Patent application number | Description | Published |
20100029896 | Novel Coordination complexes and process of producing polycarbonate by copolymerization of carbon dioxide and epoxide using the same as catalyst - Provided are a complex prepared from ammonium salt-containing ligands and having such an equilibrium structural formula that the metal center takes a negative charge of 2 or higher, and a method for preparing polycarbonate via copolymerization of an epoxide compound and carbon dioxide using the complex as a catalyst. When the complex is used as a catalyst for copolymerizing an epoxide compound and carbon dioxide, it shows high activity and high selectivity and provides high-molecular weight polycarbonate, and thus easily applicable to commercial processes. In addition, after forming polycarbonate via carbon dioxide/epoxide copolymerization using the complex as a catalyst, the catalyst may be separately recovered from the copolymer. | 02-04-2010 |
20100081776 | TRANSITION METAL CATALYTIC SYSTEMS AND METHODS FOR PREPARING ETHYLENE HOMOPOLYMERS OR COPOLYMERS OF ETHYLENE AND a-OLEFINS USING THE SAME - Provided are transition metal catalytic systems for preparing ethylene homopolymers or copolymers of ethylene with α-olefins. More specifically, provided are Group 4 transition metal catalysts, which is characterized in that the catalyst comprises around the Group 4 transition metal a cyclopentadiene derivative, and at least one aryloxide ligand(s) having a fluorenyl group or a derivative thereof (which is ready to be substituted at 9-position) that functions as an electron donor and serves to stabilize the catalytic system by surrounding an oxygen atom that links the ligand to the transition metal at ortho-position, and there is no cross-linkage between the ligands; catalytic systems comprising such transition metal catalyst and aluminoxane cocatalyst or boron compound cocatalyst; and processes for preparing ethylene homopolymers or copolymers of ethylene with α-olefins by using the same. | 04-01-2010 |
20100113720 | METHOD FOR PREPARING ELASTOMERIC COPOLYMERS OF ETHYLENE AND ALPHA-OLEFINS - Provided is a process for preparing copolymers of ethylene with α-olefin. More specifically, provided are transition metal compound being useful as catalyst for preparing those copolymers, a catalyst composition comprising the same, and a process for preparing elastic copolymers of ethylene with α-olefin, having the density of not more than 0.910, which can be adopted to a wide variety of applications including film, electric wires, and hot-melt adhesives. The catalyst composition is a catalytic system which comprises transition metal catalyst comprising a cyclopentadiene derivative and at least one anionic ligand(s) of aryloxy group with an aryl derivative at ortho-position, and boron or aluminum compound as an activator. Provided is a process for copolymerizing ethylene with α-olefin to produce copolymer having narrow molecular weight distribution and uniform density distribution with the density of not more than 0.910, with high activity and excellent reactivity on higher α-olefin. | 05-06-2010 |
20100120981 | ETHYLENE COPOLYMER AND A METHOD OF PREPARING THE SAME - Provided are ethylene copolymers and a process for preparing the same. More specifically, provided are ethylene copolymers exhibiting excellent processibility and physical properties due to its multimodal molecular weight distribution index, through a multi-stage process by using reactors connected in series or in parallel in the presence of catalyst composition containing transition metal catalyst, and a process for preparing the same. | 05-13-2010 |
20100324260 | Catalytic System for CO2/Epoxide Copolymerization - The present invention related to a method of manufacturing a polycarbonate including the process of copolymerizing epoxide compound and CO2 using cobalt(III) or chromium(III), where the ligands contains at least 3 ammonium cations, central metal has formal −1 charge, and conjugated anions of the two cationic ammonium groups are acid-base homoconjugation, as catalyst. | 12-23-2010 |
20110054145 | Continuous Process for Manufacturing Aliphatic Polycarbonates from Carbon Dioxide and Epoxides - Disclosed is a continuous process for manufacturing aliphatic polycarbonate by polymerizing carbon dioxide and one or more epoxide compound in the presence of catalyst, in which carbon dioxide, one or more epoxide compound, and the catalyst are continuously supplied to polymerization reactor to produce aliphatic polycarbonate, separate unreacted carbon dioxide and epoxide compound and recycle them as raw materials. | 03-03-2011 |
