Patent application number | Description | Published |
20100021273 | CONCRETE VACUUM CHAMBER - The present invention embodies processing systems and vacuum chambers equipped to process substrates for flat panel displays, solar cells, or other electronic devices. The processing system and/or the vacuum chambers as well as their components and supporting structure are constructed of less costly materials and in a more energy efficient manner than that of current large area substrate processing systems. In one embodiment, the processing system chamber bodies and their supporting structures are constructed of reinforced concrete. In one embodiment, system processing chambers include a vacuum tight lining disposed inside reinforced concrete chamber bodies. | 01-28-2010 |
20100037823 | SHOWERHEAD AND SHADOW FRAME - The present invention generally relates to a gas distribution showerhead and a shadow frame for an apparatus. By extending the corners of the gas distribution showerhead the electrode area may be expanded relative to the anode and thus, uniform film properties may be obtained. Additionally, the expanded corners of the gas distribution showerhead may have gas passages extending therethrough. In one embodiment, hollow cathode cavities may be present on the bottom surface of the showerhead without permitting gas to pass therethrough. The shadow frame in the apparatus may also have its corner areas extended out to enlarge the anode in the corner areas of the substrate being processed and thus, may lead to deposition of a material on the substrate having substantially uniform properties. | 02-18-2010 |
20100104754 | MULTIPLE GAS FEED APPARATUS AND METHOD - Embodiments of the present invention generally provide apparatus and methods for introducing process gases into a processing chamber at a plurality of locations. In one embodiment, a central region of a showerhead and corner regions of a showerhead are fed process gases from a central gas source with a first mass flow controller regulating the flow in the central region and a second mass flow controller regulating the flow in the corner regions. In another embodiment, a central region of a showerhead is fed process gases from a first gas source and corner regions of the showerhead are fed process gases from a second gas source. In another embodiment, a central region of a showerhead is fed process gases from a first gas source and each corner region of the showerhead is fed process gases from a separate gas source. By separately feeding process gases to different regions of the showerhead, the ratio and flow of process gases through the showerhead may be controlled to provide improved uniformity across the surface of a substrate. | 04-29-2010 |
20100112212 | ADJUSTABLE GAS DISTRIBUTION APPARATUS - Embodiments of the present invention generally provide apparatus and methods for altering the contour of a gas distribution plate within a process chamber without breaking vacuum conditions within the chamber. In one embodiment, a central support device adjusted to vary the height of a central region of a gas distribution plate with respect to the periphery of the gas distribution plate. In another embodiment, a plurality of central support devices is adjusted to vary the height of a central region of a gas distribution plate with respect to the periphery of the plate. In yet another embodiment, a plurality of central support devices and a plurality of mid-range support devices are adjusted to vary the height of certain regions of the gas distribution plate with respect to other regions of the gas distribution plate. In one embodiment, the contour of the gas distribution plate is altered based on changes detected within the process chamber. | 05-06-2010 |
20100136216 | GAS DISTRIBUTION BLOCKER APPARATUS - Embodiments of the present invention generally provide apparatus and methods for altering the flow and pressure differential of process gases supplied across a showerhead of a processing chamber to provide improved deposition uniformity across the surface of a substrate disposed therein. In one embodiment, a blocker plate is disposed between a backing plate and a showerhead. In one embodiment, the distance between the blocker plate and the showerhead is adjustable. In another embodiment, the blocker plate has a non-planar surface contour. In another embodiment, a regional blocker plate is disposed between a backing plate and a showerhead. In another embodiment, a central blocker plate and a peripheral blocker plate are disposed between a backing plate and a showerhead. | 06-03-2010 |
20100151127 | APPARATUS AND METHOD FOR PREVENTING PROCESS SYSTEM CONTAMINATION - Embodiments of the present invention generally provide apparatus and methods for preventing contamination within a processing system due to substrate breakage. In one embodiment, an acoustic detection mechanism is disposed on or within a process chamber to monitor conditions within the process chamber. In one embodiment, the acoustic detection mechanism detects conditions indicative of substrate breakage within the process chamber. In one embodiment, the acoustic detection mechanism detects conditions that are known to lead to substrate breakage within the process chamber. In one embodiment, the acoustic detection mechanism is combined with an optical detection mechanism. By early detection of substrate breakage or conditions known to lead to substrate breakage, the process chamber may be taken off line and repaired prior to contamination of the entire process system. | 06-17-2010 |
20100178137 | SYSTEMS, APPARATUS AND METHODS FOR MOVING SUBSTRATES - Systems, methods and apparatus are provided for moving substrates in electronic device manufacturing. In some aspects, end effectors having a base portion and at least three pads are provided. Each of the pads has a contact surface, and at least one of the contact surfaces has a curved shape. A substrate supported by the end effector may be moved at a relatively high lateral g-force without significant slipping relative to the pads. Additional aspects are provided. | 07-15-2010 |
20110033620 | COMPOUND LIFT PIN TIP WITH TEMPERATURE COMPENSATED ATTACHMENT FEATURE - A method and apparatus for a lift pin is described. In one embodiment, a lift pin head is described. The lift pin head includes a base member having a body made of a first material having a first coefficient of thermal expansion, and a tip disposed on the base member, the base member having a body made of a second material that is flexible at room temperature and having a second coefficient of thermal expansion, the first coefficient of thermal expansion being less than the second coefficient of thermal expansion. | 02-10-2011 |
