Patent application number | Description | Published |
20080216959 | PLASMA PROCESSING APPARATUS - The present invention provides a plasma processing apparatus which has the function of removing a deposit adhering to the periphery of the backside of a sample and has high throughput and low cost. That is, a deposit removal unit for removing the deposit on the periphery of the backside of the sample by pulsed laser irradiation is connected to an atmosphere-side transfer chamber of the plasma processing apparatus. | 09-11-2008 |
20080236748 | PLASMA PROCESSING APPARATUS - In a plasma processing apparatus including a processing chamber, a high-frequency power supply needed for plasma production, a unit that feeds a gas to the processing chamber, a shower plate, an exhausting unit that depressurizes the processing chamber, a stage on which a sample to be processed is placed, and a focus ring, the temperature of the focus ring can be regulated. A unit that measures a gas temperature distribution in the processing chamber is included. Based on the result of measurement of the gas temperature distribution, the temperature of the focus ring is controlled so that the gas temperature in the surface of the sample to be processed will be uniform. | 10-02-2008 |
20080277061 | WAFER EDGE CLEANER - An object of the present invention is to provide a wafer edge cleaner which is capable of removing an undesired material that adheres to an outer periphery of an object to be processed at the low costs and with high throughput. The wafer edge cleaner according to the present invention irradiates a deposited material that has adhered to the rear surface outer periphery of the object to be processed with a laser beam that is at least 30 kW/mm | 11-13-2008 |
20090294060 | Semiconductor Device Manufacturing Apparatus Capable Of Reducing Particle Contamination - A semiconductor device manufacturing apparatus includes a process chamber, a conveyance chamber, a conveyance robot, a lock chamber, and a heating unit or temperature adjusting unit for reducing adherence of particles onto a substance to be processed by a thermo-phoretic force. The heating unit enables control of a temperature of the substance to be processed to be higher than a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the conveyance robot or the lock chamber, in conveying the substance to be processed. The temperature adjusting unit enables adjustment of a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the lock chamber to be lower than a temperature of the substance to be processed, in conveying the substance to be processed. | 12-03-2009 |
20110100555 | Semiconductor Device Manufacturing Apparatus Capable Of Reducing Particle Contamination - A semiconductor device manufacturing apparatus includes a process chamber, a conveyance chamber, a conveyance robot, a lock chamber, and a heating unit or temperature adjusting unit for reducing adherence of particles onto a substance to be processed by a thermo-phoretic force. The heating unit enables control of a temperature of the substance to be processed to be higher than a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the conveyance robot or the lock chamber, in conveying the substance to be processed. The temperature adjusting unit enables adjustment of a temperature of an inner wall or structural body of the process chamber or the conveyance chamber or the lock chamber to be lower than a temperature of the substance to be processed, in conveying the substance to be processed. | 05-05-2011 |
20120003837 | Semiconductor Device Manufacturing Apparatus Capable Of Reducing Particle Contamination - A plasma processing method of subjecting a substance to plasma processing by using a semiconductor device manufacturing apparatus including a process chamber, a unit for supplying gas to the process chamber, an exhausting unit to reduce pressure in the process chamber, a high frequency power source for plasma generation, a coil for generating a magnetic field, and a mounted electrode for mounting the substance to be processed. The method includes steps of subjecting the substance to a predetermined plasma processing, changing the magnetic field distribution, so as to make a plasma distribution of the process chamber with respect to the surface of the substance to be processed, in a convex form, at a time of igniting the plasma and after completion of the predetermined plasma processing, as compared with a plasma distribution with respect to the surface of the substance to be processed during the predetermined plasma processing. | 01-05-2012 |
Patent application number | Description | Published |
20090004871 | PROCESSING METHOD AND PLASMA PROCESSING DEVICE - A plasma processing method using plasma includes steps of applying current to a coil and introducing gas into a processing chamber, applying a bias power that does not generate plasma, applying a source power to generate plasma so that a plasma density distribution is high above an outer circumference of a semiconductor wafer and low above a center of the semiconductor wafer, and forming a shape of a sheath layer having a positive ion space charge directly above the semiconductor wafer so as to be convex in an upper direction from the semiconductor wafer, thereby eliminating foreign particles trapped in a boundary of the sheath layer having a positive ion space charge directly above the semiconductor wafer, generating plasma for processing the semiconductor wafer under a condition different from the conditions of the previous steps. | 01-01-2009 |
