Patent application number | Description | Published |
20140131286 | LARGE-SCALE ELECTRICITY-LESS DISINFECTION OF FLUENT WATER - A system for disinfecting a water sample includes a pipe having an inlet for engaging a source of the water sample, a storage reservoir connected to an outlet of the pipe for holding the water sample, an array of photovoltaic cells coupled to the pipe for converting solar radiation into a current, and an array of light emitting diodes coupled to the pipe and powered by the current, wherein the array of light emitting diodes emits a germicidal wavelength of radiation. A method for disinfecting a fluent water sample includes generating a current using an array of photovoltaic cells, using the current to power an array of light emitting diodes, wherein the array of light emitting diodes emits a germicidal wavelength of radiation, and exposing the fluent water sample to the radiation while transporting the fluent water sample from a source to a storage reservoir. | 05-15-2014 |
20140131287 | ELECTRICITY-LESS WATER DISINFECTION - Disinfecting a sample of water includes generating a current using an array of photovoltaic cells, using the current to power an array of light emitting diodes, wherein the array of light emitting diodes emits a germicidal wavelength of radiation, and exposing the sample of water to the radiation. Another method for disinfecting a sample of water includes placing the sample of water within a container, wherein the container includes an array of photovoltaic cells encircling an exterior wall of the container and an array of light emitting diodes encircling an interior wall of the container, placing the container in a location exposed to solar radiation, converting the solar radiation to a current using the array of photovoltaic cells, and powering the array of light emitting diodes using the current, wherein the array of light emitting diodes emits a germicidal wavelength of radiation sufficient to disinfect the sample of water. | 05-15-2014 |
20140131591 | ELECTRICITY-LESS WATER DISINFECTION - A system for disinfecting a sample of water includes a container for holding the sample of water, an array of photovoltaic cells coupled to the container for converting solar radiation into a current, and an array of light emitting diodes coupled to the container and powered by the current, wherein the array of light emitting diodes emits a germicidal wavelength of radiation. Another system for disinfecting a sample of water includes a container for holding the sample of water, an array of photovoltaic cells encircling an exterior wall of the container, for converting solar radiation into a current, and an array of light emitting diodes encircling an interior wall of the container and powered by the current, wherein the array of light emitting diodes emits a germicidal wavelength of radiation. | 05-15-2014 |
20140151757 | SUBSTRATE-TEMPLATED EPITAXIAL SOURCE/DRAIN CONTACT STRUCTURES - Single crystalline semiconductor fins are formed on a single crystalline buried insulator layer. After formation of a gate electrode straddling the single crystalline semiconductor fins, selective epitaxy can be performed with a semiconductor material that grows on the single crystalline buried insulator layer to form a contiguous semiconductor material portion. The thickness of the deposited semiconductor material in the contiguous semiconductor material portion can be selected such that sidewalls of the deposited semiconductor material portions do not merge, but are conductively connected to one another via horizontal portions of the deposited semiconductor material that grow directly on a horizontal surface of the single crystalline buried insulator layer. Simultaneous reduction in the contact resistance and parasitic capacitance for a fin field effect transistor can be provided through the contiguous semiconductor material portion and cylindrical contact via structures. | 06-05-2014 |
20140264446 | III-V FINFETS ON SILICON SUBSTRATE - A method for forming fin field effect transistors includes forming a dielectric layer on a silicon substrate, forming high aspect ratio trenches in the dielectric layer down to the substrate, the high aspect ratio including a height to width ratio of greater than about 1:1 and epitaxially growing a non-silicon containing semiconductor material in the trenches using an aspect ratio trapping process to form fins. The one or more dielectric layers are etched to expose a portion of the fins. A barrier layer is epitaxially grown on the portion of the fins, and a gate stack is formed over the fins. A spacer is formed around the portion of the fins and the gate stack. Dopants are implanted into the portion of the fins. Source and drain regions are grown over the fins using a non-silicon containing semiconductor material. | 09-18-2014 |
20140264607 | III-V FINFETS ON SILICON SUBSTRATE - A method for forming fin field effect transistors includes forming a dielectric layer on a silicon substrate, forming high aspect ratio trenches in the dielectric layer down to the substrate, the high aspect ratio including a height to width ratio of greater than about 1:1 and epitaxially growing a non-silicon containing semiconductor material in the trenches using an aspect ratio trapping process to form fins. The one or more dielectric layers are etched to expose a portion of the fins. A barrier layer is epitaxially grown on the portion of the fins, and a gate stack is formed over the fins. A spacer is formed around the portion of the fins and the gate stack. Dopants are implanted into the portion of the fins. Source and drain regions are grown over the fins using a non-silicon containing semiconductor material. | 09-18-2014 |
20140332900 | LOW EXTENSION RESISTANCE III-V COMPOUND FIN FIELD EFFECT TRANSISTOR - A gate stack including a gate dielectric and a gate electrode is formed over at least one compound semiconductor fin provided on an insulating substrate. The at least one compound semiconductor fin is thinned employing the gate stack as an etch mask. Source/drain extension regions are epitaxially deposited on physically exposed surfaces of the at least one semiconductor fin. A gate spacer is formed around the gate stack. A raised source region and a raised drain region are epitaxially formed on the source/drain extension regions. The source/drain extension regions are self-aligned to sidewalls of the gate stack, and thus ensure a sufficient overlap with the gate electrode. Further, the combination of the source/drain extension regions and the raised source/drain regions provides a low-resistance path to the channel of the field effect transistor. | 11-13-2014 |
20140335665 | LOW EXTENSION RESISTANCE III-V COMPOUND FIN FIELD EFFECT TRANSISTOR - A gate stack including a gate dielectric and a gate electrode is formed over at least one compound semiconductor fin provided on an insulating substrate. The at least one compound semiconductor fin is thinned employing the gate stack as an etch mask. Source/drain extension regions are epitaxially deposited on physically exposed surfaces of the at least one semiconductor fin. A gate spacer is formed around the gate stack. A raised source region and a raised drain region are epitaxially formed on the source/drain extension regions. The source/drain extension regions are self-aligned to sidewalls of the gate stack, and thus ensure a sufficient overlap with the gate electrode. Further, the combination of the source/drain extension regions and the raised source/drain regions provides a low-resistance path to the channel of the field effect transistor. | 11-13-2014 |
