Patent application number | Description | Published |
20080232874 | Cleaning blade edge stiffener to improve blade tucking robustness - This is a cleaning blade useful in an electrophotographic marking system. Under certain conditions, cleaning blades will tuck when the blade continuously contacts a photoconductive surface of this marking system. This tucking causes abrading and damage to the moving photoconductive surface. To prevent or minimize tucking, a blade stiffener is used in this invention in either an add-on or as a part of the originally-manufactured elastomeric blade. | 09-25-2008 |
20080298858 | Automation mechanism for positioning transfer dicorotron cover or shutter - This is a structure useful in electrostatic marking systems that prevents a charge from contacting a photoreceptor in areas not covered by paper. An automatically movable cover is positioned between a corona device and the photoreceptor to prevent the charge emitted by the corona from damaging the unprotected areas of the photoreceptor. The movement and positioning of the shutter or cover is automatically calibrated by the width of paper being used. Since a plurality of paper widths can be used in an electrostatic marking system, various portions of the photoreceptor will be exposed. The entire determination to move the cover or shutter and to the extent positioned is automatically determined minimizing the possibility of error if manual positioning of the cover was used. | 12-04-2008 |
20080307638 | DICOROTRON WIRE ASSEMBLY REMOVAL AND STORAGE TOOL - A system and apparatus that removes and collects non-functional wire assemblies from dicorotron units is described. It has a removal tool with flexible levers mounted on the top of a storage box. The removal tool has an open top and bottom, the open bottom is aligned with an opening in the top of the box to permit a dislodged anchor and wire assembly to fall therethrough. | 12-18-2008 |
20090057103 | Belt installation guides - A belt installation guide is disclosed which accommodates the loading of a new belt around drive rollers in a belt module assembly. The guide is placed opposite the end portions of the rollers, the belt is slipped over the guides and held by the guides until the belt is pushed over the rollers. Once in place over the rollers, a tension is exerted on the belt to make it taut over all of the rollers. The guide is removed from near the rolls after the belt is in place over the rollers. The guide when not in use is positioned in housings internal to the rollers, or in housings adjacent to the rollers. The guides are enabled to be removed or pulled out from these housings when ready for use in installing a belt in a belt module. | 03-05-2009 |
20090062047 | Belt installation guides - A belt installation guide is disclosed which accommodates the loading in a belt module of a new belt around drive rollers. The guide is placed opposite the end portions of the rollers, the belt is slipped over the guides and held by the guides until the belt is pushed over the rollers. The guides can be attached to the belt module or can be detachable therefrom. Once in place over the rollers, a tension is exerted on the belt to make it taut over all of the rollers. The guide is removed from near the rollers after the belt is in place over the rollers. | 03-05-2009 |
20100054793 | CORONA DEVICE GRID CLEANER - This is a device for cleaning a corona grid used in electrostatic printing or copying machines. This device has a cleaner pad that cleans the outer surface of the grid, that is the surface closest to the photoreceptor surface. This pad is located between the outer surface of the grid and the surface of the photoreceptor. It can be used together with a cleaner pad that cleans the inner surface of the grid. | 03-04-2010 |
Patent application number | Description | Published |
20130307150 | COPPER INTERCONNECT STRUCTURE AND ITS FORMATION - A structure with improved electromigration resistance and methods for making the same. A structure having improved electromigration resistance includes a bulk interconnect having a dual layer cap and a dielectric capping layer. The dual layer cap includes a bottom metallic portion and a top metal oxide portion. Preferably the metal oxide portion is MnO or MnSiO and the metallic portion is Mn or CuMn. The structure is created by doping the interconnect with an impurity (Mn in the preferred embodiment), and then creating lattice defects at a top portion of the interconnect. The defects drive increased impurity migration to the top surface of the interconnect. When the dielectric capping layer is formed, a portion reacts with the segregated impurities, thus forming the dual layer cap on the interconnect. Lattice defects at the Cu surface can be created by plasma treatment, ion implantation, a compressive film, or other means. | 11-21-2013 |