20110100954 | PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS - In processing a magnetic film composed for example of Fe, Co or Ni formed on a substrate and a nonvolatile metal containing the same in a vacuum reactor using a plasma generating gas for generating plasma and a gas containing C and O, a power applied to an antenna for generating plasma is time-modulated, wherein the feeding of gas containing C and O to the vacuum reactor is synchronized with the time-modulated antenna power so that the supply of gas containing C and O to the vacuum reactor is suppressed when the antenna power is high and the gas containing C and O is fed to the vacuum reactor when the antenna power is low. | 05-05-2011 |
20130200042 | PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS - In processing a magnetic film composed for example of Fe, Co or Ni formed on a substrate and a nonvolatile metal containing the same in a vacuum reactor using a plasma generating gas for generating plasma and a gas containing C and O, a power applied to an antenna for generating plasma is time-modulated, wherein the feeding of gas containing C and O to the vacuum reactor is synchronized with the time-modulated antenna power so that the supply of gas containing C and O to the vacuum reactor is suppressed when the antenna power is high and the gas containing C and O is fed to the vacuum reactor when the antenna power is low. | 08-08-2013 |
Patent application number | Description | Published |
20100124155 | ROTARY DISK ECCENTRICITY MEASUREMENT METHOD, ROTARY ENCODER, AND IMAGE FORMING APPARATUS INCLUDING THE ROTARY ENCODER - An eccentricity measurement method of measuring the eccentricity of a rotary disk of a rotary encoder includes forming, on the rotary disk, at least one first straight-line pattern group in a different radial direction including a plurality of straight-line patterns that are equally spaced in the radial direction and extend in a normal line direction from a base point a predetermined distance away from a center of a radial scale of the rotary disk; placing the rotary disk on a table including at least one second straight-line pattern group including straight-line patterns; and measuring the amount and the direction of the eccentricity of the rotary disk in accordance with the position of the straight-line pattern of the first straight-line pattern group that coincides with the position of the straight line pattern of the second straight-line pattern group in the radial direction. | 05-20-2010 |
20130022381 | FUSER AND IMAGE-FORMING APPARATUS - A fuser includes a cylindrical heating rotating body including a heat generator and a pressure rotating body including a circumferential face which has contact with the heating rotating body to form a nip portion for fusing, wherein a disk-like outside plate, which is exposed outside, is provided in one end or both ends of the heating rotating body in a rotation axis direction, a disk-like inside plate is provided in an inner circumferential face of the heating rotating body on an inside of the outside plate to have an interval relative to the outside plate, a center vent is provided near a center of the outside plate, an outer edge vent is provided in an outer edge or the neighborhood thereof of the outside plate, and a flow path, which connects the center vent and the outer edge vent, is provided between the outside vent and the inside vent. | 01-24-2013 |
Patent application number | Description | Published |
20090194235 | PLASMA PROCESSING APPARATUS - The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber | 08-06-2009 |
20100006225 | Plasma processing apparatus - To make it possible to suppress deterioration of processing properties of a sample to be processed due to the distortion of ion sheath at the end portion of the sample to be processed or possible to maintain the condition for suppressing the deterioration, so that the acquisition rate of acceptable products can be increased, so as to thereby improve the yield. In a plasma processing apparatus, a minute hole | 01-14-2010 |
20100025369 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - To monitor the thickness of a focus ring consumed during wafer processing. A plasma processing apparatus includes a vacuum chamber | 02-04-2010 |
20100029024 | PLASMA PROCESSING METHOD - The invention provides a plasma processing method capable of reducing the damage applied to the low-k film or the underlayer. The method uses a plasma processing apparatus comprising gas supply means | 02-04-2010 |
20130199728 | PLASMA PROCESSING APPARATUS - The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber | 08-08-2013 |
20140231015 | PLASMA PROCESSING APPARATUS - The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber | 08-21-2014 |
Patent application number | Description | Published |
