Patent application number | Description | Published |
20110231112 | System and Method for Damage Diagnosis - The object of the invention is to provide a damage diagnostic system that uses a damage detection system that obtains propagation intensity distribution data, which is expanded in the two dimensions frequency and propagation time, by converting the output value from an oscillation detection sensor that was obtained when oscillation is performed by an oscillator, and for one mode or two or more modes that are selected from the fundamental mode and higher mode of Lamb waves, obtains certain characteristic values from the data, for example three indices, which are the slope of the mode dispersion of the A1 mode (rate of change of the propagation time with respect to the frequency), the amount of decrease in the propagation time of the A1 mode, and the amount of increase in the propagation time of the S0 and S1 modes, and outputs the measurement results. The measurement results are displayed on a display device. | 09-22-2011 |
20140218751 | DISPLACEMENT MEASURING DEVICE AND DISPLACEMENT MEASURING METHOD - Displacement measuring device with light irradiation system, first and second FBGs and detecting system. The first FBG has first transmittance distribution or first reflectance distribution. The second FBG has second transmittance distribution or second reflectance distribution. The detecting system detects light passed through the first and second FBGs of which at least one of the first transmittance distribution and the second transmittance distribution changes in a wavelength direction with a change amount different from that of the other, according to a displacement amount of an object, or amplitude of the light passed through the first and the second FBGs of which at least one of the first reflectance distribution and the second reflectance distribution changes in the wavelength direction with a change amount different from that of the other, according to the displacement amount of the object, and acquires an index to indicate the displacement amount based on the amplitude. | 08-07-2014 |
20140330528 | System and Method for Damage Diagnosis - The object of the invention is to provide a damage diagnostic system that uses a damage detection system that obtains propagation intensity distribution data, which is expanded in the two dimensions frequency and propagation time, by converting the output value from an oscillation detection sensor that was obtained when oscillation is performed by an oscillator, and for one mode or two or more modes that are selected from the fundamental mode and higher mode of Lamb waves, obtains certain characteristic values from the data, for example three indices, which are the slope of the mode dispersion of the A1 mode (rate of change of the propagation time with respect to the frequency), the amount of decrease in the propagation time of the A1 mode, and the amount of increase in the propagation time of the S0 and S1 modes, and outputs the measurement results. The measurement results are displayed on a display device. | 11-06-2014 |
20150247826 | VIBRATION DETECTION APPARATUS AND VIBRATION DETECTION METHOD - A vibration detection apparatus includes a ring laser resonator, a fiber Brag grating and a detection system. The ring laser resonator generates a laser beam propagating a ring shaped optical path. The fiber Bragg grating is disposed in the ring laser resonator such that the laser beam enters the grating, and has a transmittance distribution characteristic of transmitted light in a wavelength direction, which changes in accordance with vibration of an object. The detection system detects the vibration based on the transmitted light through the fiber Bragg grating. | 09-03-2015 |
Patent application number | Description | Published |
20120027898 | METHOD AND APPARATUS FOR CONTROLLING MICROORGANISMS IN FOOD MATERIALS BY VACUUM AND RESONANT ULTRASONICATION - An object of the present invention is to provide a method for controlling microorganisms in food materials, by which bacterial groups that cause deterioration of the quality of food materials such as poultry and pathogenic microorganisms that cause food poisoning can be efficiently controlled. Specifically, the present invention relates to a method for controlling microorganisms in food materials, comprising a step of subjecting a food material immersed in a sterilizing solution to repeated treatment with negative pressure and ordinary pressure and/or a step of subjecting the food material immersed in the sterilizing solution to resonant ultrasonication. | 02-02-2012 |
20130104724 | MUSIC PLAYING MOVEMENT DISPLAY DEVICE, METHOD AND RECORDING MEDIUM | 05-02-2013 |
20130199357 | MUSIC PLAYING MOVEMENT DISPLAY CONTROL DEVICE, MUSIC PLAYING MOVEMENT CONTROL METHOD AND COMPUTER READABLE MEDIUM - A music playing movement display control device | 08-08-2013 |
20140283668 | MUSICAL SCORE PERFORMING APPARATUS, A METHOD OF PERFORMING A MUSICAL SCORE, AND A PROGRAM RECORDING MEDIUM - A musical-score performing apparatus is provided. In the apparatus, a musical-score displaying unit with a displaying screen displays a musical score of music on the displaying screen, the musical score being represented by a form of multiple staffs, and a designating unit is used to designate a position on the displaying screen of the musical-score displaying unit. A play-back controlling unit plays back the music represented by apart or the whole of the multiple staffs of the musical score in accordance with the position designated on the displaying screen. | 09-25-2014 |
20150082974 | MUSIC SCORE DISPLAY DEVICE, MUSIC SCORE DISPLAY METHOD, AND PROGRAM STORAGE MEDIUM - The CPU in a music score display device includes: a source region setting unit that sets a source region based on a desired portion designated in a music score displayed on a screen, the source region of the music score being an object to be enlarged and displayed; a display destination region setting unit that sets a display destination region of the screen, the display destination region corresponding to the source region; and a display control unit that extracts the music score in the source region, and enlarges and displays the extracted music score in the display destination region on the screen. | 03-26-2015 |
