Patent application number | Description | Published |
20100029029 | Method of Manufacturing Light Emitting Device - A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a solvent in the solution is volatilized until the solution reaches the anode or cathode; and the remaining light emitting material is deposited on the anode or cathode to form a light emitting layer. A burning step for reduction in film thickness is not required after the solution application. Therefore, the manufacturing method, which requires low cost and is easy but which has high throughput, can be provided. | 02-04-2010 |
20100075470 | METHOD OF MANUFACTURING SOI SUBSTRATE - After a single crystal semiconductor layer provided over a base substrate by attaching is irradiated with a laser beam, characteristics thereof are improved by first heat treatment, and after adding an impurity element imparting conductivity to the single crystal semiconductor layer, second heat treatment is performed at lower temperature than that of the first heat treatment. | 03-25-2010 |
20110027920 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object of the present invention is to realize a light emitting device having low power consumption and high stability, in addition to improve extraction efficiency of light generated in a light emitting element. At least an interlayer insulating film (including a planarizing film), an anode, and a bank covering an edge portion of the anode contain chemically and physically stable silicon oxide, or are made of a material containing silicon oxide as its main component in order to accomplish a light emitting device having high stability. Generation of heat in a light emitting panel can be suppressed in addition to increase in efficiency (luminance/current) of a light emitting panel according to the structure of the present invention. Consequently, synergistic effect on reliability of a light emitting device is obtained. | 02-03-2011 |
20110042768 | Semiconductor Device and Method for Manufacturing Semiconductor Device - An object is to prevent a reduction of definition (or resolution) (a peripheral blur) caused when reflected light enters a photoelectric conversion element arranged at a periphery of a photoelectric conversion element arranged at a predetermined address. A semiconductor device is manufactured through the steps of: forming a structure having a first light-transmitting substrate, a plurality of photoelectric conversion elements over the first light-transmitting substrate, a second light-transmitting substrate provided so as to face the plurality of photoelectric conversion elements, a sealant arranged so as to bond the first light-transmitting substrate and the second light-transmitting substrate and surround the plurality of photoelectric conversion elements; and thinning the first light-transmitting substrate by wet etching. | 02-24-2011 |
20110043513 | DEVICE SUBSTRATE, LIGHT EMITTING DEVICE AND DRIVING METHOD OF LIGHT EMITTING DEVICE - A light emitting device comprising a light emitting element and a first transistor and a second transistor controlling current to be supplied to the light emitting element in a pixel; the first transistor is normally-on; the second transistor is normally-off; a channel length of the first transistor is longer than a channel width thereof; a channel length of the second transistor is equal to or shorter than a channel length thereof; gate electrodes of the first transistor and the second transistor are connected to each other; the first transistor and the second transistor have the same polarity; and the light emitting element, the first transistor and the second transistor are all connected in series. | 02-24-2011 |
20110049588 | Semiconductor Device and Manufacturing Method Thereof - An object of an embodiment of the disclosed invention is to provide a semiconductor device including a photoelectric conversion element with excellent characteristics. An object of an embodiment of the disclosed invention is to provide a semiconductor device including a photoelectric conversion device with excellent characteristic through a simple process. A semiconductor device is provided, which includes a light-transmitting substrate; an insulating layer over the light-transmitting substrate; and a photoelectric conversion element over the insulating layer. The photoelectric conversion element includes a single crystal semiconductor layer including a semiconductor region having an effect of photoelectric conversion, a semiconductor region having a first conductivity type, and a semiconductor region having a second conductivity type; a first electrode electrically connected to the semiconductor region having the first conductivity type; and a second electrode electrically connected to the semiconductor region having the second conductivity type. | 03-03-2011 |
20110281038 | Production Apparatus and Method of producing a Light-Emitting Device by Using the Same Apparatus - The present invention relates to a method for manufacturing a light-emitting device. At least one of a light-emitting film forming step, a conductive film forming step and an insulating film forming step is carried out while holding a substrate in a manner that an angle subtended by a surface of the substrate and the direction of gravity is within a range of from 0 to 30°. | 11-17-2011 |
