Yoon-Dong
Yoon-Dong Cho, Gyeonggi-Do KR
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20130240888 | METHOD OF FABRICATING THIN FILM TRANSISTOR SUBSTRATE AND ORGANIC LIGHT EMITTING DISPLAY DEVICE USING THE SAME - A method of fabricating a thin film transistor substrate includes: forming a polymer layer on a glass substrate; forming a passivation layer on the polymer layer; forming a thin film transistor array on the passivation layer; and separating the glass substrate from the polymer layer by irradiating a laser from a rear surface of the glass substrate. | 09-19-2013 |
Yoon-Dong Kim, Yongin-Si KR
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20110139489 | PRINTED CIRCUIT BOARD - A printed circuit board is disclosed. The printed circuit board in accordance with an embodiment of the present invention can include an insulation substrate, a first ground, which is formed on one surface of the insulation substrate and connected to a first power source, a second ground, which is formed on one surface of the insulation substrate and connected to a second power source, a separator, which separates the first ground from the second ground, a first signal line, which is stacked on at least one of the first ground and the second ground, and a second signal line, which is stacked on at least one of the first ground and the second ground and is adjacent to the first signal line. The separator can include a curved part, which is bent in between the first signal line and the second signal line. | 06-16-2011 |
Yoon-Dong Park, Yongln-Si KR
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20090146198 | Photodiodes, image sensing devices and image sensors - Provided are photodiodes, image sensing devices and image sensors. An image sensing device includes a p-n junction photodiode having a metal pattern layer on an upper surface thereof. An image sensor includes the image sensing device and a micro-lens formed above the metal pattern layer. The metal pattern layer filters light having a first wavelength. | 06-11-2009 |
Yoon-Dong Park, Gyeonggi-Do KR
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20100012186 | Bulb-Type Light Concentrated Solar Cell Module - Provided is a bulb-type light concentrated solar cell module that includes a reflective mirror unit that is concavely formed to convergingly reflect sunlight and has a first hole on a bottom thereof; a solar cell that generates electrical energy in response to light received from the reflective mirror unit; a socket that blocks the first hole at a lower part of the reflective mirror unit and is fixed on the reflective mirror unit; and a power control unit that is electrically connected to the solar cell to generate electricity in the socket. | 01-21-2010 |
20100065899 | SEMICONDUCTOR DEVICES INCLUDING AUXILIARY GATE ELECTRODES AND METHODS OF FABRICATING THE SAME - A semiconductor device may include first and second auxiliary gate electrodes and a semiconductor layer crossing the first and second auxiliary gate electrodes. A primary gate electrode may be provided on the semiconductor layer so that the semiconductor layer is between the primary gate electrode and the first and second auxiliary gate electrodes. Moreover, the first and second auxiliary gate electrodes may be configured to induce respective first and second field effect type source/drain regions in the semiconductor layer. Related methods are also discussed. | 03-18-2010 |
20100067301 | COLUMNAR NON-VOLATILE MEMORY DEVICES WITH AUXILIARY TRANSISTORS AND METHODS OF OPERATING THE SAME - A non-volatile memory device includes at least one semiconductor column having a first sidewall and a second sidewall. The device also includes at least one gate electrode is disposed on the first sidewall and at least one control gate electrode disposed on the second sidewall. The device further includes at least one charge storage layer is disposed between the second sidewall and the at least one control gate electrode. The at least one gate electrode and the at least one control gate electrode may be disposed on opposite sides of the at least one semiconductor column such that they commonly control a channel region in the semiconductor column. | 03-18-2010 |
20110128430 | Image Sensors Having Multiple Photoelectric Conversion Devices Therein - Image sensors include a second photoelectric conversion device disposed in a lower portion of a substrate and a first photoelectric conversion device extending between the secondary photoelectric conversion device and a light receiving surface of the substrate. Electrical isolation between the first and second photoelectric conversion devices is provided by a photoelectron barrier, which may be an optically transparent electrically insulating material. MOS transistors may be utilized to transfer photoelectrons generated within the first and second photoelectric conversion devices to a floating diffusion region within the image sensor. These transistors may represent one example of means for transferring photoelectrons generated in the first and second photoelectric conversion devices to a floating diffusion region in the substrate, in response to first and second gating signals, respectively. The first and second gating signals may be active during non-overlapping time intervals. | 06-02-2011 |
Yoon-Dong Park, Yangsan-Ro KR
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20150195044 | POLARIZATION-CONTROLLED OPTICAL CHANNEL AND MEMORY DEVICE INCLUDING THE SAME - A memory system includes a memory controller, a plurality of memory modules, and a memory bus connecting the memory controller and the plurality of memory modules. The memory bus includes at least one polarization-controlled optical channel configured to control a polarization of transmission light in response to a plurality of selection signals in order to transfer the transmission light to a target memory module among the plurality of memory modules. The transmission light is linearly-polarized light provided from the memory controller, and the plurality of selection signals correspond to the plurality of memory modules, respectively. | 07-09-2015 |
Yoon-Dong Park, Yongin-Si-Si KR
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20090052239 | Nonvolatile memory devices and data reading methods - Methods of reading memory cell data and nonvolatile memory devices, which apply a low voltage to memory cells adjacent to a memory cell from which data may be read are provided. Methods of reading memory cell data of nonvolatile memory device include applying a first voltage to a control gate of a read memory cell from among the plurality of memory cells, applying a third voltage to control gates of memory cell adjacent to the read memory cell, and applying a second voltage to control gates of memory cells other than the read memory cell and the adjacent memory cells. | 02-26-2009 |
Yoon-Dong Park, Suwon-Si KR
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20100038719 | Semiconductor apparatuses and methods of manufacturing the same - Disclosed are semiconductor apparatuses and methods of fabricating the same. According to the methods, the number of operations for fabricating the semiconductor apparatuses having a plurality of layers may be the same as the number of operations for fabricating a semiconductor apparatus having one layer. The semiconductor apparatuses may include first active regions extending in the same direction, in parallel, separated from each other and including first and second impurity doped regions on opposite ends of the first active regions from each other. The semiconductor apparatuses may further include second active regions on a layer above the first active regions, extending in the same direction as the first active regions, separated from each other, in parallel, and including first and second impurity doped regions on opposite ends of the second active regions from each other. | 02-18-2010 |