Tuan, TW
Chih-Wei Tuan, Kuei Shan Hsiang TW
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20130108083 | AUDIO PROCESSING SYSTEM AND ADJUSTING METHOD FOR AUDIO SIGNAL BUFFER | 05-02-2013 |
20130113874 | BIT RATE CONTROL APPARATUS AND METHOD THEREOF - A bit rate control apparatus applied in a video conference system is provided. The apparatus has a bit rate recording unit, configured to update a current bit rate; a bit rate reducing unit, configured to receive at least one event parameter and the current bit rate, and determine whether an event flag corresponding to the event parameters occurs; and a bit rate increasing unit, configured to increase the current bit rate periodically, wherein when the event flag occurs, the bit rate reducing unit reduces the current bit rate. | 05-09-2013 |
Chi-Shen Tuan, Hsinchu City TW
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20120043555 | LIQUID FLUORESCENT COMPOSITION AND LIGHT EMITTING DEVICE - The invention provides a liquid fluorescent composition. The liquid fluorescent composition includes at least (a) 0.001-2 parts by weight of a fluorescent material; and (b) 100 parts by weight of a cyclic solvent having a boiling point above 100° C. The invention also provides a light emitting device containing the above liquid fluorescent composition. | 02-23-2012 |
Chi-Shen Tuan, Jhubei City TW
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20100021622 | Apparatus and method for forming multilayer polymer thin film - Apparatus and method for forming multilayer polymer thin film. The method uses a solution container with a gap to prevent the huge amount of solution from directly falling on the first layer. Then the wet film is formed by moving the container with the thin film thickness is decided by the distance between the gap and the substrate. The wet film is dried in a very short time by the heater therefore there is no time for the second solvent to dissolve the first layer. The method can effectively achieve the large-area and multilayer structure in organic devices through solution processing. | 01-28-2010 |
Chi-Shen Tuan, Hsinchu TW
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20090015840 | MINIATURE SURFACE PLASMON RESONANCE SENSOR CHIP - The present invention provides a miniature surface plasmon resonance sensor chip that produces a plane light source with an organic optoelectronic material by an electro-luminescence method and excites a surface plasmon resonance wave to observe a signal variation at the surface of a sensor chip caused by the combining condition of surface bio-molecules and provide a more accurate miniature sensor in conformity with micro-channel. | 01-15-2009 |
20090142876 | INK COMPOSITION AND FABRICATION METHOD FOR COLOR CONVERSION FILM - An ink composition of a color conversion film is disclosed. The ink composition includes a fluorescent polymer (Formula I, II, III), an aromatic transparent unsaturated resin containing a phenyl or fluorene functional group (Formula IV, V), and a solvent of a cyclic compound, wherein the molecular structure of the aromatic transparent unsaturated resin is compatible to that of the fluorescent polymer. The invention further provides a fabrication method of a color conversion film including dispensing the disclosed ink composition on a substrate, and curing the ink composition to form the color conversion film. | 06-04-2009 |
Chi-Shen Tuan, Zhubei City TW
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20130139726 | FUNCTIONALIZED SOYBEAN COMPOUND, AND COATING COMPOSITION EMPLOYING THE SAME - The disclosure provides a functionalized soybean compound, and a coating composition employing the same. The functionalized soybean compound has the chemical structure represented below: | 06-06-2013 |
Chi-Yun Tuan, Chu-Nan TW
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20100035380 | Method for fabricating package structure of stacked chips - The invention relates to a method for fabricating a package structure of stacked chips, comprising the following steps: firstly, providing a substrate; attaching a first chip and a second chip on the upper surface of the substrate, in which the second chip is stacked on the upper side of the first chip; then connecting a first bonding wire between a second solder pad of the second chip and a first region of a first solder pad of the first chip; and connecting a second bonding wire between a second region of the first solder pad of the first chip and the metal contact of the substrate, whereby the invention is capable of tremendously reducing the volume as a whole, effectively solving the problem of having much bonding wire circuit, and reducing the volume and quantity occupied by the solder pads on the substrate, thereby reducing complexity of the circuit layout on the substrate. | 02-11-2010 |