20140339502 | ELEMENTAL SEMICONDUCTOR MATERIAL CONTACT FOR HIGH INDIUM CONTENT InGaN LIGHT EMITTING DIODES - A vertical stack including a p-doped GaN portion, a multi-quantum-well including indium gallium nitride layers, and an n-doped transparent conductive material portion is formed on an insulator substrate. A dielectric material liner is formed around the vertical stack, and is patterned to physically expose a surface of the p-doped GaN portion. A selective low temperature epitaxy process is employed to deposit a semiconductor material including at least one elemental semiconductor material on the physically exposed surfaces of the p-doped GaN portion, thereby forming an elemental semiconductor material portion. The selective low temperature epitaxy process can be performed at a temperature lower than 600° C., thereby limiting diffusion of materials within the multi-quantum well and avoiding segregation of indium within the multi-quantum well. The light-emitting diode can generate a radiation of a wide range including blue and green lights in the visible wavelength range. | 11-20-2014 |
20140339503 | ELEMENTAL SEMICONDUCTOR MATERIAL CONTACT FOR GAN-BASED LIGHT EMITTING DIODES - A vertical stack including a p-doped GaN portion, a multi-quantum-well, and an n-doped GaN portion is formed on an insulator substrate. The p-doped GaN portion may be formed above, or below, the multi-quantum-well. A dielectric material liner is formed around the vertical stack, and is patterned to physically expose a top surface of the p-doped GaN portion. A selective low temperature epitaxy process is employed to deposit a semiconductor material including at least one elemental semiconductor material on the physically exposed surfaces of the p-doped GaN portion, thereby forming an elemental semiconductor material portion. Metallization is performed on a portion of the elemental semiconductor material portions to form an electrical contact structure that provides effective electrical contact to the p-doped GaN portion through the elemental semiconductor material portion. The elemental semiconductor material portion spreads electrical current between the electrical contact structure and the p-doped GaN portion. | 11-20-2014 |
20140342485 | ELEMENTAL SEMICONDUCTOR MATERIAL CONTACT FOR HIGH INDIUM CONTENT InGaN LIGHT EMITTING DIODES - A vertical stack including a p-doped GaN portion, a multi-quantum-well including indium gallium nitride layers, and an n-doped transparent conductive material portion is formed on an insulator substrate. A dielectric material liner is formed around the vertical stack, and is patterned to physically expose a surface of the p-doped GaN portion. A selective low temperature epitaxy process is employed to deposit a semiconductor material including at least one elemental semiconductor material on the physically exposed surfaces of the p-doped GaN portion, thereby forming an elemental semiconductor material portion. The selective low temperature epitaxy process can be performed at a temperature lower than 600° C., thereby limiting diffusion of materials within the multi-quantum well and avoiding segregation of indium within the multi-quantum well. The light-emitting diode can generate a radiation of a wide range including blue and green lights in the visible wavelength range. | 11-20-2014 |
20140342486 | ELEMENTAL SEMICONDUCTOR MATERIAL CONTACT FOR GaN-BASED LIGHT EMITTING DIODES - A vertical stack including a p-doped GaN portion, a multi-quantum-well, and an n-doped GaN portion is formed on an insulator substrate. The p-doped GaN portion may be formed above, or below, the multi-quantum-well. A dielectric material liner is formed around the vertical stack, and is patterned to physically expose a top surface of the p-doped GaN portion. A selective low temperature epitaxy process is employed to deposit a semiconductor material including at least one elemental semiconductor material on the physically exposed surfaces of the p-doped GaN portion, thereby forming an elemental semiconductor material portion. Metallization is performed on a portion of the elemental semiconductor material portions to form an electrical contact structure that provides effective electrical contact to the p-doped GaN portion through the elemental semiconductor material portion. The elemental semiconductor material portion spreads electrical current between the electrical contact structure and the p-doped GaN portion. | 11-20-2014 |
20140346566 | CONTACT METALLURGY FOR SELF-ALIGNED HIGH ELECTRON MOBILITY TRANSISTOR - A metallization scheme employing a first refractory metal barrier layer, a Group IIIA element layer, a second refractory metal barrier layer, and an oxidation-resistant metallic layer is employed to form a source region and a drain region that provide electrical contacts to a compound semiconductor material layer. The first and second refractory metal barrier layer are free of nitrogen, and thus, do not introduce additional nitrogen into the compound semiconductor layer, while allowing diffusion of the Group IIIA element to form locally doped regions underneath the source region and the drain region. Ohmic contacts may be formed at a temperature as low as about 500° C. This enables fabrication of FET whose source and drain are self-aligned to the gate. | 11-27-2014 |
20140346567 | ELEMENTAL SEMICONDUCTOR MATERIAL CONTACTFOR HIGH ELECTRON MOBILITY TRANSISTOR - Portions of a top compound semiconductor layer are recessed employing a gate electrode as an etch mask to form a source trench and a drain trench. A low temperature epitaxy process is employed to deposit a semiconductor material including at least one elemental semiconductor material in the source trench and the drain trench. Metallization is performed on physically exposed surfaces of the elemental semiconductor material portions in the source trench and the drain trench by depositing a metal and inducing interaction with the metal and the at least one elemental semiconductor material. A metal semiconductor alloy of the metal and the at least one elemental semiconductor material can be performed at a temperature lower than 600° C. to provide a high electron mobility transistor with a well-defined device profile and reliable metallization contacts. | 11-27-2014 |
20140349449 | ELEMENTAL SEMICONDUCTOR MATERIAL CONTACT FOR HIGH ELECTRON MOBILITY TRANSISTOR - Portions of a top compound semiconductor layer are recessed employing a gate electrode as an etch mask to form a source trench and a drain trench. A low temperature epitaxy process is employed to deposit a semiconductor material including at least one elemental semiconductor material in the source trench and the drain trench. Metallization is performed on physically exposed surfaces of the elemental semiconductor material portions in the source trench and the drain trench by depositing a metal and inducing interaction with the metal and the at least one elemental semiconductor material. A metal semiconductor alloy of the metal and the at least one elemental semiconductor material can be performed at a temperature lower than 600° C. to provide a high electron mobility transistor with a well-defined device profile and reliable metallization contacts. | 11-27-2014 |
20150021662 | III-V SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED CONTACTS - A method including forming a III-V compound semiconductor-containing heterostructure, forming a gate dielectric having a dielectric constant greater than 4.0 positioned within a gate trench, the gate trench formed within the III-V compound semiconductor-containing heterostructure, and forming a gate conductor within the gate trench on top of the gate dielectric, the gate conductor extending above the III-V compound semiconductor heterostructure. The method further including forming a pair of sidewall spacers along opposite sides of a portion of the gate conductor extending above the III-V compound semiconductor-containing heterostructure and forming a pair of source-drain contacts self-aligned to the pair of sidewall spacers. | 01-22-2015 |
