Patent application number | Description | Published |
20130025354 | METHOD AND DEVICE FOR TESTING A FUEL INJECTOR - A method for selecting a procedure for determining the injection time of individual injection operations of a fuel injector, which may be supplied with pressurized fuel via a feed line, includes activating the fuel injector using various known activation durations in the vicinity of a predefined operating point of the fuel injector; detecting the pressure curve over time in the feed line for a number of injection operations; evaluating the detected pressure curves over time using at least two different procedures for determining the injection time from the particular pressure curve; determining the correlation between the determined injection times and the particular activation period; selecting the procedure with the highest correlation. | 01-31-2013 |
20130186605 | TEST STAND AND METHOD FOR TESTING FLUID PUMPS AND FLUID INJECTORS - A test stand for testing a fluid injection pump and/or a fluid injector has a device for conditioning a test fluid used for the testing. The device has a tank to accommodate and store the test fluid, a first fluid removal line to withdraw test fluid from the tank and to convey it to the fluid injection pump, and a cooling circuit for cooling the test fluid stored inside the tank. The cooling circuit has a second fluid removal line and a return line. The fluid removal line is to withdraw test fluid from the tank and is connected to a heat exchanger, which cools the test fluid withdrawn from the tank. The return line is connected to the heat exchanger and returns the test fluid from the heat exchanger back into the tank. | 07-25-2013 |
20150077749 | DEVICE FOR CALIBRATING A SCATTEROMETER - A calibration device is described for calibrating a scatterometer, which is designed in particular for measuring a particle concentration in exhaust gases of motor vehicles. The calibration device has at least one scattering body which emits scattered light having a defined intensity and distribution when irradiated with a light beam, the scattering body having an emission surface for the scattered light, to which is assigned at least one light sensor for detecting the scattered light exiting the emission surface. A screening body having at least one screen opening through which the scattered light exits in the direction of the at least one light sensor is assigned to the emission surface of the scattering body. | 03-19-2015 |
Patent application number | Description | Published |
20090087631 | Wafer and a Method for Manufacturing a Wafer - A wafer includes a wafer frontside and a region adjacent to the device surface, wherein the region includes vacancy-oxygen complexes and the wafer frontside includes a predetermined surface structure to form thereon a device with a desired property. | 04-02-2009 |
20090087632 | Wafer and Method for Producing a Wafer - A wafer includes a wafer frontside surface and a region adjacent to the wafer frontside surface. The region includes oxygen precipitates and the wafer frontside includes a predetermined surface structure to form thereon a device with a desired property. | 04-02-2009 |
20100297810 | Power Semiconductor Device and Method for Its Production - A power semiconductor device and a method for its production. The power semiconductor device has at least one power semiconductor chip, which has on its top side and on its back side large-area electrodes. The electrodes are electrically in connection with external contacts by means of connecting elements, the power semiconductor chip and the connecting elements being embedded in a plastic package. This plastic package has a number of layers of plastic, which are pressed one on top of the other and have plane-parallel upper sides. The connecting elements are arranged on at least one of the plane-parallel upper sides, between the layers of plastic pressed one on top of the other, as a patterned metal layer and are electrically in connection with the external contacts by means of contact vias through at least one of the layers of plastic. | 11-25-2010 |
20110079882 | Wafer and a Method for Manufacturing a Wafer - A wafer includes a wafer frontside and a region adjacent to the device surface, wherein the region includes vacancy-oxygen complexes and the wafer frontside includes a predetermined surface structure to form thereon a device with a desired property. | 04-07-2011 |
20110147817 | SEMICONDUCTOR COMPONENT HAVING AN OXIDE LAYER - Semiconductor component having an oxide layer. One embodiment includes a first semiconductor region and a second semiconductor region. An oxide layer is arranged between the first and second semiconductor region. The first semiconductor region and the oxide layer form a first semiconductor-oxide interface. The second semiconductor region and the oxide layer form a second semiconductor-oxide interface. The oxide layer has a chlorine concentration, the chlorine concentration having a first maximum in the region of the first semiconductor-oxide interface, and having a second maximum in the region of the second semiconductor-oxide interface. | 06-23-2011 |
20110147883 | SEMICONDUCTOR BODY WITH A BURIED MATERIAL LAYER AND METHOD - Disclosed is a method for forming a buried material layer in a semiconductor body, and a semiconductor arrangement including a buried material layer. | 06-23-2011 |