20140210089 | COPPER INTERCONNECT STRUCTURE AND ITS FORMATION - A structure with improved electromigration resistance and methods for making the same. A structure having improved electromigration resistance includes a bulk interconnect having a dual layer cap and a dielectric capping layer. The dual layer cap includes a bottom metallic portion and a top metal oxide portion. Preferably the metal oxide portion is MnO or MnSiO and the metallic portion is Mn or CuMn. The structure is created by doping the interconnect with an impurity (Mn in the preferred embodiment), and then creating lattice defects at a top portion of the interconnect. The defects drive increased impurity migration to the top surface of the interconnect. When the dielectric capping layer is formed, a portion reacts with the segregated impurities, thus forming the dual layer cap on the interconnect. Lattice defects at the Cu surface can be created by plasma treatment, ion implantation, a compressive film, or other means. | 07-31-2014 |
Patent application number | Description | Published |
20090239062 | METHOD AND STRUCTURE OF INTEGRATED RHODIUM CONTACTS WITH COPPER INTERCONNECTS - The present disclosure relates to a microelectronic structure and the manufacture of the microelectronic structure. Specifically, the disclosure relates to an interconnect barrier layer between a rhodium contact structure and a copper interconnect structure in a microelectronic structure. The microelectronic structure provides for low resistance in microelectronic devices. | 09-24-2009 |
20100123205 | METHOD TO PREVENT SURFACE DECOMPOSITION OF III-V COMPOUND SEMICONDUCTORS - A method of preventing surface decomposition of a III-V compound semiconductor is provided. The method includes forming a silicon film having a thickness from 10 Å to 400 Å on a surface of an III-V compound semiconductor. After forming the silicon film onto the surface of the III-V compound semiconductor, a high performance semiconductor device including, for example, a MOSFET, can be formed on the capped/passivated III-V compound semiconductor. During the MOSFET fabrication, a high k dielectric can be formed on the capped/passivated III-V compound semiconductor and thereafter, activated source and drain regions can be formed into the III-V compound semiconductor. | 05-20-2010 |
20120086103 | TECHNIQUE TO CREATE A BURIED PLATE IN EMBEDDED DYNAMIC RANDOM ACCESS MEMORY DEVICE - A method for forming a trench structure is provided for a semiconductor and/or memory device, such as an DRAM device. In one embodiment, the method for forming a trench structure includes forming a trench in a semiconductor substrate, and exposing the sidewalls of the trench to an arsenic-containing gas to adsorb an arsenic containing layer on the sidewalls of the trench. A material layer is then deposited on the sidewalls of the trench to encapsulate the arsenic-containing layer between the material layer and sidewalls of the trench. | 04-12-2012 |
20120228736 | TECHNIQUE TO CREATE A BURIED PLATE IN EMBEDDED DYNAMIC RANDOM ACCESS MEMORY DEVICE - A method for forming a trench structure is provided for a semiconductor and/or memory device, such as an DRAM device. In one embodiment, the method for forming a trench structure includes forming a trench in a semiconductor substrate, and exposing the sidewalls of the trench to an arsenic-containing gas to adsorb an arsenic containing layer on the sidewalls of the trench. A material layer is then deposited on the sidewalls of the trench to encapsulate the arsenic-containing layer between the material layer and sidewalls of the trench. | 09-13-2012 |
20120305989 | METHOD TO PREVENT SURFACE DECOMPOSITION OF III-V COMPOUND SEMICONDUCTORS - A method of preventing surface decomposition of a III-V compound semiconductor is provided. The method includes forming a silicon film having a thickness from 10 Å to 400 Å on a surface of an III-V compound semiconductor. After forming the silicon film onto the surface of the III-V compound semiconductor, a high performance semiconductor device including, for example, a MOSFET, can be formed on the capped/passivated III-V compound semiconductor. During the MOSFET fabrication, a high k dielectric can be formed on the capped/passivated III-V compound semiconductor and thereafter, activated source and drain regions can be formed into the III-V compound semiconductor. | 12-06-2012 |
20120309153 | METHOD TO PREVENT SURFACE DECOMPOSITION OF III-V COMPOUND SEMICONDUCTORS - A method of preventing surface decomposition of a III-V compound semiconductor is provided. The method includes forming a silicon film having a thickness from 10 Å to 400 Å on a surface of an III-V compound semiconductor. After forming the silicon film onto the surface of the III-V compound semiconductor, a high performance semiconductor device including, for example, a MOSFET, can be formed on the capped/passivated III-V compound semiconductor. During the MOSFET fabrication, a high k dielectric can be formed on the capped/passivated III-V compound semiconductor and thereafter, activated source and drain regions can be formed into the III-V compound semiconductor. | 12-06-2012 |
