Patent application number | Description | Published |
20080232671 | MASK PATTERN VERIFYING METHOD - A mask pattern verifying method include obtaining first information about a hot spot from design data of a mask pattern, obtaining second information about the mask pattern actually formed on a photo mask, and determining a measuring spot of the mask pattern actually formed on the photo mask, based on the first and second information. | 09-25-2008 |
20080235650 | PATTERN CREATION METHOD, MASK MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A pattern creation method, including laying out data of a most extreme end pattern of integrated circuit patterns on a first layer and laying out data of the integrated circuit patterns excluding the most extreme end pattern on a second layer, extracting data of a first most proximate pattern being most proximate to the most extreme end pattern from the second layer and converting the extracted data to a third layer, generating data of a contacting pattern which contacts both the first most proximate pattern and the most extreme end pattern in a fourth layer, generating data of a non-overlapping pattern of the contacting pattern excluding overlapping portions with the most extreme end pattern and the first most proximate pattern in a fifth layer, extracting data of a second most proximate pattern being most proximate to the non-overlapping pattern and converting the extracted data to the first layer. | 09-25-2008 |
20080250381 | PARAMETER ADJUSTMENT METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND RECORDING MEDIUM - A parameter adjustment method for a plurality of manufacturing devices to form a pattern of a semiconductor device on a substrate using the manufacturing devices includes: adjusting a parameter adjustable for a manufacturing device serving as a reference manufacturing device so as to fall within a range of a predetermined permissible variation and defining the adjusted parameter as a reference parameter of the reference manufacturing device; obtaining a first shape of a pattern of a semiconductor device to be formed on a substrate using the reference manufacturing device from a mask to form the pattern on the substrate when the reference parameter is set to the reference manufacturing device and defining the obtained first shape as a reference finished shape; defining an adjustable parameter of another to-be-adjusted manufacturing device as a to-be-adjusted parameter of the to-be-adjusted manufacturing device; obtaining a second shape of the pattern formed on the substrate using the to-be-adjusted manufacturing device from the mask when the defined to-be-adjusted parameter is set to the to-be-adjusted manufacturing device and defining the obtained second shape as a to-be-adjusted finished shape; calculating a difference amount between the reference finished shape and the to-be-adjusted finished shape; repeatedly calculating the difference amount by changing the to-be-adjusted parameter until the difference amount becomes equal to or less than a predetermined reference value; outputting as a parameter of the to-be-adjusted manufacturing device the to-be-adjusted parameter having the difference amount equal to or less than the predetermined reference value or the to-be-adjusted parameter having the difference amount which becomes equal to or less than the predetermined reference value through the repeated calculation. | 10-09-2008 |
20080301621 | MASK PATTERN CORRECTING METHOD - In a model-based OPC which makes a suitable mask correction for each mask pattern using an optical image intensity simulator, a mask pattern is divided into subregions and the model of optical image intensity simulation is changed according to the contents of the pattern in each subregion. When the minimum dimensions of the mask pattern are smaller than a specific threshold value set near the exposure wavelength, the region is calculated using a high-accuracy model and the other regions are calculated using a high-speed model. | 12-04-2008 |
20080313537 | DOCUMENT MANAGEMENT APPARATUS, DOCUMENT MANAGEMENT METHOD, AND PROGRAM - A method is described for displaying a preview image of a document in which a plurality of constituents is defined. The includes setting an authority for each user with respect to each constituent; displaying on a display device a content of at least one constituent as a preview image; designating a user for whom the preview image is displayed from among users whose authority is set; determining whether the designated user has an authority to display the content of the at least one constituent; and restricting display of a first portion of the content corresponding to each constituent for which the user is determined to have no authority and displaying a second portion of the content corresponding to each constituent for which the user is determined to have the authority. A document management apparatus for implementing the method is described which may be implemented, for example, using a computer. | 12-18-2008 |
20090154214 | SEMICONDUCTOR MEMORY - Borderless contacts for word lines or via contacts for bit lines are formed using interconnect patterns, a part of which is removed. A semiconductor memory includes: a plurality of active regions AA | 06-18-2009 |
20090186429 | Method for correcting a mask pattern, system for correcting a mask pattern, program, method for manufacturing a photomask and method for manufacturing a semiconductor device - A computer implemented method for correcting a mask pattern includes: predicting a displacement of a device pattern by using a mask pattern to form the device pattern and a variation of a process condition; determinating an optical proximity correction value so that the displacement falls within a displacement tolerance of the device pattern; and correcting the mask pattern using the optical proximity correction value. | 07-23-2009 |