20110098426 | TRANSITION METAL CATALYTIC SYSTEMS AND METHODS FOR PREPARING ETHYLENE HOMOPOLYMERS OR COPOLYMERS OF THE ETHYLENE AND a-OLEFINS USING THE SAME - Provided are transition metal catalytic systems for preparing ethylene homopolymers or copolymers of ethylene with α-olefins. More specifically, provided are Group 4 transition metal catalysts, which is characterized in that the catalyst comprises around the Group 4 transition metal a cyclopentadiene derivative, and at least one aryloxide ligand(s) having a fluorenyl group or a derivative thereof (which is ready to be substituted at 9-position) that functions as an electron donor and serves to stabilize the catalytic system by surrounding an oxygen atom that links the ligand to the transition metal at ortho-position, and there is no cross-linkage between the ligands; catalytic systems comprising such transition metal catalyst and aluminoxane cocatalyst or boron compound cocatalyst; and processes for preparing ethylene homopolymers or copolymers of ethylene with α-olefins by using the same. | 04-28-2011 |
20110172380 | NEW TRANSITION METAL CATALYTIC SYSTEMS AND METHODS FOR PREPARING ETHYLENE HOMOPOLYMERS OR COPOLYMERS OF ETHYLENE AND a-OLEFINS USING THE SAME - Provided are transition metal catalytic systems for preparing ethylene homopolymers or copolymers of ethylene with α-olefins. More specifically, provided are Group 4 transition metal catalysts, which is characterized in that the Group 4 transition metal catalyst comprises around the Group 4 transition metal a cyclopentadiene derivative, and at least one naphthoxide ligand(s) having aryl substituent(s) that function(s) as an electron donor and serve(s) to stabilize the catalyst system by surrounding an oxygen atom that links the ligand to the transition metal at 2-position, and there is no cross-linkage between the ligands; catalytic systems comprising such transition metal catalyst and aluminoxane cocatalyst or boron compound cocatalyst; and processes for preparing ethylene homopolymers or copolymers of ethylene with α-olefins by using the same. | 07-14-2011 |
20110245424 | Precise Control of Molecular Weight and Chain Shape Control in Carbon Dioxide/Epoxide Alternating Copolymerization and Preparation of Low Molecular Weight Poly(alkylene Carbonate) Thereby - This invention relates to a method of preparing poly(alkylene carbonate) that has a molecular weight and polymer chain structure precisely controlled by adding a chain transfer agent composed of a compound having an alcohol or carboxylic acid functional group upon alternating copolymerization of an epoxide compound and carbon dioxide using a catalyst composed of a trivalent metal complex compound synthesized from a quaternary ammonium salt-containing Salen type ligand, and to a polymer compound prepared thereby. According to this invention, the polymer compound having a star-shaped chain as well as the polymer having a linear chain can be prepared. The low-molecular-weight poly(alkylene carbonate) has an —OH terminal group and can be used alone as a coating agent, etc., and also in mixtures with an isocyanate compound and thus can be easily utilized to prepare polyurethane. | 10-06-2011 |
20110251355 | Block and Graft Copolymers of Poly(Alkylene Carbonate) and Various Polymers - Provided is preparation of poly(alkylene carbonate) by alternating copolymerization of carbon dioxide and epoxide. To be specific, provided are a method for preparing block or graft copolymers of the polymer compound and poly(alkylene carbonate) by alternating-copolymerization of an epoxide compound and carbon dioxide by using a metal (III) compound prepared from salen-type ligand with a quaternary ammonium salt as a catalyst in the presence of a polymer compound having a functional group of hydroxyl or carboxylic acid, and block or graft copolymers prepared by the method. | 10-13-2011 |
20110282011 | METHOD FOR PREPARING ELASTOMERIC COPOLYMERS OF ETHYLENE AND a-OLEFINS - Provided is a process for preparing copolymers of ethylene with α-olefin. More specifically, provided are transition metal compound being useful as catalyst for preparing those copolymers, a catalyst composition comprising the same, and a process for preparing elastic copolymers of ethylene with α-olefin, having the density of not more than 0.910, which can be adopted to a wide variety of applications including film, electric wires, and hot-melt adhesives. The catalyst composition is a catalytic system which comprises transition metal catalyst comprising a cyclopentadiene derivative and at least one anionic ligand(s) of aryloxy group with an aryl derivative at ortho-position, and boron or aluminum compound as an activator. Provided is a process for copolymerizing ethylene with α-olefin to produce copolymer having narrow molecular weight distribution and uniform density distribution with the density of not more than 0.910, with high activity and excellent reactivity on higher α-olefin. | 11-17-2011 |
