Patent application number | Description | Published |
20080233323 | ORIENTING, POSITIONING, AND FORMING NANOSCALE STRUCTURES - A method. A first copolymer is provided. A substrate is provided having an energetically neutral surface layer with at least one trough integrally disposed thereon with sidewalls. A first film of the first copolymer is coated inside the trough. Line-forming microdomains are assembled of the first copolymer forming first self-assembled structures within the first film normal to the sidewalls and parallel to the surface layer. The first and second polymer blocks are removed from the first film and oriented structures remain in the trough normal to the sidewalls and parallel to the surface layer. A second film of a second copolymer is coated inside the trough. Line-forming microdomains are assembled of the second copolymer, and form second self-assembled structures within the second film oriented normal to the oriented structures and parallel to the sidewalls. The third and fourth polymer blocks are removed, and at least one second oriented structure remains. | 09-25-2008 |
20080233343 | ORIENTING, POSITIONING, AND FORMING NANOSCALE STRUCTURES - Methods and a structure. A first film of a first block copolymer is formed inside a trough integrally disposed on an energetically neutral surface layer of a substrate. Line-forming microdomains are assembled of the first block copolymer, and form first self-assembled structures within the first film normal to the sidewalls and parallel to the surface layer. At least one microdomain is removed from the first film such that oriented structures remain in the trough oriented normal to the sidewalls and parallel to the surface layer. A second film of a second block copolymer is formed inside the trough. Line-forming microdomains are assembled of the second block copolymer, and form second self-assembled structures within the second film oriented normal to the oriented structures and parallel to the sidewalls. A second method and a structure are also provided. | 09-25-2008 |
20080277796 | ELECTRONIC STRUCTURES UTILIZING ETCH RESISTANT BORON AND PHOSPHORUS MATERIALS AND METHODS TO FORM SAME - A dense boron-based or phosphorus-based dielectric material is provided. Specifically, the present invention provides a dense boron-based dielectric material comprised of boron and at least one of carbon, nitrogen, and hydrogen or a dense phosphorus-based dielectric comprised of phosphorus and nitrogen. The present invention also provides electronic structures containing the dense boron-based or phosphorus-based dielectric as an etch stop, a dielectric Cu capping material, a CMP stop layer, and/or a reactive ion etching mask in a ULSI back-end-of-the-line (BEOL) interconnect structure. A method of forming the inventive boron-based or phosphorus-based dielectric as well as the electronic structure containing the same are also described in the present invention. | 11-13-2008 |
20080286467 | METHOD OF USE FOR PHOTOPATTERNABLE DIELECTRIC MATERIALS FOR BEOL APPLICATIONS - A method. The method includes dip coating a film of a composition on a silicon wafer substrate. The composition includes a polymer blend of a first polymer and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a polysilsesquioxane having silanol end groups. The composition includes a photosensitive acid generator, an organic base, and an organic crosslinking agent. The film is patternwise imaged and at least one region is exposed to radiation having a wavelength of about 248 nanometers. The film is baked, resulting in inducing crosslinking in the film. The film is developed resulting in removal of base-soluble unexposed regions of the film, wherein a relief pattern from the film remains. The relief pattern is cured at a temperature between about 300° C. and about 450° C., and the curing utilizes a combination of thermal treatment with UV radiation. | 11-20-2008 |
20090073849 | HIGH DENSITY DATA STORAGE MEDIUM - A data storage system includes a read/write head having a tip connected to a resistive path locally exerting heat at the tip when an electrical current is applied; and a data storage medium from which information is reproduced by scanning a surface of the medium with a tip positioned in contact therewith, the medium comprising: a substrate; and a polymer recording surface within which data bit values are determined by the topographical state at the bit location, characterized in that the polymer contains thermally reversible crosslinkages. | 03-19-2009 |
20090075472 | METHODS TO MITIGATE PLASMA DAMAGE IN ORGANOSILICATE DIELECTRICS - Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure. | 03-19-2009 |
20090100553 | SCANNING PROBE-BASED LITHOGRAPHY METHOD - A resist medium in which features are lithographically produced by scanning a surface of the medium with an AFM probe positioned in contact therewith. The resist medium comprises a substrate; and a polymer resist layer within which features are produced by mechanical action of the probe. The polymer contains thermally reversible crosslinkages. Also disclosed are methods that generally includes scanning a surface of the polymer resist layer with an AFM probe positioned in contact with the resist layer, wherein heating the probe and a squashing-type mechanical action of the probe produces features in the layer by thermally reversing the crosslinkages. | 04-16-2009 |