Patent application number | Description | Published |
20100308819 | MAGNETIC RESONANCE IMAGING APPARATUS AND MAGNETIC RESONANCE IMAGING METHOD - According to one embodiment, a magnetic resonance imaging apparatus includes an acquiring unit and a generating unit. The acquiring unit performs compensation of a control waveform of a radio-frequency wave based on “an output waveform of a radio-frequency wave from an amplifier before the compensation” so that an intended output waveform of a radio-frequency wave for generating a spatially non-selective radio-frequency magnetic field is outputted from the amplifier, and acquires a magnetic resonance signal using the control waveform of a radio-frequency wave after the compensation. The generating unit generates image data based on the magnetic resonance signal. | 12-09-2010 |
20140070809 | MAGNETIC RESONANCE IMAGING APPARATUS AND A POWER CONTROL METHOD OF A MAGNETIC RESONANCE IMAGING APPARATUS - In one embodiment, an MRI apparatus ( | 03-13-2014 |
20140070812 | IMAGE DIAGNOSIS APPARATUS AND POWER CONTROL METHOD OF AN IMAGE DIAGNOSIS APPARATUS - In one embodiment, the image diagnosis apparatus ( | 03-13-2014 |
20140132266 | MAGNETIC RESONANCE IMAGING APPARATUS AND TRANSMISSION CONTROL METHOD - According to one embodiment, a magnetic resonance imaging apparatus provided with a plurality of transmission channels includes a signal processing unit and a control unit. The signal processing unit acquires a radio frequency magnetic field emitted from each of the plurality of transmission channels through a receiver coil mounted on an object and measure a phase of the radio frequency magnetic field. The control unit determines a phase difference between the plurality of transmission channels based on the phase of the radio frequency magnetic field of each of the plurality of transmission channels measured by the signal processing unit. The control unit controls a phase of a radio frequency pulse inputted to each of the plurality of transmission channels, based on the phase difference. | 05-15-2014 |
20140232407 | MAGNETIC RESONANCE IMAGING APPARATUS AND APPARATUS FOR MEASURING RADIO FREQUENCY OUTPUT FOR THE SAME - An apparatus for measuring radio frequency output for a magnetic resonance imaging apparatus includes a plurality of directional couplers, a comparator, a switcher and a converter. The plurality of directional couplers are different in degree of coupling from each other, and attenuate an RF signal which is generated in an RF signal generator and amplified in an RF power amplifier. The comparator compares input-level information of a signal inputted into the RF power amplifier with a threshold value. The switcher switches to any one of the plurality of the directional couplers based on a result of the comparison so as to output an RF signal by the one directional coupler. The converter performs a digital conversion of the RF signal from the one directional coupler so as to output a digital signal. | 08-21-2014 |
20140300362 | MAGNETIC RESONANCE IMAGING DEVICE - A magnetic resonance imaging device according to an embodiment includes a gradient amplifier, a battery, a detector, and a battery controller. The gradient amplifier supplies electric power to the gradient coil. The battery is charged with electric power that is supplied from the power supply. The detector detects a high power output request on the gradient amplifier. The battery controller controls to supply electric power charged in the battery in addition to electric power supplied from the power supply to the gradient amplifier when the high power output request is detected. | 10-09-2014 |
20150015256 | MAGNETIC RESONANCE IMAGING APPARATUS AND MAGNETIC RESONANCE IMAGING METHOD - According to one embodiment, an MRI apparatus includes a data acquisition unit and an image generation unit. The data acquisition unit acquires an analog MR signal from an object and converts the analog MR signal into a digital MR signal. The image generation unit generates MR image data based on the digital MR signal. The data acquisition unit includes an AD converter, a signal processing part and a noise suppression part. The AD converter converts the analog MR signal, before a down conversion, into the digital MR signal, inside an imaging room. The signal processing part performs signal processing of the digital MR signal, inside the imaging room or outside the imaging room. The noise suppression part suppresses a noise arising caused by a conversion from the analog MR signal, before the down conversion, into the digital MR signal. | 01-15-2015 |
Patent application number | Description | Published |
20120039863 | RECOMBINANT FACTOR X WITH NO GLYCOSYLATION AND METHOD FOR PREPARING THE SAME - A Factor X (hereinafter referred to as “FX”) with a high activity is provided. The present invention relates to a method for efficiently preparing a recombinant, two-chain FX which comprises intervening glycosylation at such an amino acid sequence that is essential for glycosylation in FX to thereby allow for expression of a recombinant FX with no glycosylation, and the recombinant FX with no glycosylation obtained by said method. | 02-16-2012 |
20120231523 | RECOMBINANT FACTOR X WITH NO GLYCOSYLATION AND METHOD FOR PREPARING THE SAME - A Factor X (hereinafter referred to as “FX”) with a high activity is provided. The present invention relates to a method for efficiently preparing a recombinant, two-chain FX which comprises intervening glycosylation at such an amino acid sequence that is essential for glycosylation in FX to thereby allow for expression of a recombinant FX with no glycosylation, and the recombinant FX with no glycosylation obtained by said method. | 09-13-2012 |
20140193881 | NOVEL ADAMTS-13 MUTANT - An enhanced disintegrin-like domain, and metalloprotease, with an isolated human thrombospondin type 1 motif, member 13 (ADAMTS-13) that includes substitutions at one or more positions in the isolated human ADAMTS-13. | 07-10-2014 |
