Patent application number | Description | Published |
20090162498 | GRAIN PRODUCTS HAVING A NON-SWEETENING AMOUNT OF A POTENT SWEETENER - Comestible grain products are provided, e.g. cereal, oatmeal, snack bars, etc., including at least one grain constituent and a non-sweetening amount of at least one potent sweetener. The non-sweetening amount of potent sweetener may comprise a natural potent sweetener, an artificial potent sweetener, or a mixture of both. The non-sweetening amount of potent sweetener can modify the taste of the comestible grain product by decreasing or eliminating one or more undesirable taste characteristics, creating or increasing one or more desirable taste characteristics, or any combination of these. | 06-25-2009 |
20090162499 | GRAIN PRODUCTS HAVING A POTENT NATURAL SWEETENER AND A BULKING AGENT - Grain products comprising at least one constituent of at least one grain, at least one potent natural sweetener and at least one bulking agent are provided, wherein the coating provides enhanced bowl life for the grain product. Methods of increasing bowl life of a grain product are also provided. | 06-25-2009 |
20090162500 | GRAIN PRODUCTS HAVING A POTENT NATURAL SWEETENER - Grain products are disclosed comprising at least a grain base and a coating enrobing at least a portion of the base, having a sweetening amount of a potent natural sweetener present in the base and the coating. | 06-25-2009 |
Patent application number | Description | Published |
20120086728 | SYSTEM AND METHOD FOR TRANSITIONING BETWEEN INTERFACE MODES IN VIRTUAL AND AUGMENTED REALITY APPLICATIONS - One preferred embodiment of the present invention includes a method for transitioning a user interface between viewing modes. The method of the preferred embodiment can include detecting an orientation of a mobile terminal including a user interface disposed on a first side of the mobile terminal, wherein the orientation of the mobile terminal includes an imaginary vector originating at a second side of the mobile terminal and projecting in a direction substantially opposite the first side of the mobile terminal. The method of the preferred embodiment can also include transitioning between at least two viewing modes in response to the imaginary vector intersecting an imaginary sphere disposed about the mobile terminal at a first latitudinal point having a predetermined relationship to a critical latitude of the sphere. | 04-12-2012 |
20120212405 | SYSTEM AND METHOD FOR PRESENTING VIRTUAL AND AUGMENTED REALITY SCENES TO A USER - A method according to a preferred embodiment can include providing an embeddable interface for a virtual or augmented reality scene, determining a real orientation of a viewer representative of a viewing orientation relative to a projection matrix, and determining a user orientation of a viewer representative of a viewing orientation relative to a nodal point. The method of the preferred embodiment can further include orienting the scene within the embeddable interface and displaying the scene within the embeddable interface on a device. | 08-23-2012 |
20120214590 | SYSTEM AND METHOD FOR ACQUIRING VIRTUAL AND AUGMENTED REALITY SCENES BY A USER - A preferred method of acquiring virtual or augmented reality (VAR) scenes can include at a plurality of locations of interest, providing one or more users with a predetermined pattern for image acquisition with an image capture device and for each of the one or more users, in response to a user input, acquiring at least one image at the location of interest. The method of the preferred embodiment can also include for each of the one or more users, in response to the acquisition of at least one image, providing the user with feedback to ensure a complete acquisition of the virtual or augmented reality scene; and receiving at a remote database, from each of the one or more users, one or more VAR scenes. One variation of the method of the preferred embodiment can include providing game mechanics to promote proper image acquisition and promote competition between users. | 08-23-2012 |
20120218306 | SYSTEM AND METHOD FOR PRESENTING VIRTUAL AND AUGMENTED REALITY SCENES TO A USER - A method of presenting a scene to a user according to a preferred embodiment includes determining a real orientation of a device relative to a projection matrix and determining a user orientation of the device relative to a nodal point. The method of the preferred embodiment can further include orienting a scene displayable on the device to the user in response to the real orientation and the user orientation; and displaying the scene on the device. The method of the preferred embodiment can be performed by an apparatus and/or embodied in computer program product including machine-readable code. | 08-30-2012 |
