Patent application number | Description | Published |
20080227038 | PATTERN FORMATION METHOD - After formation of an underlayer film and an intermediate layer film, a resist pattern formed by the first pattern exposure with the first resist film and the second pattern exposure with the second resist film is transferred to the intermediate layer film. The underlayer film is etched using an intermediate layer pattern as a mask to form an underlayer film pattern. Herein, the first and second resist films are chemically amplified resist films. The second resist film contains a greater amount of additive which improves the sensitivity of the resist or which improves the alkaline solubility of resist exposed part. | 09-18-2008 |
20080233491 | BARRIER FILM MATERIAL AND PATTERN FORMATION METHOD USING THE SAME - A barrier film material includes, in addition to an alkali-soluble polymer, a multivalent carboxylic acid compound having a plurality of carboxyl groups or a multivalent alcohol compound. Thus, the multivalent carboxylic acid compound or the multivalent alcohol compound is adhered onto the surface of a resist film, and hence, particles having been adhered to the surface of the resist film are removed in removing the barrier film. Also, in the case where the barrier film is removed simultaneously with development, the resist film can be prevented from remaining partly undissolved. | 09-25-2008 |
20080248280 | Process for Preparing a Dispersion Liquid of Zeolite Fine Particles - The invention provides a preparation process of organic-group-modified zeolite fine particles excellent in stability of particle size and to be used for electronic materials or the like. The preparation process comprises a first step of obtaining a liquid containing zeolite seed crystals having a particle size of 80 nm or less which are formed in the presence of a structure directing agent, a second step of adding an organic-group-containing hydrolyzable silane compound to the liquid obtained by the first step, and a third step of maturing the liquid of the second step at temperature higher than that of the first step. A dispersion liquid of zeolite fine particles obtained by the process. | 10-09-2008 |
20080248328 | Process for Preparing a Zeolite-Containing Film - The invention provides a preparation process of a zeolite-containing film which can raise a zeolite component therein, control the physical properties of the surface, and provide a highly smooth film. The process for preparing a zeolite-containing film has a step of forming a precursor film containing an amorphous silicon oxide portion and a zeolite-like recurring portion by using a material having an amorphous silicon oxide portion and a material having a zeolite-like recurring portion; and a dry gel conversion step of heating the precursor film in the presence of water vapor in order to grow the zeolite-like recurring portion. In this process, the material having an amorphous silicon oxide portion and/or the material having a zeolite-like recurring portion contain(s) a silicon atom bonded to the carbon atom of an organic group containing at least one carbon group. | 10-09-2008 |
20080286687 | CHEMICALLY AMPLIFIED RESIST MATERIAL, TOPCOAT FILM MATERIAL AND PATTERN FORMATION METHOD USING THE SAME - A resist film made of a chemically amplified resist material including a polymer; a photo-acid generator and carbamoyl oxime is formed on a substrate. Subsequently, pattern exposure is performed by selectively irradiating the resist film with exposing light. After the pattern exposure, the resist film is baked, and the baked resist film is developed, so as to form a resist pattern made of the resist film. | 11-20-2008 |
20080290472 | SEMICONDUCTOR INTERLAYER-INSULATING FILM FORMING COMPOSITION, PREPARATION METHOD THEREOF, FILM FORMING METHOD, AND SEMICONDUCTOR DEVICE - Provided is a porous-film-forming composition containing silicon-oxide-based fine particles and a polysiloxane compound obtained by hydrolysis and condensation reactions, in the presence of an acid catalyst, of a hydrolyzable silane compound containing at least one tetrafunctional alkoxysilane compound represented by the following formula (1): | 11-27-2008 |
20080290521 | FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE - In the invention, a silica sol prepared by hydrolyzing and condensing a silane compound represented by the following formula: Si(OR | 11-27-2008 |
20080292863 | SILOXANE POLYMER, PREPARATION METHOD THEREOF, POROUS-FILM FORMING COATING SOLUTION CONTAINING THE POLYMER, POROUS FILM, AND SEMICONDUCTOR DEVICE USING THE POROUS FILM - Provided is a method for preparing a siloxane polymer by hydrolysis and condensation reactions of a hydrolyzable silane compound, which has a step of preparing a salt of a silsesquioxane cage compound represented by the following formula (1): | 11-27-2008 |
20090011065 | Dry etching method, fine structure formation method, mold and mold fabrication method - A WC substrate | 01-08-2009 |
20090017259 | Dry etching method, fine structure formation method, mold and mold fabrication method - A WC substrate | 01-15-2009 |