20150050716 | NOVEL ADAMTS-13 MUTANT - An enhanced disintegrin-like domain, and metalloprotease, with an isolated human thrombospondin type 1 motif, member 13 (ADAMTS-13) that includes substitutions at one or more positions in the isolated human ADAMTS-13. | 02-19-2015 |
Patent application number | Description | Published |
20110314158 | SYSTEM, METHOD, AND PROGRAM FOR APPLICATION ALLOCATION - An application allocation system is provided, by which a supposed execution environment can be obtained when an application is actually executed even in a case where the computer resources of the allocation destination dynamically varies. The allocation originating server obtains an execution condition of each component as application information, determines a component group having possibility to be allocated as an allocation candidate component group, generates a resource subscription request indicating an execution condition of the allocation candidate component group and transmits it to each allocation candidate server, and determines the allocation destination server of each component from the allocation candidate component group. Each allocation candidate server determines the executability of each allocation candidate component and transmits an application attendance request which indicates an executable allocation candidate component as an attendance object component to the allocation originating server. | 12-22-2011 |
20130055216 | APPLICATION MODIFICATION PORTION SEARCHING DEVICE AND APPLICATION MODIFICATION PORTION SEARCHING METHOD - There are provided: a test executing section which generates a plurality of logs when executing a coverage test for an application based on an inputted parameter; and a result processing section which generates a point candidate report based on the plurality of logs. The plurality of logs respectively indicate a call stack of a method designating the parameter as an argument among a plurality of methods called during execution of the coverage test. The call stack indicates a location on the application, in which a call of the method is defined. The point candidate report indicates a candidate for a point in the application, for which a modification is necessary when a dispatch of process is executed based on the parameter. | 02-28-2013 |
20130111498 | PROGRAM PROCESSING METHOD, PROGRAM PROCESSING APPARATUS, AND COMPUTER PROGRAM | 05-02-2013 |
20130167141 | APPLICATION CONFIGURATION SYSTEM, METHOD, AND PROGRAM - An application configuration system comprises a second application execution means which includes, an execution means which, after a copy reception control means which makes a storage means store a shared tenant data and unique tenant information copied from a first application execution means to said second application execution means obtains a copy of said shared tenant data from said first application execution means, executes processing according to request information which is inputted from a terminal and is transferred from a request control means to said second application execution means; and a data obtaining means which, when said execution means refers said unique tenant information, in case copying of said unique tenant information to said second application execution means is completed, obtains copied said unique tenant information, and in case said copying is not completed, obtains said unique tenant information of said first application execution means and outputs to said execution means. | 06-27-2013 |
20150033204 | SYSTEM-CONSTRUCTION-PROCEDURE GENERATING DEVICE, SYSTEM-CONSTRUCTION-PROCEDURE GENERATING METHOD, AND PROGRAM THEREOF - A construction procedure of a system which is constructed by performing operations of plural types with respect to each of plural program modules is generated. A system-construction-procedure generating device ( | 01-29-2015 |
20150277940 | PROGRAM SETTING DEVICE AND PROGRAM SETTING METHOD - A program setting device to allow setting items of a program to be flexibly defined in accordance with a level of skill of a user is provided. | 10-01-2015 |
Patent application number | Description | Published |
20120167674 | TIRE TESTER - Disclosed is a tire tester ( | 07-05-2012 |
20130031968 | ROAD SURFACE MEMBER FOR TIRE TESTING MACHINE AND MANUFACTURING METHOD OF THE SAME - A rotary drum used in a tire testing machine has a road surface base material made of an aluminum alloy and provided with a road surface onto which a tire is pushed. The road surface is coated with a thermally-sprayed steel film having higher hardness than the road surface base material, and polished. With such a configuration, a favorable test result can be obtained. | 02-07-2013 |
20140250996 | TIRE TESTING MACHINE - A tire testing machine of the present invention includes a bottom chuck that is mounted to a bottom frame, a top chuck that is mounted to a movable beam, a ball screw that causes the movable beam to ascend or descend, and a beam fixing member that fixes the movable beam so as not to ascend. The beam fixing member includes a disk that is fixed to the ball screw and is provided with a plurality of elongated holes and air cylinders that are fixed to the vertical frame and are inserted into the elongated holes. When the pins are inserted into the elongated holes formed in the disk, the top chuck is fixed to the bottom chuck through the movable beam so as not to ascend. | 09-11-2014 |
20140251757 | TIRE CONVEYOR FOR A TIRE TESTING MACHINE - In order to stably transfer a tire between a roller portion and a conveyor for a tire testing machine, the tire conveyor of the present invention includes: a roller portion that is provided at a position without a conveying surface of the conveyor in the width direction perpendicular to the conveying direction of the conveyor in the conveying surface of the conveyor so as to be parallel to the conveying surface of the conveyor and is provided with a plurality of placement rollers forming a placement surface on which the tire is rotatably placed; and an elevation mechanism that includes an actuator and a link mechanism connecting the roller portion or the conveyor to the actuator in a supported state and moves the placement surface of the roller portion upward and downward relative to the conveying surface of the conveyor or moves the conveying surface of the conveyor upward and downward relative to the placement surface of the roller portion by the driving of the actuator. | 09-11-2014 |