20150054092 | LOCAL INTERCONNECTS BY METAL-III-V ALLOY WIRING IN SEMI-INSULATING III-V SUBSTRATES - A structure and method of producing a semiconductor structure including a semi-insulating semiconductor layer, a plurality of isolated devices formed over the semi-insulating semiconductor layer, and a metal-semiconductor alloy region formed in the semi-insulating semiconductor layer, where the metal-semiconductor alloy region electrically connects two or more of the isolated devices. The metal-semiconductor alloy region has a metal concentration in a range from 1×10 | 02-26-2015 |
20150060997 | SUSPENDED BODY FIELD EFFECT TRANSISTOR - A semiconductor fin including a vertical stack, from bottom to top, of a second semiconductor material and a first semiconductor material is formed on a substrate. A disposable gate structure straddling the semiconductor fin is formed. A source region and a drain region are formed employing the disposable gate structure as an implantation mask, At least one semiconductor shell layer or a semiconductor cap layer can be formed as an etch stop structure. A planarization dielectric layer is subsequently formed. A gate cavity is formed by removing the disposable gate structure. A portion of the second semiconductor material is removed selective to the first semiconductor material within the gate cavity so that a middle portion of the semiconductor fin becomes suspended over the substrate. A gate dielectric layer and a gate electrode are sequentially formed. The gate electrode laterally surrounds a body region of a fin field effect transistor. | 03-05-2015 |
20150061013 | LOW INTERFACIAL DEFECT FIELD EFFECT TRANSISTOR - A disposable gate structure straddling a semiconductor fin is formed. A source region and a drain region are formed employing the disposable gate structure as an implantation mask. A planarization dielectric layer is formed such that a top surface of the planarization dielectric layer is coplanar with the disposable gate structure. A gate cavity is formed by removing the disposable gate structure. An epitaxial cap layer is deposited on physically exposed semiconductor surfaces of the semiconductor fin by selective epitaxy. A gate dielectric layer is formed on the epitaxial cap layer, and a gate electrode can be formed by filling the gate cavity. The epitaxial cap layer can include a material that reduces the density of interfacial defects at an interface with the gate dielectric layer. | 03-05-2015 |
20150076604 | FIELD EFFECT TRANSISTOR INCLUDING A RECESSED AND REGROWN CHANNEL - At least one doped semiconductor material region is formed over a crystalline insulator layer. A disposable gate structure and a planarization dielectric layer laterally surrounding the disposable gate structure are formed over the at least one doped semiconductor material region. The disposable gate structure is removed selective to the planarization dielectric layer to form a gate cavity. Portions of the at least one doped semiconductor material region are removed from underneath the gate cavity. Remaining portions of the at least one doped semiconductor material region constitute a source region and a drain region. A channel region is epitaxially grown from a physically exposed surface of the crystalline insulator layer. The channel region has a uniform thickness that can be less than the thickness of the source region and the drain region, and is epitaxially aligned to the crystalline insulator layer. | 03-19-2015 |
Patent application number | Description | Published |
20130007373 | REGION BASED CACHE REPLACEMENT POLICY UTILIZING USAGE INFORMATION - A method, apparatus, and system for replacing at least one cache region selected from a plurality of cache regions, wherein each of the regions is composed of a plurality of blocks is disclosed. The method includes applying a first algorithm to the plurality of cache regions to limit the number of potential candidate regions to a preset value, wherein the first algorithm assesses the ability of a region to be replaced based on properties of the plurality of blocks associated with that region; and designating at least one of the limited potential candidate regions as a victim based region level information associated with each of the limited potential candidate regions. | 01-03-2013 |
20130073811 | REGION PRIVATIZATION IN DIRECTORY-BASED CACHE COHERENCE - A system and method for region privatization in a directory-based cache coherence system is disclosed. The system and method includes receiving a request from a requesting node for at least one block in a region, allocating a new entry for the region based on the request for the block, requesting from the memory controller the data for the region be sent to the requesting node, receiving a subsequent request for a block within the region, determining that any blocks of the region that are cached are also cached at the requesting node, and privatizing the region at the requesting node. | 03-21-2013 |
20130097385 | DUAL-GRANULARITY STATE TRACKING FOR DIRECTORY-BASED CACHE COHERENCE - A system and method of providing directory cache coherence are disclosed. The system and method may include tracking the coherence state of at least one cache block contained within a region using a global directory, providing at least one region level sharing information about the least one cache block in the global directory, and providing at least one block level sharing information about the at least one cache block in the global directory. The tracking of the provided at least one region level sharing information and the provided at least one block level sharing information may organize the coherence state of the at least one cache block and the region. | 04-18-2013 |
20140208064 | Virtual Memory Management System with Reduced Latency - A computer system using virtual memory provides hybrid memory access either through a conventional translation between virtual memory and physical memory using a page table possibly with a translation lookaside buffer, or a high-speed translation using a fixed offset value between virtual memory and physical memory. Selection between these modes of access may be encoded into the address space of virtual memory eliminating the need for a separate tagging operation of specific memory addresses. | 07-24-2014 |
20150067296 | I/O MEMORY MANAGEMENT UNIT PROVIDING SELF INVALIDATED MAPPING - A memory management unit for 110 devices uses page table entries to translate virtual addresses to physical addresses. The page table entries include removal rules allowing the I/O memory management unit to delete page table entries without CPU involvement significantly reducing the CPU overhead involved in virtualized I/O data transactions. | 03-05-2015 |
Patent application number | Description | Published |
20090124832 | OLIGOAMINE COMPOUNDS AND DERIVATIVES THEREOF FOR CANCER THERAPY - Oligoamine compounds with anti-cancer and anti-proliferative activity are provided, as well as methods for making and using the compounds. The compounds are shown to be active against prostate cancer cell lines and against prostate cancer tumors in mice. The compounds are also useful in treatment of breast cancer and other cancers. | 05-14-2009 |
20100297262 | PHARMACEUTICALLY ACTIVE COMPOSITIONS COMPRISING OXIDATIVE STRESS MODULATORS (OSM), NEW CHEMICAL ENTITIES, COMPOSITIONS AND USES - Described herein are pharmaceutical compositions and medicaments, and methods of using such pharmaceutical compositions and medicaments in the treatment of inflammation and cancer. | 11-25-2010 |
20110059922 | MITOCHONDRIA TARGETED CATIONIC ANTI-OXIDANT COMPOUNDS FOR PREVENTION, THERAPY OR TREATMENT OF HYPER-PROLIFERATIVE DISEASE, NEOPLASIAS AND CANCERS - The inventions disclosed include methods of treating cancers and related neoplasias, especially prostate cancer, with pharmaceutically acceptable salts comprising lipophilic cation moieties linked to nitroxide or linked to hydroxylamine anti-oxidant groups. | 03-10-2011 |