20090170342 | DIELECTRIC NANOSTRUCTURE AND METHOD FOR ITS MANUFACTURE - The present invention relates to dielectric nanostructures useful in semiconductor devices and other electronic devices and methods for manufacturing the dielectric nanostructures. The nanostructures generally comprises an array of isolated pillars positioned on a substrate. The methods of the present invention involve using semiconductor technology to manufacture the nanostructures from a mixture of a crosslinkable dielectric material and an amphiphilic block copolymer. | 07-02-2009 |
20090203225 | SiCOH FILM PREPARATION USING PRECURSORS WITH BUILT-IN POROGEN FUNCTIONALITY - A method of fabricating a dielectric material that has an ultra low dielectric constant (or ultra low k) using at least one organosilicon precursor is described. The organosilicon precursor employed in the present invention includes a molecule containing both an Si—O structure and a sacrificial organic group, as a leaving group. The use of an organosilicon precursor containing a molecular scale sacrificial leaving group enables control of the pore size at the nanometer scale, control of the compositional and structural uniformity and simplifies the manufacturing process. Moreover, fabrication of a dielectric film from a single precursor enables better control of the final porosity in the film and a narrower pore size distribution resulting in better mechanical properties at the same value of dielectric constant. | 08-13-2009 |
20090233226 | PHOTOPATTERNABLE DIELECTRIC MATERIALS FOR BEOL APPLICATIONS AND METHODS FOR USE - Compositions, a method, and a photopatternable blend. The compositions include a blend of a first and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a substituted silsesquioxane polymer. The second polymer is configured to undergo chemical crosslinking with the first polymer, the second polymer, or a combination thereof, upon exposure to light, thermal energy, or a combination thereof. The compositions include a photosensitive acid generator. The method includes forming a film. The film is patternwise imaged, and at least one region is exposed to radiation. After the imaging, the film is baked, wherein at least one exposed region is rendered substantially soluble. After the baking, the film is developed, wherein a relief pattern remains. The relief pattern is exposed to radiation. The relief pattern is baked. The relief pattern is cured. A chemically amplified positive-tone photopatternable blend is also described. | 09-17-2009 |
20090291389 | PHOTOPATTERNABLE DIELECTRIC MATERIALS FOR BEOL APPLICATIONS AND METHODS FOR USE - A method and a composition. The composition includes at least one carbosilane-substituted silsesquioxane polymer which crosslinks in the presence of an acid. The at least one carbosilane-substituted silsesquioxane polymer is soluble in aqueous base. The method includes forming a coating on a substrate. The coating includes one or more carbosilane-substituted silsesquioxane polymers. The carbosilane-substituted silsesquioxane polymer is soluble in aqueous base. The coating is exposed to radiation, resulting in generating a latent pattern in the coating. The exposed coating is baked at a first temperature less than about 150° C. The baked coating is developed, resulting in forming a latent image from the latent pattern in the baked coating. The latent image is cured at a second temperature less than about 500° C. | 11-26-2009 |
20100181677 | STRUCTURE WITH SELF ALIGNED RESIST LAYER ON AN INSULATING SURFACE AND METHOD OF MAKING SAME - A structure is provided with a self-aligned resist layer on an insulator surface and non-lithographic method of fabricating the same. The non-lithographic method includes applying a resist on a structure comprising at least one of interconnects formed in an insulator material. The method further comprises exposing the resist to energy and developing the resist to expose surfaces of the interconnects. The method further comprises depositing metal cap material on the exposed surfaces of the interconnects. | 07-22-2010 |
20100181678 | STRUCTURE WITH SELF ALIGNED RESIST LAYER ON AN INTERCONNECT SURFACE AND METHOD OF MAKING SAME - A structure is provided with a self-aligned resist layer on a surface of metal interconnects for use in forming air gaps in an insulator material and method of fabricating the same. The non-lithographic method includes applying a resist on a structure comprising at least one metal interconnect formed in an insulator material. The method further includes blanket-exposing the resist to energy and developing the resist to expose surfaces of the insulator material while protecting the metal interconnects. The method further includes forming air gaps in the insulator material by an etching process, while the metal interconnects remain protected by the resist. | 07-22-2010 |
20100311917 | METHODS FOR MAKING MULTI-BRANCHED POLYMERS - A method for making a multi-branched polymer includes reacting a first polymeric unit with a functional cyclic compound to form a functional macroinitiator compound with a cyclic moiety. The functional macroinitiator compound is reacted with an amine functional compound to open the cyclic moiety and form a first functional group and a second functional group. To form the branched polymer, at least one of a second polymeric unit is propagated from the first functional group and a third polymeric unit is propagated from the second functional group. | 12-09-2010 |
