Patent application number | Description | Published |
20080237763 | ULTRAVIOLET DETECTING DEVICE AND MANUFACTURING METHOD THEREOF, AND ULTRAVIOLET QUANTITY MEASURING APPARATUS - The present invention provides an ultraviolet detecting device which comprises a silicon semiconductor layer having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, which is formed over an insulating layer, lateral PN-junction type first and second photodiodes formed in the silicon semiconductor layer, an interlayer insulating film formed over the silicon semiconductor layer, a first filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the first photodiode and causes light lying in a wavelength range of an UV-B wave or higher to pass therethrough, and a second filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the second photodiode and allows light lying in a wavelength range of an UV-A wave or higher to pass therethrough. | 10-02-2008 |
20080296642 | PHOTODIODE AND PHOTO IC USING SAME - The present invention provides a photodiode comprising a first silicon semiconductor layer formed over an insulating layer, a second silicon semiconductor layer formed over the insulating layer, having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, a low-concentration diffusion layer which is formed in the second silicon semiconductor layer and in which an impurity of either one of a P type and an N type is diffused in a low concentration, a P-type high-concentration diffusion layer which is formed in the first silicon semiconductor layer and in which the P-type impurity is diffused in a high concentration, and an N-type high-concentration diffusion layer which is opposite to the P-type high-concentration diffusion layer with the low-concentration diffusion layer interposed therebetween and in which the N-type impurity is diffused in a high concentration. | 12-04-2008 |
20090140368 | Method of producing photodiode and the photodiode - A photodiode includes a photosensitive element formed in a silicon semiconductor layer on an insulation layer. The photosensitive element includes a low concentration diffusion layer, a P-type high concentration diffusion layer, and an N-type high concentration diffusion layer. A method of producing the photodiode includes the steps of: forming an insulation material layer on the silicon semiconductor layer after the P-type impurity and the N-type impurity are implanted into the low concentration diffusion layer, the P-type high concentration diffusion layer, and the N-type high concentration diffusion layer; forming an opening portion in the insulation material layer in an area for forming the low concentration diffusion layer; and etching the silicon semiconductor layer in the area for forming the low concentration diffusion layer so that a thickness of the silicon semiconductor layer is reduced to a specific level. | 06-04-2009 |
20090184254 | ULTRAVIOLET SENSOR AND METHOD OF MANUFACTURING ULTRAVIOLET SENSOR - An ultraviolet sensor capable of separately detecting amount of ultraviolet irradiation of two wavelength range of a UV-A wave and a UV-B wave is provided. The ultraviolet sensor includes: a pair of photodiodes in which a high concentration P-type diffusion layer formed by diffusing a P-type impurity with a high concentration and a high concentration N-type diffusion layer formed by diffusing an N-type impurity with a high concentration, which are formed in a first silicon semiconductor layer on an insulation layer, are opposed to each other with a low concentration diffusion layer, which is formed in a second silicon semiconductor layer thinner than the first silicon semiconductor layer by diffusing one of the P-type impurity or the N-type impurity with a low concentration, interposed therebetween; an interlayer insulation film which is formed on the first and second silicon semiconductor layers; a filter film which is formed on the interlayer insulation layer of one of the photodiodes and formed of a silicon nitride film transmitting rays of a wavelength range of the UV-A wave or a longer wave; and a sealing layer which covers the interlayer insulation film of the other of the photodiodes and the filter film and transmits rays of the wavelength range of the UV-B wave or a longer wave. | 07-23-2009 |
20110042769 | ULTRAVIOLET DETECTING DEVICE AND MANUFACTURING METHOD THREOF, AND ULTRAVIOLET QUANTITY MEASURING APPARATUS - The present invention provides an ultraviolet detecting device which comprises a silicon semiconductor layer having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, which is formed over an insulating layer, lateral PN-junction type first and second photodiodes formed in the silicon semiconductor layer, an interlayer insulating film formed over the silicon semiconductor layer, a first filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the first photodiode and causes light lying in a wavelength range of an UV-B wave or higher to pass therethrough, and a second filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the second photodiode and allows light lying in a wavelength range of an UV-A wave or higher to pass therethrough. | 02-24-2011 |
20110163406 | PHOTODIODE - A photodiode includes a photosensitive element formed in a silicon semiconductor layer on an insulation layer. The photosensitive element includes a low concentration diffusion layer, a P-type high concentration diffusion layer, and an N-type high concentration diffusion layer. A method of producing the photodiode includes the steps of: forming an insulation material layer on the silicon semiconductor layer after the P-type impurity and the N-type impurity are implanted into the low concentration diffusion layer, the P-type high concentration diffusion layer, and the N-type high concentration diffusion layer; forming an opening portion in the insulation material layer in an area for forming the low concentration diffusion layer; and etching the silicon semiconductor layer in the area for forming the low concentration diffusion layer so that a thickness of the silicon semiconductor layer is reduced to a specific level. | 07-07-2011 |
Patent application number | Description | Published |
20100019387 | Semiconductor device and fabrication method of the same - A semiconductor device which comprises an SOI substrate having an insulating layer between a semiconductor substrate layer and a semiconductor layer in a surface of which a semiconductor element is formed, and at least one external terminal provided, via an insulating film, on a surface of the semiconductor substrate layer and electrically connected to the semiconductor element. The semiconductor device further comprises a contact portion constituted by a conductive film reaching through the insulating film to electrically connect to the semiconductor substrate layer; and a potential fixing electrode provided, via the insulating film, on the surface of the semiconductor substrate layer and connected to the contact portion. | 01-28-2010 |
20110140223 | LIGHT DETECTING APPARATUS AND METHOD OF MANUFACTURING SAME - A light detecting apparatus includes an SOI substrate. In the SOI substrate, a semiconductor layer and a silicon substrate are laminated via an insulating layer. The semiconductor layer has a light receiving unit and a circuit unit formed therein. The light detecting apparatus also includes an interlayer insulating film formed on a first main surface of the SOI substrate. The light detecting apparatus also includes a front surface circuit wiring embedded in the interlayer insulating film. The light detecting apparatus also includes a front surface pseudo-wiring having a grid unit. The grid unit has at least one opening allowing passage of a light of a predetermined wavelength range to the light receiving unit. The light detecting apparatus also includes a rear surface circuit wiring and a rear surface pseudo-wiring formed on a second main surface of the SOI substrate. The light detecting apparatus also includes a penetration circuit wiring that connects the front surface circuit wiring to the rear surface circuit wiring. The light detecting apparatus also includes a penetration pseudo-wiring that electrically connects the front surface pseudo-wiring to the rear surface pseudo-wiring. The light receiving unit is surrounded by the front surface pseudo-wiring, the rear surface pseudo-wiring, and the penetration pseudo-wiring. | 06-16-2011 |
20130069156 | SEMICONDUCTOR DEVICE - A semiconductor device formed on a silicon-on-insulator substrate includes a gate electrode, a gate insulation film, a drain diffusion region, a drift region, a body region, a plurality of source diffusion regions, and a plurality of charge collection diffusion regions. The source diffusion regions and charge collection diffusion regions are of mutually opposite conductivity types, and alternate with one another in the direction paralleling the width of the gate electrode. The half-width of each source diffusion region is equal to or less than the length of the gate electrode plus the half-length of the drift region. | 03-21-2013 |