20090075182 | PHOTOMASK AND PATTERN FORMATION METHOD USING THE SAME - A photomask includes: a transparent substrate having a transparent property against exposing light; a first light-shielding pattern formed on the transparent substrate and having a first dimension; a second light-shielding pattern formed on the transparent substrate and having a second dimension larger than the first dimension; and an opening provided in part of the transparent substrate where the first light-shielding pattern and the second light-shielding pattern are not formed. The first light-shielding pattern includes a first semi-light-shielding portion and an auxiliary pattern which is arranged within the first semi-light-shielding portion and allows the exposing light to pass through in an opposite phase with respect to the first semi-light-shielding portion. The second light-shielding pattern includes a second semi-light-shielding portion and a light-shielding portion which does not substantially allow the exposing light to pass through. | 03-19-2009 |
20090091719 | Exposure system and pattern formation method - An exposure system includes an exposure section provided within a chamber for irradiating a resist film formed on a wafer with exposing light through a mask with an immersion liquid provided on the resist film. It further includes a drying section for drying the surface of the resist film after the irradiation. | 04-09-2009 |
20090092930 | PATTERN FORMATION METHOD - After forming an underlying layer film and an intermediate layer film are formed over a substrate, a resist pattern formed by first pattern exposure using a first resist film and second pattern exposure using a second resist film is transferred onto the intermediate layer film. Furthermore, the underlying layer film is etched using the intermediate layer pattern as a mask, thereby obtaining an underlying layer film pattern. The underlying layer film includes as an adduct a fluorine-based surfactant or inorganic nano particles and is provided with a resistance against oxygen-based plasma. | 04-09-2009 |
20090104560 | BARRIER FILM MATERIAL AND PATTERN FORMATION METHOD - In exposing a resist film to light with a liquid provided on a positive chemically amplified resist film, a barrier film material for a barrier film formed between the resist film and the liquid includes a compound having an acid leaving group and a thermal acid generator. | 04-23-2009 |
20090186484 | PATTERN FORMATION METHOD - After forming a resist film made from a chemically amplified resist material pattern exposure is carried out by selectively irradiating the resist film with exposing light while supplying, onto the resist film, water that includes triphenylsulfonium nonaflate, that is, an acid generator, and is circulated and temporarily stored in a solution storage. After the pattern exposure, the resist film is subjected to post-exposure bake and is then developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape. | 07-23-2009 |
20090294726 | ORGANIC SILICON OXIDE FINE PARTICLES AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE - Provided are organic silicon oxide fine particles which can be formed into a porous film having a dielectric constant and mechanical strength expected as a high-performance porous insulating film and having excellent chemical stability, and a preparation method thereof. Described specifically, provided are an organic silicon oxide fine particle comprising a core containing at least an inorganic silicon oxide or an organic silicon oxide and a shell containing at least an organic silicon oxide and being formed around the core by using shell-forming hydrolyzable silane in the presence of a basic catalyst; wherein of silicon atoms constituting the core or the shell, a ratio (T/Q) of a number (T) of silicon atoms having at least one bond directly attached to a carbon atom to a number (Q) of silicon atoms having all of four bonds attached to an oxygen atom is greater in the shell than in the core; and wherein the shell-forming hydrolyzable silane comprise at least a hydrolyzable silane compound having two or more hydrolyzable-group-having silicon atoms bound to each other via a carbon chain or via a carbon chain containing one silicon atom between some carbon atoms. | 12-03-2009 |
20090294922 | ORGANIC SILICON OXIDE FINE PARTICLE AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE - Provided is an organic silicon oxide fine particle capable of satisfying an expected dielectric constant and mechanical strength and having excellent chemical stability for obtaining a high-performance porous insulating film. More specifically, provided is an organic silicon oxide fine particle comprising a core comprising an inorganic silicon oxide or a first organic silicon oxide containing an organic group having a carbon atom directly attached to a silicon atom and, and a shell on or above an outer circumference of the core, the shell comprising a second organic silicon oxide different from the first organic silicon oxide which the second organic silicon has been formed by hydrolysis and condensation, in the presence of a basic catalyst, of a shell-forming component comprising an organic-group-containing hydrolyzable silane containing an organic group having a carbon atom directly attached to a silicon atom or a mixture of the organic-group-containing hydrolyzable silane and an organic-group-free hydrolyzable silane not having the organic group, wherein a ratio [C]/[Si] is 0 or greater but less than 1 in the core and 1 or greater 1 in the shell wherein [C] represents the number of all the carbon atoms and [Si] represents the number of all the silicon atoms. | 12-03-2009 |