20090192643 | PROCESS CONTROLLER, PROCESS CONTROL METHOD, AND COMPUTER-READABLE RECORDING MEDIUM - A process control method comprises adjusting a process condition in consideration of a performance variation among a plurality of manufacturing apparatuses, the performance variation affecting a finished shape of a pattern used to manufacture a semiconductor device, running a simulation of the finished shape under the adjusted process condition, extracting a dangerous point of the pattern affecting satisfaction from the result of the simulation, comparing a first process capability serving as a judgment standard to find whether a production schedule of the device is achieved with a second capability serving to form a dangerous pattern containing the dangerous point, and improving the second process when the second process capability is lower than the first process capability. | 07-30-2009 |
20090195829 | PRINTING SYSTEM, INFORMATION PROCESSING APPARATUS, DATA PROCESSING METHOD, AND STORAGE MEDIUM - A dummy driver in a terminal server determines whether an interface that cannot be used by a printer driver which is directly accessed by an application needs to be used in a print setting set by the application. If the dummy driver determines that the interface which cannot be used by the printer driver needs to be used, the dummy driver generates a print setting using a print setting that does not need to use a unique interface. Then, validation of the print setting is performed by a printer driver in a client and the print setting is replaced with a print setting of on a common interface. Then, the printing process is executed by the print setting generated by the printer driver in the client. | 08-06-2009 |
20090199153 | EXPOSURE CONDITION SETTING METHOD AND PROGRAM FOR SETTING EXPOSURE CONDITIONS - There is provided an exposure condition setting method concerning an example of the present invention, the method includes inputting design layout data, extracting a plurality of design patterns having a predetermined dimension from the input design layout data, obtaining a transfer pattern transferred to a transfer target film by exposure of a mask pattern from the mask pattern associated with the extracted patterns, and calculating a dimensional fluctuation amount of the transfer pattern and a design value of the design pattern, obtaining a distribution of the number of the extracted design patterns associated with the dimensional fluctuation amount of the extracted design pattern, and setting exposure conditions in such a manner that the dimensional fluctuation amount of the extracted design pattern associated with a reference value in the distribution of the number of design patterns satisfies allowance conditions. | 08-06-2009 |
20090217233 | SIMULATION METHOD AND SIMULATION PROGRAM - A method of simulating an optical intensity distribution on a substrate when a mask pattern formed on the mask is transferred to the substrate through a projection optical system by irradiating an illumination light obliquely on a mask surface of the mask, which comprises setting a phase difference between a zero-order diffraction light and a first-order diffraction light determined according to at least one of a distance between the zero-order diffraction light and the first-order diffraction light on a pupil of the projection optical system, thickness of a light-shielding portion formed on the mask, angle defined by an optical axis direction of the illumination light and an incident direction on the mask, and a difference between a size of the mask pattern and a half cycle of the mask pattern, and carrying out a simulation of the optical intensity distribution on the substrate according to the set phase difference. | 08-27-2009 |
20090219555 | INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, AND COMPUTER-READABLE STORAGE MEDIUM - An information processing apparatus includes a storing unit configured to store, in a storage device, print setting information including a hierarchical structure of a document and a print attribute associated with a hierarchical level of the document, and a setting unit configured to, when the print attribute in the print setting information stored in the storage device is applied to a selected document, compare a hierarchical structure of the selected document and the hierarchical structure of the print setting information and to set a print attribute to an appropriate hierarchical level of the selected document based on a comparison result and the print attribute of the print setting information. | 09-03-2009 |
20090265680 | Method and system for correcting a mask pattern design - A pattern verification method comprising preparing a desired pattern and a mask pattern forming the desired pattern on a substrate, defining at least one evaluation point on an edge of the desired pattern, defining at least one process parameter to compute the transferred/formed pattern, defining a reference value and a variable range for each of the process parameters, computing a positional displacement for each first points corresponding to the evaluation point, first points computed using correction mask pattern and a plurality of combinations of parameter values obtained by varying the process parameters within the variable range or within the respective variable ranges, the positional displacement being displacement between first point and the evaluation point, computing a statistics of the positional displacements for each of the evaluation points, and outputting information modifying the mask pattern according to the statistics. | 10-22-2009 |