Hao-Jan Tuan, Jhongli City TW
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20130149883 | ELECTRICAL CONNECTOR - An electrical connector includes a connector body including a holder base and positioning members mounted in respective vertical insertion slots in the holder base, conducting terminals positioned in the holder base with respective mounting portions thereof fastened to the positioning members, press members respectively fastened to the positioning members and suspending above the conducting terminals for holding down a flexible printed circuit board on front contact portions of the conducting terminals, and a swivel cover coupled to the holder base and the press members and biasable relative to the holder base and the press member between a horizontal close position and a vertical open position. | 06-13-2013 |
Hao-Jan Tuan, Taoyuan County TW
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20130109201 | ELECTRICAL POWER CONNECTOR | 05-02-2013 |
20130109224 | ELECTRICAL POWER CONNECTOR | 05-02-2013 |
20130109239 | ELECTRICAL POWER CONNECTOR | 05-02-2013 |
20130109241 | ELECTRICAL POWER CONNECTOR | 05-02-2013 |
Hsiang-Lin Tuan, Taipei City TW
Hsiao Chin Tuan, Judong County TW
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20100219463 | QUASI-VERTICAL STRUCTURE FOR HIGH VOLTAGE MOS DEVICE - A semiconductor device provides a high breakdown voltage and a low turn-on resistance. The device includes: a substrate; a buried n+ layer disposed in the substrate; an n-epi layer disposed over the buried n+ layer; a p-well disposed in the n-epi layer; a source n+ region disposed in the p-well and connected to a source contact on one side; a first insulation layer disposed on top of the p-well and the n-epi layer; a gate disposed on top of the first insulation layer; and a metal electrode extending from the buried n+ layer to a drain contact, wherein the metal electrode is insulated from the n-epi layer and the p-well using by a second insulation layer. | 09-02-2010 |
20110079846 | HIGH VOLTAGE DEVICES, SYSTEMS, AND METHODS FOR FORMING THE HIGH VOLTAGE DEVICES - A high voltage (HV) device includes a gate dielectric structure over a substrate. The gate dielectric structure has a first portion and a second portion. The first portion has a first thickness and is over a first well region of a first dopant type in the substrate. The second portion has a second thickness and is over a second well region of a second dopant type. The first thickness is larger than the second thickness. A gate electrode is disposed over the gate dielectric structure. A metallic layer is over and coupled with the gate electrode. The metallic layer extends along a direction of a channel under the gate dielectric structure. At least one source/drain (S/D) region is disposed within the first well region of the first dopant type. | 04-07-2011 |
20110220995 | Semiconductor Device Having Multi-Thickness Gate Dielectric - A semiconductor device is provided that, in an embodiment, is in the form of a high voltage MOS (HVMOS) device. The device includes a semiconductor substrate and a gate structure formed on the semiconductor substrate. The gate structure includes a gate dielectric which has a first portion with a first thickness and a second portion with a second thickness. The second thickness is greater than the first thickness. A gate electrode is disposed on the first and second portion. In an embodiment, a drift region underlies the second portion of the gate dielectric. A method of fabricating the same is also provided. | 09-15-2011 |
20110241114 | HIGH VOLTAGE MOS TRANSISTOR - A high voltage metal-oxide-semiconductor laterally diffused device (HV LDMOS) and a method of making it are provided in this disclosure. The device includes a semiconductor substrate, a gate structure formed on the substrate, a source and a drain formed in the substrate on either side of the gate structure, a first doped well formed in the substrate, and a second doped well formed in the first well. One portion of the second well surrounds the source and the other portion of the second well extends laterally from the first portion in the first well. | 10-06-2011 |