20110091931 | Methods and Kits for Determining Oxygen Free Radical (OFR) Levels in Animal and Human Tissues as a Prognostic Marker for Cancer and Other Pathophysiologies - Described herein are methods and techniques for the determination of reactive oxygen species in resected animal and human tissues. Also described herein are methods for determining the efficacy of anti-oxidant, oxidative stress modulatory, or anti-inflammatory drug chemoprevention or chemotherapy for the prevention and/or therapy of chronically inflamed and/or progressive cancers and pathophysiologies. | 04-21-2011 |
20130210772 | ANDROGEN INDUCED OXIDATIVE STRESS INHIBITORS - Described herein are pharmaceutical compositions and medicaments, and methods of using such pharmaceutical compositions and medicaments in the treatment of cancer. | 08-15-2013 |
20130338110 | MITOCHONDRIA TARGETED CATIONIC ANTI-OXIDANT COMPOUNDS FOR PREVENTION, THERAPY OR TREATMENT OF HYPER-PROLIFERATIVE DISEASE, NEOPLASIAS AND CANCERS - The inventions disclosed include methods of treating cancers and related neoplasias, especially prostate cancer, with pharmaceutically acceptable salts comprising lipophilic cation moieties linked to nitroxide or linked to hydroxylamine anti-oxidant groups. | 12-19-2013 |
20140179798 | N1,N4-BIS(BUTA-1,3-DIENYL)BUTANE-1,4-DIAMINE PHARMACEUTICAL COMPOSITIONS AND METHODS THEREOF - N1,N4-bis(buta-1,3-dienyl)butane-1,4-diamine dihydrochloride (also referred to as MDL 72,527 and N,N′-di-2,3-butadienyl-1,4-butanediamine dihydrochloride), or salts or solvates thereof, its use as an antioxidant, its use in preventing and/or treating prostate cancer in male humans, and its use in reducing the concentration of reactive oxygen species in human prostate gland tissue or any other body tissue, and methods of making the compound thereof are disclosed. Other disclosed methods include inhibiting acetyl polyamine oxidase in human prostate tissue or other human body tissue comprising administering a therapeutic amount of N,N′-bis(2,3-butadienyl)-1,4-butanediamine or a salt or solvate thereof to the human, and a method of determining oxidative stress in human prostate tissue or other human or animal body tissue comprising measuring a ratio of oxidized 2′,7′-dichlorodihydrofluorescein diacetate fluorescence:DNA fluorescence and hydroethidine dye fluorescence ex vivo or in vivo. | 06-26-2014 |
Patent application number | Description | Published |
20080213848 | METHODS FOR INCREASING THE PRODUCTION OF ETHANOL FROM MICROBIAL FERMENTATION - A stable continuous method for producing ethanol from the anaerobic bacterial fermentation of a gaseous substrate containing at least one reducing gas involves culturing in a fermentation bioreactor anaerobic, acetogenic bacteria in a liquid nutrient medium; supplying the gaseous substrate to the bioreactor; and manipulating the bacteria in the bioreactor by reducing the redox potential, or increasing the NAD(P)H TO NAD(P) ratio, in the fermentation broth after the bacteria achieves a steady state and stable cell concentration in the bioreactor. The free acetic acid concentration in the bioreactor is maintained at less than 5 g/L free acid. This method allows ethanol to be produced in the fermentation broth in the bioreactor at a productivity of greater than 10 g/L per day. Both ethanol and acetate are produced in a ratio of ethanol to acetate ranging from 1:1 to 20:1. | 09-04-2008 |
20120077240 | METHODS FOR INCREASING THE PRODUCTION OF ETHANOL FROM MICROBIAL FERMENTATION - A stable continuous method for producing ethanol from the anaerobic bacterial fermentation of a gaseous substrate containing at least one reducing gas involves culturing in a fermentation bioreactor anaerobic, acetogenic bacteria in a liquid nutrient medium; supplying the gaseous substrate to the bioreactor; and manipulating the bacteria in the bioreactor by reducing the redox potential, or increasing the NAD(P)H TO NAD(P) ratio, in the fermentation broth after the bacteria achieves a steady state and stable cell concentration in the bioreactor. The free acetic acid concentration in the bioreactor is maintained at less than 5 g/L free acid. This method allows ethanol to be produced in the fermentation broth in the bioreactor at a productivity of greater than 10 g/L per day. Both ethanol and acetate are produced in a ratio of ethanol to acetate ranging from 1:1 to 20:1. | 03-29-2012 |
20120083022 | Methods for Increasing the Production of Ethanol from Microbial Fermentation - A stable continuous method for producing ethanol from the anaerobic bacterial fermentation of a gaseous substrate containing at least one reducing gas involves culturing in a fermentation bioreactor anaerobic, acetogenic bacteria in a liquid nutrient medium; supplying the gaseous substrate to the bioreactor; and manipulating the bacteria in the bioreactor by reducing the redox potential, or increasing the NAD(P)H TO NAD(P) ratio, in the fermentation broth after the bacteria achieves a steady state and stable cell concentration in the bioreactor. The free acetic acid concentration in the bioreactor is maintained at less than 5 g/L free acid. This method allows ethanol to be produced in the fermentation broth in the bioreactor at a productivity of greater than 10 g/L per day. Both ethanol and acetate are produced in a ratio of ethanol to acetate ranging from 1:1 to 20:1. | 04-05-2012 |
20120088282 | METHODS FOR INCREASING THE PRODUCTION OF ETHANOL FROM MICROBIAL FERMENTATION - A stable continuous method for producing ethanol from anaerobic fermentation of a gaseous substrate containing at least one reducing gas in a liquid nutrient medium; supplying the gaseous substrate to the bioreactor. The free acetic acid concentration in the bioreactor is maintained at less than 5 g/L free acid. This method allows ethanol to be produced in the fermentation broth in the bioreactor at a productivity of greater than 10 g/L per day. Both ethanol and acetate are produced in a ratio of ethanol to acetate ranging from 1:1 to 20:1. | 04-12-2012 |
20120088283 | METHODS FOR INCREASING THE PRODUCTION OF ETHANOL FROM MICROBIAL FERMENTATION - A stable continuous method for producing ethanol from anaerobic fermentation of a gaseous substrate containing at least one reducing gas in a liquid nutrient medium; supplying the gaseous substrate to the bioreactor. The free acetic acid concentration in the bioreactor is maintained at less than 5 g/L free acid. This method allows ethanol to be produced in the fermentation broth in the bioreactor at a productivity of greater than 10 g/L per day. Both ethanol and acetate are produced in a ratio of ethanol to acetate ranging from 1:1 to 20:1. | 04-12-2012 |
20120088284 | METHODS FOR INCREASING THE PRODUCTION OF ETHANOL FROM MICROBIAL FERMENTATION - A stable continuous method for producing ethanol from anaerobic fermentation of a gaseous substrate containing at least one reducing gas in a liquid nutrient medium; supplying the gaseous substrate to the bioreactor. The free acetic acid concentration in the bioreactor is maintained at less than 5 g/L free acid. This method allows ethanol to be produced in the fermentation broth in the bioreactor at a productivity of greater than 10 g/L per day. Both ethanol and acetate are produced in a ratio of ethanol to acetate ranging from 1:1 to 20:1. | 04-12-2012 |
