Patent application number | Description | Published |
20080311514 | SILSESQUIOXANE COMPOUND MIXTURE, HYDROLYZABLE SILANE COMPOUND, MAKING METHODS, RESIST COMPOSITION, PATTERNING PROCESS, AND SUBSTRATE PROCESSING - In a mixture of silsesquioxane compounds comprising silsesquioxane units having a side chain including a direct bond between a silicon atom and a norbornane skeleton and having a degree of condensation of substantially 100%, a dimethylene chain of the norbornane skeleton remote from the silicon bonded side is substituted with at least one substituent group other than hydrogen, and an isomer having a bulkier substituent group on the dimethylene chain at an exo position is present in a higher proportion. | 12-18-2008 |
20090136869 | METAL OXIDE-CONTAINING FILM-FORMING COMPOSITION, METAL OXIDE-CONTAINING FILM, METAL OXIDE-CONTAINING FILM-BEARING SUBSTRATE, AND PATTERNING METHOD - A metal oxide-containing film is formed from a heat curable composition comprising (A) a metal oxide-containing compound obtained through hydrolytic condensation between a hydrolyzable silicon compound and a hydrolyzable metal compound, (B) a hydroxide or organic acid salt of Li, Na, K, Rb or Cs, or a sulfonium, iodonium or ammonium compound, (C) an organic acid, and (D) an organic solvent. The metal oxide-containing film ensures effective pattern formation. | 05-28-2009 |
20090253084 | DOUBLE PATTERNING PROCESS - Double patterns are formed by coating a chemically amplified positive resist composition comprising an acid labile group-bearing resin and a photoacid generator and prebaking to form a resist film on a processable substrate, exposing the resist film to high-energy radiation, PEB, and developing with an alkaline developer to form a positive resist pattern, treating the positive resist pattern to be alkali soluble and solvent resistant, coating a negative resist composition and prebaking to form a reversal film, and exposing the reversal film to high-energy radiation, PEB, and developing with an alkaline developer to form a negative resist pattern. The last development step includes the reversal transfer step of dissolving away the positive resist pattern which has been converted to be soluble in developer. | 10-08-2009 |
Patent application number | Description | Published |
20090032979 | SEMICONDUCTOR DEVICE HAVING ALIGNMENT MARK AND ITS MANUFACTURING METHOD - Many holes are formed in an interlayer insulating film and the surface of the interlayer insulating film is covered with a metal film, with its surface undulated by openings or recesses formed to scatter reflection light. The size of the recesses is about the size of contact holes of elements. Hence the recesses are not detectable by an image recognition apparatus. The size of the metal film, however, is set so that it can be detected by the image recognition apparatus. | 02-05-2009 |
20100097146 | Signal amplification circuit - This invention provides a low-current consumption type signal amplification circuit, which limits the output voltage to fix a lower-limit (upper-limit) saturation voltage of the amplification circuit at a predetermined lower-limit (upper-limit) limiting voltage. The signal amplification circuit comprises a negative feedback amplification circuit, a lower-limit voltage limiting circuit and an upper-limit voltage limiting circuit. The lower-limit voltage limiting circuit increases a resistance between an output terminal of the negative feedback amplification circuit and a ground terminal when the output voltage of the negative feedback amplification circuit falls below the lower-limit limiting voltage. The upper-limit voltage limiting circuit increases a resistance between the output terminal of the negative feedback amplification circuit and a high-potential side of a power supply when the output voltage of the negative feedback amplification circuit rises above the upper-limit limiting voltage. | 04-22-2010 |
20130193531 | PHYSICAL QUANTITY SENSOR WITH SON STRUCTURE, AND MANUFACTURING METHOD THEREOF - Provided by some aspects of the invention is a relatively low-cost, relatively highly accurate physical quantity sensor, and a manufacturing method thereof, that relaxes thermal stress from an outer peripheral portion of a diaphragm in a silicon-on-nothing (“SON”) structure. By providing a stress relaxation region (trench groove) in an outer peripheral portion of a diaphragm in a SON structure, there can be, in some aspects of the invention, a benefit of relaxing the transmission to the diaphragm of thermal stress generated by the difference in linear expansion coefficient between a package and chip, and it is possible to relax the transmission to an electronic circuit disposed in an outer peripheral portion of mechanical stress generated by a measured pressure. As a result of this, it is possible to provide a highly accurate physical quantity sensor. | 08-01-2013 |