20140332348 | TIRE TESTING MACHINE CONVEYOR - A plurality of conveyors including a center conveyor are appropriately disposed without any gap or step and any interference between driving units. The center conveyor includes a pair of left and right belt driving pulleys that are provided at the front and rear sides in the conveying direction so as to stretch loop-shaped conveyor belts therebetween and are provided at both sides in the width direction, a pair of first left and right pulleys that is connected to each other through a connection shaft disposed on rotation axes of the belt driving pulleys at both outer sides in the width direction, a pair of left and right second pulleys that is provided below the first pulleys at both outer sides in the width direction so as to stretch loop-shaped pulley belts between the first and second pulleys and includes a common rotation axis, a driving shaft that is disposed on rotation axes of the second pulleys and is connected to the pair of second left and right pulleys, and a motor that is connected to an end of the driving shaft. | 11-13-2014 |
20150122004 | CALIBRATING APPARATUS OF TIRE TESTING MACHINE AND CALIBRATING METHOD OF TIRE TESTING MACHINE - A calibrating apparatus of a tire testing machine of the present invention calibrates force components along a lateral direction of a load cell on a tire testing machine provided with a rotary drum and the load cell mounted to a shaft portion of the rotary drum and capable of measuring force applied to the rotary drum, and has a hook member hooked on an outer peripheral edge of the rotary drum, a linear body, one end side of which is connected to the hook member, a load applying member connected to the other end side of the linear body and capable of generating a reference load toward a downward direction, and a pulley device around which the linear body is wound to convert the downward force by the load applying member into an upward force on one end side of the linear body. | 05-07-2015 |
20150209816 | TIRE LUBRICATOR DEVICE - This lubricator device includes an upper roller brush unit that comes into contact with a bead section on the upper side of a tire rotated about a vertical axis and applies a lubrication liquid, a lower roller brush unit that comes into contact with a bead section on the lower side of the tire and applies the lubrication liquid, a lubricator body, and a brush movement unit that connects the upper roller brush units to the lubricator body, and moves the upper roller brush unit and the lower roller brush unit in contact with and away from the tire. The brush movement unit includes a link mechanism that brings the upper roller brush unit close to the tire while moving the upper roller brush unit downward and brings the lower roller brush unit close to the tire while moving the lower roller brush unit upward. | 07-30-2015 |
Patent application number | Description | Published |
20110203513 | METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE - In a method of manufacturing a silicon carbide substrate, a defect-containing substrate made of silicon carbide is prepared. The defect-containing substrate has a front surface, a rear surface being opposite to the front surface, and a surface portion adjacent to the front surface. The detect-containing substrate includes a screw dislocation in the surface portion. The front surface of the defect-containing substrate is applied with an external force so that a crystallinity of the surface portion is reduced. After being applied with the external force, the defect-containing substrate is thermally treated so that the crystallinity of the surface portion is recovered. | 08-25-2011 |
20110291110 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The silicon carbide semiconductor device includes a substrate, a drift layer, a base region, a source region, a trench, a gate insulating layer, a gate electrode, a source electrode, a drain electrode, and a deep layer. The deep layer is disposed under the base region and is located to a depth deeper than the trench. The deep layer is divided into a plurality of portions in a direction that crosses a longitudinal direction of the trench. The portions include a group of portions disposed at positions corresponding to the trench and arranged at equal intervals in the longitudinal direction of the trench. The group of portions surrounds corners of a bottom of the trench. | 12-01-2011 |
20110309464 | SEMICONDUCTOR DEVICE INCLUDING CELL REGION AND PERIPHERAL REGION HAVING HIGH BREAKDOWN VOLTAGE STRUCTURE - A semiconductor device includes a semiconductor substrate and an electric field terminal part. The semiconductor substrate includes a substrate, a drift layer disposed on a surface of the substrate, and a base layer disposed on a surface of the drift layer. The semiconductor substrate is divided into a cell region in which a semiconductor element is disposed and a peripheral region that surrounds the cell region. The base region has a bottom face located on a same plane throughout the cell region and the peripheral region and provides an electric field relaxing layer located in the peripheral region. The electric field terminal part surrounds the cell region and a portion of the electric field relaxing layer and penetrates the electric field relaxing layer from a surface of the electric field relaxing layer to the drift layer. | 12-22-2011 |