20090291512 | SEMICONDUCTOR DEVICE PATTERN VERIFICATION METHOD, SEMICONDUCTOR DEVICE PATTERN VERIFICATION PROGRAM, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - Information on a transfer pattern created from a design pattern corresponding to a pattern to be formed on a substrate is acquired as pattern transfer information. The design pattern is compared with the transfer pattern and, on the basis of the feature quantity obtained from the comparison, the pattern transfer information and the design pattern are classified. A threshold value is set for the feature quantity and, on the basis of the threshold value, the pattern transfer information and the design pattern are further classified. Then, verification is conducted to see if the transfer pattern satisfies the threshold value. | 11-26-2009 |
20090293038 | METHOD AND CORRECTION APPARATUS FOR CORRECTING PROCESS PROXIMITY EFFECT AND COMPUTER PROGRAM PRODUCT - A process proximity effect (PPE) correction method includes providing corrected cells arranged in a place/route arrangement, the corrected cells being obtained by correcting design data of a semiconductor device based on correction value for correcting PPE correction, determining whether a cell arrangement of the corrected cells is registered or not based on environmental profiles, conducting lithography verification if the corrected cells includes the cell arrangement not registered in the environmental profiles, the verification being performed on the corrected cells, wherein the corrected cell to be conducted the verification corresponds to the cell arrangement not registered, determining whether error is found or not in the verification, correcting the corrected cell to which the verification is conducted if the error is found and registering the cell arrangement in the environmental profiles, and registering the cell arrangement of the corrected cell if the error is not found. | 11-26-2009 |
20090305172 | LITHOGRAPHY SIMULATION METHOD, COMPUTER PROGRAM PRODUCT, AND PATTERN FORMING METHOD - A lithography simulation method for estimating an optical image to be formed on a substrate when a mask pattern is transferred onto the substrate includes dividing the mask pattern into first calculation areas having sizes determined by a range affected by OPC, the range being obtained correspondingly to an exposure wavelength, a numerical aperture and an illumination shape which are used in the transferring the mask pattern onto the substrate, dividing the each of the first calculation areas into second calculation areas, calculating first electromagnetic field distributions formed by illuminating the mask pattern with exposure light and corresponding to the second calculation areas, obtaining second electromagnetic field distributions corresponding to the first calculation areas by synthesizing the first electromagnetic field distributions for each of the first calculation areas, and calculating the optical image to be formed on the substrate by using the second electromagnetic field distributions. | 12-10-2009 |
20100072454 | EXPOSURE METHOD, AND SEMICONDUCTOR DEVICE - An exposure method includes an exposure process for exposing a substrate through a halftone mask with quadrupole illumination to form plural columnar portions that are disposed into a matrix shape in a first direction and a second direction orthogonal to the first direction. The halftone mask includes a first pattern that is extended in the first direction and disposed at predetermined pitches in the second direction; and a second pattern that is extended in the second direction and disposed at predetermined pitches in the first direction such that an intersection portion intersecting the first pattern is formed. The pitches and widths of the patterns on the halftone mask are configured such that zero-order diffracted light intensity and first-order diffracted light intensity, diffracted by the halftone mask, are substantially matched with each other and such that a first-order diffracted light phase is inverted with respect to a zero-order diffracted light phase. | 03-25-2010 |
20100081295 | PROCESS MODEL EVALUATION METHOD, PROCESS MODEL GENERATION METHOD AND PROCESS MODEL EVALUATION PROGRAM - According to an aspect of the present invention, there is provided a method for evaluating a process model, the method including: acquiring, for each of given patterns, a dimensional difference amount between: a first pattern that is formed by actually applying a process onto a corresponding one of the given patterns; and a second pattern that is calculated by applying a process model modeling the process to the corresponding one of the given patterns; and evaluating the process model based on an evaluation index, the evaluation index being based on the number of the patterns at which the dimensional difference amount is equal to or less than a threshold value. | 04-01-2010 |
20100112485 | Reticle set, method for designing a reticle set, exposure monitoring method, inspection method for reticle set and manufacturing method for a semiconductor device - A reticle set, includes a first photomask having a circuit pattern provided with first and second openings provided adjacent to each other sandwiching a first opaque portion, and a monitor mark provided adjacent to the circuit pattern; and a second photomask having a trim pattern provided with a second opaque portion covering the first opaque portion in an area occupied by the circuit pattern and an extending portion connected to one end of the first opaque portion and extending outside the area when the second photomask is aligned with a pattern delineated on a substrate by the first photomask. | 05-06-2010 |
20100159709 | MASK PATTERN CORRECTING METHOD, MASK PATTERN INSPECTING METHOD, PHOTO MASK MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A pattern correcting method for correcting a design pattern to form a desired pattern on a wafer is disclosed, which comprises defining an allowable dimensional change quantity of each of design patterns, defining a pattern correction condition for the each design pattern based on the allowable dimensional change quantity defined for the each design pattern, and correcting the each design pattern based on the pattern correction condition defined for the each design pattern. | 06-24-2010 |