20130294171 | SEMICONDUCTOR INTEGRATED CIRCUIT AND SEMICONDUCTOR PHYSICAL QUANTITY SENSOR DEVICE - In aspects of the invention, an auxiliary memory circuit includes a shift register wherein a plurality of flip-flops are cascade-connected and a plurality of inversion circuits that invert and output outputs of each D flip-flop. A main memory circuit includes a switch, which acts in accordance with a signal from the auxiliary memory circuit, and an EPROM connected in series to the switch and driven by a writing voltage. A variable resistance circuit includes a switch, which acts in accordance with a signal from the auxiliary memory circuit, and a resistor connected in series to the switch. With aspects of the invention, it is possible for terminals of the writing voltage and a writing voltage to be commonized. Also, it is possible to provide a low-cost semiconductor physical quantity sensor device that can carry out electrical trimming with the voltage when writing into the EPROM kept constant. | 11-07-2013 |
20140330539 | SEMICONDUCTOR INTEGRATED CIRCUIT AND SEMICONDUCTOR PHYSICAL QUANTITY SENSOR DEVICE - In aspects of the invention, an auxiliary memory circuit includes a shift register wherein a plurality of flip-flops are cascade-connected and a plurality of inversion circuits that invert and output outputs of each D flip-flop. A main memory circuit includes a switch, which acts in accordance with a signal from the auxiliary memory circuit, and an EPROM connected in series to the switch and driven by a writing voltage. A variable resistance circuit includes a switch, which acts in accordance with a signal from the auxiliary memory circuit, and a resistor connected in series to the switch. With aspects of the invention, it is possible for terminals of the writing voltage and a writing voltage to be commonized. Also, it is possible to provide a low-cost semiconductor physical quantity sensor device that can carry out electrical trimming with the voltage when writing into the EPROM kept constant. | 11-06-2014 |
20150021781 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device has a plurality of first opening portions formed in an interlayer insulating film. The surface is covered with a metal film with a surface having concavities and convexities which scatter reflected light. Size of the first opening portion is of the same level as a contact hole of a component and cannot be recognized by an image recognition apparatus. The metal film can be recognized by the image recognition apparatus. By forming a TiN film serving as a reflection prevention film on an end of the metal film, portions that can easily scatter light and a portion that cannot easily reflect light are adjacent in an alignment marker. A passivation film is formed on the interlayer insulating film and the TiN film. Recessed portions disposed in the metal film are exposed to a second opening portion formed in the passivation film and the TiN film. | 01-22-2015 |
Patent application number | Description | Published |
20110001166 | PHOTO-FIELD EFFECT TRANSISTOR AND ITS PRODUCTION METHOD - This invention provides a photo-FET, in which a FET part and photodiode part are stacked, and the FET part and photodiode part are optimized independently in design and operational bias conditions. The semiconductor layer serving as a photo-absorption layer ( | 01-06-2011 |
20110193133 | PHOTO DETECTION DEVICE - A highly sensitive and wide spectra-range mesa type photodetector having the impurity diffusion along the mesa-sidewall is provided with. | 08-11-2011 |
20110291158 | HETERO-JUNCTION BIPOLAR PHOTOTRANSISTOR - The present invention provides a HPT having high sensitivity and extensive wavelength band characteristics. The collector and barrier layer ( | 12-01-2011 |
20110297955 | Semiconductor Light Emitting Diode - A highly-efficient semiconductor light emitting diode with improved light extraction efficiency comprising at least a substrate having a plurality of crystal planes, a first conductivity-type barrier layer, an active layer serving as a light emitting layer and a second conductivity-type barrier layer stacked on the substrate. The semiconductor light emitting diode comprises a ridge structure configured from one flat surface and at least two inclining surfaces in the in-plane direction. The width (W) of the flat surface of the ridge structure is 2λ (λ: light emission wavelength) or less. The active layer is positioned in the laminating direction so that the shortest length (L) between two points is λ (light emission wavelength) or less, wherewith the first point is the shortest point where the light emitted from the center (C) of the active layer begins total internal reflection at the interface between the inclining surfaces of the ridge structure and air, and the second point is a point where the flat surface begins. | 12-08-2011 |
Patent application number | Description | Published |
20090245981 | CLOSED CONTAINER, LID OPENING AND CLOSING SYSTEM FOR CLOSED CONTAINER, WAFER TRANSFER SYSTEM, AND LID CLOSING METHOD FOR CLOSED CONTAINER - A plurality of detection marks that can be detected from outside are provided on a lid of a pod. Whether the lid is appropriately fixed on the pod main body is determined by detecting the presence of the marks at predetermined positions. Thus, whether the lid is appropriately fixed on the pod is detected in the operation of closing the pod opening with the lid in a FIMS system. | 10-01-2009 |