20120094346 | METHODS FOR INCREASING THE PRODUCTION OF ETHANOL FROM MICROBIAL FERMENTATION - A stable continuous method for producing ethanol from the anaerobic bacterial fermentation of a gaseous substrate containing at least one reducing gas involves culturing in a fermentation bioreactor anaerobic, acetogenic bacteria in a liquid nutrient medium; supplying the gaseous substrate to the bioreactor; and manipulating the bacteria in the bioreactor by reducing the redox potential, or increasing the NAD(P)H TO NAD(P) ratio, in the fermentation broth after the bacteria achieves a steady state and stable cell concentration in the bioreactor. The free acetic acid concentration in the bioreactor is maintained at less than 5 g/L free acid. This method allows ethanol to be produced in the fermentation broth in the bioreactor at a productivity of greater than 10 g/L per day. Both ethanol and acetate are produced in a ratio of ethanol to acetate ranging from 1:1 to 20:1. | 04-19-2012 |
20120094349 | Methods for Increasing the Production of Ethanol from Microbial Fermentation - A stable continuous method for producing ethanol from the anaerobic bacterial fermentation of a gaseous substrate containing at least one reducing gas involves culturing in a fermentation bioreactor anaerobic, acetogenic bacteria in a liquid nutrient medium; supplying the gaseous substrate to the bioreactor; and manipulating the bacteria in the bioreactor by reducing the redox potential, or increasing the NAD(P)H TO NAD(P) ratio, in the fermentation broth after the bacteria achieves a steady state and stable cell concentration in the bioreactor. The free acetic acid concentration in the bioreactor is maintained at less than 5 g/L free acid. This method allows ethanol to be produced in the fermentation broth in the bioreactor at a productivity of greater than 10 g/L per day. Both ethanol and acetate are produced in a ratio of ethanol to acetate ranging from 1:1 to 20:1. | 04-19-2012 |
20120115198 | METHODS FOR INCREASING THE PRODUCTION OF ETHANOL FROM MICROBIAL FERMENTATION - A stable continuous method for producing ethanol from anaerobic fermentation of a gaseous substrate containing at least one reducing gas in a liquid nutrient medium; supplying the gaseous substrate to the bioreactor. The free acetic acid concentration in the bioreactor is maintained at less than 5 g/L free acid. This method allows ethanol to be produced in the fermentation broth in the bioreactor at a productivity of greater than 10 g/L per day. Both ethanol and acetate are produced in a ratio of ethanol to acetate ranging from 1:1 to 20:1. | 05-10-2012 |
20120122173 | Methods for Increasing the Production of Ethanol from Microbial Fermentation - A stable continuous method for producing ethanol from the anaerobic bacterial fermentation of a gaseous substrate containing at least one reducing gas involves culturing in a fermentation bioreactor anaerobic, acetogenic bacteria in a liquid nutrient medium; supplying the gaseous substrate to the bioreactor; and manipulating the bacteria in the bioreactor by reducing the redox potential, or increasing the NAD(P)H TO NAD(P) ratio, in the fermentation broth after the bacteria achieves a steady state and stable cell concentration in the bioreactor. The free acetic acid concentration in the bioreactor is maintained at less than 5 g/L free acid. This method allows ethanol to be produced in the fermentation broth in the bioreactor at a productivity of greater than 10 g/L per day. Both ethanol and acetate are produced in a ratio of ethanol to acetate ranging from 1:1 to 20:1. | 05-17-2012 |
Patent application number | Description | Published |
20100102273 | AZEOTROPE-LIKE COMPOSITIONS COMPRISING TRANS-1-CHLORO-3,3,3-TRIFLUOROPROPENE - An azeotrope-like mixture consisting essentially of chlorotrifluoropropene and at least one component selected from the group consisting of pentane, hexane, methanol, and trans-1,2-dichloroethene. | 04-29-2010 |
20110144216 | COMPOSITIONS AND USES OF CIS-1,1,1,4,4,4-HEXAFLUORO-2-BUTENE - This invention relates to compositions, methods and systems having utility in numerous applications, and in particular, uses for compositions containing the compound cis-1,1,1,4,4,4-hexafluoro-2-butene (Z-HFO-1336mzzm), which has the following structure: | 06-16-2011 |
20110175015 | Azeotrope-Like Compositions Comprising Trans-1-Chloro-3,3,3-Trifluoropropene - An azeotrope-like mixture consisting essentially of chlorotrifluoropropene and at least one component selected from the group consisting of pentane, hexane, methanol, and trans-1,2-dichloroethene. | 07-21-2011 |
20130004435 | AZEOTROPE-LIKE COMPOSITIONS COMPRISING 1-CHLORO-3,3,3-TRIFLUOROPROPENE - The present invention relates, in part, to ternary azeotropic compositions and mixtures including chlorotrifluoropropene, methanol, and a third component selected from isohexane, trans-1,2-dichloroethylene, and petroleum ether. The present invention further relates to ternary azeotropic compositions and mixtures including chlorotrifluoropropene, cyclopentane, and a alcohol selected from methanol, ethanol, and isopropanol. | 01-03-2013 |
20130090280 | CLEANING COMPOSITIONS AND METHODS - The present invention relates, in part, to compositions including at least one hydrofluoro-olefin or hydrochlorofluoro-olefin solvent. Such compositions may optionally contain one or more alcohols or other co-solvent or agent and may be used to provide one or more cleaning applications. | 04-11-2013 |
20130109771 | AZEOTROPE-LIKE COMPOSITIONS INCLUDING CIS-1-CHLORO-3,3,3-TRIFLUOROPROPENE | 05-02-2013 |
20140206589 | AZEOTROPE-LIKE COMPOSITIONS COMPRISING 1-CHLORO-3,3,3-TRIFLUOROPROPENE - The present invention relates, in part, to binary azeotropic compositions and mixtures including chlorotrifluoropropene and petroleum ether and to ternary azeotropic compositions and mixtures including chlorotrifluoropropene, methanol, and a third component selected from isohexane, trans-1,2-dichloroethylene, and petroleum ether. The present invention further relates to ternary azeotropic compositions and mixtures including chlorotrifluoropropene, cyclopentane, and a alcohol selected from methanol, ethanol, and isopropanol. | 07-24-2014 |
20140346390 | Azeotrope-Like Compositions Comprising Trans-1-Chloro-3,3,3-Trifluoropropene - An azeotrope-like mixture consisting essentially of chlorotrifluoropropene and at least one component selected from the group consisting of pentane, hexane, methanol, and trans-1,2-dichloroethene. | 11-27-2014 |
Patent application number | Description | Published |
20120041257 | APPARATUS AND METHODS FOR SUPPORTING CARDIAC ISCHEMIC TISSUE - Apparatus and methods are disclosed for supporting ischemic tissue of the heart using scaffolds that may be placed within the heart percutaneously. A scaffold assembly may include a layer of biocompatible material detachably secured to a placement rod, such that the placement rod may be used to urge the layer of biocompatible material through a catheter to adjacent an area of ischemic tissue. Anchors may secure the layer of material to the myocardium. Multiple layers of biocompatible material may be placed in the ventricle separately to form the scaffold. In some embodiments, a scaffold is formed or reinforced by injecting a polymer, such as a visco-elastic foam, around an inflatable member inflated within a ventricle. | 02-16-2012 |
20120221072 | EXTRAVASCULAR NEUROMODULATION TO TREAT HEART FAILURE - Treatment of heart failure in a patient by electrically modulating both the sympathetic and parasympathetic autonomic cardiac nerve fibers that innervate the patient's heart at an extravascular site in the pericardial space of the heart. The extravascular site is any suitable single location inside the chest cavity that carries both sympathetic and parasympathetic cardiac nerves such as the cardiac plexus or the pericardial transverse sinus or any two separate extravascular sites with one site carrying predominantly sympathetic cardiac nerves and the other site carrying predominantly parasympathetic cardiac nerves for electrically modulating the balance of autonomic cardiac nerve control. Physiologic inputs from a neuromodulation system's own sensors or from separate implanted or external cardiovascular hemodynamic sensor systems can be used for closed loop control over the balance of sympathetic and parasympathetic cardiac autonomic effects on the patient's cardiac function in real time response to chronic and transient physiologic needs. | 08-30-2012 |