20110248383 | ELECTROSTATIC DISCHARGE (ESD) PROTECTION CIRCUIT - An electrostatic discharge (ESD) protection circuit includes at least one bipolar transistor. At least one isolation structure is disposed in a substrate. The at least one isolation structure is configured to electrically isolate two terminals of the at least one bipolar transistor. At least one diode is electrically coupled with the at least one bipolar transistor, wherein a junction interface of the at least one diode is disposed adjacent the at least one isolation structure. | 10-13-2011 |
20110260245 | Cost Effective Global Isolation and Power Dissipation For Power Integrated Circuit Device - An integrated circuit device and method for fabricating the integrated circuit device is disclosed. In an embodiment, an apparatus includes a substrate having a first surface and a second surface, the second surface being opposite the first surface; a first device and a second device overlying the substrate; and an isolation structure that extends through the substrate from the first surface to the second surface and between the first device and the second device. | 10-27-2011 |
20110298045 | SELF-ALIGNED CONTACT FOR TRENCH MOSFET - The process methods and structures mentioned above for creating a trench MOSFET enables self-aligned contacts to be formed to allow decreasing pitch size for trench MOSFET. The self-aligned contacts are formed by etching exposed silicon areas without using lithographical mask and alignment. As a result, the allowance for alignment can be saved and the pitch size can be decreased. | 12-08-2011 |
20120061681 | MECHANISM OF FORMING SIC CRYSTALLINE ON SI SUBSTRATES TO ALLOW INTEGRATION OF GAN AND SI ELECTRONICS - The mechanisms of forming SiC crystalline regions on Si substrate described above enable formation and integration of GaN-based devices and Si-based devices on a same substrate. The SiC crystalline regions are formed by implanting carbon into regions of Si substrate and then annealing the substrate. An implant-stop layer is used to cover the Si device regions during formation of the SiC crystalline regions. | 03-15-2012 |
20130140667 | LOCALIZED CARRIER LIFETIME REDUCTION - A semiconductor structure includes a substrate, a first power device and a second power device in the substrate, at least one isolation feature between the first and second power device, and a trapping feature adjoining the at least one isolation feature in the substrate. | 06-06-2013 |
20130240982 | QUASI-VERTICAL STRUCTURE FOR HIGH VOLTAGE MOS DEVICE - A semiconductor device which includes a buried layer having a first dopant type disposed in a substrate. The semiconductor device further includes a second layer having the first dopant type over the buried layer, wherein a dopant concentration of the buried layer is higher than a dopant concentration of the second layer. The semiconductor device further includes a first well of a second dopant type disposed in the second layer and a first source region of the first dopant type disposed in the first well and connected to a source contact on one side. The semiconductor device further includes a gate disposed on top of the well and the second layer and a metal electrode extending from the buried layer to a drain contact, wherein the metal electrode is insulated from the second layer and the first well by an insulation layer. | 09-19-2013 |
20140273376 | SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF - A semiconductor arrangement and method of formation are provided. A method of semiconductor formation includes using a single photoresist to mask off an area where low voltage devices are to be formed as well as gate structures of high voltage devices while performing high energy implants for the high voltage devices. Another method of semiconductor fabrication includes performing high energy implants for high voltage devices through a patterned photoresist where the photoresist is patterned prior to forming gate structures for high voltage devices and prior to forming gate structures for low voltage devices. After the high energy implants are performed, subsequent processing is performed to form high voltage devices and low voltage devices. High voltage device and low voltage devices are thus formed in a CMOS process without need for additional masks. | 09-18-2014 |