20100238477 | INFORMATION PROCESSING APPARATUS, AND NETWORK SETTING METHOD - A print window is displayed by an application, and a printer name is selected by a user. When the printer name is selected, OS loads printer driver to cause the printer driver to execute print processing. Then, the printer driver performs change processing of an output port in initialization processing when needed, and outputs printing information to an image forming apparatus. | 09-23-2010 |
20100275174 | Semiconductor device pattern creation method, pattern data processing method, pattern data processing program, and semiconductor device manufacturing method - A correction target pattern having a size not more than a threshold value is extracted from first design data containing a pattern of a semiconductor integrated circuit. The first characteristic of the semiconductor integrated circuit is calculated on the basis of the first design data. Second design data is generated by correcting the correction target pattern contained in the first design data. The second characteristic of the semiconductor integrated circuit is calculated on the basis of the second design data. It is checked whether the characteristic difference between the first characteristic and the second characteristic falls within a tolerance. It is decided to use the second design data to manufacture the semiconductor integrated circuit when the characteristic difference falls within the tolerance. | 10-28-2010 |
20100302565 | INFORMATION PROCESSING APPARATUS, CONTROL METHOD, AND COMPUTER-READABLE STORAGE MEDIUM - An information processing apparatus which can be connected to a printing apparatus and a post-processing apparatus configured to perform post-processing on a sheet output from the printing apparatus includes an identification unit configured to identify a size of the sheet to be changed by executing first post-processing to the sheet output from the printing apparatus, a designation unit configured to designate a position on which second post-processing is executed to the sheet to which the first post-processing has been executed, and a display control unit configured to display a preview image for identifying a position on which the second post-processing is executed with respect to the size of the sheet identified by the identification unit based on the size of the sheet identified by the identification unit and the position on which the second post-processing is executed. | 12-02-2010 |
20100309708 | SEMICONDUCTOR MEMORY - Borderless contacts for word lines or via contacts for bit lines are formed using interconnect patterns, a part of which is removed. A semiconductor memory includes: a plurality of active regions AA | 12-09-2010 |
20110041104 | Semiconductor circuit pattern design method for manufacturing semiconductor device or liquid crystal display device - A semiconductor circuit pattern design method includes the following operations. A design pattern is created by placing a plurality of cells in each functional block as a unit of the semiconductor circuit and executing routing among the plurality of placed cells. Mask pattern data based on the design pattern is created. A predictive pattern to be formed on the substrate by the mask pattern data is predicted. A difference amount between the predictive pattern and a target pattern to be formed on the substrate by the mask pattern data is checked. The difference amount is compared with a predetermined allowable variation amount. If the difference amount is larger than the allowable variation amount in the comparison, at least one of placement and routing of the cells in the design pattern corresponding to the mask pattern data used to predict the predictive pattern is corrected. | 02-17-2011 |
20110170137 | PRINTING SYSTEM AND PRINTING APPARATUS - A printer receives changes to printing conditions by a user when executing reprinting. The printer selects whether to execute reprinting based on application data held in a host computer, or execute reprinting based on printing data held in the printer. If the printer selects executing of reprinting based on application data, the reprint request is sent to the host computer. If the printer selects executing of reprinting based on printing data held in the printer, reprinting is performed based on printing data held in the printer. | 07-14-2011 |
20120119304 | SEMICONDUCTOR MEMORY - A semiconductor memory includes: a plurality of active regions AA | 05-17-2012 |
20120127454 | PATTERN FORMING METHOD - According to one embodiment, a pattern including first and second block phases is formed by self-assembling a block copolymer onto a film to be processed. The entire block copolymer present in a first region is removed under a first condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in a region other than the first region. The first block phase present in a second region is selectively removed under a second condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in an overlap region between a region other than the first region and a region other than the second region, and leaving a pattern of second block phase in the second region excluding the overlap region. The film is etched with the left patterns as masks. | 05-24-2012 |
20130075360 | METHOD OF FORMING PATTERN - According to one embodiment, there is provided a method of forming a pattern, includes forming a guide pattern including a first region having a first surface energy and a second region having a second surface energy on a to-be-processed film, the first and second regions alternately arranged in one direction, forming a block copolymer layer on the guide pattern, and causing microphase separation in the block copolymer layer, the microphase-separated structure is a lamellar block copolymer pattern. | 03-28-2013 |