20120236029 | SYSTEM AND METHOD FOR EMBEDDING AND VIEWING MEDIA FILES WITHIN A VIRTUAL AND AUGMENTED REALITY SCENE - A preferred method for viewing embedded media in a virtual and augmented reality (VAR) scene can include at a viewer device, defining a real orientation of the viewer device relative to a projection matrix; and orienting a VAR scene on the viewer device in response to the real orientation in block, in which the VAR scene includes one or both of visual data and orientation data. The preferred method can further include selecting a media file in the VAR scene, wherein the media file is selected at a media location correlated at least to the real orientation of the viewer device; and activating the media file in the VAR scene at the media location. The preferred method and variations thereof functions to allow a viewer to interact with media that is embedded, tagged, linked, and/or associated with a VAR scene viewable on the viewer device. | 09-20-2012 |
20120242656 | SYSTEM AND METHOD FOR PRESENTING VIRTUAL AND AUGMENTED REALITY SCENES TO A USER - A method of presenting a scene to a user according to a preferred embodiment includes determining a real orientation of a device relative to a projection matrix and determining a user orientation of the device relative to a nodal point. The method of the preferred embodiment can further include orienting a scene displayable on the device to the user in response to the real orientation and the user orientation; and displaying the scene on the device. Variations of the method can include a three-dimensional aspect of the scene with which the user can interact through manipulation of the real orientation and/or the user orientation of the device. The method of the preferred embodiment can be performed by an apparatus and/or embodied in computer program product including machine-readable code. | 09-27-2012 |
20120242798 | SYSTEM AND METHOD FOR SHARING VIRTUAL AND AUGMENTED REALITY SCENES BETWEEN USERS AND VIEWERS - A preferred method for sharing user-generated virtual and augmented reality scenes can include receiving at a server a virtual and/or augmented reality (VAR) scene generated by a user mobile device. Preferably, the VAR scene includes visual data and orientation data, which includes a real orientation of the user mobile device relative to a projection matrix. The preferred method can also include compositing the visual data and the orientation data into a viewable VAR scene; locally storing the viewable VAR scene at the server; and in response to a request received at the server, distributing the processed VAR scene to a viewer mobile device. | 09-27-2012 |
20120246223 | SYSTEM AND METHOD FOR DISTRIBUTING VIRTUAL AND AUGMENTED REALITY SCENES THROUGH A SOCIAL NETWORK - A preferred method for distributing virtual and augmented reality (VAR) scenes between users and viewers through a social network can include delivering one or more VAR scene parameters to a server and requesting a VAR scene from the server at which the VAR scene is hosted. The VAR scene can include both visual data and orientation data, and the orientation data can include at least a real orientation of a device relative to a projection matrix. The preferred method described herein can further include receiving the VAR scene from the server at a viewer device in response to the one or more VAR scene parameters. | 09-27-2012 |
20140092135 | SYSTEM AND METHOD FOR DYNAMICALLY DISPLAYING MULTIPLE VIRTUAL AND AUGMENTED REALITY SCENES ON A SINGLE DISPLAY - One variation of a method for dynamically displaying multiple virtual and augmented reality scenes on a single display includes determining a set of global transform parameters from a combination of user-defined inputs, user-measured inputs, and device orientation and position derived from sensor inputs; calculating a projection from a configurable function of the global transform parameters, context provided by the user and context specific to a virtual and augmented reality scene; rendering a virtual and augmented reality scene with the calculated projection on a subframe of the display; and repeating the previous two steps to render additional virtual and augmented reality scenes. | 04-03-2014 |
20140267418 | METHOD FOR SIMULATING NATURAL PERCEPTION IN VIRTUAL AND AUGMENTED REALITY SCENES - A preferred method for dynamically displaying virtual and augmented reality scenes can include determining input parameters, calculating virtual photometric parameters, and rendering a VAR scene with a set of simulated photometric parameters. | 09-18-2014 |
20150097867 | SYSTEM AND METHOD FOR TRANSITIONING BETWEEN INTERFACE MODES IN VIRTUAL AND AUGMENTED REALITY APPLICATIONS - One preferred embodiment of the present invention includes a method for transitioning a user interface between viewing modes. The method of the preferred embodiment can include detecting an orientation of a mobile terminal including a user interface disposed on a first side of the mobile terminal, wherein the orientation of the mobile terminal includes an imaginary vector originating at a second side of the mobile terminal and projecting in a direction substantially opposite the first side of the mobile terminal. The method of the preferred embodiment can also include transitioning between at least two viewing modes in response to the imaginary vector intersecting an imaginary sphere disposed about the mobile terminal at a first latitudinal point having a predetermined relationship to a critical latitude of the sphere. | 04-09-2015 |