20120129280 | Method of Manufacturing Light Emitting Device - A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a solvent in the solution is volatilized until the solution reaches the anode or cathode; and the remaining light emitting material is deposited on the anode or cathode to form a light emitting layer. A burning step for reduction in film thickness is not required after the solution application. Therefore, the manufacturing method, which requires low cost and is easy but which has high throughput, can be provided. | 05-24-2012 |
20120299889 | DEVICE SUBSTRATE, LIGHT EMITTING DEVICE AND DRIVING METHOD OF LIGHT EMITTING DEVICE - A light emitting device comprising a light emitting element and a first transistor and a second transistor controlling current to be supplied to the light emitting element in a pixel; the first transistor is normally-on; the second transistor is normally-off; a channel length of the first transistor is longer than a channel width thereof; a channel length of the second transistor is equal to or shorter than a channel length thereof; gate electrodes of the first transistor and the second transistor are connected to each other; the first transistor and the second transistor have the same polarity; and the light emitting element, the first transistor and the second transistor are all connected in series. | 11-29-2012 |
20130112955 | Light-Emitting Module and Light-Emitting Device - Provided is a light-emitting module from which light with uniform brightness can be extracted. Further, provided is a beautiful light-emitting module in which Newton's rings are not observed. The light-emitting module includes a first substrate, a light-emitting element formed on one surface side of the first substrate, a second substrate, a conductive spacer maintaining the gap between the first substrate and the second substrate, and a space in which the light-emitting element is sealed between the first substrate and the second substrate. Further, the pressure in the space is lower than or equal to the atmospheric pressure. Furthermore, the conductive spacer is electrically connected to the second electrode in a position overlapping with a partition provided over the first substrate so as to reduce a voltage drop occurring in the second electrode. | 05-09-2013 |
20130157392 | Method of Manufacturing Light Emitting Device - A method of manufacturing a light emitting device is provided which requires low cost, is easy, and has high throughput. The method of manufacturing a light emitting device is characterized in that: a solution containing a light emitting material is ejected to an anode or cathode under reduced pressure; a solvent in the solution is volatilized until the solution reaches the anode or cathode; and the remaining light emitting material is deposited on the anode or cathode to form a light emitting layer. A burning step for reduction in film thickness is not required after the solution application. Therefore, the manufacturing method, which requires low cost and is easy but which has high throughput, can be provided. | 06-20-2013 |
20140103385 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Occurrence of a crosstalk phenomenon in a light-emitting device including a tandem element is suppressed. A light-emitting device includes: lower electrodes over an insulating layer; a partition over a portion between the lower electrodes, which includes an overhang portion over an end portion of each of the lower electrodes; a first light-emitting unit over each of the lower electrodes and the partition; an intermediate layer over the first light-emitting unit; a second light-emitting unit over the intermediate layer; and an upper electrode over the second light-emitting unit. The distance between the overhang portion and each of the lower electrodes is larger than the total thickness of the first light-emitting unit and the intermediate layer over the lower electrode. | 04-17-2014 |
20140291674 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A substrate having an insulating surface is prepared; a stacked film including a first oxide semiconductor layer and a second oxide semiconductor layer is formed over the substrate; a mask layer is formed over part of the stacked film and then dry etching treatment is performed, so that the stacked film is removed, with a region provided with the mask layer remaining, and a reaction product is formed on a side surface of the remaining stacked film; the reaction product is removed by wet etching treatment after removal of the mask layer; a source electrode and a drain electrode are formed over the stacked film; and a third oxide semiconductor layer, a gate insulating film, and a gate electrode are stacked and formed in this order over the stacked film, and the source electrode and the drain electrode. | 10-02-2014 |