20120061682 | SIC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A SiC semiconductor device includes: a substrate, a drift layer, and a base region stacked in this order; first and second source regions and a contact layer in the base region; a trench penetrating the source and base regions; a gate electrode in the trench; an interlayer insulation film with a contact hole covering the gate electrode; a source electrode coupling with the source region and the contact layer via the contact hole; a drain electrode on the substrate; and a metal silicide film. The high concentration second source region is shallower than the low concentration first source region, and has a part covered with the interlayer insulation film, which includes a low concentration first portion near a surface and a high concentration second portion deeper than the first portion. The metal silicide film on the second part has a thickness larger than the first portion. | 03-15-2012 |
20120142173 | MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL - A manufacturing method of an SiC single crystal includes preparing an SiC substrate, implanting ions into a surface portion of the SiC substrate to form an ion implantation layer, activating the ions implanted into the surface portion of the SiC substrate by annealing, chemically etching the surface portion of the SiC substrate to form an etch pit that is caused by a threading screw dislocation included in the SiC substrate and performing an epitaxial growth of SiC to form an SiC growth layer on a surface of the SiC substrate including an inner wall of the etch pit in such a manner that portions of the SiC growth layer grown on the inner wall of the etch pit join with each other. | 06-07-2012 |
20120161154 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - An SiC semiconductor device includes a substrate, a drift layer, a base region, a source region, a trench, a gate oxide film, a gate electrode, a source electrode and a drain electrode. The substrate has a Si-face as a main surface. The source region has the Si-face. The trench is provided from a surface of the source region to a portion deeper than the base region and extends longitudinally in one direction and has a Si-face bottom. The trench has an inverse tapered shape, which has a smaller width at an entrance portion than at a bottom, at least at a portion that is in contact with the base region. | 06-28-2012 |
20120181551 | SILICON CARBIDE SEMICONDUCTOR DEVICE - A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate and a trench. The silicon carbide semiconductor substrate has an offset angle with respect to a ( | 07-19-2012 |
20120273801 | SILICON CARBIDE SEMICONDUCTOR DEVICE - A SiC semiconductor device includes: a SiC substrate including a first or second conductive type layer and a first conductive type drift layer and including a principal surface having an offset direction; a trench disposed on the drift layer and having a longitudinal direction; and a gate electrode disposed in the trench via a gate insulation film. A sidewall of the trench provides a channel formation surface. The vertical semiconductor device flows current along with the channel formation surface of the trench according to a gate voltage applied to the gate electrode. The offset direction of the SiC substrate is perpendicular to the longitudinal direction of the trench. | 11-01-2012 |
20120319136 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A SiC device includes an inversion type MOSFET having: a substrate, a drift layer, and a base region stacked in this order; source and contact regions in upper portions of the base region; a trench penetrating the source and base regions; a gate electrode on a gate insulating film in the trench; a source electrode coupled with the source and base region; a drain electrode on a back of the substrate; and multiple deep layers in an upper portion of the drift layer deeper than the trench. Each deep layer has an impurity concentration distribution in a depth direction, and an inversion layer is provided in a portion of the deep layer on the side of the trench under application of the gate voltage. | 12-20-2012 |
20130001592 | SILICON CARBIDE SEMICONDUCTOR DEVICE - In a silicon carbide semiconductor device, a plurality of trenches has a longitudinal direction in one direction and is arranged in a stripe pattern. Each of the trenches has first and second sidewalls extending in the longitudinal direction. The first sidewall is at a first acute angle to one of a (11-20) plane and a (1-100) plane, the second sidewall is at a second acute angle to the one of the (11-20) plane and the (1-100) plane, and the first acute angle is smaller than the second acute angle. A first conductivity type region is in contact with only the first sidewall in the first and second sidewalls of each of the trenches, and a current path is formed on only the first sidewall in the first and second sidewalls. | 01-03-2013 |
20140175459 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A SiC semiconductor device includes: a semiconductor switching element having: a substrate, a drift layer and a base region stacked in this order; a source region and a contact region in the base region; a trench extending from a surface of the source region to penetrate the base region; a gate electrode on a gate insulating film in the trench; a source electrode electrically coupled with the source region and the base region; a drain electrode on a back side of the substrate; and multiple deep layers in an upper portion of the drift layer deeper than the trench. Each deep layer has upper and lower portions. A width of the upper portion is smaller than the lower portion. | 06-26-2014 |
20150048382 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - In a silicon carbide semiconductor device, a p-type SiC layer is disposed in a corner of a bottom of a trench. Thus, even if an electric field is applied between a drain and a gate when a MOSFET is turned off, a depletion layer in a pn junction between the p-type SiC layer and an n | 02-19-2015 |
20150115286 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - An SiC semiconductor device has a p type region including a low concentration region and a high concentration region filled in a trench formed in a cell region. A p type column is provided by the low concentration region, and a p | 04-30-2015 |