20150113581 | SYSTEM AND METHOD FOR SHARING VIRTUAL AND AUGMENTED REALITY SCENES BETWEEN USERS AND VIEWERS - A preferred method for sharing user-generated virtual and augmented reality scenes can include receiving at a server a virtual and/or augmented reality (VAR) scene generated by a user mobile device. Preferably, the VAR scene includes visual data and orientation data, which includes a real orientation of the user mobile device relative to a projection matrix. The preferred method can also include compositing the visual data and the orientation data into a viewable VAR scene; locally storing the viewable VAR scene at the server; and in response to a request received at the server, distributing the processed VAR scene to a viewer mobile device. | 04-23-2015 |
20150201133 | SYSTEM AND METHOD FOR ACQUIRING VIRTUAL AND AUGMENTED REALITY SCENES BY A USER - A preferred method of acquiring virtual or augmented reality (VAR) scenes can include at a plurality of locations of interest, providing one or more users with a predetermined pattern for image acquisition with an image capture device and for each of the one or more users, in response to a user input, acquiring at least one image at the location of interest. The method of the preferred embodiment can also include for each of the one or more users, in response to the acquisition of at least one image, providing the user with feedback to ensure a complete acquisition of the virtual or augmented reality scene; and receiving at a remote database, from each of the one or more users, one or more VAR scenes. One variation of the method of the preferred embodiment can include providing game mechanics to promote proper image acquisition and promote competition between users. | 07-16-2015 |
20150243085 | TECHNIQUES FOR CAPTURING AND DISPLAYING PARTIAL MOTION IN VIRTUAL OR AUGMENTED REALITY SCENES - The present disclosure relates to techniques for capturing and displaying partial motion in VAR scenes. VAR scenes can include a plurality of images combined and oriented over any suitable geometry. Although VAR scenes may provide an immersive view of a static scene, current systems do not generally support VAR scenes that include dynamic content (e.g., content that varies over time). Embodiments of the present invention can capture, generate, and/or share VAR scenes. This immersive, yet static, view of the VAR scene lacks dynamic content (e.g., content which varies over time). Embodiments of the present invention can efficiently add dynamic content to the VAR scene, allowing VAR scenes including dynamic content to be uploaded, shared, or otherwise transmitted without prohibitive resource requirements. Dynamic content can be captured by device and combined with a preexisting or simultaneously captured VAR scene, and the dynamic content may be played back upon selection. | 08-27-2015 |
Patent application number | Description | Published |
20120028052 | GRAPHENE GROWTH ON A NON-HEXAGONAL LATTICE - A graphene layer is formed on a crystallographic surface having a non-hexagonal symmetry. The crystallographic surface can be a surface of a single crystalline semiconductor carbide layer. The non-hexagonal symmetry surface of the single crystalline semiconductor carbide layer is annealed at an elevated temperature in ultra-high vacuum environment to form the graphene layer. During the anneal, the semiconductor atoms on the non-hexagonal surface of the single crystalline semiconductor carbide layer are evaporated selective to the carbon atoms. As the semiconductor atoms are selectively removed, the carbon concentration on the surface of the semiconductor-carbon alloy layer increases. Despite the non-hexagonal symmetry of the surface of the semiconductor-carbon alloy layer, the remaining carbon atoms can coalesce to form a graphene layer having hexagonal symmetry. | 02-02-2012 |
20120112164 | FORMATION OF A GRAPHENE LAYER ON A LARGE SUBSTRATE - A single crystalline silicon carbide layer can be grown on a single crystalline sapphire substrate. Subsequently, a graphene layer can be formed by conversion of a surface layer of the single crystalline silicon layer during an anneal at an elevated temperature in an ultrahigh vacuum environment. Alternately, a graphene layer can be deposited on an exposed surface of the single crystalline silicon carbide layer. A graphene layer can also be formed directly on a surface of a sapphire substrate or directly on a surface of a silicon carbide substrate. Still alternately, a graphene layer can be formed on a silicon carbide layer on a semiconductor substrate. The commercial availability of sapphire substrates and semiconductor substrates with a diameter of six inches or more allows formation of a graphene layer on a commercially scalable substrate for low cost manufacturing of devices employing a graphene layer. | 05-10-2012 |
20120112198 | EPITAXIAL GROWTH OF SILICON CARBIDE ON SAPPHIRE - remove impurities from an exposed surface in the ultrahigh vacuum environment. A high qualify single crystalline or polycrystalline silicon carbide film can be grown directly on the sapphire substrate by chemical vapor deposition employing a silicon-containing reactant and a carbon-containing reactant. Formation of single crystalline silicon carbide has been verified by x-ray diffraction, secondary ion mass spectroscopy, and transmission electron microscopy. | 05-10-2012 |
