Patent application number | Description | Published |
20080232675 | SYSTEM FOR SEARCH AND ANALYSIS OF SYSTEMATIC DEFECTS IN INTEGRATED CIRCUITS - Disclosed is a method of locating systematic defects in integrated circuits. The invention first performs a preliminary extracting and index processing of the circuit design and then performs feature searching. When performing the preliminary extracting and index processing the invention establishes a window grid for the circuit design and merges basis patterns with shapes in the circuit design within each window of the window grid. The invention transforms shapes in a each window into feature vectors by finding intersections between the basis patterns and the shapes in the windows. Then, the invention clusters the feature vectors to produce an index of feature vectors. After performing the extracting and index processing, the invention performs the process of feature searching by first identifying a defect region window of the circuit layout and similarly merging basis patterns with shapes in the defect region window. This merging process can include rotating and mirroring the shapes in the defect region. The invention similarly transforms shapes in the defect region window into defect vectors by finding intersections between basis patterns and the shapes in the defect region. Then, the invention can easily find feature vectors that are similar to the defect vector using, for example, representative feature vectors from the index of feature vectors. Then, the similarities and differences between the defect vectors and the feature vectors can be analyzed. | 09-25-2008 |
20090031263 | METHOD AND SYSTEM FOR ANALYZING AN INTEGRATED CIRCUIT BASED ON SAMPLE WINDOWS SELECTED USING AN OPEN DETERMINISTIC SEQUENCING TECHNIQUE - Disclosed herein are embodiments of a system and an associated method for analyzing an integrated circuit to determine the value of a particular attribute (i.e., a physical or electrical property) in that integrated circuit. In the embodiments, an open deterministic sequencing technique is used to select a sequence of points representing centers of sample windows in an integrated circuit layout. Then, the value of the particular attribute is determined for each sample window and the results are accumulated in order to infer an overall value for that particular attribute for the entire integrated circuit layout. This sequencing technique has the advantage of allowing additional sample windows to be added and/or the sizes and shapes of the windows to be varied without hindering the quality of the sample. | 01-29-2009 |
20090031265 | IC DESIGN MODELING ALLOWING DIMENSION-DEPENDENT RULE CHECKING - A method, system and program product to model an IC design to include dimensions such as a local width and spacing of IC shapes in a consistent fashion. In particular, the invention uses a core portion of Voronoi diagrams to partition edges of a shape into intervals and assigns at least one dimension to each interval such as a local width and spacing. Dimension assignment can be made as any desirable definition set for width and spacing, e.g., numerical values or continuous dimension-dependent design rules. Design rule checking for dimension-dependent spacing rules given in any arbitrary functional form of width and spacing is possible. Application of the invention can be made anywhere the width and spacing of VLSI shapes play a role, e.g., relative to a single edge, neighboring edges, neighboring shapes, and/or for edges in more than one layer of the IC design. | 01-29-2009 |
20090031266 | IC DESIGN MODELING ALLOWING DIMENSION-DEPENDENT RULE CHECKING - A method, system and program product to model an IC design to include dimensions such as a local width and spacing of IC shapes in a consistent fashion. In particular, the invention uses a core portion of Voronoi diagrams to partition edges of a shape into intervals and assigns at least one dimension to each interval such as a local width and spacing. Dimension assignment can be made as any desirable definition set for width and spacing, e.g., numerical values or continuous dimension-dependent design rules. Design rule checking for dimension-dependent spacing rules given in any arbitrary functional form of width and spacing is possible. Application of the invention can be made anywhere the width and spacing of VLSI shapes play a role, e.g., relative to a single edge, neighboring edges, neighboring shapes, and/or for edges in more than one layer of the IC design. | 01-29-2009 |
20090100386 | IC Layout Optimization to Improve Yield - Optimizing an integrated circuit design to improve manufacturing yield using manufacturing data and algorithms to identify areas with high probability of failures, i.e. critical areas. The process further changes the layout of the circuit design to reduce critical area thereby reducing the probability of a fault occurring during manufacturing. Methods of identifying critical area include common run, geometry mapping, and Voronoi diagrams. Optimization includes but is not limited to incremental movement and adjustment of shape dimensions until optimization objectives are achieved and critical area is reduced. | 04-16-2009 |
20090294812 | Optical Sensor Including Stacked Photosensitive Diodes - A complementary metal-oxide-semiconductor (CMOS) image sensor comprises a first photosensitive diode comprising a first semiconductor material is formed in a first semiconductor substrate. A second photosensitive diode comprising a second semiconductor material, which has a different light detection wavelength range than the first semiconductor material, is formed in a second semiconductor substrate. Semiconductor devices for holding and detecting charges comprising a sensing circuit of the CMOS image sensor may also be formed in the second semiconductor substrate. The first semiconductor substrate and the second semiconductor substrate are bonded so that the first photosensitive diode is located underneath the second photosensitive diode. The vertical stack of the first and second photosensitive diodes detects light in the combined detection wavelength range of the first and second semiconductor materials. Sensing devices may be shared between the first and second photosensitive diodes. | 12-03-2009 |
20090294813 | Optical Sensor Including Stacked Photodiodes - A complementary metal-oxide-semiconductor (CMOS) image sensor comprises a first photosensitive diode comprising a first semiconductor material is formed in a first semiconductor substrate. A second photosensitive diode comprising a second semiconductor material, which has a different light detection wavelength range than the first semiconductor material, is formed in a second semiconductor substrate. Semiconductor devices for holding and detecting charges comprising a sensing circuit of the CMOS image sensor may also be formed in the second semiconductor substrate. The first semiconductor substrate and the second semiconductor substrate are bonded so that the first photosensitive diode is located underneath the second photosensitive diode. The vertical stack of the first and second photosensitive diodes detects light in the combined detection wavelength range of the first and second semiconductor materials. Sensing devices may be shared between the first and second photosensitive diodes. | 12-03-2009 |
20100095254 | SYSTEM AND METHOD FOR TESTING PATTERN SENSITIVE ALGORITHMS FOR SEMICONDUCTOR DESIGN - A system and method for generating test patterns for a pattern sensitive algorithm. The method comprises the steps extracting feature samples from a layout design; grouping feature samples into clusters; selecting at least one area from the layout design that covers a feature sample from each cluster; and saving each pattern layout covered by the at least one area as test patterns. | 04-15-2010 |
20110072409 | OPTICAL SENSOR INCLUDING STACKED PHOTODIODES - A complementary metal-oxide-semiconductor (CMOS) image sensor comprises a first photosensitive diode comprising a first semiconductor material is formed in a first semiconductor substrate. A second photosensitive diode comprising a second semiconductor material, which has a different light detection wavelength range than the first semiconductor material, is formed in a second semiconductor substrate. Semiconductor devices for holding and detecting charges comprising a sensing circuit of the CMOS image sensor may also be formed in the second semiconductor substrate. The first semiconductor substrate and the second semiconductor substrate are bonded so that the first photosensitive diode is located underneath the second photosensitive diode. The vertical stack of the first and second photosensitive diodes detects light in the combined detection wavelength range of the first and second semiconductor materials. Sensing devices may be shared between the first and second photosensitive diodes. | 03-24-2011 |