20120265283 | REPERFUSION INJURY DEVICES - A catheter configured for performing reperfusion by alternatively occluding a vessel so as to prevent fluid flow and removing that occlusion to allow fluid flow is described. A first catheter includes an outer member and a retractable valve to allow and prevent fluid flow in the vessel. A second catheter includes a sheathed expansion member that can be deployed and recaptured to prevent and allow, respectively, fluid flow. A third catheter includes an angioplasty balloon to open a vessel occlusion, in which an occlusion balloon is used to allow and disallow fluid flow. A fourth catheter includes an expandable member for providing mechanical plunging action to urge thrombotic material to a more distal location. A fifth catheter includes an accessory catheter that can be used to perform reperfusion with another catheter. A sixth catheter includes an inner balloon within an outer balloon configured to perform reperfusion. | 10-18-2012 |
20130211379 | CATHETER ASSEMBLY AND METHOD OF TREATING A VASCULAR DISEASE - A catheter assembly comprises a catheter including a catheter wall and a lumen extending lengthwise of the wall. The wall has inner and outer surfaces. The wall includes plural openings that extend through the wall and communicate with the lumen. An elongated hollow needle includes a proximal end portion and a distal end portion. The needle is movable in the lumen to move the distal end portion between the openings. The distal end portion is directed radially outward so as to extend into an adjacent opening. The distal end portion has a configuration that stores potential energy when in the lumen. The potential energy is converted to kinetic energy to produce movement of the proximal end portion as the distal end portion moves from the inner surface of the catheter wall across an edge of an opening. The movement of the proximal end portion is haptically perceptible. | 08-15-2013 |
20130245669 | EMBOLIC FILTER DEVICES, SYSTEMS, AND METHODS FOR CAPTURING EMBOLI DURING MEDICAL PROCEDURES - One aspect of the present disclosure relates to an embolic filter device configured for placement in a blood vessel to capture emboli during a medical procedure. The embolic filter device can include an expandable frame member and a membrane. The expandable frame member can include a radial support member operably connected to first and second longitudinal struts, and an engaging portion extending between the first and second longitudinal struts. The engaging portion can be shaped and configured to temporarily receive, and sealingly mate with, a portion of an endovascular catheter during the medical procedure. The membrane can be securely connected to the frame member and define a collection chamber for captured emboli. The membrane can be configured to cover substantially all of the cross-sectional area of the blood vessel when the embolic filter device is deployed in the blood vessel. | 09-19-2013 |
20130338633 | Methods And Compositions For Treating Post-Cardial Infarction Damage - Methods and compositions for treating post-myocardial infarction damage are herein disclosed. In some embodiments, a carrier with a treatment agent may be fabricated. The carrier can be formulated from a bioerodable, sustained-release substance. The resultant loaded carrier may then be suspended in at least one component of a two-component matrix system for simultaneous delivery to a post-myocardial infarction treatment area. | 12-19-2013 |
20130338634 | Methods And Compositions For Treating Post-Cardial Infarction Damage - Methods and compositions for treating post-myocardial infarction damage are herein disclosed. In some embodiments, a carrier with a treatment agent may be fabricated. The carrier can be formulated from a bioerodable, sustained-release substance. The resultant loaded carrier may then be suspended in at least one component of a two-component matrix system for simultaneous delivery to a post-myocardial infarction treatment area. | 12-19-2013 |
20140017200 | MODIFIED TWO-COMPONENT GELATION SYSTEMS, METHODS OF USE AND METHODS OF MANUFACTURE - Compositions, methods of manufacture and methods of treatment for post-myocardial infarction are herein disclosed. In some embodiments, the composition includes at least two components. In one embodiment, a first component can include a first functionalized polymer and a substance having at least one cell adhesion site combined in a first buffer at a pH of approximately 6.5. A second component can include a second buffer in a pH of between about 7.5 and 9.0. A second functionalized polymer can be included in the first or second component. In some embodiments, the composition can include at least one cell type and/or at least one growth factor. In some embodiments, the composition(s) of the present invention can be delivered by a dual bore injection device to a treatment area, such as a post-myocardial infarct region. | 01-16-2014 |
20140199377 | MULTIPLE GROWTH FACTOR COMPOSITIONS, METHODS OF FABRICATION, AND METHODS OF TREATMENT - Disclosed are compositions with sustained-release carriers associated with at least two different types of growth factors and methods of fabrication and treatments thereof. In some embodiments, simultaneous release of the growth factors may be preferred while in other embodiments, sequential release of the growth factors may be preferred. Application of at least two growth factors to an injury site, e.g., compromised cardiac tissue caused by, for example, myocardial infarction or ischemic heart failure, may better mimic and induce the complex growth factor signaling pathways necessary to improve cardiac function. When applied to a patient after a myocardial infarction or ischemic heart failure, multiple growth factors within a sustained-release carrier platform or platforms may cause a synergistic effect on injected cells intending to alleviate left ventricle remodeling. Methods of treatment include percutaneous, sub-xiphoid, and open chest methods using catheters and/or syringes. | 07-17-2014 |
Patent application number | Description | Published |
20110319529 | CELLULOSE ESTER/ELASTOMER COMPOSITIONS - A cellulose ester composition is provided comprising at least one cellulose ester and at least one additive selected from the group consisting of a compatibilizer, and a plasticizer. Processes for producing the cellulose ester composition are also provided. In another embodiment, a cellulose ester/elastomer composition is provided comprising at least one elastomer, at least one cellulose ester; and at least one additive; wherein the additive is at least one selected from the group consisting of a compatibilizer and a plasticizer. Processes for producing the cellulose ester/elastomer composition is also provided as well as articles comprising the cellulose ester/elastomer composition. | 12-29-2011 |
20110319530 | PROCESSES FOR MAKING CELLULOSE ESTATE/ELASTOMER COMPOSITIONS - A cellulose ester composition is provided comprising at least one cellulose ester and at least one additive selected from the group consisting of a compatibilizer, and a plasticizer. Processes for producing the cellulose ester composition are also provided. In another embodiment, a cellulose ester/elastomer composition is provided comprising at least one elastomer, at least one cellulose ester; and at least one additive; wherein the additive is at least one selected from the group consisting of a compatibilizer and a plasticizer. Processes for producing the cellulose ester/elastomer composition is also provided as well as articles comprising the cellulose ester/elastomer composition. | 12-29-2011 |