20100316960 | PATTERNING NANO-SCALE PATTERNS ON A FILM COMPRISING UNZIPPING POLYMER CHAINS - The invention concerns a method for patterning a surface of a material. A substrate having a polymer film thereon is provided. The polymer is a selectively reactive polymer (e.g. thermodynamically unstable): it is able to unzip upon suitable stimulation. A probe is used to create patterns on the film. During the patterning, the film is locally stimulated for unzipping polymer chains. Hence, a basic idea is to provide a stimulus to the polymeric material, which in turn spontaneously decomposes e.g. into volatile constituents. For example, the film is thermally stimulated in order to break a single bond in a polymer chain, which is sufficient to trigger the decomposition of the entire polymer chain. | 12-16-2010 |
20110002841 | Methods of Forming Metal Oxide Nanostructures, and Nanostructures Thereof - A method of forming a metal oxide nanostructure comprises disposing a chelated oligomeric metal oxide precursor on a solvent-soluble template to form a first structure comprising a deformable chelated oligomeric metal oxide precursor layer; setting the deformable chelated oligomeric metal oxide precursor layer to form a second structure comprising a set metal oxide precursor layer; dissolving the solvent-soluble template with a solvent to form a third structure comprising the set metal oxide precursor layer; and thermally treating the third structure to form the metal oxide nanostructure. | 01-06-2011 |
20110020533 | SCANNING PROBE-BASED LITHOGRAPHY METHOD - A resist medium in which features are lithographically produced by scanning a surface of the medium with an AFM probe positioned in contact therewith. The resist medium comprises a substrate; and a polymer resist layer within which features are produced by mechanical action of the probe. The polymer contains thermally reversible crosslinkages. Also disclosed are methods that generally includes scanning a surface of the polymer resist layer with an AFM probe positioned in contact with the resist layer, wherein heating the probe and a squashing-type mechanical action of the probe produces features in the layer by thermally reversing the crosslinkages. | 01-27-2011 |
20110101489 | SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAME - A low-k dielectric material with increased cohesive strength for use in electronic structures including interconnect and sensing structures is provided that includes atoms of Si, C, O, and H in which a fraction of the C atoms are bonded as Si—CH | 05-05-2011 |
20110243848 | STAR POLYMERS, METHODS OF PREPARATION THEREOF, AND USES THEREOF - A composition of matter comprising an amphiphilic star polymer, the star polymer comprising a crosslinked microgel core and 6 or more independent polymer arms covalently linked to the core, the 6 or more arms each comprising a hydrophilic polymer chain segment and a hydrophobic polymer chain segment; wherein each individual metal selected from the group consisting of beryllium, magnesium, calcium, strontium, barium, radium, aluminum, gallium, indium, thallium, germanium, tin, lead, arsenic, antimony, bismuth, tellurium, polonium, and metals of Groups 3 to 12 of the Periodic Table has a concentration in the star polymer of greater than or equal to 0 parts per million and less than or equal to 100 parts per million. | 10-06-2011 |
20110315553 | METHOD OF PURIFYING NANOPARTICLES IN A COLLOID - Nanoparticles in a colloid are purified, with the colloid including a fluid, unwanted matter, and the nanoparticles to be purified. An electric field is applied that is substantially spatially uniform over a distance that is at least equal to a characteristic dimension of the nanoparticles, so that at least some of the nanoparticles move towards at least one collection surface as a result of the force arising between their electrical charge and the electric field, whereupon nanoparticles are collected on said at least one collection surface. The collection surface(s) may be one or more electrodes to which a voltage potential is applied. The collected nanoparticles are then removed from the collection surface, e.g., by dispersing them into another fluid. | 12-29-2011 |
20120152448 | METHOD OF FORMING NANOSTRUCTURES - Layered nanostructures are constructed by imprinting material with a mold, while selectively modifying and removing a portion of the mold. The mold, which includes a pattern of features, is modified so that the portion of the mold that includes the features is made chemically and/or physically distinct from the rest of the mold. That portion of the mold that includes the features is retained while the rest of the mold is removed. The retained portion of the mold provides mechanical support for any adjoining layer or layers. | 06-21-2012 |