20120181507 | SEMICONDUCTOR STRUCTURE AND CIRCUIT INCLUDING ORDERED ARRANGMENT OF GRAPHENE NANORIBBONS, AND METHODS OF FORMING SAME - A semiconductor structure including an ordered array of parallel graphene nanoribbons located on a surface of a semiconductor substrate is provided using a deterministically assembled parallel set of nanowires as an etch mask. The deterministically assembled parallel set of nanowires is formed across a gap present in a patterned graphene layer utilizing an electric field assisted assembly process. A semiconductor device, such as a field effect transistor, can be formed on the ordered array of parallel graphene nanoribbons. | 07-19-2012 |
20120205626 | SEMICONDUCTOR CHIP WITH GRAPHENE BASED DEVICES IN AN INTERCONNECT STRUCTURE OF THE CHIP - A semiconductor structure includes a first dielectric material including at least one first conductive region contained therein. The structure also includes at least one graphene containing semiconductor device located atop the first dielectric material. The at least one graphene containing semiconductor device includes a graphene layer that overlies and is in direct with the first conductive region. The structure further includes a second dielectric material covering the at least one graphene containing semiconductor device and portions of the first dielectric material. The second dielectric material includes at least one second conductive region contained therein, and the at least one second conductive region is in contact with a conductive element of the at least one graphene containing semiconductor device. | 08-16-2012 |
20120211723 | GRAPHENE-CONTAINING SEMICONDUCTOR STRUCTURES AND DEVICES ON A SILICON CARBIDE SUBSTRATE HAVING A DEFINED MISCUT ANGLE - A semiconductor structure having a high Hall mobility is provided that includes a SiC substrate having a miscut angle of 0.1° or less and a graphene layer located on an upper surface of the SiC substrate. Also, provided are semiconductor devices that include a SiC substrate having a miscut angle of 0.1° or less and at least one graphene-containing semiconductor device located atop the SiC substrate. The at least one graphene-containing semiconductor device includes a graphene layer overlying and in contact with an upper surface of the SiC substrate. | 08-23-2012 |
20120319078 | GRAPHENE GROWTH ON A NON-HEXAGONAL LATTICE - A graphene layer is formed on a crystallographic surface having a non-hexagonal symmetry. The crystallographic surface can be a surface of a single crystalline semiconductor carbide layer. The non-hexagonal symmetry surface of the single crystalline semiconductor carbide layer is annealed at an elevated temperature in ultra-high vacuum environment to form the graphene layer. During the anneal, the semiconductor atoms on the non-hexagonal surface of the single crystalline semiconductor carbide layer are evaporated selective to the carbon atoms. As the semiconductor atoms are selectively removed, the carbon concentration on the surface of the semiconductor-carbon alloy layer increases. Despite the non-hexagonal symmetry of the surface of the semiconductor-carbon alloy layer, the remaining carbon atoms can coalesce to form a graphene layer having hexagonal symmetry. | 12-20-2012 |
20130119350 | SEMICONDUCTOR STRUCTURE AND CIRCUIT INCLUDING ORDERED ARRANGEMENT OF GRAPHENE NANORIBBONS, AND METHODS OF FORMING SAME - A semiconductor structure including an ordered array of parallel graphene nanoribbons located on a surface of a semiconductor substrate is provided using a deterministically assembled parallel set of nanowires as an etch mask. The deterministically assembled parallel set of nanowires is formed across a gap present in a patterned graphene layer utilizing an electric field assisted assembly process. A semiconductor device, such as a field effect transistor, can be formed on the ordered array of parallel graphene nanoribbons. | 05-16-2013 |
20130203246 | SEMICONDUCTOR CHIP WITH GRAPHENE BASED DEVICES IN AN INTERCONNECT STRUCTURE OF THE CHIP - A semiconductor structure includes a first dielectric material including at least one first conductive region contained therein. The structure also includes at least one graphene containing semiconductor device located atop the first dielectric material. The at least one graphene containing semiconductor device includes a graphene layer that overlies and is in direct with the first conductive region. The structure further includes a second dielectric material covering the at least one graphene containing semiconductor device and portions of the first dielectric material. The second dielectric material includes at least one second conductive region contained therein, and the at least one second conductive region is in contact with a conductive element of the at least one graphene containing semiconductor device. | 08-08-2013 |