20110319531 | CELLULOSE ESTER COMPOSITIONS - A cellulose ester composition is provided comprising at least one cellulose ester and at least one additive selected from the group consisting of a compatibilizer, and a plasticizer. Processes for producing the cellulose ester composition are also provided. In another embodiment, a cellulose ester/elastomer composition is provided comprising at least one elastomer, at least one cellulose ester; and at least one additive; wherein the additive is at least one selected from the group consisting of a compatibilizer and a plasticizer. Processes for producing the cellulose ester/elastomer composition is also provided as well as articles comprising the cellulose ester/elastomer composition. | 12-29-2011 |
20110319532 | PROCESSES FOR MAKING CELLULOSE ESTER COMPOSITIONS - A cellulose ester composition is provided comprising at least one cellulose ester and at least one additive selected from the group consisting of a compatibilizer, and a plasticizer. Processes for producing the cellulose ester composition are also provided. In another embodiment, a cellulose ester/elastomer composition is provided comprising at least one elastomer, at least one cellulose ester; and at least one additive; wherein the additive is at least one selected from the group consisting of a compatibilizer and a plasticizer. Processes for producing the cellulose ester/elastomer composition is also provided as well as articles comprising the cellulose ester/elastomer composition. | 12-29-2011 |
20130131221 | CELLULOSE ESTER/ELASTOMER COMPOSITIONS - A cellulose ester composition is provided comprising at least one cellulose ester and at least one additive selected from the group consisting of a compatibilizer, and a plasticizer. Processes for producing the cellulose ester composition are also provided. In another embodiment, a cellulose ester/elastomer composition is provided comprising at least one elastomer, at least one cellulose ester; and at least one additive; wherein the additive is at least one selected from the group consisting of a compatibilizer and a plasticizer. Processes for producing the cellulose ester/elastomer composition is also provided as well as articles comprising the cellulose ester/elastomer composition. | 05-23-2013 |
20130150484 | CELLULOSE ESTERS IN PNEUMATIC TIRES - A tire component is provided comprising an elastomeric composition containing at least one non-fibril cellulose ester, at least one primary elastomer, and one or more fillers, wherein said composition exhibits a dynamic mechanical analysis (DMA) strain sweep modulus as measured at 5% strain and 30° C. of at least 1,450,000 Pa and a molded groove tear as measured according to ASTM D624 of at least 120 lbf/in. | 06-13-2013 |
20130150491 | CELLULOSE ESTERS IN HIGHLY-FILLED ELASTOMERIC SYSTEMS - An elastomeric composition is provided comprising at least one non-fibril cellulose ester, at least one non-nitrile primary elastomer, optionally a starch, and at least 70 parts per hundred rubber (phr) of one or more fillers, wherein the weight ratio of the cellulose ester to the starch is at least 3:1, wherein the cellulose ester is in the form of particles having an average diameter of not more than 10 μm. | 06-13-2013 |
20130150492 | PROCESS FOR DISPERSING CELLULOSE ESTERS INTO ELASTOMERIC COMPOSITIONS - A process to produce an elastomeric composition is provided. The process comprising:
| 06-13-2013 |
20130150493 | PROCESS FOR DISPERSING CELLULOSE ESTERS INTO ELASTOMERIC COMPOSITIONS - A cellulose ester concentrate is provided comprising at least one non-nitrile carrier elastomer and at least one non-fibril cellulose ester, wherein said cellulose ester concentrate comprises at least 15 weight percent of said cellulose ester. | 06-13-2013 |
20130150494 | CELLULOSE ESTERS IN PNEUMATIC TIRES - A tire component is provided comprising an elastomeric composition containing at least one non-fibril cellulose ester, at least one non-nitrile primary elastomer, optionally a starch, and at least 70 parts per hundred rubber (phr) of one or more fillers, wherein the weight ratio of the cellulose ester to the starch is at least 3:1, and wherein the cellulose ester is in the form of particles having an average diameter of not more than 10 μm. | 06-13-2013 |
20130150495 | PROCESS FOR DISPERSING CELLULOSE ESTERS INTO ELASTOMERIC COMPOSITIONS - A process to produce a cellulose ester concentrate is provided. The process comprising mixing at least one cellulose ester with one or more carrier elastomers to produce the cellulose ester concentrate, wherein at least a portion of the mixing occurs at a temperature that exceeds the Tg of the cellulose ester, wherein at least a portion of the mixing operates at a shear rate of at least 50 s | 06-13-2013 |
20130150496 | CELLULOSE ESTERS IN PNEUMATIC TIRES - A process for producing a tire component is provided. The process comprises: (a) blending at least one cellulose ester, at least one non-nitrile primary elastomer, and at least 70 phr of one or more fillers to produce an elastomeric composition, wherein at least a portion of the blending occurs at a temperature exceeding the Tg of the cellulose ester, wherein the elastomeric composition exhibits a Mooney viscosity at 100° C. as measured according to ASTM D1646 of not more than 110 AU; and (b) forming the tire component with the elastomeric composition. | 06-13-2013 |
20130150497 | CELLULOSE ESTERS IN HIGHLY-FILLED ELASTOMERIC SYSTEMS - A process to produce an elastomeric composition is provided. The process comprises blending at least one cellulose ester, at least one non-nitrile primary elastomer, and at least 70 phr of one or more fillers to produce the elastomeric composition, wherein at least a portion of the blending occurs at a temperature exceeding the Tg of said cellulose ester, and wherein the elastomeric composition exhibits a Mooney viscosity at 100° C. as measured according to ASTM D1646 of not more than 110 AU. | 06-13-2013 |
20130150498 | CELLULOSE ESTERS IN PNEUMATIC TIRES - A process for producing a tire component is provided. The process comprises blending an elastomeric composition containing at least one non-fibril cellulose ester, at least one primary elastomer, and one or more fillers, wherein the elastomeric composition exhibits a dynamic mechanical analysis (DMA) strain sweep modulus as measured at 5% strain and 30° C. of at least 1,450,000 Pa and a molded groove tear as measured according to ASTM D624 of at least 120 lbf/in. | 06-13-2013 |
20130150499 | CELLULOSE ESTERS IN HIGHLY-FILLED ELASTOMERIC SYSTEMS - A process to produce an elastomeric composition is provided. The process comprises blending at least one cellulose ester, at least one primary elastomer, and one or more fillers to produce an uncured elastomeric composition, wherein the blending occurs at a temperature exceeding the Tg of the cellulose ester and curing the uncured elastomeric composition to produce a cured elastomeric composition, wherein the cured elastomeric composition exhibits a dynamic mechanical analysis (DMA) strain sweep modulus of at least 1,450,000 Pa and a molded groove tear as measured according to ASTM D624 of at least 120 lbf/in. | 06-13-2013 |
20130150500 | PROCESS FOR DISPERSING CELLULOSE ESTERS INTO ELASTOMERIC COMPOSITIONS - An elastomeric composition is provided comprising at least one non-fibril cellulose ester, at least one carrier elastomer, and at least one primary elastomer, wherein the elastomeric composition exhibits a dynamic mechanical analysis (DMA) strain sweep modulus as measured at 5% strain and 30° C. of at least 1,450,000 Pa and a molded groove tear as measured according to ASTM D624 of at least 120 lbf/in. | 06-13-2013 |
