Wei-Yao
Wei-Yao Chang, Tu-Cheng TW
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20090277282 | FIXTURE FOR TORQUE METER AND APPARATUS HAVING THE FIXTURE FOR TESTING TORQUE - A fixture for a torque meter includes a bearing having a cylindrical stator and a rotor, two or more arms, and two or more elastic members. The cylindrical stator defines a through hole therein. The rotor is rotatably received in the through hole and is configured for holding the torque meter. The at least two arms are respectively connected to two opposite sides of the cylindrical stator. Each of the elastic members elastically supporting a corresponding arm, a compression direction and a rebound direction of the elastic members are parallel to a rotation axis of the rotor. | 11-12-2009 |
20090322007 | TOOL FOR CLAMPING OPTICAL GLASS ELEMENT - A tool for clamping an optical glass element includes a first arm, a second arm, a first clamping portion and a second clamping portion. The first and second arms are pivotally connected with each other and are rotatable relative to each other about a first axis. The first clamping portion is rotatably connected to an end portion of the first arm distal from the first axis and is rotatable relative to the first arm about a second axis. The second axis is substantially perpendicular to the first axis. The second clamping portion is rotatably connected to an end portion of the second arm distal from the first axis and is rotatable relative to second arm about a third axis. The third axis is substantially perpendicular to the first axis. The first and second clamping portions are configured for cooperatively clamping the optical glass element therebetween. | 12-31-2009 |
Wei-Yao Chen, Taoyuan Hsien TW
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20120021629 | INTELLIGENT ELECTRICAL CONNECTOR - An intelligent electrical includes a metallic shielding case, an insulating main body, plural conducting terminals and at least one detecting element. The metallic shielding case includes a receiving space and at least one elastic sustaining element. The insulating main body includes a first body part and a second body part. The first body part is accommodated within the receiving space. The second body part is exposed outside the metallic shielding case. The detecting element is disposed on the second body part, arranged beside the elastic sustaining element of the metallic shielding case, and selectively contacted with or separated from the elastic sustaining element. When the elastic sustaining element is contacted with the detecting element, the electricity is permitted to be transmitted through the intelligent electrical connector. Whereas, when the elastic sustaining element is separated from the detecting element, the electricity fails to be transmitted through the intelligent electrical connector. | 01-26-2012 |
Wei-Yao Cheng, Taipei City TW
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20130197836 | VOLTAGE AND CURRENT MEASURING DEVICE - A voltage and current measuring device includes a plurality of voltage measuring modules, a plurality of one-way current measuring modules, a plurality of two-way current measuring modules, a voltage transformation module, a communication interface module, and a processor. The modules are integrated to provide different ways of measuring voltage and current concurrently, enable peripheral expansion, and facilitate power supply. Hence, the device features integration and versatility, speeds up a measurement process, and cuts production costs. | 08-01-2013 |
20130332099 | CURRENT MEASUREMENT SYSTEM - A current measurement system precisely measures a current generated by a circuit under test. The current measurement system has a sampling unit serially connected to the circuit under test for the acquisition of a first voltage. The first voltage is amplified and transformed to a second voltage by an amplifying unit. A noise suppression unit filters analog voltage noises produced from the second voltage and transforms the second voltage to a third voltage. The third voltage is converted into a voltage signal in a digital format by a conversion unit. The voltage signal undergoes calibrations and turns into a measure signal by using a processing unit and a stored calibration linear equation. The measure signal indicates a precise measurement of the current. A memory unit stores a gradient and a bias voltage level required for the calibration linear equation. | 12-12-2013 |
Wei-Yao Chou, Taipei TW
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20110051626 | SYSTEM AND METHOD FOR WIRELESS NODE CONNECTION - Systems and methods for wireless node connection are provided. The system includes a first wireless node and a second wireless node connected to a network. The first wireless node transmits a beacon packet with at least one connection parameter corresponding to the first wireless node. The second wireless node receives the beacon packet from the first wireless node, and analyzes the beacon packet to obtain the connection parameter corresponding to the first wireless node. The second wireless node wirelessly connects to the first wireless node according to the connection parameter. At least one wireless terminal connects to the network via the first wireless node and the second wireless node. Wireless network deployment often requires a wireless node to construct wireless link to another wireless node. Such deployment type is commonly used in point-to-point or point-to-multipoint wireless infrastructure. A push-to-connect algorithm is used to support the automatic wireless connection among multiple wireless nodes. A time synchronization key exchange algorithm is used to enhance the security of any wireless link between two wireless nodes. | 03-03-2011 |
Wei-Yao Lin, Hsinchu County TW