20110319576 | PROCESS FOR PREPARING ETHYLENE HOMOPOLYMERS OR COPOLYMERS OF ETHYLENE WITH ALPHA-OLEFIN BY USING THE TRANSITION METAL COMPOUND - Provided are transition metal catalytic systems for preparing ethylene homopolymers or copolymers of ethylene with α-olefins. More specifically, provided are Group 4 transition metal catalysts, which is characterized in that the catalyst comprises around the Group 4 transition metal a cyclopentadiene derivative, and at least one aryloxide ligand(s) having a fluorenyl group or a derivative thereof (which is ready to be substituted at 9-position) that functions as an electron donor and serves to stabilize the catalytic system by surrounding an oxygen atom that links the ligand to the transition metal at ortho-position, and there is no cross-linkage between the ligands; catalytic systems comprising such transition metal catalyst and aluminoxane cocatalyst or boron compound cocatalyst; and processes for preparing ethylene homopolymers or copolymers of ethylene with α-olefins by using the same. | 12-29-2011 |
20120041149 | ETHYLENE COPOLYMER AND A METHOD OF PREPARING THE SAME - Provided are ethylene copolymers and a process for preparing the same. More specifically, provided are ethylene copolymers exhibiting excellent processibility and physical properties due to its multimodal molecular weight distribution index, through a multi-stage process by using reactors connected in series or in parallel in the presence of catalyst composition containing transition metal catalyst, and a process for preparing the same. | 02-16-2012 |
20120165549 | NOVEL COORDINATION COMPLEXES AND PROCESS OF PRODUCING POLYCARBONATE BY COPOLYMERIZATION OF CARBON DIOXIDE AND EPOXIDE USING THE SAME AS CATALYST - Provided are a complex prepared from ammonium salt-containing ligands and having such an equilibrium structural formula that the metal center takes a negative charge of 2 or higher, and a method for preparing polycarbonate via copolymerization of an epoxide compound and carbon dioxide using the complex as a catalyst. When the complex is used as a catalyst for copolymerizing an epoxide compound and carbon dioxide, it shows high activity and high selectivity and provides high-molecular weight polycarbonate, and thus easily applicable to commercial processes. In addition, after forming polycarbonate via carbon dioxide/epoxide copolymerization using the complex as a catalyst, the catalyst may be separately recovered from the copolymer. | 06-28-2012 |
20120165575 | NOVEL COORDINATION COMPLEXES AND PROCESS OF PRODUCING POLYCARBONATE BY COPOLYMERIZATION OF CARBON DIOXIDE AND EPOXIDE USING THE SAME AS CATALYST - Provided are a complex prepared from ammonium salt-containing ligands and having such an equilibrium structural formula that the metal center takes a negative charge of 2 or higher, and a method for preparing polycarbonate via copolymerization of an epoxide compound and carbon dioxide using the complex as a catalyst. When the complex is used as a catalyst for copolymerizing an epoxide compound and carbon dioxide, it shows high activity and high selectivity and provides high-molecular weight polycarbonate, and thus easily applicable to commercial processes. In addition, after forming polycarbonate via carbon dioxide/epoxide copolymerization using the complex as a catalyst, the catalyst may be separately recovered from the copolymer. | 06-28-2012 |
20120178899 | NOVEL COORDINATION COMPLEXES AND PROCESS OF PRODUCING POLYCARBONATE BY COPOLYMERIZATION OF CARBON DIOXIDE AND EPOXIDE USING THE SAME CATALYST - Provided are a complex prepared from ammonium salt-containing ligands and having such an equilibrium structural formula that the metal center takes a negative charge of 2 or higher, and a method for preparing polycarbonate via copolymerization of an epoxide compound and carbon dioxide using the complex as a catalyst. When the complex is used as a catalyst for copolymerizing an epoxide compound and carbon dioxide, it shows high activity and high selectivity and provides high-molecular weight polycarbonate, and thus easily applicable to commercial processes. In addition, after forming polycarbonate via carbon dioxide/epoxide copolymerization using the complex as a catalyst, the catalyst may be separately recovered from the copolymer. | 07-12-2012 |
20120208979 | Flame-Retarding Carbon Dioxide/Epoxide Copolymer and Method for Preparing the Same - There is provided a method for preparing a low-molecular weight poly(alkylene carbonate) of which the molecular weight and chain shape are precisely controlled, by introducing a phosphorous compound having a hydroxyl group as a chain transfer agent in order to regulate the molecular weight, in alternating copolymerizing an epoxide compound and carbon dioxide by using trivalent metal complex prepared from a Salen type ligand containing a quaternary ammonium salt, and a polymer prepared by the method. | 08-16-2012 |
20120232245 | Method for Preparing Carbon Dioxide/Epoxide Copolymers Containing Ether Linkages - Provided is a method for preparing poly(alkylene carbonate) containing ether linkages, by the copolymerization of an epoxy compound and carbon dioxide, with a trivalent metal complex prepared from a salen type ligand containing a quaternary ammonium salt, and a double metal cyanide (DMC) catalyst together. The amount of ether linkages can be controlled by regulating the weight ratio of two catalysts and the carbon dioxide pressure. | 09-13-2012 |