Patent application number | Description | Published |
20090178298 | Device for fluid removal after laser scoring - An apparatus for drying a surface of a substrate during laser scoring. During the laser scoring process, a narrow cooling liquid jet follows the laser beam to create and propagate a partial vent. Precision of the scoring and overall stability of the process depend upon the accuracy of the alignment of the beam and the fluid stream. In one aspect, the apparatus has a conduit with at least one interior chamber in communication with at least one nozzle orifice. The conduit is configured to be in communication with a pressurized gas source to introduce the pressurized gas into the chamber. The pressurized gas forms a curtain of gas that is used to clean the cooling fluid therefrom the surface of the substrate. | 07-16-2009 |
20110267740 | PACKAGING FOR ELECTROCHEMICALLY ACTIVE MATERIALS, DEVICES MADE THEREFROM, AND METHODS OF MAKING THE SAME - The disclosure relates to packaging for electrochemically active materials comprising a housing comprising at least one active coating, devices made therefrom, and methods of making the same. | 11-03-2011 |
20140075994 | PULL ROLL APPARATUS AND METHOD FOR CONTROLLING GLASS SHEET TENSION - A pull roll apparatus and method are described herein that can control a cross-draw tension and a down-draw tension of a glass sheet while manufacturing the glass sheet. In one embodiment, the pull roll apparatus includes a first driven stub roll pair, a second driven stub roll pair and a control device (e.g., PLC) that controls the first and second driven stub roll pairs while a first edge portion of the glass sheet is drawn between two vertically downtilted rolls associated with the first driven stub roll pair and while an opposing second edge portion of the glass sheet is drawn between two vertically downtilted rolls associated with the second driven stub roll pair. If desired, the pull roll apparatus may include a pulling roll assembly (located below the first and second driven stub rolls) or another set of driven stub roll pairs (located below the first and second driven stub roll pairs). | 03-20-2014 |
Patent application number | Description | Published |
20120307948 | METHOD TO CANCEL IMPULSIVE INTERFERENCE FROM A SIGNAL PROCESSING SYSTEM - A method of canceling impulsive interference from a communications signal is provided. The method includes identifying an impulse interference contained in the communications signal, generating a model of impulse interference, matching the model in at least one of amplitude, phase and envelope time delay to the identified impulse interference, and cancelling the identified impulse interference by subtracting the matched model from the identified impulse interference. | 12-06-2012 |
20120321024 | METHOD AND SYSTEM TO ADAPTIVELY CANCEL SINUSOIDAL INTERFERENCE FROM A SIGNAL PROCESSING SYSTEM - A method of canceling sinusoidal interference from a received signal includes identifying a block of signal-free data containing sinusoidal interference. A model of the significant interference in the selected data block is constructed, scaled to subsequent data blocks and used to remove sinusoidal interference signals from the overall received signal. | 12-20-2012 |
20120322385 | MULTI-ELEMENT MAGNETIC RECEIVER FOR INTERFERENCE SUPPRESSION AND SIGNAL ENHANCEMENT - A system and method for enhancing a magnetic communication signal is provided. A multi-element receiver is used to generate a plurality of input signals. A set of weights is generated using, for example, a calculated covariance of the plurality of input signals, and applied to the signals. The weights are used to generate a single output signal representing a weighted sum of the input signals. | 12-20-2012 |
20140369388 | SYSTEM, METHOD AND APPARATUS FOR COMMUNICATION THAT IS INSENSITIVE TO A SAMPLING CLOCK ERROR - A system, method and apparatus for digital communication that is insensitive to a sampling clock error. In one embodiment, a digital communication system that is insensitive to a sampling clock error is provided. The digital communication system includes a transmitting communication unit and a receiving communication unit. The transmitting communication unit is configured to generate a digital data communication signal and includes a modulator configured to modulate digital data such that the modulated digital data communication signal is invariant to a stretched frequency scale resulting from a lack of synchronization with a receiving communication unit. The receiving communication unit is configured to receive the digital data communication signal and includes a demodulator configured to demodulate the digital data. | 12-18-2014 |