20120171852 | REMOTE HYDROGEN PLASMA SOURCE OF SILICON CONTAINING FILM DEPOSITION - Methods for forming and treating a silicon containing layer in a thin film transistor structure or solar cell devices are provided. In one embodiment, a method for forming a silicon containing layer on a substrate includes providing a substrate into a processing chamber, providing a gas mixture having a silicon containing gas into the processing chamber, providing a hydrogen containing gas from a remote plasma source coupled to the processing chamber, applying a RF power less than 17.5 mWatt/cm | 07-05-2012 |
20130004681 | MINI BLOCKER PLATE WITH STANDOFF SPACERS - Embodiments of the present invention provide a plasma processing chamber having a mini blocker plate for delivering processing gas to a processing chamber and methods to use the mini blocker plate to improve uniformity. The blocker plate assembly comprising a mini blocker plate having a plurality of through holes, and two or more standoff spacers configured to position the mini blocker plate at a distance away from a blocker plate. | 01-03-2013 |
20130012030 | METHOD AND APPARATUS FOR REMOTE PLASMA SOURCE ASSISTED SILICON-CONTAINING FILM DEPOSITION - An apparatus and methods for depositing amorphous and microcrystalline silicon films during the formation of solar cells are provided. In one embodiment, a method and apparatus is provided for generating and introducing hydrogen radicals directly into a processing region of a processing chamber for reaction with a silicon-containing precursor for film deposition on a substrate. In one embodiment, the hydrogen radicals are generated by a remote plasma source and directly introduced into the processing region via a line of sight path to minimize the loss of energy by the hydrogen radicals prior to reaching the processing region. | 01-10-2013 |
20130101241 | SUBSTRATE SUPPORT BUSHING - A bushing assembly for supporting a substrate within a processing chamber is generally provided. In one aspect, the bushing assembly comprises a tubular body having an outer perimeter and an aperture extending therethrough, a first ring having a first inner edge, the first ring disposed in the aperture in an upper portion of the tubular body, and a second ring having a second inner edge, the second ring disposed in the aperture in a lower portion of the tubular body. In another aspect, the first inner edge has a first radius of curvature, and the second inner edge has a second radius of curvature. In another aspect, a first inner edge diameter, a second inner edge diameter, the first radius of curvature, and the second radius of curvature are selected such that a support pin extending through the aperture contacts the bushing assembly on at most two points. | 04-25-2013 |
20130284721 | METHOD AND APPARATUS FOR SUBSTRATE SUPPORT WITH MULTI-ZONE HEATING - Methods and substrate processing systems are provided for controlling substrate heating efficiency and generating a desired temperature profile on the surface of a substrate when the substrate is disposed on a substrate support surface of a substrate support assembly. The substrate support assembly is provided with minimum software control and hardware requirement and includes a heating element comprised of multiple heating elements sections. The heating element is connected to a power source for adjusting the temperature outputs of the multiple heating element sections and providing adjustable multi-heating zones and desired temperature distribution over the substrate support surface of the substrate support assembly within a process chamber. | 10-31-2013 |
20130287529 | METHOD AND APPARATUS FOR INDEPENDENT WAFER HANDLING - A substrate processing system with independent substrate placement capability to two or more substrate support assemblies is provided. Two different sets of fixed-length lift pins are disposed on two or more substrate support lift pin assemblies of two or more process chambers, where the length of each lift pin in one process chamber is different from the length of each lift pin in another process chamber. The substrate processing system includes simplified mechanical substrate support lift pin mechanisms and minimum accessory parts cooperating with a substrate transfer mechanism (e.g., a transfer robot) for efficient and independent loading, unloading, and transfer of one or more substrates between two or more processing regions in a twin chamber or between two or more process chambers. A method for positioning one or more substrates to be loaded, unloaded, or processed independently or simultaneously in two or more processing regions or process chambers is provided. | 10-31-2013 |
20140272211 | APPARATUS AND METHODS FOR REDUCING PARTICLES IN SEMICONDUCTOR PROCESS CHAMBERS - Embodiments of the present disclosure generally provide various apparatus and methods for reducing particles in a semiconductor processing chamber. One embodiment of present disclosure provides a vacuum screen assembly disposed over a vacuum port to prevent particles generated by the vacuum pump from entering substrate processing regions. Another embodiment of the present disclosure provides a perforated chamber liner around a processing region of the substrate. Another embodiment of the present disclosure provides a gas distributing chamber liner for distributing a cleaning gas around the substrate support under the substrate supporting surface. | 09-18-2014 |
20140366953 | PARTICLE REDUCTION VIA THROTTLE GATE VALVE PURGE - Methods and apparatus for particle reduction in throttle gate valves used in substrate process chambers are provided herein. In some embodiments, a gate valve for use in a process chamber includes a body having an opening disposed therethrough from a first surface to an opposing second surface of the body; a pocket extending into the body from a sidewall of the opening; a gate movably disposed within the pocket between a closed position that seals the opening and an open position that reveals the opening and disposes the gate completely within the pocket; and a plurality of gas ports disposed in the gate valve configured to direct a gas flow into a portion of the gate valve fluidly coupled to the opening. | 12-18-2014 |
20140374024 | APPARATUS FOR REMOVING PARTICLES FROM A TWIN CHAMBER PROCESSING SYSTEM - Embodiments of an apparatus for removing particles from a twin chamber processing system are provided herein. In some embodiments, an apparatus for removing particles from a twin chamber processing system includes a remote plasma system; and a plurality of conduits fluidly coupling the remote plasma system to each process chamber of a twin chamber processing system to provide a plasma to an exhaust volume of each process chamber, wherein each conduit of the plurality of conduits has an outlet disposed along a boundary of the respective exhaust volumes. | 12-25-2014 |