20150129895 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - In a method for producing an SiC semiconductor device, a p type layer is formed in a trench by epitaxially growing, and is then left only on a bottom portion and ends of the trench by hydrogen etching, thereby to form a p type SiC layer. Thus, the p type SiC layer can be formed without depending on diagonal ion implantation. Since it is not necessary to separately perform the diagonal ion implantation, it is less likely that a production process will be complicated due to transferring into an ion implantation apparatus, and thus manufacturing costs reduce. Since there is no damage due to a defect caused by the ion implantation, it is possible to reduce a drain leakage and to reliably restrict the p type SiC layer from remaining on the side surface of the trench. | 05-14-2015 |
20150236127 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a method of manufacturing a silicon carbide semiconductor device including a vertical switching element having a trench gate structure, with the use of a substrate having an off angle with respect to a (0001) plane or a (000-1) plane, a trench is formed from a surface of a source region to a depth reaching a drift layer through a base region so that a side wall surface of the trench faces a (11-20) plane or a (1-100) plane, and a gate oxide film is formed without performing sacrificial oxidation after formation of the trench. | 08-20-2015 |
Patent application number | Description | Published |
20100295098 | III-V HEMT DEVICES - A semiconductor device has a stacked structure in which a p-GaN layer, an SI-GaN layer, and an AlGaN layer are stacked, and has a gate electrode that is formed at a top surface side of the AlGaN layer. A band gap of the AlGaN layer is wider than a band gap of the p-GaN layer and the SI-GaN layer. Moreover, impurity concentration of the SI-GaN layer is less than 1×10 | 11-25-2010 |
20110207321 | SEMICONDUCTOR DEVICE MANUFACTURIING METHOD - A method for manufacturing a semiconductor device including a semiconductor substrate composed of silicon carbide, an upper surface electrode which contacts an upper surface of the substrate, and a lower surface electrode which contacts a lower surface of the substrate, the method including steps of: (a) forming an upper surface structure on the upper surface side of the substrate, and (b) forming a lower surface structure on the lower surface side of the substrate. The step (a) comprises steps of: (a1) depositing an upper surface electrode material layer on the upper surface of the substrate, the upper surface electrode material layer being a raw material layer of the upper surface electrode, and (a2) annealing the upper surface electrode material layer. The step (b) comprises steps of: (b1) depositing a lower surface electrode material layer on the lower surface of the substrate, the lower surface electrode material layer being a raw material layer of the lower surface electrode, and (b2) annealing the lower surface electrode material layer with a laser to make an ohmic contact between the lower surface electrode and the substrate. | 08-25-2011 |
20110316049 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a vertical nitride semiconductor device in which occurrence of leak currents can be suppressed, and a method for manufacturing such nitride semiconductor device. A nitride semiconductor device, which is a vertical HEMT, is provided with an n | 12-29-2011 |
20130105889 | SWITCHING DEVICE AND METHOD FOR MANUFACTURING THE SAME | 05-02-2013 |
20130146969 | SWITCHING ELEMENT AND MANUFACTURING METHOD THEREOF - A switching element is provided having a semiconductor substrate. A trench gate electrode is formed in the upper surface of the semiconductor substrate. An n-type first semiconductor region, a p-type second semiconductor region, and an n-type third semiconductor region are formed in a region in contact with a gate insulating film in the semiconductor substrate. At a position below the second semiconductor region, there is formed a p-type fourth semiconductor region connected to the second semiconductor region and opposing the gate insulating film via the third semiconductor region and containing boron. A high-concentration-carbon containing region having a carbon concentration higher than that of a semiconductor region exposed on the lower surface of the semiconductor substrate is formed in at least a part of the portion of the third semiconductor region, positioned between the fourth semiconductor region and the gate insulating film, that is in contact with the fourth semiconductor region. | 06-13-2013 |
20140097490 | SEMICONDUCTOR DEVICE - A semiconductor substrate of a semiconductor device includes a body region of a first conductivity type, a drift region of a second conductivity type coming into contact with a lower surface of the body region, a gate electrode that is provided in a gate trench passing through the body region and extending to the drift region and faces the body region, and a gate insulator that is provided between the gate electrode and a wall surface of the gate trench. An inverted U-shaped section is formed in a lower surface of the gate insulator, and a floating region of the first conductivity type is formed in the inverted U-shaped section. The floating region protrudes under a portion that is located at a lowermost portion in the lower surface of the gate insulator. | 04-10-2014 |
20140159705 | WAFER EXAMINATION DEVICE AND WAFER EXAMIINATION METHOD - A wafer examination device includes a probe, a fusion section and a measurement section. The probe is made of a metal which reacts with silicon carbide to produce silicide. The fusion section fuses the probe to a silicon carbide wafer as an examined object. The measurement section measures an electrical property of the silicon carbide wafer through the fused probe. | 06-12-2014 |