20130075666 | Polymer Electrolyte Composition and Dye-Sensitized Solar Cell Containing the Same - Disclosed is a polymer electrolyte composition, a gel-type polymer electrolyte obtained by mixing the same at normal temperature, and a dye-sensitized solar cell containing the electrolyte. Since the poly(alkylene carbonate)-based polymer is included, a crosslinking process by radiation of heat or UV is not required when the polymer electrolyte is manufactured, such that a manufacturing process is simple. Accordingly, the polymer electrolyte is useful for mass production of a solar cell and maintained in a uniform state without a phase separation between two components due to excellent affinity between the polymer and the organic solvent included in the electrolyte, and has excellent electrode-electrolyte interface property in the solar cell due to an adhesive property of the gelled polymer electrolyte. | 03-28-2013 |
20130131308 | Catalytic System for Co2/Epoxide Copolymerization - The present invention related to a method of manufacturing a polycarbonate including the process of copolymerizing epoxide compound and CO2 using cobalt(III) or chromium(III), where the ligands contains at least 3 ammonium cations, central metal has formal −1 charge, and conjugated anions of the two cationic ammonium groups are acid-base homoconjugation, as catalyst. | 05-23-2013 |
20140163179 | Block and Graft Copolymers of Poly(Alkylene Carbonate) and Various Polymers - Provided is preparation of poly(alkylene carbonate) by alternating copolymerization of carbon dioxide and epoxide. To be specific, provided are a method for preparing block or graft copolymers of the polymer compound and poly(alkylene carbonate) by alternating-copolymerization of an epoxide compound and carbon dioxide by using a metal (III) compound prepared from salen-type ligand with a quaternary ammonium salt as a catalyst in the presence of a polymer compound having a functional group of hydroxyl or carboxylic acid, and block or graft copolymers prepared by the method. | 06-12-2014 |
20140221605 | NOVEL COORDINATION COMPLEXES AND PROCESS OF PRODUCING POLYCARBONATE BY COPOLYMERIZATION OF CARBON DIOXIDE AND EPOXIDE USING THE SAME AS CATALYST - Provided are a complex prepared from ammonium salt-containing ligands and having such an equilibrium structural formula that the metal center takes a negative charge of 2 or higher, and a method for preparing polycarbonate via copolymerization of an epoxide compound and carbon dioxide using the complex as a catalyst. When the complex is used as a catalyst for copolymerizing an epoxide compound and carbon dioxide, it shows high activity and high selectivity and provides high-molecular weight polycarbonate, and thus easily applicable to commercial processes. In addition, after forming polycarbonate via carbon dioxide/epoxide copolymerization using the complex as a catalyst, the catalyst may be separately recovered from the copolymer. | 08-07-2014 |
20140378651 | Flame-Retarding Carbon Dioxide/Epoxide Copolymer and Method for Preparing the Same - There is provided a method for preparing a low-molecular weight poly(alkylene carbonate) of which the molecular weight and chain shape are precisely controlled, by introducing a phosphorous compound having a hydroxyl group as a chain transfer agent in order to regulate the molecular weight, in alternating copolymerizing an epoxide compound and carbon dioxide by using trivalent metal complex prepared from a Salen type ligand containing a quaternary ammonium salt, and a polymer prepared by the method. | 12-25-2014 |
20150175743 | Catalytic System for CO2/Epoxide Copolymerization - The present invention relates to a method of manufacturing a polycarbonate including the process of copolymerizing epoxide compound and CO2 using cobalt(III) or chromium(III), where the ligands contains at least 3 ammonium cations, central metal has formal −1 charge, and conjugated anions of the two cationic ammonium groups are acid-base homoconjugation, as catalyst. According to the present invention, the initial induction time can be reduced when the polycarbonate is manufactured and it is possible to improve the activity of the catalyst and the molecular weight of the obtained polymer. | 06-25-2015 |
20160075824 | NOVEL COORDINATION COMPLEXES AND PROCESS OF PRODUCING POLYCARBONATE BY COPOLYMERIZATION OF CARBON DIOXIDE AND EPOXIDE USING THE SAME AS CATALYST - Provided are a complex prepared from ammonium salt-containing ligands and having such an equilibrium structural formula that the metal center takes a negative charge of 2 or higher, and a method for preparing polycarbonate via copolymerization of an epoxide compound and carbon dioxide using the complex as a catalyst. When the complex is used as a catalyst for copolymerizing an epoxide compound and carbon dioxide, it shows high activity and high selectivity and provides high-molecular weight polycarbonate, and thus easily applicable to commercial processes. In addition, after forming polycarbonate via carbon dioxide/epoxide copolymerization using the complex as a catalyst, the catalyst may be separately recovered from the copolymer. | 03-17-2016 |