20140284706 | QUASI-VERTICAL STRUCTURE HAVING A SIDEWALL IMPLANTATION FOR HIGH VOLTAGE MOS DEVICE - A semiconductor device includes a buried layer having a first dopant type in a substrate. The semiconductor device includes a first layer having the first dopant type over the buried layer. The semiconductor device includes at least one first well of a second dopant type disposed in the first layer. The semiconductor device includes an implantation region of the second dopant type in a sidewall of the first layer, wherein the implantation region is below the at least one first well. The semiconductor device includes a first source region disposed in the at least one first well; and at least one gate disposed on top of the first well and the first layer. The semiconductor device includes a metal electrode extending from the buried layer to a drain contact, wherein the metal electrode is insulated from the first layer and the at least one first well by an insulation layer. | 09-25-2014 |
20150311140 | SEMICONDUCTOR STRUCTURE AND FABRICATING METHOD THEREOF - A semiconductor structure and a method for fabricating the same are provided. The semiconductor structure includes a wafer substrate having a top surface and a bottom surface, and a conductive pillar in the wafer substrate defined by a deep trench insulator through the top surface and the bottom surface of the wafer substrate. The method for fabricating the semiconductor structure includes following steps. A deep trench is formed from a top surface of a wafer substrate to define a conductive region in the wafer substrate. The conductive region is doped with a dopant. The deep trench is filled with an insulation material to form a deep trench insulator. And the wafer substrate is thinned from a bottom surface of the wafer substrate to expose the deep trench insulator and isolate the conductive region to form a conductive pillar. | 10-29-2015 |
Hsiao-Chin Tuan, Jhudong County TW
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20130146893 | SIC CRYSTALLINE ON SI SUBSTRATES TO ALLOW INTEGRATION OF GAN AND SI ELECTRONICS - A silicon substrate with a GaN-based device and a Si-based device on the silicon substrate is provided. The silicon substrate includes the GaN-based device on a SiC crystalline region. The SiC crystalline region is formed in the silicon substrate. The silicon substrate also includes the Si-based device on a silicon region, and the silicon region is next to the SiC crystalline region on the silicon substrate. | 06-13-2013 |
20130277736 | SELF-ALIGNED CONTACT FOR TRENCH MOSFET - A trench metal oxide semiconductor field effect transistor (MOSFET) includes an epitaxial layer over a substrate a first trench in the epitaxial layer and a second trench in the epitaxial layer. A depth of the first trench is different from a depth of the second trench. The trench MOSFET further includes a source region surrounding the self-aligned source contact, wherein the source region is convex-shaped. The trench MOSFET further includes a self-aligned source contact between the first trench and the second trench; wherein the self-aligned source contact is connected to the source region. | 10-24-2013 |
Hsiao-Chin Tuan, Taowan TW
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20110156217 | POWER DEVICES HAVING REDUCED ON-RESISTANCE AND METHODS OF THEIR MANUFACTURE - A method for forming a support structure for supporting and handling a semiconductor wafer containing vertical FETs formed at the front surface thereof is provided. In one embodiment, a semiconductor wafer is provided having a front surface and a rear surface, wherein the front surface comprises one or more dies separated by dicing lines. The wafer is thinned to a predetermined thickness. A plurality of patterned metal features are formed on a thinned rear surface to provide support for the wafer, wherein each of the plurality of patterned metal features covers substantially one die, leaving the dicing lines substantially uncovered. The wafer is thereafter diced along the dicing lines to separate the one or more dies for later chip packaging. | 06-30-2011 |
20110163376 | HIGH VOLTAGE DEVICES AND METHODS OF FORMING THE HIGH VOLTAGE DEVICES - A high voltage (HV) device includes a well region of a first dopant type disposed in a substrate. A first well region of a second dopant type is disposed in the well region of the first dopant type. An isolation structure is at least partially disposed in the well region of the first dopant type. A first gate electrode is disposed over the isolation structure and the first well region of the second dopant type. A second well region of the second dopant type is disposed in the well region of the first dopant type. The second well region of the second dopant type is spaced from the first well region of the second dopant type. A second gate electrode is disposed between and over the first well region of the second dopant type and the second well region of the second dopant type. | 07-07-2011 |