20100055626 | METHOD FOR PATTERN FORMATION - A resist film made of a chemically amplified positive resist is formed on a substrate. On the resist film, a light absorbing film containing a fluoropolymer which is alkali-soluble and has an aromatic ring is formed. Thereafter, first pattern exposure is performed by irradiating the resist film through the light absorbing film with first exposure light containing extreme ultraviolet light having passed through a first mask. Thereafter, second pattern exposure is performed by irradiating the resist film through the light absorbing film with exposure light having passed through a second mask. After the substrate is heated, the resist film is developed to remove the light absorbing film and form a resist pattern made of the resist film. An opening portion of the second mask is formed in a region corresponding to a non-opening portion of the first mask in which an opening portion is not formed. | 03-04-2010 |
20100183988 | EXPOSURE SYSTEM AND PATTERN FORMATION METHOD - An exposure system includes a cleaning unit for cleaning a surface of a resist film formed on a wafer with a cleaning fluid and an exposure unit for performing pattern exposure with an immersion liquid provided between the resist film and a projection lens. | 07-22-2010 |
20100209850 | PATTERN FORMING METHOD - A first resist film is formed on a substrate, and first pattern exposure is performed such that the first resist film is irradiated with exposure light through a first mask. Then, the first resist film is developed, thereby forming a first resist pattern out of the first resist film. Subsequently, a nano-carbon material is attached to the surface of the first resist pattern, and then a second resist film is formed on the substrate including the first resist pattern. Thereafter, second pattern exposure is performed such that the second resist film is irradiated with exposure light through a second mask. Then, the second resist film is developed, thereby forming a second resist pattern out of the second resist film. | 08-19-2010 |
20100221672 | PATTERN FORMING METHOD - A resist film of a positive type containing a photoacid generator is formed on a substrate. Then, pattern exposure is performed by selectively irradiating the resist film with exposure light. Thereafter, first heating is performed on the resist film subjected to the pattern exposure. After the heating, first development is performed on the resist film, thereby forming a first resist pattern. Subsequently, the first resist pattern is exposed to a solution containing a thermal acid generator and containing neither polymer nor a cross-linking agent. After the exposure, second heating is performed on the first resist pattern. Second development is then performed on the first resist pattern, thereby forming a second resist pattern made of the first resist pattern having a reduced size. | 09-02-2010 |
20100233482 | Organic silicon oxide fine particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device - Provided are organic silicon oxide fine particles which can be formed into a porous film having a dielectric constant and mechanical strength expected as a high-performance porous insulating film and having excellent chemical stability, and a preparation method thereof. Described specifically, provided are an organic silicon oxide fine particle comprising a core containing at least an inorganic silicon oxide or an organic silicon oxide and a shell containing at least an organic silicon oxide and being formed around the core by using shell-forming hydrolyzable silane in the presence of a basic catalyst; wherein of silicon atoms constituting the core or the shell, a ratio (T/Q) of a number (T) of silicon atoms having at least one bond directly attached to a carbon atom to a number (Q) of silicon atoms having all of four bonds attached to an oxygen atom is greater in the shell than in the core; and wherein the shell-forming hydrolyzable silane comprise at least a hydrolyzable silane compound having two or more hydrolyzable-group-having silicon atoms bound to each other via a carbon chain or via a carbon chain containing one silicon atom between some carbon atoms. | 09-16-2010 |
20100265477 | SEMICONDUCTOR MANUFACTURING APPARATUS AND PATTERN FORMATION METHOD - In a pattern formation method employing immersion lithography, after a resist film is formed on a wafer, pattern exposure is performed by selectively irradiating the resist film with exposing light with a liquid including an unsaturated aliphatic acid, such as sunflower oil or olive oil including oleic acid, provided on the resist film. After the pattern exposure, the resist film is developed so as to form a resist pattern made of the resist film. | 10-21-2010 |