Patent application number | Description | Published |
20090265678 | System and Method of Resistance Based Memory Circuit Parameter Adjustment - Systems and methods of resistance based memory circuit parameter adjustment are disclosed. In a particular embodiment, a method of determining a set of parameters of a resistance based memory circuit includes selecting a first parameter based on a first predetermined design constraint of the resistance based memory circuit and selecting a second parameter based on a second predetermined design constraint of the resistance based memory circuit. The method further includes performing an iterative methodology to adjust at least one circuit parameter of a sense amplifier portion of the resistance based memory circuit by selectively assigning and adjusting a physical property of the at least one circuit parameter to achieve a desired sense amplifier margin value without changing the first parameter or the second parameter. | 10-22-2009 |
20100157654 | Balancing A Signal Margin Of A Resistance Based Memory Circuit - A resistance based memory circuit is disclosed. The circuit includes a first transistor load of a data cell and a bit line adapted to detect a first logic state. The bit line is coupled to the first transistor load and coupled to a data cell having a magnetic tunnel junction (MTJ) structure. The bit line is adapted to detect data having a logic one value when the bit line has a first voltage value, and to detect data having a logic zero value when the bit line has a second voltage value. The circuit further includes a second transistor load of a reference cell. The second transistor load is coupled to the first transistor load, and the second transistor load has an associated reference voltage value. A characteristic of the first transistor load, such as transistor width, is adjustable to modify the first voltage value and the second voltage value without substantially changing the reference voltage value. | 06-24-2010 |
20100321976 | Split Path Sensing Circuit - A sensing circuit is disclosed. The sensing circuit includes a first path including a first resistive memory device and a second path including a reference resistive memory device. The first path is coupled to a first split path including a first load transistor and to a second split path including a second load transistor. The second path is coupled to a third split path including a third load transistor and to a fourth split path including a fourth load transistor. | 12-23-2010 |
20110267874 | Invalid Write Prevention for STT-MRAM Array - In a Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) a bit cell array can have a source line substantially parallel to a word line. The source line can be substantially perpendicular to bit lines. A source line control unit includes a common source line driver and a source line selector configured to select individual ones of the source lines. The source line driver and source line selector can be coupled in multiplexed relation. A bit line control unit includes a common bit line driver and a bit line selector in multiplexed relation. The bit line control unit includes a positive channel metal oxide semiconductor (PMOS) element coupled between the common source line driver and bit line select lines and bit lines. | 11-03-2011 |
20120026783 | Latching Circuit - A non-volatile latch circuit includes a pair of cross-coupled inverters, a pair of resistance-based memory elements, and write circuitry configured to write data to the pair of resistance-based memory elements. The pair of resistance-based memory elements is isolated from the pair of cross-coupled inverters during a latching operation. A sensing circuit includes a first current path that includes a first resistance-based memory element and an output of the sensing circuit. The sensing circuit includes a second current path to reduce current flow through the first resistance-based memory element at a first operating point of the sensing circuit. The sensing circuit may also include an n-type metal-oxide-semiconductor (NMOS) transistor to provide a step down supply voltage to the first current path. | 02-02-2012 |
20120275212 | Self-Body Biasing Sensing Circuit for Resistance-Based Memories - A resistance based memory sensing circuit has reference current transistors feeding a reference node and a read current transistor feeding a sense node, each transistor has a substrate body at a regular substrate voltage during a stand-by mode and biased during a sensing mode at a body bias voltage lower than the regular substrate voltage. In one option the body bias voltage is determined by a reference voltage on the reference node. The substrate body at the regular substrate voltage causes the transistors to have a regular threshold voltage, and the substrate body at the body bias voltage causes the transistors to have a sense mode threshold voltage, lower than the regular threshold voltage. | 11-01-2012 |