Hsiao-Chin Tuan, Judong Township TW
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20130134512 | Power MOSFETs and Methods for Forming the Same - A power MOSFET includes a semiconductor region extending from a top surface of a semiconductor substrate into the semiconductor substrate, wherein the semiconductor region is of a first conductivity type. A gate dielectric and a gate electrode are disposed over the semiconductor region. A drift region of a second conductivity type opposite the first conductivity type extends from the top surface of the semiconductor substrate into the semiconductor substrate. A dielectric layer has a portion over and in contact with a top surface of the drift region. A conductive field plate is over the dielectric layer. A source region and a drain region are on opposite sides of the gate electrode. The drain region is in contact with the first drift region. A bottom metal layer is over the field plate | 05-30-2013 |
20140167127 | Memory Devices and Methods of Manufacture Thereof - Memory devices and methods of manufacture thereof are disclosed. In one embodiment, a memory device includes a transistor having a gate disposed over a workpiece. The transistor includes a source region and a drain region disposed in the workpiece proximate the gate. The memory device includes an erase gate having a tip portion that extends towards the workpiece. The erase gate is coupled to the gate of the transistor. | 06-19-2014 |
Hsing-Chien Tuan, Miao-Li County TW
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20140002778 | LIQUID-CRYSTAL DISPLAY | 01-02-2014 |
Hsing-Yu Tuan, Hsinchu TW
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20120063990 | METHOD FOR FORMING GRANULAR POLYNARY NANO COMPOUND - The invention discloses a method for forming granular polynary nano compound, which comprises the steps of (S | 03-15-2012 |
20140363471 | METHOD OF INDUCING AUTOPHAGY AND ACTIVATING TOLL-LIKE RECEPTOR - A method of inducing autophagy in a cell is achieved by contacting the cell with graphene oxide (GO) in an amount effective to induce autophagy in the cell, wherein the cell expresses at least one of TLR-4 (Toll-like receptor 4) and TLR-9 (Toll-like receptor 9). Differences between autophagy triggered by GO and other conventional agonists such as rapamycin have been observed. GO may activate autophagy in some cells that may not be triggered by rapamycin. The cell reveals no apparent apoptosis after treatment of the graphene oxide. A method of activating a Toll-like receptor in a cell is also herein provided. | 12-11-2014 |
20150157659 | METHOD OF INDUCING AUTOPHAGY AND ACTIVATING TOLL-LIKE RECEPTOR - A method of inducing autophagy in a cell is achieved by contacting the cell with graphene oxide (GO) in an amount effective to induce autophagy in the cell, wherein the cell expresses at least one of TLR-4 (Toll-like receptor 4) and TLR-9 (Toll-like receptor 9). Differences between autophagy triggered by GO and other conventional agonists such as rapamycin have been observed. GO may activate autophagy in some cells that may not be triggered by rapamycin. The cell reveals no apparent apoptosis after treatment of the graphene oxide. A method of activating a Toll-like receptor in a cell is also herein provided. | 06-11-2015 |
20150190423 | METHOD OF POTENTIATING AN ANTITUMOR IMMUNE RESPONSE - A method of inducing autophagy in a cell is achieved by contacting the cell with graphene oxide (GO) in an amount effective to induce autophagy in the cell, wherein the cell expresses at least one of TLR-4 (Toll-like receptor 4) and TLR-9 (Toll-like receptor 9). Differences between autophagy triggered by GO and other conventional agonists such as rapamycin have been observed. GO may activate autophagy in some cells that may not be triggered by rapamycin. The cell reveals no apparent apoptosis after treatment of the graphene oxide. A method of method of potentiating an antitumor immune response is also herein provided. | 07-09-2015 |