20150069374 | Light-Emitting Module and Light-Emitting Device - Provided is a light-emitting module from which light with uniform brightness can be extracted. Further, provided is a beautiful light-emitting module in which Newton's rings are not observed. The light-emitting module includes a first substrate, a light-emitting element formed on one surface side of the first substrate, a second substrate, a conductive spacer maintaining the gap between the first substrate and the second substrate, and a space in which the light-emitting element is sealed between the first substrate and the second substrate. Further, the pressure in the space is lower than or equal to the atmospheric pressure. Furthermore, the conductive spacer is electrically connected to the second electrode in a position overlapping with a partition provided over the first substrate so as to reduce a voltage drop occurring in the second electrode. | 03-12-2015 |
20150255534 | SEMICONDUCTOR DEVICE - A method for forming an oxide that can be used as a semiconductor of a transistor or the like is provided. In particular, a method for forming an oxide with fewer defects such as grain boundaries is provided. One embodiment of the present invention is a semiconductor device including an oxide semiconductor, an insulator, and a conductor. The oxide semiconductor includes a region overlapping with the conductor with the insulator therebetween. The oxide semiconductor includes a crystal grain with an equivalent circle diameter of 1 nm or more and a crystal grain with an equivalent circle diameter less than 1 nm. | 09-10-2015 |
20150263140 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a transistor with high field-effect mobility, a transistor having stable electrical characteristics, a transistor having a low off-state current, or a semiconductor device including the transistor. A method for manufacturing a semiconductor device including a first conductor, a first insulator over the first conductor, a first semiconductor over the first insulator, a second semiconductor over the first semiconductor, a second conductor and a third conductor over the second semiconductor, a third semiconductor over the second semiconductor, the second conductor, and the third conductor, a second insulator over the third semiconductor, and a fourth conductor over the second insulator. In the method, formation of layers is performed without exposure to the air. | 09-17-2015 |
Patent application number | Description | Published |
20080199172 | PICKUP APPARATUS - An image pickup apparatus, for controlling actual flash amount at the time of exposure based on an amount of reflected light from a predetermined metering region of a screen, comprises a first screen dividing section for dividing the screen into a first region, constituting a candidate for the metering region, and a second region other than that by comparing first feature data of image data that has been acquired by performing pre-flash before actual flash and second feature data of image data taken without performing pre-flash, a second screen dividing section for dividing the screen into a third region, being a region of an image having a predetermined feature, and a fourth region other than that, an image evaluation section for evaluating whether to include in the metering region or remove from the metering region based on different evaluation criteria according to whether the image of the third region or the fourth region belongs to the first region, or belongs to the second region, and a flash amount control section for controlling actual flash amount based on reflected light amount from regions that have been included in the metering region by the image evaluation section. | 08-21-2008 |
20150237262 | IMAGE PICKUP APPARATUS AND IMAGE PICKUP METHOD - Provided is an image pickup apparatus including an image pickup device, an AE control section, an image pickup control section that makes the image pickup device perform shooting, an EVF for image observation by looking thereinto, and an electronic display section, the electronic display section and the EVF alternatively displaying an image, wherein in exposure control, the AE control section sets a first exposure condition that is the same as an exposure condition for capturing image data for recording when the image is displayed on the electronic display section, and sets a second exposure condition that is different from the first exposure condition when the image is displayed on the EVF. | 08-20-2015 |
20150319360 | IMAGE PROVIDING APPARATUS, IMAGE DISPLAY DEVICE, IMAGING SYSTEM, IMAGE DISPLAY SYSTEM, AND IMAGE PROVIDING METHOD - An image providing apparatus includes: a plurality of auxiliary imaging units that have shooting ranges partially overlapping one another, and each of which images a subject to generate auxiliary image data; a provider communication unit; a provider communication control unit that receives, from the portable device, via the provider communication unit, transmission request information requesting the image providing apparatus to transmit composite image data; and an image synthesizing unit that generates, based on the transmission request information, composite image data by combining the auxiliary image data respectively generated by two or more of the plurality of auxiliary imaging units. The provider communication control unit transmits, via the provider communication unit, the composite image data to the portable device. | 11-05-2015 |