20130002352 | SENSING CIRCUIT - A circuit includes a degeneration p-channel metal-oxide-semiconductor (PMOS) transistor, a load PMOS transistor, and a clamp transistor configured to clamp a voltage applied to a resistance based memory element during a sensing operation. A gate of the load PMOS transistor is controlled by an output of an operational amplifier. | 01-03-2013 |
20130003447 | SENSING CIRCUIT - A circuit includes a degeneration p-channel metal-oxide-semiconductor (PMOS) transistor, a load PMOS transistor, and a clamp transistor configured to clamp a voltage applied to a resistance based memory element during a sensing operation. A gate of the load PMOS transistor is controlled by an output of a not-AND (NAND) circuit. | 01-03-2013 |
20130182500 | LATCHING CIRCUIT - A non-volatile latch circuit includes a pair of cross-coupled inverters, a pair of resistance-based memory elements, and write circuitry configured to write data to the pair of resistance-based memory elements. The pair of resistance-based memory elements is isolated from the pair of cross-coupled inverters during a latching operation. A sensing circuit includes a first current path that includes a resistance-based memory element and an output of the sensing circuit. The sensing circuit includes a second current path to reduce current flow through the resistance-based memory element at a first operating point of the sensing circuit. | 07-18-2013 |
20130194862 | NON-VOLATILE FLIP-FLOP - A flip-flop has an output control node and an isolation switch selectively couples a retention sense node to the output control node. A sense circuit selectively couples an external sense current source to the retention sense node and to magnetic tunneling junction (MTJ) elements. Optionally a write circuit selectively injects a write current through one MTJ element and then another MTJ element. Optionally, a write circuit injects a write current through a first MTJ element concurrently with injecting a write current through a second MTJ element. | 08-01-2013 |
20130215675 | INVALID WRITE PREVENTION FOR STT-MRAM ARRAY - In a Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) a bit cell array can have a source line substantially parallel to a word line. The source line can be substantially perpendicular to bit lines. A source line control unit includes a common source line driver and a source line selector configured to select individual ones of the source lines. The source line driver and source line selector can be coupled in multiplexed relation. A bit line control unit includes a common bit line driver and a bit line selector in multiplexed relation. The bit line control unit includes a positive channel metal oxide semiconductor (PMOS) element coupled between the common source line driver and bit line select lines and bit lines. | 08-22-2013 |
20130286721 | LOW SENSING CURRENT NON-VOLATILE FLIP-FLOP - A low sensing current non volatile flip flop includes a first stage to sense a resistance difference between two magnetic tunnel junctions (MTJs) and a second stage having circuitry to amplify the output of the first stage. The output of the first stage is initially pre-charged and determined by the resistance difference of the two MTJs when the sensing operation starts. The first stage does not have a pull-up path to a source voltage (VDD), and therefore does not have a DC path from VDD to ground during the sensing operation. A slow sense enable (SE) signal slope reduces peak sensing current in the first stage. A secondary current path reduces the sensing current duration of the first stage. | 10-31-2013 |
20130323827 | BIOCHIP INCLUDING CONDUCTIVE PARTICLE AND DEVICE FOR DETECTING TARGET ANTIGEN COMPRISING THE SAME - A biochip including conductive particle and a device for detecting target antigen comprising the biochip are disclosed. According to the present invention, a target antigen can be effectively detected using a small amount of target antigen alone, whereby nonspecific detection signal can be reduced and an amplified signal can be detected. | 12-05-2013 |
20140269031 | SYSTEM AND METHOD OF SENSING A MEMORY CELL - A method includes sensing a state of a data cell to generate a data voltage. The state of the data cell corresponds to a state of a programmable resistance based memory element of the data cell. The method further includes sensing a state of a reference cell to generate a reference voltage. The state of the data cell and the state of the reference cell are sensed via a common sensing path. The method further includes determining a logic value of the data cell based on the data voltage and the reference voltage. | 09-18-2014 |