20080238172 | SEAT RECLINING APPARATUS FOR VEHICLE - A seat reclining apparatus for a vehicle includes first, second, and third gear mechanisms, each gear mechanism including a first frame having an internal gear and a second frame having an external gear engaging with the internal gear, the number of teeth of the external gear being fewer than the internal gear, wherein the first gear mechanism is provided at one side of a vehicle seat, and the second and third gear mechanisms are provided at the other side, a shaft connecting the first gear mechanism with the second and third gear mechanisms, and an electric motor rotating the shaft to shift an engagement position between the internal gear and the external gear for tilting the seatback relative to the seat cushion, wherein the electric motor is disposed at one of the first frame and the second frame of the first gear mechanism provided at the one side. | 10-02-2008 |
20080246299 | SEAT APPARATUS FOR VEHICLE - A seat apparatus for a vehicle, which includes an inner slide rail, an outer slide rail including an outer upper rail and an outer lower rail, a seat cushion provided slidably in a longitudinal direction of the vehicle and configured to be flipped up to a wall portion of the vehicle compartment to be in a storage position, a hinge mechanism fixing the outer upper rail to the seat cushion, a bearing smoothly sliding the outer upper rail relative to the outer lower rail, a spring provided around a rotational shaft of the hinge mechanism for biasing the seat cushion in a direction to be flipped up, and at least one rotating member provided between the outer upper rail and the outer lower rail so as to receive a load in a lateral direction of the vehicle applied to the outer upper rail by the spring. | 10-09-2008 |
Patent application number | Description | Published |
20110221302 | BISMUTH IRON OXIDE POWDER, MANUFACTURING METHOD FOR THE BISMUTH IRON OXIDE POWDER, DIELECTRIC CERAMICS, PIEZOELECTRIC ELEMENT, LIQUID DISCHARGE HEAD, AND ULTRASONIC MOTOR - Provided is a lead-free dielectric ceramics having a low leakage current value, and a bismuth iron oxide powder as a raw material thereof. The bismuth iron oxide powder includes at least: (A) grains including a bismuth iron oxide having a perovskite-type crystal structure; (B) grains including a bismuth iron oxide having a crystal structure classified to a space group Pbam; and (C) grains including a bismuth iron oxide or a bismuth oxide having a crystal structure that is classified to a space group I23. The dielectric ceramics are made of bismuth iron oxide in which the bismuth iron oxide crystals having the crystal structure classified to the space group Pbam are distributed at a grain boundary of crystal grains of the bismuth iron oxide crystals having the perovskite-type crystal structure. | 09-15-2011 |
20140178290 | BISMUTH IRON OXIDE POWDER, MANUFACTURING METHOD FOR THE BISMUTH IRON OXIDE POWDER, DIELECTRIC CERAMICS, PIEZOELECTRIC ELEMENT, LIQUID DISCHARGE HEAD, AND ULTRASONIC MOTOR - Provided is a lead-free dielectric ceramics having a low leakage current value, and a bismuth iron oxide powder as a raw material thereof. The bismuth iron oxide powder includes at least: (A) grains including a bismuth iron oxide having a perovskite-type crystal structure; (B) grains including a bismuth iron oxide having a crystal structure classified to a space group Pbam; and (C) grains including a bismuth iron oxide or a bismuth oxide having a crystal structure that is classified to a space group I23. The dielectric ceramics are made of bismuth iron oxide in which the bismuth iron oxide crystals having the crystal structure classified to the space group Pbam are distributed at a grain boundary of crystal grains of the bismuth iron oxide crystals having the perovskite-type crystal structure. | 06-26-2014 |
20140292160 | PIEZOELECTRIC MATERIAL, PIEZOELECTRIC ELEMENT, MULTILAYERED PIEZOELECTRIC ELEMENT, LIQUID EJECTION HEAD, LIQUID EJECTION APPARATUS, ULTRASONIC MOTOR, OPTICAL EQUIPMENT, VIBRATION APPARATUS, DUST REMOVING APPARATUS, IMAGING APPARATUS, AND ELECTRONIC EQUIPMENT - Provided is a lead-free piezoelectric material having a satisfactory and stable piezoelectric constant and electric insulation property in a wide practical temperature range. Provided is a piezoelectric material, including a perovskite-type metal oxide represented by the following general formula (1) as a main component, the piezoelectric material containing Mn in a content of 0.01 part by weight or more and 0.80 part by weight or less with respect to 100 parts by weight of the perovskite-type metal oxide: (Li | 10-02-2014 |
Patent application number | Description | Published |
20120186747 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus is provided with a processing chamber which is arranged inside a vacuum container and plasma is formed inside, a circular shape plate member made of a dielectric material arranged above the processing chamber through which an electric field is transmitted, and a cavity part having a cylindrical shape arranged above the plate member and the electric field is introduced inside, in which the cavity part is provided with a first cylindrical cavity part having a cylindrical shape cavity with a large diameter and having the plate member as the bottom face, a second cylindrical cavity part arranged above to be connected to the first cylindrical cavity part and having a cylindrical shape cavity with a small diameter, and a step portion for connecting these between the first and the second cylindrical cavity parts. | 07-26-2012 |
