Patent application number | Description | Published |
20080233513 | Heat-Resistant Photosensitive Resin Composition, Method For Forming Pattern Using the Composition, and Electronic Part - A heat resistant photosensitive resin composition having excellent film properties is provided by constituting a photosensitive resin composition containing (A) a polymer having an acid functional group and/or a substituent derived therefrom, (B) a compound having at least one substituent derived from an amine functional group, (C) a photoreactive compound, and (D) a solvent. Using this composition, a pattern with high resolution can be produced, and thus an electronic part having a high quality can be produced. | 09-25-2008 |
20090011364 | POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND ELECTRONIC PART - Provided is a positive photosensitive resin composition which is advantageous not only in excellent sensitivity, resolution and adhesion, but also in excellent heat resistance even when the composition is cured by a low-temperature process at equal to or lower than 280° C., as well as low water absorption and capability to give a pattern with favorable configuration. The positive photosensitive resin composition contains: (a) alkaline aqueous solution-soluble polyamide having a polyoxazole precursor structure; (b) an o-quinonediazide compound; and (c) a latent acid generator which generates acid upon heating. The composition optionally further contains (d) a compound having a phenolic hydroxyl group or (e) a solvent. | 01-08-2009 |
20100227126 | POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING PATTERNS, AND ELECTRONIC PARTS - A positive-type photosensitive resin composition for electronic materials having good film adhesiveness and sensitivity without causing a corrosion reaction to copper and copper alloys in metal wirings, a method for producing patterns and electronic parts are provided. The positive-type photosensitive resin composition includes (A) a polybenzoxazole precursor having a structure represented by the following general formula (I): | 09-09-2010 |
20110076458 | PHOTOSENSITIVE POLYMER COMPOSITION, METHOD OF FORMING RELIEF PATTERNS, AND ELECTRONIC EQUIPMENT - A photosensitive polymer composition, having (a) a polymer selected from polyimide precursors and polyimides having an acid group protected by a protecting group and having no amino group (—NH | 03-31-2011 |
Patent application number | Description | Published |
20090108414 | WAFER - A wafer has a rare earth oxide layer disposed, typically sprayed, on a substrate. It is useful as a dummy wafer in a plasma etching or deposition system. | 04-30-2009 |
20090142605 | WAFER - A wafer has a rare earth fluoride coating disposed, typically sprayed on a substrate as an outermost layer, the rare earth fluoride being selected from lanthanoid fluorides, yttrium fluoride, and scandium fluoride. It is useful as a dummy wafer in a plasma etching or deposition system. | 06-04-2009 |
20090191429 | CERAMIC SPRAYED MEMBER, MAKING METHOD, ABRASIVE MEDIUM FOR USE THEREWITH - A ceramic sprayed member comprises a substrate and a ceramic sprayed coating thereon. Splats have been removed from the surface of the sprayed coating, typically by blasting. The ceramic sprayed member with improved plasma resistance mitigates particle contamination of wafers and enables stable manufacture when used in a halogen plasma process for semiconductor fabrication or the like. | 07-30-2009 |
20120088034 | WAFER - A wafer has a rare earth oxide layer disposed, typically sprayed, on a substrate. It is useful as a dummy wafer in a plasma etching or deposition system. | 04-12-2012 |
20130122218 | CERAMIC SPRAYED MEMBER, MAKING METHOD, ABRASIVE MEDIUM FOR USE THEREWITH - A ceramic sprayed member comprises a substrate and a ceramic sprayed coating thereon. Splats have been removed from the surface of the sprayed coating, typically by blasting. The ceramic sprayed member with improved plasma resistance mitigates particle contamination of wafers and enables stable manufacture when used in a halogen plasma process for semiconductor fabrication or the like. | 05-16-2013 |