20120168953 | STRUCTURE WITH SELF ALIGNED RESIST LAYER ON AN INTERCONNECT SURFACE AND METHOD OF MAKING SAME - A structure is provided with a self-aligned resist layer on a surface of metal interconnects for use in forming air gaps in an insulator material and method of fabricating the same. The non-lithographic method includes applying a resist on a structure comprising at least one metal interconnect formed in an insulator material. The method further includes blanket-exposing the resist to energy and developing the resist to expose surfaces of the insulator material while protecting the metal interconnects. The method further includes forming air gaps in the insulator material by an etching process, while the metal interconnects remain protected by the resist. | 07-05-2012 |
20120308476 | METHODS OF FORMING METAL OXIDE NANOSTRUCTURES, AND NANOSTRUCTURES THEREOF - A method of forming a metal oxide nanostructure comprises disposing a chelated oligomeric metal oxide precursor on a solvent-soluble template to form a first structure comprising a deformable chelated oligomeric metal oxide precursor layer; setting the deformable chelated oligomeric metal oxide precursor layer to form a second structure comprising a set metal oxide precursor layer; dissolving the solvent-soluble template with a solvent to form a third structure comprising the set metal oxide precursor layer; and thermally treating the third structure to form the metal oxide nanostructure. | 12-06-2012 |
20120329269 | METHODS TO MITIGATE PLASMA DAMAGE IN ORGANOSILICATE DIELECTRICS - Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure. | 12-27-2012 |
20130110467 | ULTRASENSITIVE BIOLOGICAL AND CHEMICAL DETECTION USING SURFACE PLASMON RESONANCE | 05-02-2013 |
20130189836 | PHOTO-PATTERNABLE DIELECTRIC MATERIALS CURABLE TO POROUS DIELECTRIC MATERIALS, FORMULATIONS, PRECURSORS AND METHODS OF USE THEREOF - Silsesquioxane polymers that cure to porous silsesquioxane polymers, silsesquioxane polymers that cure to porous silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers that cure to porous silsesquioxane polymers, structures containing porous silsesquioxane polymers and monomers and method of preparing monomers for silsesquioxane polymers that cure to porous silsesquioxane polymers. | 07-25-2013 |
20130193551 | STRUCTURE WITH SELF ALIGNED RESIST LAYER ON AN INTERCONNECT SURFACE AND METHOD OF MAKING SAME - A structure is provided with a self-aligned resist layer on a surface of metal interconnects for use in forming air gaps in an insulator material and method of fabricating the same. The non-lithographic method includes applying a resist on a structure comprising at least one metal interconnect formed in an insulator material. The method further includes blanket-exposing the resist to energy and developing the resist to expose surfaces of the insulator material while protecting the metal interconnects. The method further includes forming air gaps in the insulator material by an etching process, while the metal interconnects remain protected by the resist. | 08-01-2013 |
20130197253 | PHOTO-PATTERNABLE DIELECTRIC MATERIALS CURABLE TO POROUS DIELECTRIC MATERIALS, FORMULATIONS, PRECURSORS AND METHODS OF USE THEREOF - Silsesquioxane polymers that cure to porous silsesquioxane polymers, silsesquioxane polymers that cure to porous silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers that cure to porous silsesquioxane polymers, structures containing porous silsesquioxane polymers and monomers and method of preparing monomers for silsesquioxane polymers that cure to porous silsesquioxane polymers. | 08-01-2013 |
20130207278 | PHOTO-PATTERNABLE DIELECTRIC MATERIALS CURABLE TO POROUS DIELECTRIC MATERIALS, FORMULATIONS, PRECURSORS AND METHODS OF USE THEREOF - Silsesquioxane polymers that cure to porous silsesquioxane polymers, silsesquioxane polymers that cure to porous silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers that cure to porous silsesquioxane polymers, structures containing porous silsesquioxane polymers and monomers and method of preparing monomers for silsesquioxane polymers that cure to porous silsesquioxane polymers. | 08-15-2013 |
20130309466 | STRUCTURE INCLUDING A MATERIAL HAVING A PREDEFINED MORPHOLOGY - A structure. The structure includes a substrate and a material adhered to said substrate. The material includes a structural layer and an interfacial layer. The structural layer includes at least one crosslinkable polymer and nanostructures having a predefined morphology. The nanostructures are surrounded by the at least one crosslinkable polymer in the structural layer. The interfacial layer essentially lacks nanostructures and includes essentially the at least one crosslinkable polymer. | 11-21-2013 |
20140370064 | FILM-FORMING COMPOSITIONS OF SELF-CROSSLINKABLE NANOGEL STAR POLYMERS - A film-forming composition comprises a solvent and unimolecular nanoparticles of a self-crosslinkable nanogel star polymer. The nanogel star polymer comprises i) a crosslinked polymer core (nanogel core) and ii) 6 or more independent polymer arms covalently linked to the core by respective first end groups. A plurality of the arms comprise reactive groups for effecting crosslinking of the nanoparticles. An essentially solvent-free film layer comprising the nanoparticles self-crosslinks, optionally assisted by subjecting the film layer to a thermal treatment and/or a photochemical treatment. A surface treated article comprising the crosslinked film layer can effectively inhibit growth of and/or kill Gram-negative microbes, Gram-positive microbes, fungi, and/or yeasts. | 12-18-2014 |