Patent application number | Description | Published |
20090026496 | METHODS OF MAKING SUBSTITUTIONALLY CARBON-DOPED CRYSTALLINE SI-CONTAINING MATERIALS BY CHEMICAL VAPOR DEPOSITION - Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain 2.4 atomic % or greater substitutional carbon. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition. | 01-29-2009 |
20090111246 | INHIBITORS FOR SELECTIVE DEPOSITION OF SILICON CONTAINING FILMS - A method for depositing a single crystalline silicon film comprises: providing a substrate disposed within a chamber; introducing to the chamber under chemical vapor deposition conditions a silicon precursor, a chlorine-containing etchant and an inhibitor source for decelerating reactions between the silicon precursor and the chlorine-containing etchant; and selectively depositing a doped crystalline Si-containing film onto the substrate. | 04-30-2009 |
20090163001 | SEPARATE INJECTION OF REACTIVE SPECIES IN SELECTIVE FORMATION OF FILMS - Methods and apparatuses for selective epitaxial formation of films separately inject reactive species into a CVD chamber. The methods are particularly useful for selective deposition using volatile combinations of precursors and etchants. Formation processes include simultaneous supply of precursors and etchants for selective deposition, or sequential supply for cyclical blanket deposition and selective etching. In either case, precursors and etchants are provided along separate flow paths that intersect in the relatively open reaction space, rather than in more confined upstream locations. | 06-25-2009 |
20090189185 | EPITAXIAL GROWTH OF RELAXED SILICON GERMANIUM LAYERS - A relaxed silicon germanium structure comprises a silicon buffer layer produced using a chemical vapor deposition process with an operational pressure greater than approximately 1 torr. The relaxed silicon germanium structure further comprises a silicon germanium layer deposited over the silicon buffer layer. The silicon germanium layer has less than about 10 threading dislocations per square centimeter. By depositing the silicon buffer layer at a reduced deposition rate, the overlying silicon germanium layer can be provided with a “crosshatch free” surface. | 07-30-2009 |
20100093159 | SEPARATE INJECTION OF REACTIVE SPECIES IN SELECTIVE FORMATION OF FILMS - Methods and apparatuses for selective epitaxial formation of films separately inject reactive species into a CVD chamber. The methods are particularly useful for selective deposition using volatile combinations of precursors and etchants. Formation processes include simultaneous supply of precursors and etchants for selective deposition, or sequential supply for cyclical blanket deposition and selective etching. In either case, precursors and etchants are provided along separate flow paths that intersect in the relatively open reaction space, rather than in more confined upstream locations. | 04-15-2010 |
20100140744 | METHODS OF DEPOSITING ELECTRICALLY ACTIVE DOPED CRYSTALLINE SI-CONTAINING FILMS - Methods of making Si-containing films that contain relatively high levels of Group III or Group V dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain at least about 3×10 | 06-10-2010 |
20110117732 | CYCLICAL EPITAXIAL DEPOSITION AND ETCH - Methods for selectively depositing high quality epitaxial material include introducing pulses of a silicon-source containing vapor while maintaining a continuous etchant flow. Epitaxial material is deposited on areas of a substrate, such as source and drain recesses. Between pulses, the etchant flow continues such that lower quality epitaxial material may be removed, as well as any non-epitaxial material that may have been deposited. The pulse of silicon-source containing vapor may be repeated until a desired thickness of epitaxial material is selectively achieved in semiconductor windows, such as recessed source/drain regions. | 05-19-2011 |
20120244688 | SELECTIVE EPITAXIAL FORMATION OF SEMICONDUCTIVE FILMS - Epitaxial layers are selectively formed in semiconductor windows by a cyclical process of repeated blanket deposition and selective etching. The blanket deposition phases leave non-epitaxial material over insulating regions, such as field oxide, and the selective etch phases preferentially remove non-epitaxial material while deposited epitaxial material builds up cycle-by-cycle. Quality of the epitaxial material improves relative to selective processes where no deposition occurs on insulators. Use of a germanium catalyst during the etch phases of the process aid etch rates and facilitate economical maintenance of isothermal and/or isobaric conditions throughout the cycles. Throughput and quality are improved by use of trisilane, formation of amorphous material over the insulating regions and minimizing the thickness ratio of amorphous:epitaxial material in each deposition phase. | 09-27-2012 |
20130029496 | Methods and Apparatus for a Gas Panel with Constant Gas Flow - A gas panel according to various aspects of the present invention is configured to deliver a constant flow rate of gases to a reaction chamber during a deposition process step. In one embodiment, the gas panel comprises a deposition sub-panel having a deposition injection line, a deposition vent line, and at least one deposition process gas line. The deposition injection line supplies a mass flow rate of a carrier gas to a reactor chamber. Each deposition process gas line may include a pair of switching valves that are configured to selectively direct a deposition process gas to the reactor chamber or a vent line. The deposition vent line also includes a switching valve configured to selectively direct a second mass flow rate of the carrier gas that is equal to the sum of the mass flow rate for all of the deposition process gases to the reactor chamber or a vent line. The gas panel is configured to substitute the mass flow rate of the deposition vent line with the mass flow rate of the deposition process lines, such that when the deposition vent line is directed to the reactor chamber the deposition process lines are directed to the vent line and when the deposition vent line is directed to the vent line the deposition process lines are directed to the reactor chamber. The substitution of the two mass flow rates maintains a constant mass flow rate of gases to the reactor chamber throughout the deposition process step. | 01-31-2013 |
