Patent application number | Description | Published |
20100000857 | COPPER SPUTTERING TARGET MATERIAL AND SPUTTERING METHOD - A copper sputtering target material includes a sputter surface formed of a copper material including one crystal orientation plane and other crystal orientation planes. By application of accelerated specified inert gas ions, the one crystal orientation plane emits sputter particles with energy greater than energy of sputter particles sputtered out of the other crystal orientation planes. The occupying proportion of the one crystal orientation plane to the sum of the one crystal orientation plane and the other crystal orientation planes is not less than 15%. | 01-07-2010 |
20100096172 | Wiring structure and method for fabricating the same - A wiring structure has a silicon layer, a backing layer provided on the silicon layer, the backing layer comprising a copper alloy containing a nickel, and a copper layer provided on the backing layer, and a diffusion barrier layer having an electrical conductivity, the diffusion barrier layer being provided at a region including an interface between the silicon layer and the backing layer, in which a nickel in the diffusion barrier layer is enriched compared with the backing layer. | 04-22-2010 |
20100096755 | Wiring structure and method for fabricating the same - A wiring structure has a silicon layer, a backing layer provided on the silicon layer, the backing layer comprising a copper alloy containing a manganese, and a copper layer provided on the backing layer, and a diffusion barrier layer having an electrical conductivity, the diffusion barrier layer being provided at a region including an interface between the silicon layer and the backing layer, in which a manganese in the diffusion barrier layer is enriched compared with the backing layer. | 04-22-2010 |
20100307914 | Cu-Ga ALLOY, SPUTTERING TARGET, Cu-Ga ALLOY PRODUCTION METHOD, AND SPUTTERING TARGET PRODUCTION METHOD - A Cu—Ga alloy includes a plurality of phases, and not less than 40 wt % and not more than 60 wt % of gallium (Ga) and a balance consisting of copper and an inevitable impurity. The plurality of phases include a segregation phase including not less than 80 wt % of gallium (Ga), and a rate of a volume of the segregation phase to a total volume of the Cu—Ga alloy is not more than 1%. The plurality of phases include particles including not less than 40 wt % and not more than 60 wt % of gallium (Ga), the particles include a diameter of not less than 0.1 μm and not more than 30 μm, and a rate of a volume of the particles to the total volume of the Cu—Ga alloy is not less than 90%. | 12-09-2010 |
20110139615 | SPUTTERING TARGET MATERIAL - A sputtering target material includes a copper alloy made of an oxygen free copper with a purity of 99.99% or more doped with Ag of 200 to 2000 ppm. The sputtering target material is formed by casting and rolling. An average grain size of crystal is 30 to 100 μm. A ratio (220)/(111) which is a ratio of an orientation ratio of (220) plane to an orientation ratio of (111) plane calculated based on a peak intensity measurement of an X-ray diffraction at a sputtering surface is 6 or less and a standard deviation indicating a dispersion in the ratio (220)/(111) is 10 or less. | 06-16-2011 |
20110284372 | Cu-Ga ALLOY MATERIAL, SPUTTERING TARGET, METHOD OF MAKING Cu-Ga ALLOY MATERIAL, Cu-In-Ga-Se ALLOY FILM, AND METHOD OF MAKING Cu-In-Ga-Se ALLOY FILM - According to one embodiment of the invention, a Cu—Ga alloy material has an average composition consisting of not less than 32% and not more than 53% by mass of gallium (Ga) as well as the balance consisting of copper (Cu) and an inevitable impurity. In the Cu—Ga alloy material, a region containing less than 47% by mass of copper accounts for 2% or less by volume of the whole Cu—Ga alloy material. | 11-24-2011 |