Patent application number | Description | Published |
20120023428 | ENVIRONMENTAL SENSOR TOUCHSCREEN INTERFACE FOR PUBLIC AREAS - A HVAC device is provided. The device includes at least one environmental sensor, a control processor that compares data from the at least one environmental sensor with a reference value, the processor providing an output indicating the environmental data exceeds the reference value a communication interface coupled to the processor, the communication interface transfers the output of the control processor to a remotely located control panel and an interactive display coupled to the processor, the display depicting environmental data from the at least one environmental sensor for a predetermined time period after activation of the interactive display by a user and a blank screen thereafter. | 01-26-2012 |
20130066565 | SYSTEMS AND METHODS OF CONFIGURING GAS DETECTION EQUIPMENT BASED ON A USER INTERVIEW - Systems and methods of configuring gas detection equipment based on a user interview are provided. Methods include presenting a plurality of questions to a user regarding the gas detection equipment, receiving user feedback responsive to each of the plurality of questions, and determining configuration parameters, in accordance with the user feedback, for bringing piece the gas detection equipment into a compliant state. | 03-14-2013 |
20140144204 | GAS DETECTION MANAGEMENT SYSTEM WITH REPLACEMENT MODULES - A calibration system is provided that supports a plurality of multi-gas detectors and that includes additional options for delivering additional test gases to the detectors. The system can include a calibration module for calibrating a multi-gas detector with a first gas and a replacement module capable of being coupled to the calibration module. When coupled to the calibration module, the replacement module can support delivering a plurality of test gases, not including the first test gas, to the calibration module. | 05-29-2014 |
Patent application number | Description | Published |
20100006893 | STRAINED LAYERS WITHIN SEMICONDUCTOR BUFFER STRUCTURES - A semiconductor workpiece including a substrate, a relaxed buffer layer including a graded portion formed on the substrate, and at least one strained transitional layer within the graded portion of the relaxed buffer layer and method of manufacturing the same. The at least one strained transitional layer reduces an amount of workpiece bow due to differential coefficient of thermal expansion (CTE) contraction of the relaxed buffer layer relative to CTE contraction of the substrate | 01-14-2010 |
20100264463 | SEMICONDUCTOR HETEROSTRUCTURE AND METHOD FOR FORMING SAME - The invention relates to a method for forming a semiconductor heterostructure by providing a substrate with a first in-plane lattice parameter a | 10-21-2010 |
20120015497 | Preparing a Surface of a Sapphire Substrate for Fabricating Heterostructures - A method of fabricating a heterostructure comprising at least a first substrate ( | 01-19-2012 |
20120100690 | METHOD FOR MANUFACTURING A HETEROSTRUCTURE AIMING AT REDUCING THE TENSILE STRESS CONDITION OF THE DONOR SUBSTRATE - A method for manufacturing a heterostructure for applications in the fields of electronics, photovoltaics, optics or optoelectronics, by implanting atomic species in a donor substrate so as to form an embrittlement area therein, assembling a receiver substrate on the donor substrate, wherein the receiver substrate has a larger thermal expansion coefficient than that of the donor substrate, detaching a rear portion of the donor substrate along the embrittlement area so as to transfer a thin layer of interest of the donor substrate onto the receiver substrate, and applying a detachment annealing after assembling and but before detaching, in order to facilitate the detaching. The detachment annealing includes the simultaneous application of a first temperature to the donor substrate and a second temperature different from the first to the receiver substrate; with the first and second temperatures being selected to reduce the tensile stress condition of the donor substrate. | 04-26-2012 |
20140327013 | METHOD FOR MANUFACTURING A THICK EPTAXIAL LAYER OF GALLIUM NITRIDE ON A SILICON OR SIMILAR SUBSTRATE AND LAYER OBTAINED USING SAID METHOD - The invention relates to a method for manufacturing, by means of epitaxy, a monocrystalline layer of GaN on a substrate, wherein the coefficient of thermal expansion is less than the coefficient of thermal expansion of GaN, comprising the following steps: (b) three-dimensional epitaxial growth of a layer of GaN relaxed at the epitaxial temperature, (c1) growth of an intermediate layer of B | 11-06-2014 |