20140209177 | METHODS AND APPARATUS FOR A GAS PANEL WITH CONSTANT GAS FLOW - A gas panel according to various aspects of the present invention is configured to deliver a constant flow rate of gases to a reaction chamber during a deposition process step. In one embodiment, the gas panel comprises a deposition sub-panel having a deposition injection line, a deposition vent line, and at least one deposition process gas line. The deposition injection line supplies a mass flow rate of a carrier gas to a reactor chamber. Each deposition process gas line may include a pair of switching valves that are configured to selectively direct a deposition process gas to the reactor chamber or a vent line. The deposition vent line also includes a switching valve configured to selectively direct a second mass flow rate of the carrier gas that is equal to the sum of the mass flow rate for all of the deposition process gases to the reactor chamber or a vent line. The gas panel is configured to substitute the mass flow rate of the deposition vent line with the mass flow rate of the deposition process lines, such that when the deposition vent line is directed to the reactor chamber the deposition process lines are directed to the vent line and when the deposition vent line is directed to the vent line the deposition process lines are directed to the reactor chamber. The substitution of the two mass flow rates maintains a constant mass flow rate of gases to the reactor chamber throughout the deposition process step. | 07-31-2014 |
Patent application number | Description | Published |
20120186682 | FLUID ACTUATOR FOR PRODUCING A PULSED OUTLET FLOW IN THE FLOW AROUND AN AERODYNAMIC BODY, AND DISCHARGE DEVICE AND AERODYNAMIC BODY EQUIPPED THEREWITH - A fluid actuator for influencing the flow along a flow surface by ejecting a fluid flowing through the fluid actuator is described. The fluid actuator has at least two outlet lines with outlet openings at the respective ends thereof, and a feed line connected to the outlet lines for feeding fluid at a supply pressure, a flow direction diverting device into which the feed line opens and out of which the outlet lines open, and an adjusting device coupled to the flow direction diverting device to control the latter. The adjusting device is configured so the fluid is conducted successively in a cyclic sequence into each of the outlet lines. A discharge device for discharging a fluid out of a flow body, and a flow body having a multiplicity of discharge openings and a discharge device of said type are also described. | 07-26-2012 |
20130035808 | AIRCRAFT WITH A CONTROL DEVICE - An aircraft with aerofoils including a main wing and a control flap that includes an adjustment flap. The aircraft includes an actuator for the control flap, as well as a sensor device for acquiring the position of the control flap, an arrangement of flow-influencing devices for influencing the fluid that flows over a segment of the main wing, and flow-state sensor devices for measuring the flow state. The aircraft includes a flight control device connected to the sensor device for acquiring the position of the control flap and to the flow-state sensor devices, and connected to the actuator and flow-influencing devices for transmitting actuating commands, and a flight-state sensor device connected to the flight control device for transmitting flight states. The flight control device includes a function that selects the flow-influencing devices that are operated for optimising local lift coefficients on the aerofoil, depending on the flight state. | 02-07-2013 |
20130277502 | FLOW BODY HAVING A LEADING EDGE, A SURFACE AND AN ACTIVE FLOW CONTROL SYSTEM AND VEHICLE COMPRISING AT LEAST ONE SUCH FLOW BODY AND AN AIR SOURCE - A flow body having a surface, a leading edge has an active flow control system. The active flow control system includes a plurality of openings, at least one control pressure varying device and at least one fluidic actuator with an interaction chamber having an inlet connectable to an air source, at least two outlets and at least two control pressure ports. The openings are distributed along or parallel to the leading edge in a side-by-side relationship and extend through the surface. The control pressure varying device is connected to the at least two control pressure ports in a fluidic manner, wherein the control pressure varying device is adapted to bring about the flow of the fluid at least majoritarily into a respective one of the outlets. Each of the outlets is connected to one individual opening of the plurality of openings. | 10-24-2013 |
20130284294 | FLUID ACTUATOR FOR INFLUENCING THE FLOW ALONG A FLOW SURFACE, AS WELL AS BLOW-OUT DEVICE AND FLOW BODY COMPRISING A LIKE FLUID ACTUATOR - The invention relates to fluid actuator for influencing the flow along a flow surface through ejection of a fluid. By means of a like fluid actuator, a continuous flow is distributed to at least two outlet openings in order to generate fluid pulses out of these outlet openings. Control of this distribution takes place inside an interaction chamber which is supplied with fluid flow via a feed line. Into this interaction chamber there merge at least two control lines via control openings to which a respective different pressure may be applied. Depending on the pressure difference at the control openings, the flow in the interaction chamber is distributed to the individual outlet openings. | 10-31-2013 |