20140162443 | METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - A method for producing a semiconductor device includes: an arranging process of arranging a plurality of silicon carbide wafers having opposed first and surfaces so that the first surface and the second surface of adjacent silicon carbide wafers face each other and are separated in parallel; and a heat treatment process of heating the arranged plurality of silicon carbide wafers so that the first surface of each silicon carbide wafer becomes higher in temperature than the second surface thereof, and, in the adjacent silicon carbide wafers, the second surface of one silicon carbide wafer becomes higher in temperature than the first surface of the other silicon carbide wafer that faces the second surface. | 06-12-2014 |
20140175518 | III-V HEMT DEVICES - A semiconductor device has a stacked structure in which a p-GaN layer, an SI-GaN layer, and an AlGaN layer are stacked, and has a gate electrode that is formed at a top surface side of the AlGaN layer. A band gap of the AlGaN layer is wider than a band gap of the p-GaN layer and the SI-GaN layer. Moreover, impurity concentration of the SI-GaN layer is less than 1×10 | 06-26-2014 |
20140183620 | SEMICONDUCTOR DEVICE - A semiconductor substrate of a semiconductor device includes a first conductive body region that is formed in the element region; a second conductive drift region that is formed in the element region; a gate electrode that is formed in the element region, that is arranged in a gate trench, and that faces the body region; an insulating body that is formed in the element region and is arranged between the gate electrode and an inside wall of the gate trench; a first conductive floating region that is formed in the element region and that is surrounded by the drift region; a first voltage-resistance retaining structure that is formed in the peripheral region and that surrounds the element region; and a gate pad that is formed in the peripheral region, and is electrically connected to the gate electrode in a position on the element region-side of the first voltage-resistance retaining structure. | 07-03-2014 |
20140191248 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor substrate that has an element region and a peripheral region that surrounds the element region; and a gate pad that is disposed in an area that is on a surface side of the semiconductor substrate. The element region is formed with an insulated gate semiconductor element that has a gate electrode. The peripheral region is formed with a first withstand voltage retaining structure that surrounds the element region and a second withstand voltage retaining structure that is located in a position on the first withstand voltage retaining structure side from an outer edge of the element region and on the element region side from a boundary of the first withstand voltage retaining structure on the element region side. The gate pad is electrically connected to the gate electrode and is disposed in an area in which the second withstand voltage retaining structure is formed. | 07-10-2014 |
20140252465 | SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME - A semiconductor device has a semiconductor substrate including a body region, a drift region, a trench that extends from a surface of the semiconductor substrate into the drift region through the body region, and a source region located adjacent to the trench in a range exposed to the surface of the semiconductor substrate, the source region being isolated from the drift region by the body region. A specific layer is disposed on a bottom of the trench, and it has a characteristic of forming a depletion layer at a junction between the specific layer and the drift region. An insulating layer covers an upper surface of the specific layer and a sidewall of the trench. A conductive portion is formed on a part of the side wall of the trench. The conductive portion is joined to the specific layer, and reaches the surface of the semiconductor substrate. | 09-11-2014 |
20140353683 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a semiconductor substrate preparation step, a semiconductor substrate which is made of SiC and in which a first semiconductor region of a first conductivity type is formed is prepared. In a second semiconductor region forming step, a second semiconductor region is formed by implanting an impurity of a second conductivity type into a first semiconductor region through multiple ion implantation steps while varying implantation depths of the respective multiple ion implantation steps. In the second semiconductor region forming step, a dose amount of the impurity when an implantation energy of multiple ion implantation steps is the largest is smaller than a dose amount of impurity when the implantation energy is not the largest. | 12-04-2014 |
20150214052 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device includes: forming an electric metal layer by depositing metal as art electrode material on an inside of an opening of an insulating layer on a surface of an SiC semiconductor substrate; widening a gap between an inner wall surface in an opening formed in the insulating layer and the electrode metal layer by etching the insulating layer after the electrode metal layer is formed; and forming an ohmic contact between the electrode metal layer and the SiC semiconductor substrate by heating the SiC semiconductor substrate and the metal electrode layer after the insulating layer is etched. | 07-30-2015 |
20160005861 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A semiconductor device is provided with: a first conductivity type contact region; a second conductivity type body region; a first conductivity type drift region of; a trench formed through the contact region and body region from a front surface of the semiconductor substrate, wherein a bottom of the trench is positioned in the drift region; an insulating film covering an inner surface of the trench; a gate electrode accommodated in the trench in a state covered with the insulating film; and a second conductivity type floating region formed at a position deeper than the bottom of the trench, and adjacent to the bottom of the trench. The floating region includes a first layer adjacent to the bottom of the trench and a second layer formed at a position deeper than the first layer, wherein a width of the first layer is broader than a width of the second layer. | 01-07-2016 |