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20100002344 | HIGH VOLTAGE TOLERANCE CIRCUIT - A high voltage tolerance circuit includes a first transistor, a second transistor, a third transistor, and a latch-up device. The first transistor and the second transistor are controlled by a control signal. The gate of the third transistor is coupled to a ground through the first transistor. The gate of the third transistor is coupled to an I/O pad through the second transistor. The third transistor is coupled between a power supply and a node. The latch-up device is coupled between the node and the I/O pad. | 01-07-2010 |
20100123509 | PAD CIRCUIT FOR THE PROGRAMMING AND I/O OPERATIONS - A pad circuit includes a pad, a gate driving circuit, a voltage selection circuit, and an ESD detection/avoiding circuit. The gate driving circuit is used to discharge the ESD induced current. The ESD detection/avoiding circuit is used to isolate the ESD induced voltage. The voltage selection circuit selects a higher voltage from a power/ground terminal and the pad and outputs it to the gate driving circuit, so that the pad circuit can be used for the programming and 1/0 operations. | 05-20-2010 |
20100259858 | POWER SWITCH EMBEDDED IN ESD PAD - A driver circuit has a pad that may be utilized for programming a core circuit or receiving a data signal. A trace high circuit receives a pad voltage signal from the pad, and outputs a trace high voltage approximating a higher voltage of the pad voltage signal and the power supply voltage. A level shifter and a first inverter output a pull high control signal generated by inverting and level shifting a programming control signal. An ESD blocking circuit selectively blocks the pad voltage signal from reaching the core circuit depending on the pad voltage signal and the level-shifted programming control signal. A pull high circuit receives the pull high control signal and the power supply voltage, and outputs the power supply voltage to the core circuit when the pull high control signal is lower than the power supply voltage. | 10-14-2010 |
20110063762 | FLASH MEMORY CIRCUIT WITH ESD PROTECTION - A flash memory circuit with ESD protection includes a plurality of flash memory blocks, a pad, an ESD transistor, a pass transistor, and a gate driving circuit. The gate driving circuit has an inverter circuit for receiving a control voltage and outputting an output voltage, a resistor for receiving a pad voltage from the pad, and a capacitor for delaying a change in the control voltage. The ESD transistor is coupled to the pad, a power supply, and the output terminal of the inverter circuit. The pass transistor is coupled to one of the flash memory blocks and the pad, and is controlled by the output voltage. A well terminal of the pass transistor is coupled to the resistor for keeping the pass transistor turned off during electrostatic discharge through the pad. | 03-17-2011 |
20110235454 | High-voltage selecting circuit which can generate an output voltage without a voltage drop - A high-voltage selecting circuit generates an output voltage with no voltage drop by means of an auxiliary NMOS transistor turning on the corresponding selecting PMOS transistor of the high-voltage selecting circuit when the voltage levels of a first input voltage and a second input voltage are equal. In addition, when one of the first input voltage and the second input voltage is higher than the other one, the high-voltage selecting circuit avoids the leakage current by means of an auxiliary PMOS transistor turning off the corresponding selecting PMOS transistor of the high-voltage selecting circuit. In this way, the high-voltage selecting circuit can correctly generate the output voltage according to the first input voltage and the second input voltage, and avoid the leakage current at the same time. | 09-29-2011 |
20110310514 | Electrostatic discharge protection circuit - An electrostatic discharge (ESD) protection circuit is coupled between a first terminal and a second terminal of an integrated circuit. The integrated circuit receives an input signal through the first terminal. The second terminal is coupled to a voltage source. The ESD protection circuit includes a PMOS transistor and a deep N-well NMOS transistor. When the static electricity is inputted to the first terminal, the static electricity flows to the voltage source through the corresponding parasitic diode and the corresponding parasitic bipolar transistor of the PMOS transistor and the deep N-well NMOS transistor. In addition, the input signal is not affected by the ESD protection circuit because the parasitic diodes of the PMOS transistor and the deep N-well NMOS transistor are reversely connected. Thus, the ESD protection circuit prevents the integrated circuit from being damaged by the static electricity and increases the operation voltage range of the input signal. | 12-22-2011 |
Wei-Yao Lin, Zhudong Township TW
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20140197521 | SEMICONDUCTOR DEVICE HAVING TWO-WAY CONDUCTION CHARACTERISTICS, AND ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT INCORPORATING THE SAME - A semiconductor device includes an n-type first doped region for receiving an external voltage, an n-type second doped region and a p-type third doped regions all formed in a p-type substrate, and is configured to have a first threshold voltage for forward conduction between the first and second doped regions, and a second threshold voltage for forward conduction between the first and third doped regions. A current is drained by flowing through the first doped region, the substrate and the second doped region if the external voltage is greater than the first threshold voltage or by flowing through the third doped region, the substrate and the first doped region if the external voltage is less than the second threshold voltage. | 07-17-2014 |