed. The semiconductor device includes a substrate, a first insulating material formed on the substrate, two channels having different polarities, a plurality of terminal electrodes formed on the insulating material and coupled in common with the channels at their opposite ends, a second insulating material formed on the terminal electrodes, and a control gate formed on the second insulating material. The channels have different polarity and a charge storage layer is formed inside the second insulating material. The control gate is applied with a forward bias or a reverse bias and then the bias is cut off. The voltage-current characteristics of the semiconductor device are changed according to an electrical charge created in the charge storage layer. | 09-01-2011 |
20120012817 | Semiconductor devices and methods of manufacturing an operating same - A semiconductor device and methods of manufacturing and operating the semiconductor device may be disclosed. The semiconductor device may comprise different nanostructures. The semiconductor device may have a first element formed of nanowires and a second element formed of nanoparticles. The nanowires may be ambipolar carbon nanotubes (CNTs). The first element may be a channel layer. The second element may be a charge trap layer. In this regard, the semiconductor device may be a transistor or a memory device. | 01-19-2012 |