20150333334 | LITHIUM ION BATTERY USING COPPER NANOWIRE FABRIC-BASED CURRENT COLLECTOR - A lithium ion battery using a copper nanowire fabric-based current collector comprises an anode, a cathode and a separation unit. The anode has a first current collector and an active material attached to the first current collector. The first current collector includes a copper nanowire fabric. The copper nanowire fabric is in form of a plate, and the active material is attached to the first current collector. The cathode has a second current collector and a lithium compound attached to the second current collector and releasing or absorbing lithium ions. The separation unit is arranged between the anode and the cathode and includes an electrolyte allowing lithium ions to move between the anode and the cathode. The anode has much less weight and further higher energy density than the conventional anode using copper foil as the first current collector. | 11-19-2015 |
Ronald Tuan, Nantou City TW
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20110290753 | FOLDABLE WATER BOTTLE - A foldable water bottle has a base, a folding body and a handle device. The folding body is made of silica gel, is mounted on the base and has a connecting ring, a folding segment and a neck. The folding segment is formed on and protrudes from the connecting ring and has multiple folding rings. The neck is formed on the folding segment and has a spout and two inserting mounts. The handle device is detachably connected to the folding body and has an inserting handle and a lid. The inserting handle is connected securely to the neck and has a handle mount and a grip. The lid is connected to the inserting handle and is used to close an opening top of the neck. | 12-01-2011 |
Ronald Tuan, Nantou County TW
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20140110422 | FOLDABLE FOOD CONTAINER - A foldable food container includes a container body which is made of silicone material and formed with a receiving chamber and an upper open end, and a cover which is engaged on the top peripheral edge cover. A reinforced frame is built in a top peripheral edge of the open end of the container body, and on the top peripheral edge is provided at least one elastic nip portion. The reinforced frame is located below the peripheral edge of the cover, and a peripheral edge of the cover is engaged in the at least one nip portion of the top peripheral edge and pushed against the top peripheral edge of the container body by the nip portion, so that the open end of the contain body is sealed with the cover in an airtight manner. | 04-24-2014 |
20150102035 | SEALING RING - A sealing ring is an elastic annular member with an engaging groove for insertion of an insertion member. The engaging groove includes a sealing surface and an opposite abutting surface which is inclined from the bottom of the engaging groove toward the open end of the engaging groove, so that the open end of the engaging groove is narrower than the bottom of the engaging groove. When the insertion member is inserted in the engaging groove, the abutting surface and the sealing surface will transmit pressure to make the abutting surface of the abutting portion and the sealing surface of the sealing lip of the sealing ring are pressed against two sides of the inserted insertion member. Therefore, the sealing performance of the sealing ring is improved. | 04-16-2015 |
Shu-Jen Tuan, Taichung City TW
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20130315873 | PESTICIDE COMPOSITION FOR SHORTENING THE VIRUS LETHAL TIME - The present invention is related to a pesticide composition for shortening the virus lethal time that comprises 0.01-75% of a ryanodine receptor insecticide or a diamides insecticide and 10 | 11-28-2013 |
20150272128 | PESTICIDE COMPOSITION FOR SHORTENING THE VIRUS LETHAL TIME - The present invention provides a method of shortening pesticidal time of the baculovirus to pest, comprising: (1) preparing a pesticide composition; (2) diluting the pesticide composition 100-3000 times; and (3) spraying the diluted pesticide composition on third or older instars in fields; wherein the pesticide composition comprises: (a) a ryanodine receptor insecticide or a diamides insecticide and (b) baculovirus, wherein the concentration of the ryanodine receptor insecticide or the diamides insecticide is 0.01-75% and the concentration of the nucleopolyhedrovirus is 10 | 10-01-2015 |
Ting-Yu Tuan, Taipei City TW
