Herdt
Aimee R. Herdt, Jacksonville Beach, FL US
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20120040432 | METHODS AND MATERIALS FOR DELIVERING MOLECULES - This document relates to methods and materials involved in delivering molecules to a mammal. For example, methods and materials for using nanoparticles to increase the half-life and the bioavailability of molecules administered to a mammal are provided. | 02-16-2012 |
Björn Herdt, Bergisch Gladbach DE
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20150239159 | METHOD FOR PRODUCING A MOLDED PART MADE OF PLASTIC AND PROVIDED WITH A UV-CURED PAINT, AND SAID MOLDED PART - The invention relates to as method for producing a molded part in an injection mold, which molded part is made of plastic and provided with a UV-cured paint, wherein the UV-cured paint forms a visible surface designed as a functional surface. The invention further relates to such a molded part provided with a UV-cured paint, said molded part having a visible surface designed as a functional surface, wherein the UV-cured paint forms said visible surface. | 08-27-2015 |
Gregory Herdt, Selkirk, NY US
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20100029071 | METHOD OF FORMING SEMICONDUCTOR DEVICES CONTAINING METAL CAP LAYERS - Embodiments of methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices containing metal cap layers are generally described herein. According to one embodiment, a method of forming a semiconductor device includes planarizing a top surface of a workpiece to form a substantially planar surface with conductive paths and dielectric regions, forming metal cap layers on the conductive paths, and exposing the top surface of the workpiece to a dopant source from a gas cluster ion beam (GCIB) to form doped metal cap layers on the conductive paths and doped dielectric layers on the dielectric regions. According to some embodiments the metal cap layers and the doped metal cap layers contain a noble metal selected from Pt, Au, Ru, Rh, Ir, and Pd. | 02-04-2010 |
20100029078 | METHOD OF FORMING SEMICONDUCTOR DEVICES CONTAINING METAL CAP LAYERS - Embodiments of methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices containing metal cap layers are generally described herein. According to one embodiment, a method of forming a semiconductor device includes planarizing a top surface of a workpiece to form a substantially planar surface with conductive paths and dielectric regions, forming metal cap layers on the conductive paths, and exposing the top surface of the workpiece to a dopant source from a gas cluster ion beam (GCIB) to form doped metal cap layers on the conductive paths and doped dielectric layers on the dielectric regions. According to some embodiments the metal cap layers and the doped metal cap layers contain a noble metal selected from Pt, Au, Ru, Rh, Ir, and Pd. | 02-04-2010 |
20100227142 | ULTRA-THIN FILM FORMATION USING GAS CLUSTER ION BEAM PROCESSING - A method of preparing a thin film on a substrate is described. The method comprises forming an ultra-thin hermetic film over a portion of a substrate using a gas cluster ion beam (GCIB), wherein the ultra-thin hermetic film has a thickness less than approximately 5 nm. The method further comprises providing a substrate in a reduced-pressure environment, and generating a GCIB in the reduced-pressure environment from a pressurized gas mixture. A beam acceleration potential and a beam dose are selected to achieve a thickness of the thin film less than about 5 nanometers (nm). The GCIB is accelerated according to the beam acceleration potential, and the accelerated GCIB is irradiated onto at least a portion of the substrate according to the beam dose. By doing so, the thin film is formed on the at least a portion of the substrate to achieve the thickness desired. | 09-09-2010 |
Gregory Herdt, Boise, ID US
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20090098717 | CO-SPUTTER DEPOSITION OF METAL-DOPED CHALCOGENIDES - The present invention is related to methods and apparatus that allow a chalcogenide glass such as germanium selenide (Ge | 04-16-2009 |
Gregory Charles Herdt, Plano, TX US
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20100032842 | MODULATED DEPOSITION PROCESS FOR STRESS CONTROL IN THICK TiN FILMS - A multi-layer TiN film with reduced tensile stress and discontinuous grain structure, and a method of fabricating the TiN film are disclosed. The TiN layers are formed by PVD or IMP in a nitrogen plasma. Tensile stress in a center layer of the film is reduced by increasing N | 02-11-2010 |
20120322258 | MODULATED DEPOSITION PROCESS FOR STRESS CONTROL IN THICK TiN FILMS - A multi-layer TiN film with reduced tensile stress and discontinuous grain structure, and a method of fabricating the TiN film are disclosed. The TiN layers are formed by PVD or IMP in a nitrogen plasma. Tensile stress in a center layer of the film is reduced by increasing N | 12-20-2012 |
20130075910 | MODULATED DEPOSITION PROCESS FOR STRESS CONTROL IN THICK TiN FILMS - A multi-layer TiN film with reduced tensile stress and discontinuous grain structure, and a method of fabricating the TiN film are disclosed. The TiN layers are formed by PVD or IMP in a nitrogen plasma. Tensile stress in a center layer of the film is reduced by increasing N | 03-28-2013 |
Julee Ann Herdt, Boulder, CO US
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20120317923 | STRUCTURAL INSULATED BUILDING PANEL - A structural insulated panel is composed of a structural member in a corrugated form and a cohering, insulating filler material. The structural member has a plurality of front surfaces spaced laterally apart from each other and a plurality of back surfaces spaced laterally apart from each other and spaced apart in depth from the front surfaces. The structural member has a plurality of chord panels which span between corresponding edges of respective pairs of the front surfaces and the back surfaces. Chase channels are formed between adjacent pairs of the cord panels and one of the front surfaces or one of the back surfaces. Each chord panel defines a plurality of apertures. The filler material fills the chase channels, binds to the front surfaces, back surfaces, and chord panels, and extends through the apertures in each of the cord panels to structurally connect the filler material in adjacent chase channels. | 12-20-2012 |
20130253683 | Cut-Fold Shape Technology for Engineered Molded Fiber Boards - A three-dimensional engineered shaped fiber configuration is formed using determined structural requirements for a three-dimensional engineered shaped fiber configuration and ascertained properties of an engineered molded fiber fiberboard material. A first cut on a top surface and a second cut on a bottom surface of the fiberboard material are calculated. These calculations are based, at least in part, on the structural requirements properties of the fiberboard material. The first cut and the second cut each have a depth, a width, and a position. The first cut and the second cut have a spacing between them such that the flat piece of fiberboard material can be folded at a point located in the spacing between the first cut and second cut to position a first portion of the fiberboard material at a particular angle with respect to a second portion of the fiberboard material. | 09-26-2013 |