20130285014 | FORMATION OF A GRAPHENE LAYER ON A LARGE SUBSTRATE - A single crystalline silicon carbide layer can be grown on a single crystalline sapphire substrate. Subsequently, a graphene layer can be formed by conversion of a surface layer of the single crystalline silicon layer during an anneal at an elevated temperature in an ultrahigh vacuum environment. Alternately, a graphene layer can be deposited on an exposed surface of the single crystalline silicon carbide layer. A graphene layer can also be formed directly on a surface of a sapphire substrate or directly on a surface of a silicon carbide substrate. Still alternately, a graphene layer can be formed on a silicon carbide layer on a semiconductor substrate. The commercial availability of sapphire substrates and semiconductor substrates with a diameter of six inches or more allows formation of a graphene layer on a commercially scalable substrate for low cost manufacturing of devices employing a graphene layer. | 10-31-2013 |
20140374702 | CARBON NANOSTRUCTURE DEVICE FABRICATION UTILIZING PROTECT LAYERS - Hall effect devices and field effect transistors are formed incorporating a carbon-based nanostructure layer such as carbon nanotubes and/or graphene with a sacrificial metal layer formed there over to protect the carbon-based nanostructure layer during processing. | 12-25-2014 |
Patent application number | Description | Published |
20140264558 | FACETED INTRINSIC EPITAXIAL BUFFER LAYER FOR REDUCING SHORT CHANNEL EFFECTS WHILE MAXIMIZING CHANNEL STRESS LEVELS - A faceted intrinsic buffer semiconductor material is deposited on sidewalls of a source trench and a drain trench by selective epitaxy. A facet adjoins each edge at which an outer sidewall of a gate spacer adjoins a sidewall of the source trench or the drain trench. A doped semiconductor material is subsequently deposited to fill the source trench and the drain trench. The doped semiconductor material can be deposited such that the facets of the intrinsic buffer semiconductor material are extended and inner sidewalls of the deposited doped semiconductor material merges in each of the source trench and the drain trench. The doped semiconductor material can subsequently grow upward. Faceted intrinsic buffer semiconductor material portions allow greater outdiffusion of dopants near faceted corners while suppressing diffusion of dopants in regions of uniform width, thereby suppressing short channel effects. | 09-18-2014 |
20150084096 | FACETED INTRINSIC EPITAXIAL BUFFER LAYER FOR REDUCING SHORT CHANNEL EFFECTS WHILE MAXIMIZING CHANNEL STRESS LEVELS - A faceted intrinsic buffer semiconductor material is deposited on sidewalls of a source trench and a drain trench by selective epitaxy. A facet adjoins each edge at which an outer sidewall of a gate spacer adjoins a sidewall of the source trench or the drain trench. A doped semiconductor material is subsequently deposited to fill the source trench and the drain trench. The doped semiconductor material can be deposited such that the facets of the intrinsic buffer semiconductor material are extended and inner sidewalls of the deposited doped semiconductor material merges in each of the source trench and the drain trench. The doped semiconductor material can subsequently grow upward. Faceted intrinsic buffer semiconductor material portions allow greater outdiffusion of dopants near faceted corners while suppressing diffusion of dopants in regions of uniform width, thereby suppressing short channel effects. | 03-26-2015 |
20150236147 | GRAPHENE TRANSISTOR WITH A SUBLITHOGRAPHIC CHANNEL WIDTH - Silicon-carbon alloy structures can be formed as inverted U-shaped structures around semiconductor fins by a selective epitaxy process. A planarization dielectric layer is formed to fill gaps among the silicon-carbon alloy structures. After planarization, remaining vertical portions of the silicon-carbon alloy structures constitute silicon-carbon alloy fins, which can have sublithographic widths. The semiconductor fins may be replaced with replacement dielectric material fins. In one embodiment, employing a patterned mask layer, sidewalls of the silicon-carbon alloy fins can be removed around end portions of each silicon-carbon alloy fin. An anneal is performed to covert surface portions of the silicon-carbon alloy fins into graphene layers. In one embodiment, each graphene layer can include only a horizontal portion in a channel region, and include a horizontal portion and sidewall portions in source and drain regions. If a patterned mask layer is not employed, each graphene layer can include only a horizontal portion. | 08-20-2015 |
20150270332 | SINGLE-CRYSTAL SOURCE-DRAIN MERGED BY POLYCRYSTALLINE MATERIAL - A method of forming a semiconductor structure includes forming a first fin and a second fin on a substrate. A gate structure is formed over a first portion of the first fin and the second fin without covering a second portion of the first fin and the second fin. Single-crystal epitaxial layers are deposited surrounding the second portion of the first fin and the second fin such that the single-crystal epitaxial layer on the first fin does not contact the single-crystal epitaxial layer on the second fin. A polycrystalline layer is then deposited surrounding the single-crystal epitaxial layers, so that the polycrystalline layer contacts the single-crystal epitaxial layer on the first fin and the single-crystal epitaxial layer on the second fin. The single-crystal epitaxial layers and the polycrystalline layer form a merged source-drain region. | 09-24-2015 |