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20100285128 | SPACE FILLED DRUG RELEASE STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A space filled drug release structure and a method of manufacturing the same are disclosed. The structure is composed of a highly water-absorbing polymeric matrix and drug particles dispersed in the matrix. The matrix has pores and passages interconnecting the pores together. Because some water is present in the matrix, gastric acid can easily penetrate into the matrix to reach each drug particle. The surface of each drug particle is therefore possible to contact with the gastric acid. The drug releasing rate is therefore fast. Such structure is helpful for those drugs with low dissolution ability in the gastric acid. | 11-11-2010 |
Tsung-Fan Tuan, Zhunan Town TW
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20090111109 | Genes relating to gastric cancer metastasis - The disclosure provides polynucleotides and polypeptides associated with gastric cancer cells, particularly those having a tendency to metastasize. Also provided are methods and kits for detecting, diagnosing, and/or monitoring metastatic gastric cancer cells. | 04-30-2009 |
Tsung-Tyng Tuan, Hsinchu City TW
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20120249791 | ADAPTIVE SURROUNDING VIEW MONITORING APPARATUS AND METHOD THEREOF - An adaptive surrounding view monitoring apparatus and a method thereof are disclosed, in which the apparatus uses a steerable camera set to take horizontal images while sending the horizontal images to a control unit where they are combined into an image of 180-degree or 360-degree surrounding view. It is noted that the surrounding view image maybe an image of front surrounding view, an image of rear surrounding view or an image of ambient surrounding view relating to a vehicle, and using that, visual blind spot of a driver driving the vehicle can be eliminated and the field of vision is widened, and thereby, the probability of accident occurring is reduced. | 10-04-2012 |
Wei-Hsing Tuan, Taipei City TW
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20080291633 | PACKAGE ASSEMBLY WITH HEAT DISSIPATING STRUCTURE - A package assembly with a heat dissipating structure includes a thermal conductive lower metal layer, an electric insulating ceramic layer, a patterned upper metal layer and an electronic component. The electric insulating ceramic layer is disposed on and bonded to the thermal conductive lower metal layer. The patterned upper metal layer is disposed on and bonded to the electric insulating ceramic layer. The patterned upper metal layer has an opening from which the electric insulating ceramic layer is exposed. The electronic component is disposed in the opening of the patterned upper metal layer, mounted on the electric insulating ceramic layer through a thermally conductive adhesive or solder, and electrically connected to the patterned upper metal layer. | 11-27-2008 |
20090305073 | PLATINUM-FREE AND PALLADIUM-FREE CONDUCTIVE ADHESIVE AND ELECTRODE FORMED THEREBY - A platinum-free and palladium-free conductive adhesive includes silver particles, additive metal particles and a binder. Components of the additive metal particles are selected from the group consisting of tungsten, niobium, tantalum and molybdenum etc., and do not contain platinum and palladium. The binder adheres the silver particles and the additive metal particles together. A specific weight percentage of the additive metal particles in a mixture of the silver particles and the additive metal particles ranges from 1 to 70. The presence of the additive metal particles can suppress silver migration. An electrode formed by the conductive adhesive is also disclosed. | 12-10-2009 |
20100179050 | SINTERABLE BIOCERAMICS AND METHOD OF MANUFACTURING THE SAME - The present invention discloses a method that can improve the sintering ability of calcium sulfate. The material can be used as a bio-material. This method is prepared by pre-mixing +1 and/or +2 and/or +3 and/or +4 and/or +5 valence element and/or its chemical compounds which serves as a sintering additive to calcium sulfate. During sintering, the sintering additive may form a compound and/or a glass and/or a glass-ceramic to assist the densification of the calcium sulfate. The strength and biocompatibility of the specimen after sintering are satisfactory. | 07-15-2010 |