20120325146 | Plasma Processing Apparatus - Disclosed is a plasma processing apparatus which performs plasma processing under substantially atmospheric pressure to a non-planar subject to be processed. In the plasma processing apparatus, a pair of conductive wires are disposed at an interval of 1 mm or less on a dielectric board that conforms with the shape of the subject, the conductive wires are covered with a dielectric thin film having a thickness of 1 mm or less by, for instance, thermally spraying a dielectric material over the conductive wires, and plasma is generated along the shape of subject by applying high-frequency power to the pair of conductive wires. | 12-27-2012 |
20130045604 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus which can adjust ion energy on a wafer to a value in a desired range to perform machining with high precision or processing stably for a long time is provided. To the plasma processing apparatus which processes a wafer mounted on a mounting surface of an upper portion of a stage using plasma formed in a processing chamber while supplying radio frequency power from a power supply to an electrode disposed in the stage a detector disposed on an outer circumferential side of the mounting surface of the stage to detect a differential component Vpp between the maximum value and the minimum value and a DC component Vdc from a value of a bias voltage formed thereabove and a controller to adjust an output of the radio frequency bias power to make a value of Vpp/2+|Vdc| constant based on an output from the detector are provided. | 02-21-2013 |
20130267098 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus is offered which has evacuable vacuum vessel, processing chamber disposed inside the vacuum vessel and having inside space in which plasma for processing sample to be processed is generated and in which the sample is placed, unit for supplying gas for plasma generation into processing chamber, vacuum evacuation unit for evacuating inside of processing chamber, helical resonator configured of helical resonance coil disposed outside the vacuum vessel and electrically grounded shield disposed outside the coil, RF power supply of variable frequency for supplying RF electric power in given range to the resonance coil, and frequency matching device capable of adjusting frequency of the RF power supply so as to minimize reflected RF power. The resonance coil has electrical length that is set to integral multiple of one wavelength at given frequency. The helical resonance coil has feeding point connected to ground potential using variable capacitive device. | 10-10-2013 |
Patent application number | Description | Published |
20130016627 | NETWORK RELAY NODE DEVICE, NETWORK RELAY METHOD, AND RECORDING MEDIUM - A network relay node device for relaying communication between a first network and a second network having a protocol different from a protocol of the first network through a switch, the network relay node device includes an identical segment information generation control unit that generates identical segment information for identification of another relay node device belonging to a same segment as a local device in the second network and a loop suppression control unit that suppresses a loop of a communication including the switch by broadcasting a received broadcast frame only to a connection port of the first network if the identical segment information is detected in identification source node information acquired from a header of the broadcast frame when the broadcast frame is received from a connection port of the first network. | 01-17-2013 |
20140204728 | NODE EQUIPMENT AND METHOD FOR COMMUNICATION - A node equipment includes a receiver, a processor, a memory and a transmitter. The node equipment is relayed by a plurality of relay devices with a server. The receiver receives a frame from adjacent node equipment. The processor generates a wait number by incrementing a number of hops for each of the relay devices, when the number of hops to the adjacent node equipment is reported with a synchronization request, the number of hops being generated by designating each of the plurality of relay devices as a starting point. The memory stores the wait number in association with an identifier of the relay device. The transmitter transmits a data frame in which the server is designated as an address. The processor outputs to the transmitter a data frame in which a relay device having a relatively small wait number stored in the memory is designated as a relay destination. | 07-24-2014 |
20150049759 | NODE APPARATUS, DATA RELAY METHOD AND COMPUTER-READABLE RECORDING MEDIUM - A node apparatus includes a receiving unit receiving a data frame from one of adjacent nodes apparatuses; a storing unit storing an identification information management table in which frame identification information with which the data frame may be uniquely identified, and overlapped data identification information; a processor which performs a process including: judging whether or not a final destination of the received data frame is the node apparatus itself; judging whether or not a registration that matches the frame identification information of the received data frame exists in the identification information management table; judging whether or not the overlapped data identification information of the received data frame and the overlapped data identification information corresponding to the registration match; and discarding the received data frame; and performing a retransmission of the received data frame to another adjacent node that has not been a transmission destination of the data frame. | 02-19-2015 |