20150027905 | REAGENT COMPOSITION FOR BIOSENSORS AND BIOSENSOR COMPRISING REAGENT LAYER FORMED OF THE SAME - The present invention relates to a composition which reduces the measurement error caused by the effect of hematocrit in a biosensor and to a biosensor comprising the same. Specifically, the invention relates to a reagent composition comprising an enzyme, an electron transfer mediator, a water-soluble polymer, and bile acid, and to a biosensor comprising a reagent layer formed of the composition. The reagent layer reduces the measurement error caused by the effect of hematocrit in the biosensor. | 01-29-2015 |
20150063012 | OFFSET CANCELING DUAL STAGE SENSING CIRCUIT - An offset canceling dual stage sensing method includes sensing a data value of a resistive memory data cell using a first load PMOS gate voltage generated by a reference value of a resistive memory reference cell in a first stage operation. The method also includes sensing the reference value of the resistive memory reference cell using a second load PMOS gate voltage generated by the data value of the resistive memory data cell in a second stage operation of the resistive memory sensing circuit. By adjusting the operating point of the reference cell sensing, an offset canceling dual stage sensing circuit increases the sense margin significantly compared to that of a conventional sensing circuit. | 03-05-2015 |
20150204811 | APPARATUS AND METHOD FOR MEASURING CHOLESTEROL - Disclosed are an apparatus and a method for effectively measuring cholesterol using a small amount of blood. The apparatus for measuring cholesterol includes a cartridge where an upper case having a sample transferring membrane is movably coupled to a lower case having a sample measuring membrane; a cartridge accommodation unit configured to accommodate the cartridge therein; a memory configured to store therein setting information for sample measurement; and a controller configured to align the membranes of the upper case and the lower case with each other, by horizontally moving the lower case of the cartridge, according to the stored setting information, and configured to contact the membranes of the upper case and the lower case with each other, by vertically moving the upper case for sample transfer on each alignment position. | 07-23-2015 |
20160093351 | CONSTANT SENSING CURRENT FOR READING RESISTIVE MEMORY - Systems and methods relate to providing a constant sensing current for reading a resistive memory element. A load voltage generator provides a load voltage based on a current mirror configured to supply a constant current that is invariant with process-voltage-temperature variations. A data voltage is generated based on the generated load voltage, by passing a sensing current mirrored from the constant current, through the resistive memory element. A reference voltage is generated, also based on the generated load voltage and by passing reference current mirrored from the constant current, through reference cells. A logical value stored in the resistive memory element is determined based on a comparison of the data voltage and the reference voltage, where the determination is free from effects of process-voltage-temperature variations. | 03-31-2016 |
20160093352 | REFERENCE VOLTAGE GENERATION FOR SENSING RESISTIVE MEMORY - Systems and methods relate to providing a correct reference voltage for reading a resistive memory element such as a magnetoresistive random access memory (MRAM) bit cell. Two or more reference voltages are provided for each MRAM bit cell and a correct reference voltage is selected from the two or more reference voltages for reading the MRAM bit cell. The correct reference voltage meets sensing margin requirements for reading the MRAM bit cell and overcomes non-idealities and offset voltages in read circuitry for reading the MRAM bit cell. An indication of the correct reference voltage is stored in a non-volatile latch or other non-volatile programmable memory and provided to the read circuitry. | 03-31-2016 |
20160093353 | DUAL STAGE SENSING CURRENT WITH REDUCED PULSE WIDTH FOR READING RESISTIVE MEMORY - Systems and methods for reducing a probability of read disturbance during a read operation on a resistive memory bit cell include a dual stage sensing scheme, which is used to reduce pulse widths of sensing currents for reading the resistive memory bit cell. During a first stage of the read operation on the resistive memory bit cell, a first sensing current is passed in a first direction through the resistive memory bit cell, and during a second stage of the read operation, a second sensing current is passed in an opposite, second direction through the resistive memory bit cell. Durations of the first and second stages are each equal to half of the duration of the read operation, which reduces pulse width of the first and second sensing currents. Probability of read disturbance occurring is limited to at most one of the first or second stages. | 03-31-2016 |