Patent application number | Description | Published |
20100002738 | Nitride-based semiconductor light-emitting device - It is intended to improve operation characteristics of a nitride-based semiconductor light-emitting device including a nitride-based semiconductor crystal substrate having a main surface of a non-polarity plane. | 01-07-2010 |
20100142577 | Nitride semiconductor laser device - A nitride semiconductor laser device includes an n-type AlGaN clad layer, a GaN layer, a first InGaN light guide layer, a light-emitting layer, a second InGaN light guide layer, a nitride semiconductor intermediate layer, a p-type AlGaN layer, and a p-type AlGaN clad layer stacked in this order on a nitride semiconductor substrate, wherein the n-type AlGaN clad layer has an Al composition ratio of 3-5% and a thickness of 1.8-2.5 μm; the first and second InGaN light guide layers have an In composition ratio of 3-6%; the first light guide layer has a thickness of 120-160 nm and greater than that of the second light guide layer; and the p-type AlGaN layer is in contact with the p-type clad layer and has an Al composition ratio of 10-35% and greater than that of the p-type clad layer. | 06-10-2010 |
20100240161 | Method for fabricating nitride semiconductor light-emitting device - A method for fabricating a nitride semiconductor light-emitting device includes the steps of creating a recessed region in a nitride semiconductor substrate having a nonpolar plane or a semipolar plane, and providing a nitride semiconductor thin film including an n-type nitride semiconductor thin film, an active layer and a p-type nitride semiconductor thin film on the nitride semiconductor substrate. The p-type nitride semiconductor thin film is grown at a growth temperature higher than or equal to 700° C. and lower than 900° C. | 09-23-2010 |
20100243988 | Nitride semiconductor light-emitting chip, method of manufacture thereof, and semiconductor optical device - A nitride semiconductor light-emitting chip offers enhanced luminous efficacy as a result of an improved EL emission pattern. The nitride semiconductor laser chip (nitride semiconductor light-emitting chip) has a nitride semiconductor substrate having a principal growth plane, and nitride semiconductor layers grown on the principal growth plane of the nitride semiconductor substrate. The principal growth plane of the GaN substrate is a plane having off-angles in both the a- and c-axis directions relative to an m plane, and the off-angle in the a-axis direction is larger than the off-angle in the c-axis direction. | 09-30-2010 |
20100301348 | Nitride semiconductor wafer, nitride semiconductor chip, and method of manufacture of nitride semiconductor chip - A nitride semiconductor chip is provided that offers enhanced luminous efficacy as a result of an improved EL emission pattern. The nitride semiconductor laser chip (nitride semiconductor chip) has an n-type GaN substrate having as a principal growth plane a plane having an off-angle in the a-axis direction relative to the m plane, and a nitride semiconductor layer formed on the principal growth plane of the n-type GaN substrate. The n-type GaN substrate includes a depressed portion (carved region), which is carved from the principal growth plane in the thickness direction, and an uncarved region, which is a region not carved. The nitride semiconductor layer formed on the n-type GaN substrate has a gradient thickness region whose thickness decreases in a gradient fashion toward the depressed portion (carved region) and an emission portion formation region whose thickness varies very little. In the emission portion formation region | 12-02-2010 |
20110001126 | Nitride semiconductor chip, method of fabrication thereof, and semiconductor device - A nitride semiconductor chip is provided that offers enhanced luminous efficacy and an increased yield as a result of an improved EL emission pattern and improved surface morphology (flatness). This nitride semiconductor laser chip (nitride semiconductor chip) includes a GaN substrate having a principal growth plane and individual nitride semiconductor layers formed on the principal growth plane of the GaN substrate. The principal growth plane is a plane having an off angle in the a-axis direction relative to the m plane, and the individual nitride semiconductor layers include a lower clad layer of AlGaN. This lower clad layer is formed in contact with the principal growth plane of the GaN substrate. | 01-06-2011 |
20110042646 | Nitride semiconductor wafer, nitride semiconductor chip, method of manufacture thereof, and semiconductor device - A nitride semiconductor chip allows enhancement of luminous efficacy. The nitride semiconductor laser chip (nitride semiconductor chip) has a GaN substrate, which has a principal growth plane, and an active layer, which is formed on the principal growth plane of the GaN substrate and which has a quantum well structure including a well layer and a barrier layer. The principal growth plane is a plane having an off angle in the a-axis direction relative to the m plane. The barrier layer is formed of AlGaN, which is a nitride semiconductor containing Al. | 02-24-2011 |
20120063986 | NITRIDE SEMICONDUCTOR LASER DEVICE - A nitride semiconductor laser device includes an n-type AlGaN clad layer, a GaN layer, a first InGaN light guide layer, a light-emitting layer, a second InGaN light guide layer, a nitride semiconductor inter mediate layer, a p-type AlGaN layer, and a p-type AlGaN clad layer stacked in this order on a nitride semiconductor substrate, wherein the n-type AlGaN clad layer has an Al composition ratio of 3-5% and a thickness of 1.8-2.5 μm; the first and second InGaN light guide layers have an In composition ratio of 3-6%; the first light guide layer has a thickness of 120-160 nm and greater than that of the second light guide layer; and the p-type AlGaN layer is in contact with the p-type clad layer and has an Al composition ratio of 10-35% and greater than that of the p-type clad layer. | 03-15-2012 |