20100135755 | LID CLOSING METHOD FOR CLOSED CONTAINER AND LID OPENING/CLOSING SYSTEM FOR CLOSED CONTAINER - Provided is a method of detecting whether or not a lid is fixed to a pod appropriately when performing an operation of closing an opening of the pod by the lid in an FIMS system. Determination is made whether or not a door is present at a predetermined position when the lid is attached to the pod and whether or not the pod is displaced from a position of opening/closing the lid, and determination is made again, after the lid engages with the pod, whether or not the door is present at the predetermined position and whether or not the pod is displaced from the position of opening/closing the lid. When it is confirmed in both the determinations that the door is present at the predetermined position and the pod is not displaced, determination that fixation of the lid is appropriate is made. | 06-03-2010 |
20110070055 | LOAD PORT APPARATUS AND DUST EXHAUST METHOD FOR LOAD PORT APPARATUS - In a load port apparatus, a door driving mechanism that supports a door through a communication opening portion leading to a mini-environment is housed in a housing chamber that is in communication with the mini-environment through the communication opening portion. Exhaust opening portions are provided in the upper portion of a wall of the housing chamber that is opposed to the communication opening portion and a bottom wall of the housing chamber. Thus, gas passages from the mini-environment to the housing chamber and then to the external space are formed. Thus, dust in the load port apparatus is removed. | 03-24-2011 |
20130074615 | LOAD PORT APPARATUS AND METHOD OF DETECTING OBJECT TO BE PROCESSED - To enable appropriate wafer mapping in the case where a wafer is stored at the highest level, which is provided as a reserve, of a pod, a load port apparatus drives a mapping frame that supports a sensor by a first driving unit that drives the mapping frame in a first direction parallel to the direction along which wafers in the pod are arranged in an overlapping manner and a second driving unit that drives the mapping frame in a second direction that crosses the first direction in such a way as to form an acute angle in the side in which the sensor starts the mapping. | 03-28-2013 |
Patent application number | Description | Published |
20090195903 | METHOD OF EVALUATING MAGNETORESISTIVE HEAD - The method is capable of perfectly detecting unstably magnetized magnetoresistive heads. The method of evaluating a magnetoresistive head comprises the steps of: applying a magnetic field to the magnetoresistive head, in the direction parallel to an air bearing surface of the magnetoresistive head, at a prescribed temperature; obtaining an image of the air bearing surface in a first magnetized state by using the Kerr effect; applying an external stress to the magnetoresistive head; obtaining an image of the air bearing surface in a second magnetized state by using the Kerr effect; and evaluating characteristics of the magnetoresistive head on the basis of the images of the first magnetized state and the second magnetized state or by comparing the images of the first magnetized state and the second magnetized state. | 08-06-2009 |
20090243602 | METHOD AND APPARATUS FOR TESTING CHARACTERISTIC OF MAGNETIC HEAD - The method for testing a characteristic of a magnetic head is performed in the form of a wafer, especially in a heating state and a cooling state. The method for testing a characteristic of a magnetic head, in which a wafer including a dummy read-element having a size equal to that of a completed read-element, a product read-element and a heat conductive section being provided in the vicinity of the dummy read-element is tested as a test sample, comprises the steps of: applying an external magnetic field to the test sample; bringing a heat conducting member into contact with the heat conductive section so as to heat or cool the dummy read-element via the heat conductive section; and testing an electromagnetic conversion characteristic of the dummy read-element in a heating state or a cooling state. | 10-01-2009 |
20090244753 | MONITORING ELEMENT FOR A MAGNETIC RECORDING HEAD AND METHOD OF MANUFACTURING A MAGNETIC RECORDING HEAD - A monitoring element for a magnetic recording head makes it possible to know the form of a magnetic pole of the magnetic recording head without destroying the element. The monitoring element for a magnetic recording head is formed on a workpiece for magnetic recording heads on which element magnetic poles of the magnetic recording heads are formed. The monitoring element includes a monitoring magnetic pole formed of a same material and in a same form as the element magnetic poles and monitoring terminals that are electrically connected to the monitoring magnetic pole. | 10-01-2009 |
20090293619 | METHOD AND APPARATUS FOR EVALUATING ADHESION STRENGTH OF A THIN FILM - A method and apparatus for evaluating the adhesion strength of a thin film are capable of quantitatively and qualitatively evaluating the adhesion strength of thin films that were difficult to evaluate with conventional methods. The method of evaluating the adhesion strength of a thin film includes: a step of placing an ultrasonic vibration needle in contact with one of an edge portion in a planar direction of a thin film formed on a substrate and a periphery of the edge portion, and applying ultrasonic vibration; a step of detecting occurrences of detachment at the edge portion of the thin film after application of the ultrasonic vibration; and a step of evaluating the adhesion strength of the thin film on the substrate according to the occurrences of detachment. | 12-03-2009 |