20120019284 | Normally-Off Field Effect Transistor, a Manufacturing Method Therefor and a Method for Programming a Power Field Effect Transistor - A normally-off power field-effect transistor semiconductor structure is provided. The structure includes a channel, a source electrode, a gate electrode and trapped charges which arranged between the gate electrode and the channel such that the channel is in an off-state when the source electrode and the gate electrode are on the same electric potential. Further, a method for forming a semiconductor device and a method for programming a power field effect transistor are provided. | 01-26-2012 |
20120223420 | SEMICONDUCTOR BODY WITH A BURIED MATERIAL LAYER - One aspect includes a semiconductor arrangement with a semiconductor body having a first surface. A buried material layer is in the semiconductor body, the buried material layer being arranged distant to the first surface. A monocrystalline semiconductor material is arranged between the material layer and the first surface, and a monocrystalline semiconductor material adjoins the material layer in a lateral direction of the semiconductor body. | 09-06-2012 |
20120286355 | Power Semiconductor Device and a Method for Forming a Semiconductor Device - A power semiconductor device has a semiconductor body which includes an active area and a peripheral area which both define a horizontal main surface of the semiconductor body. The semiconductor body further includes an n-type semiconductor layer, a pn junction and at least one trench. The n-type semiconductor layer is embedded in the semiconductor body and extends to the main surface in the peripheral area. The pn junction is arranged between the n-type semiconductor layer and the main surface in the active area. The at least one trench extends in the peripheral area from the main surface into the n-type semiconductor layer and includes a dielectric layer with fixed negative charges. In the vertical direction, the dielectric layer is arranged both below and above the pn junction. The dielectric layer with fixed negative charges typically has a negative net charge. Further, a method for forming a semiconductor device is provided. | 11-15-2012 |
20140001514 | Semiconductor Device and Method for Producing a Doped Semiconductor Layer | 01-02-2014 |
20140017874 | SEMICONDUCTOR BODY WITH A BURIED MATERIAL LAYER AND METHOD - One aspect includes a method for forming a buried material layer in a semiconductor body, including providing a semiconductor body having a first side and having a plurality of first trenches extending from the first surface into the semiconductor body. Each of the plurality of first trenches has a bottom and has at least one sidewall and the plurality of first trenches is separated from one another by semiconductor mesa regions. A first material layer is formed on the bottom of each of the plurality of first trenches such that the first material layer leaves at least one segment of at least one sidewall of each of the plurality of trenches uncovered. Each of the plurality of first trenches is filled by epitaxially growing a semiconductor material from the at least one uncovered sidewall segment. After filling the first trenches, second trenches are formed in the mesa regions. | 01-16-2014 |
20140141602 | Method for Manufacturing a Semiconductor Device - A method for producing a semiconductor device is provided. The method includes: forming in a semiconductor substrate a plurality of semiconductor mesas extending to an upper side so that adjacent semiconductor mesas are spaced apart from each other by one of a substantially empty trench and a trench substantially filled with a sacrificial layer selectively etchable with respect to the semiconductor mesas; forming a support structure mechanically connecting the semiconductor mesas spaced apart from each other by one of the substantially empty trench and the trench substantially filled with the sacrificial layer; and processing the semiconductor substrate from the upper side while the semiconductor mesas are mechanically connected via the support structure. | 05-22-2014 |
20140235058 | Method for Forming a Power Semiconductor Device - A method for forming a semiconductor device includes providing a semiconductor body which has a main surface and a first n-type semiconductor region, forming a trench which extends from the main surface into the first n-type semiconductor region, and forming a dielectric layer having fixed negative charges on a surface of the trench, by performing at least one atomic layer deposition using an organometallic precursor. | 08-21-2014 |
20150187875 | SEMICONDUCTOR BODY WITH A BURIED MATERIAL LAYER AND METHOD - One aspect includes a method for forming a buried material layer in a semiconductor body, including providing a semiconductor body having a first side and having a plurality of first trenches extending from the first surface into the semiconductor body. Each of the plurality of first trenches has a bottom and has at least one sidewall and the plurality of first trenches is separated from one another by semiconductor mesa regions. A first material layer is formed on the bottom of each of the plurality of first trenches such that the first material layer leaves at least one segment of at least one sidewall of each of the plurality of trenches uncovered. Each of the plurality of first trenches is filled by epitaxially growing a semiconductor material from the at least one uncovered sidewall segment. After filling the first trenches, second trenches are formed in the mesa regions. | 07-02-2015 |
Patent application number | Description | Published |