Patent application number | Description | Published |
20100004829 | Torque Control Device for Power System - A torque control device for a power system and facilitates the addition of a new torque control actuator. A target torque signal according to a target torque for the power system is distributed to each actuator in a predetermined distribution priority order. A signal processing filter is mounted on a signal input section of each actuator and allows only a portion of distributed signal that matches the operation characteristics of the actuator to pass through as a command signal for the actuator. | 01-07-2010 |
20100017095 | INTERNAL COMBUSTION ENGINE CONTROL DEVICE - The present invention provides an internal combustion engine control device which is capable of implementing a plurality of functions desired to the internal combustion engine. An adder unit determines a total energy E_total that should be generated by the engine by adding a target work, a target exhaust energy and cooling heat loss, which are calculated in a style of energy. A target fuel supply quantity calculation unit calculates a target fuel supply quantity necessary for generating the E_total. A target intake quantity calculating unit calculates a target intake quantity based on the target fuel supply quantity and a target A/F. A target ignition timing calculation unit calculates a target ignition timing necessary for realizing the target exhaust energy. | 01-21-2010 |
20100047133 | Exhaust Gas Purifying Apparatus for Internal Combustion Engine - The present invention has an object to provide an exhaust gas purifying apparatus for an internal combustion engine capable of obtaining accurate temperature information relating to a catalyst placed in an exhaust passage of the internal combustion engine. The degree of influence emthc of a catalyst inlet gas temperature and catalyst rear end temperature ethuf[end] is calculated (Step | 02-25-2010 |
20120185148 | CONTROL DEVICE FOR INTERNAL COMBUSTION ENGINE - Disclosed is a control device that is used for an internal combustion engine and capable of making various requests concerning the performance of the internal combustion engine be reflected in a target control amount value while the requests need not be expressed in the form of a requested control amount value. The control device acquires various requests concerning the performance of the internal combustion engine and sets a request-specific constraint on a control amount value. More specifically, the control device expresses constraints to be set for control amount values as a set of constraint index values assigned to individual control amount values, and varies the distribution of the constraint index values assigned to the control amount values in accordance with the type of a request. Next, the control device integrates, for each control amount value, the constraint index values assigned to individual requests with respect to each control amount value. Then, in accordance with the distribution of the integrated constraint index value for a control amount, the control device determines a limitation of the control amount, which is defined by an upper-limit value and a lower-limit value. The control device determines a target control amount value within the determined limitation. | 07-19-2012 |
20120316750 | CONTROL APPARATUS FOR INTERNAL COMBUSTION ENGINE - A control apparatus of an internal combustion engine capable of appropriately reflecting various requests relating to the performance of the internal combustion engine. Specifically, the control device of the internal combustion engine acquires various requests relating to the performance of the internal combustion engine, and sets restricted ranges of the value of the control variable in accordance with the details of the requests. At this moment, the control device temporally changes the set restricted ranges for specific requests associated with the time integral value of the control variable rather than the instantaneous value of the control variable. Subsequently, the control device determines a final restricted range on the basis of the overlap between the restricted ranges set for each request, and determines the target value of the control variable in the final restricted range. | 12-13-2012 |
Patent application number | Description | Published |
20110020820 | METHOD FOR DETECTION OF MICROORGANISM AND KIT FOR DETECTION OF MICROORGANISM - A kit is disclosed for preparing a measurement sample for detecting live cells, injured cells, VNC cells and dead microorganism cells in a test sample by the following steps:
| 01-27-2011 |
20110020821 | METHOD FOR DETECTION OF MICROORGANISM AND KIT FOR DETECTION OF MICROORGANISM - According to the following steps, live cells, injured cells, VNC cells and dead cells of a microorganism in a test sample are detected by flow cytometry:
| 01-27-2011 |
20120277121 | KIT FOR DETECTION OF MICROORGANISM - A kit for use in a method for detecting live cells, injured cells and dead cells of a microorganism in a test sample by a nucleic acid amplification method is disclosed. The kit includes a cross-linker capable of cross-linking DNA by irradiation with light having a wavelength of 350 nm to 700 nm, medium, and a primer (s) for amplifying a DNA target region in the microorganism by a nucleic acid amplification method. The nucleic acid amplification method may be a PCR, LAMP, SDA, LCR or DNA microarray method. A cross-linker may be included in the kit such as ethidium monoazide, ethidium diazide, psoralen, 4,5′,8-trimethyl psoralen, or 8-methoxy psoralen. | 11-01-2012 |
20150086995 | METHOD FOR DETECTION OF MICROORGANISM AND KIT FOR DETECTION OF MICROORGANISM - Live cells of a microorganism in a test sample are detected by the following steps:
| 03-26-2015 |