20100266958 | RESIST MATERIAL AND METHOD FOR FORMING PATTERN USING THE SAME - Initially, on a substrate, a resist film is formed from a resist material including a monomer containing a halogen atom (fluorine) and stable to acid, a polymer containing fluorine and stable to acid, a polymer containing an acid-labile group, and a photo acid generator. Next, while liquid is provided on the resist film, pattern exposure is performed by selectively irradiating the resist film with exposing light. Next, the resist film after the pattern exposure is developed to form a resist pattern from the resist film. | 10-21-2010 |
20100283133 | FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE - In the invention, a silica sol prepared by hydrolyzing and condensing a silane compound represented by the following formula: Si(OR | 11-11-2010 |
20110136048 | PHOTOMASK AND PATTERN FORMATION METHOD USING THE SAME - A photomask includes: a transparent substrate having a transparent property against exposing light; a first light-shielding pattern formed on the transparent substrate and having a first dimension; a second light-shielding pattern formed on the transparent substrate and having a second dimension larger than the first dimension; and an opening provided in part of the transparent substrate where the first light-shielding pattern and the second light-shielding pattern are not formed. The first light-shielding pattern includes a first semi-light-shielding portion and an auxiliary pattern which is arranged within the first semi-light-shielding portion and allows the exposing light to pass through in an opposite phase with respect to the first semi-light-shielding portion. The second light-shielding pattern includes a second semi-light-shielding portion and a light-shielding portion which does not substantially allow the exposing light to pass through. | 06-09-2011 |
20110177454 | RESIST MATERIAL AND PATTERN FORMATION METHOD USING THE RESIST MATERIAL - First, a resist film is formed on a substrate from a resist material including cyclic oligomer which does not contain any acid-labile group, is soluble in alkali, and is a trimer or a higher multimer; a molecular compound containing an acid-labile group; a photoacid generator; and no polymer. Then, pattern exposure is performed by selectively irradiating the formed resist film with exposure light of extreme ultraviolet. The resist film after the pattern exposure is heated, and then, the heated resist film is developed to form a resist pattern from the resist film. | 07-21-2011 |
20110186544 | METHOD OF ACCELERATING SELF-ASSEMBLY OF BLOCK COPOLYMER AND METHOD OF FORMING SELF-ASSEMBLED PATTERN OF BLOCK COPOLYMER USING THE ACCELERATING METHOD - A block copolymer film is formed on a substrate. Then, the block copolymer film is annealed in an inert-gas atmosphere, for example, in a neon atmosphere. This places the outside (mainly the upper portion) of the block copolymer film in a nonpolar state, thereby strongly drawing, for example, a monomer unit having hydrophobic characteristics outside the block copolymer film to accelerate self-assembly. This results in an improvement in throughput in self-assembled pattern formation of the block copolymer film. | 08-04-2011 |
20110189616 | PATTERN FORMATION METHOD - After forming a lower layer film, an intermediate layer film and a first resist film on a substrate, a first resist pattern is formed by performing first exposure. Then, after a first intermediate layer pattern is formed by transferring the first resist pattern onto the intermediate layer film, a second resist film is formed thereon, and a second resist pattern is formed by performing second exposure. Thereafter, a second intermediate layer pattern is formed by transferring the second resist pattern onto the intermediate layer film. After removing the second resist film, the lower layer film is etched by using the second intermediate layer pattern as a mask, so as to form a lower layer pattern. | 08-04-2011 |
20120009795 | CHEMICALLY AMPLIFIED RESIST MATERIAL AND PATTERN FORMATION METHOD USING THE SAME - A resist film ( | 01-12-2012 |
20140308604 | PHOTO MASK AND METHOD FOR FORMING PATTERN USING THE SAME - An opening width of a main pattern is a width with which a transcription pattern is formed on a target member to be exposed by transmitted exposure light, and is a dimension of 0.8×(λ/NA)×M or less (where λ is a wavelength of the exposure light, and NA and M are a numerical aperture and a reduction ratio of a reduced projection optical system of an exposure apparatus). Each of a first auxiliary pattern adjacent to the main pattern and a second auxiliary pattern located outside the first auxiliary pattern to be adjacent thereto has a width with which a transcription pattern is not formed by the exposure light and generates diffracted light. A first distance between respective centers of the main pattern and the first auxiliary pattern is greater than a second distance between respective centers of the first auxiliary pattern and the second auxiliary pattern. | 10-16-2014 |