20100212942 | FULLY REFLECTIVE AND HIGHLY THERMOCONDUCTIVE ELECTRONIC MODULE AND METHOD OF MANUFACTURING THE SAME - A fully reflective and highly thermoconductive electronic module includes a metal bottom layer, a transparent ceramic layer and a patterned metal wiring layer. The metal bottom layer has a lower reflective surface. The transparent ceramic layer has an upper surface and a lower surface. The lower surface of the transparent ceramic layer is bonded to the lower reflective surface of the metal bottom layer. The metal wiring layer is bonded to the upper surface of the transparent ceramic layer. The lower reflective surface reflects a first light ray, transmitting through the transparent ceramic layer, to the upper surface of the transparent ceramic layer. A method of manufacturing the fully reflective and highly thermoconductive electronic module is also disclosed. | 08-26-2010 |
20100285128 | SPACE FILLED DRUG RELEASE STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A space filled drug release structure and a method of manufacturing the same are disclosed. The structure is composed of a highly water-absorbing polymeric matrix and drug particles dispersed in the matrix. The matrix has pores and passages interconnecting the pores together. Because some water is present in the matrix, gastric acid can easily penetrate into the matrix to reach each drug particle. The surface of each drug particle is therefore possible to contact with the gastric acid. The drug releasing rate is therefore fast. Such structure is helpful for those drugs with low dissolution ability in the gastric acid. | 11-11-2010 |
20120114966 | CERAMIC/METAL COMPOSITE STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A ceramic/metal composite structure includes an aluminum oxide substrate, an interface bonding layer and a copper sheet. The interface bonding layer is disposed on the aluminum oxide substrate. The copper sheet is disposed on the interface bonding layer. The interface bonding layer bonds the aluminum oxide substrate to the copper sheet. Some pores are formed near or in the interface bonding layer. A porosity of the interface bonding layer is substantially smaller than or equal to 25%. A method of manufacturing the ceramic/metal composite structure is also provided. | 05-10-2012 |
Wei-Hsing Tuan, Taipei TW
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20080200327 | BARIUM TITANATE SINGLE CRYSTAL AND PREPARATION METHOD THEREOF - The present invention provides a method of producing the barium titanate solid solution single crystals. The crystalline phase of the single crystal is hexagonal. The method of the present invention, a small quantity of metal oxide is added and dissolved into the barium titanate to form a solid solution. The metal oxides are used as single crystal growth aid; and the barium titanate single crystal can be prepared by using a pressureless sintering process composing of one or two stages of heat treatments that require no special expensive equipments, and thus the method can be used for the mass production of the single crystals. | 08-21-2008 |
20090088311 | BIO-MATERIAL AND METHOD OF PREPARATION THEREOF - A porous bio-material and a method of preparation thereof. The method includes the following steps. First, a body is formed by mixing a bio-ceramic powder, a highly water-absorbing natural organic material and a liquid. Then, the body is partially dried to form a machinable porous bio-material. The sizes of pores and porosity can be tailored by controlling the extent of drying so that the porous bio-material with acceptable strength can be obtained. | 04-02-2009 |
20120225769 | SINTERED CALCIUM SULFATE CERAMIC MATERIAL AND SINTERABLE CALCIUM SULFATE CERAMIC MATERIAL - A sintered calcium sulfate ceramic material includes a plurality of major phases of calcium sulfate solid solutions, and a plurality of reaction phases located at boundaries of the major phases. Each of the reaction phases may be selected from the group consisting of calcium silicate and calcium phosphate. A sinterable calcium sulfate ceramic material consisting of calcium sulfate and a sintering additive is also provided. The sintering additive comprises silica (SiO | 09-06-2012 |
Wei-Jei Tuan, Taipei TW
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20090168408 | Responsive luminous pad - A responsive luminous pad includes a luminous module ( | 07-02-2009 |
20100039243 | Light and sound module - A light and sound emitting module coupled to textile comprising: a control unit ( | 02-18-2010 |
20100039802 | Responsive led module unit - A responsive light emitting diode (LED) module unit includes a control unit ( | 02-18-2010 |
20100135021 | VIBRATING AND TWINKLING LED BACKLIGHTING DEVICE - A waterproof vibrating and twinkling LED backlighting device includes: a main body ( | 06-03-2010 |