20130150501 | CELLULOSE ESTERS IN HIGHLY-FILLED ELASTOMARIC SYSTEMS - An elastomeric composition is provided comprising at least one primary elastomer, one or more fillers, and at least one non-fibril cellulose ester, wherein the elastomeric composition exhibits a dynamic mechanical analysis (DMA) strain sweep modulus as measured at 5% strain and 30° C. of at least 1,450,000 Pa and a molded groove tear as measured according to ASTM D624 of at least 125 lbf/in. | 06-13-2013 |
Patent application number | Description | Published |
20130024929 | TRUST LEVEL ACTIVATION - An isolation execution environment provides an application with limited resources to execute an application. The application may require access to secured resources associated with a particular trust level that are outside of the isolation execution environment. A trust activation engine determines the trust level associated with a request for a resource and operates differently based on the trust level. A broker process may be used to execute components providing access to resources having a partial trust level in an execution environment that is separate from the isolation execution environment. | 01-24-2013 |
20130055285 | DISCOVERY AND ACTIVATION OF APPLICATION EXTENSIONS - The operating system of a computer maintains an extension catalog that stores data relating extensions with information about the contracts the extensions support. Extensions are registered in this catalog according to the contract they implement. The extension catalog can be queried to identify extensions that support a given contract. An extension can be selected from among the results from a query, and the selected extension can be activated. When activated, the extension is set up by the operating system as an independent process from, and with context from, the application for which it is an extension. Information about the extension is provided to the application to enable the extension and the application to communicate according to the supported contract. | 02-28-2013 |
20130055291 | DESCRIBING NATIVE APPLICATION PROGRAMMING INTERFACES OF AN OPERATING SYSTEM WITH METADATA - Native operating system application programming interfaces (API's) are described using metadata and such descriptions are stored in a standard file format in a known location. By storing API definitions using such metadata, other applications can readily identify and use the APIs. To create such API representations, during development, a developer describes the shape of the API, including (but not limited to) the classes, interfaces, methods, properties, events, parameters, structures and enumerated types defined by the API. This API description is processed by a tool which generates a machine-readable metadata file. The machine-readable metadata file contains the same information as the API description, however in a format designed to be machine read rather than human authored. | 02-28-2013 |
20130055292 | PROJECTING NATIVE APPLICATION PROGRAMMING INTERFACES OF AN OPERATING SYSTEM INTO OTHER PROGRAMMING LANGUAGES - Information about the operating system application programming interfaces is stored in a known format in a known location. This information fully describes the APIs exposed by the operating system and is stored in API metadata files. A language compiler or interpreter uses this API information to build a natural and familiar representation of the native system API in the target language. The language compiler or interpreter can read the API information at compile time and/or runtime. The metadata is used to allow an application to refer to named elements in the API. Projections are built that use the metadata to map named elements in the API to named elements in the target language, and to define wrappers that marshal data of those elements between the target representation and the native operating system representation. | 02-28-2013 |
20150020084 | PROJECTING NATIVE APPLICATION PROGRAMMING INTERFACES OF AN OPERATING SYSTEM INTO OTHER PROGRAMMING LANGUAGES - Information about the operating system application programming interfaces is stored in a known format in a known location. This information fully describes the APIs exposed by the operating system and is stored in API metadata files. A language compiler or interpreter uses this API information to build a natural and familiar representation of the native system API in the target language. The language compiler or interpreter can read the API information at compile time and/or runtime. The metadata is used to allow an application to refer to named elements in the API. Projections are built that use the metadata to map named elements in the API to named elements in the target language, and to define wrappers that marshal data of those elements between the target representation and the native operating system representation. | 01-15-2015 |
Patent application number | Description | Published |
20130042258 | RUNTIME SYSTEM - Various embodiments provide an ability to describe, independent of a programming language, one or more interfaces associated with an operating system. Alternately or additionally, a compiler associated with a specific programming language can be configured to map the independent interface description(s) to the specific programming language. In some embodiments, an application can be configured to programmatically determine one or more interfaces of the operating system. | 02-14-2013 |
20130066899 | Flexible Metadata Composition - Various embodiments provide an ability to abstract type resolution between multiple type systems. At least one type can be described in one or more programmatically accessible file(s). In some embodiments, an application using a different type system can programmatically access and resolve a type of the at least one type system without knowledge of a location of where a description of the type resides. Alternately or additionally, type descriptions contained in the one or more programmatically accessible file(s) can be analyzed and restructured into one or more new programmatically accessible file(s) based, at least in part, upon the type descriptions. | 03-14-2013 |
20140149437 | FLEXIBLE METADATA COMPOSITION - Various embodiments provide an ability to abstract type resolution between multiple type systems. At least one type can be described in one or more programmatically accessible file(s). In some embodiments, an application using a different type system can programmatically access and resolve a type of the at least one type system without knowledge of a location of where a description of the type resides. Alternately or additionally, type descriptions contained in the one or more programmatically accessible file(s) can be analyzed and restructured into one or more new programmatically accessible file(s) based, at least in part, upon the type descriptions. | 05-29-2014 |
20140325534 | RUNTIME SYSTEM - Various embodiments provide an ability to describe, independent of a programming language, one or more interfaces associated with an operating system. Alternately or additionally, a compiler associated with a specific programming language can be configured to map the independent interface description(s) to the specific programming language. In some embodiments, an application can be configured to programmatically determine one or more interfaces of the operating system. | 10-30-2014 |
20150074128 | FLEXIBLE METADATA COMPOSITION - Various embodiments provide an ability to abstract type resolution between multiple type systems. At least one type can be described in one or more programmatically accessible file(s). In some embodiments, an application using a different type system can programmatically access and resolve a type of the at least one type system without knowledge of a location of where a description of the type resides. Alternately or additionally, type descriptions contained in the one or more programmatically accessible file(s) can be analyzed and restructured into one or more new programmatically accessible file(s) based, at least in part, upon the type descriptions. | 03-12-2015 |