20110101002 | MOLDING PROCESS OF LINER WITH DIVIDED BOSS ADAPTER - A boss for use with a vessel is disclosed. The boss includes a first component adapted to be formed in an opening of the vessel, wherein the first component includes a first coupling element, and a second component including a second coupling element, wherein the second coupling element engages the first coupling element to secure the second component to the first component, and wherein a liner of the vessel is disposed therebetween. | 05-05-2011 |
20110210127 | EXTRUDED TUBE WELDED VESSEL LINER WITH INJECTION MOLDED END CAPS - A pressure vessel for storing a fluid is disclosed. The pressure vessel includes a vessel liner forming a hollow tube and including a plurality of layers with an aperture formed therein, wherein at least one of the layers is a barrier layer and an end cap coupled to the vessel liner, wherein the end cap has a plurality of layers, and wherein at least one of the layers of the end cap is a barrier layer. | 09-01-2011 |
20110210128 | EMBEDDED REINFORCEMENT SLEEVE FOR A PRESSURE VESSEL - A boss and a capture sleeve for use with a pressure vessel are disclosed. The capture sleeve is disposed within a liner of the pressure vessel, adjacent an opening. A plurality of attachment members disposed on the capture sleeve are received by the boss, securing the boss to the liner. The pressure vessel including the boss and the capture sleeve minimizes the effects of pressure and temperature variations, militates against an axial and rotational movement of the boss, and facilitates installation and replacement of a seal disposed adjacent the boss. | 09-01-2011 |
20110210475 | METHOD FOR PRODUCING A LINER OF A VESSEL - A vessel and method for forming the vessel is disclosed, the vessel having an injection blow molded hollow liner, wherein the hollow liner includes reinforced interfacial features formed substantially around a portion of at least one vessel penetration element. | 09-01-2011 |
20110220660 | PROCESS FOR FORMING A VESSEL - A vessel and method for forming the vessel is disclosed, the vessel having a hollow liner, at least one boss, and a filament wound outer shell, wherein at least a portion of the hollow liner if formed by at least one of an co-extrusion blow film molding process, a thermoplastic foiling process, and a coating process. | 09-15-2011 |
20110220661 | CLAMPED LINER-BOSS CONNECTION - A pressure vessel for storing a fluid, the pressure vessel including an annular inner boss having an inner surface and an outer surface, the inner surface forming a passage adapted to receive a utility device therein, wherein the inner boss includes a liner channel formed intermediate the inner surface and the outer surface, a vessel liner having a portion thereof disposed in the liner channel of the inner boss, and an outer boss secured to the outer surface of the inner boss. | 09-15-2011 |
20110221103 | METHOD AND APPARATUS FOR PRODUCING A LINER OF A CONTAINER - A method and apparatus for manufacture of a liner of a container is disclosed. The apparatus includes an elongate shaft having a first end and a second end, wherein at least one of the first end and the second end receives a container penetration element thereon. | 09-15-2011 |
20110304083 | PROCESS AND APPARATUS FOR FORMING AN INNER VESSEL LINER FOR A PRESSURE VESSEL - A method and apparatus for forming the vessel is disclosed, the vessel having an injection molded interfacial layer formed on a penetrating element and a filament wound outer shell, the interfacial layer coupled to a blow molded inner shell, wherein a portion of the interfacial layer is coupled to the inner shell to facilitate forming a substantially fluid tight connection therebetween. | 12-15-2011 |
20130152371 | CLAMPED LINER-BOSS CONNECTION - A pressure vessel for storing a fluid, the pressure vessel including an annular inner boss having an inner surface and an outer surface, the inner surface forming a passage adapted to receive a utility device therein, wherein the inner boss includes a liner channel formed intermediate the inner surface and the outer surface, a vessel liner having a portion thereof disposed in the liner channel of the inner boss, and an outer boss secured to the outer surface of the inner boss. | 06-20-2013 |
20140120204 | APPARATUS FOR PRODUCING A LINER OF A CONTAINER - Apparatus for manufacture of a liner of a container is disclosed. The apparatus includes an elongate shaft having a first end and a second end, wherein at least one of the first end and the second end receives a container penetration element thereon. | 05-01-2014 |
20140272670 | METHOD AND APPARATUS FOR MAKING A FUEL STORAGE TANK WITH A LINER AND INNER BAG FOR A FUEL STORAGE SYSTEM - An apparatus and method of manufacturing a fuel storage tank for a fuel cell system used for storing various pressurized fluids having separate permeation characteristics for reducing permeation leakage during various temperature and pressure cycles. The fuel storage tank comprises a formed liner to define an inner cavity, as well as a boss connected to the liner, a reinforcement structure formed around a portion of the boss and the liner, a permeation bag affixed to a first securing member and inserted into the inner cavity of the liner. The first securing member is coupled with the boss and a second securing member is assembled to the boss adjacent the first securing member to secure a fluid tight connection between the permeation bag, the liner and the boss. | 09-18-2014 |