Patent application number | Description | Published |
20100000632 | LAMINATE STEEL SHEET FOR TWO-PIECE CAN, METHOD FOR PRODUCTION OF TWO-PIECE CAN, AND TWO-PIECE LAMINATE CAN - A laminated steel sheet for a two-piece can body with a high strain level satisfying the following formulae, the polyester resin layer composing the laminated steel sheet having a center line surface roughness (Ra) of 0.2 μm to 1.8 μm: | 01-07-2010 |
20100275846 | PLASMA PROCESSING METHOD, PLASMA PROCESSING APPARATUS, AND COMPUTER RECORDING MEDIUM - According to the present invention, plasma oxidation processing and plasma nitridation processing are applied at the same time to the surface of a semiconductor substrate by plasma using a microwave. After forming an insulating film by the plasma oxynitridation processing as described above, the plasma nitridation processing is further applied to the insulating film as necessary. Thereby, it is possible to form the insulating film with an excellent electrical characteristic. | 11-04-2010 |
20110067798 | DI FORMING WATER-BASED COLLANT OF LAMINATED METAL SHEET AND METHOD FOR DI FORMING LAMINATED METAL SHEET - A DI forming water-based coolant of a laminated metal sheet includes at least one kind of base (a) selected from alkanolamines and alkali metal hydroxides, a fatty acid (b), and water (c), wherein the total content of the base (a) and the fatty acid (b) is 0.02 to 4% by mass and the ratio of a straight-chain fatty acid having a carbon number of 6 to 12 in the fatty acid (b) is 80 to 100% by mass. | 03-24-2011 |
20140090987 | METHOD FOR EVALUATING CORROSION RESISTANCE OF CANS TO CONTENTS - A method to evaluate the corrosion resistance of a can to a content includes filling the can with the content to form a specimen, setting the specimen in an apparatus capable of blocking an outside atmosphere from entering the specimen, optionally saturating the content with nitrogen gas to expel dissolved oxygen present in the content, thereafter while maintaining the temperature of the content at a constant temperature in the range of 25 to 60° C., applying a constant potential that is more anodic than an immersion potential by 50 mV to 200 mV to the can of the specimen, and evaluating the corrosion resistance of the can to the content based on the accumulated amount of electricity generated during a time appropriately selected from 6 to 48 hours immediately after the application of the constant potential. | 04-03-2014 |
20140162055 | RESIN COATED METAL SHEET - A resin coated metal sheet includes a metal sheet, a first resin coating layer formed on one main surface of the metal sheet and formed of a resin material whose difference between a heat quantity of crystallization and a heat quantity of fusion after being laminated to the metal sheet is 0 J/g to 20 J/g on a unit weight basis, and a second resin coating layer formed on another main surface of the metal sheet. | 06-12-2014 |
20140339123 | LAMINATED METAL SHEET AND FOOD CAN CONTAINER - A first polyester resin layer formed on a surface of a metal sheet to serve as the exterior of a container after being formed into the container contains 30% to 60% by mass of poly-ethylene terephthalate or copolymerized polyethylene terephthalate having a copolymerization component content of less than 6 mol %, and 40% to 70% by mass of polybutylene terephthalate. A second polyester resin layer formed on a surface of the metal sheet to serve as the interior of a container after being formed into the container is copolymerized polyethylene terephthalate having a copolymerization component content of less than 14 mol %. The degree of residual orientation of the first and the second polyester resin layers is in a range of 2% to 50%. The thicknesses of the first and the second polyester resin layers after lamination are not less than 6 μm. | 11-20-2014 |
Patent application number | Description | Published |
20080317975 | Cleaning Method and Plasma Processing Method - In a RLSA microwave plasma processing apparatus that radiates microwave from a microwave generator into a chamber by using a planer antenna (Radial Line Slot Antenna) having many slots formed according to a certain pattern, the chamber contaminated with Na or the like is cleaned by using a cleaning gas containing H | 12-25-2008 |
20100093186 | METHOD FOR FORMING SILICON OXIDE FILM, PLASMA PROCESSING APPARATUS AND STORAGE MEDIUM - The present invention provides a method for forming a silicon oxide film, with a substantially uniform film thickness and without being so influenced by dense sites and scattered sites in a pattern provided on an object to be processed, while keeping advantageous points of a plasma oxidation process performed under a lower-pressure and lower-oxygen-concentration condition. In this method, plasma of a processing gas is applied to a surface of the object having a concavo-convex pattern, in a processing chamber of a plasma processing apparatus, so as to oxidize silicon on the surface of the object, thereby forming the silicon oxide film. The plasma is generated under the condition that a ratio of oxygen in the processing gas is within a range of 0.1% to 10% and pressure is within a range of 0.133 Pa to 133.3 Pa. This plasma oxidation process is performed, with a plate, having a plurality of through-holes formed therein, being provided between a region for generating the plasma in the processing chamber and the object to be processed. | 04-15-2010 |
20100136797 | PLASMA OXIDATION PROCESSING METHOD, PLASMA PROCESSING APPARATUS AND STORAGE MEDIUM - A silicon oxide film is formed in a processing chamber of a plasma processing apparatus by performing oxidation process, by using plasma to a processing object having a patterned irregularity, wherein the plasma is generated while high-frequency power is supplied to a mount table under the conditions that the oxygen content in a process gas is not less than 0.5% and less than 10% and the process pressure is 1.3 to 665 Pa. | 06-03-2010 |
20110024048 | PLASMA PROCESSING APPARATUS - In a plasma oxidation processing apparatus ( | 02-03-2011 |
20110174776 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND END POINT DETECTION METHOD - A plasma processing apparatus ( | 07-21-2011 |
Patent application number | Description | Published |
20100093185 | METHOD FOR FORMING SILICON OXIDE FILM, PLASMA PROCESSING APPARATUS AND STORAGE MEDIUM - The present invention provides a method for forming a silicon oxide film, with a substantially uniform film thickness and without being so influenced by dense sites and scattered sites in a pattern provided on an object to be processed, while keeping advantageous points of a plasma oxidation process performed under a lower-pressure and lower-oxygen-concentration condition. In this method, plasma of a processing gas is applied to a surface of the object having a concavo-convex pattern, in a processing chamber of a plasma processing apparatus, so as to oxidize silicon on the surface of the object, thereby forming the silicon oxide film. The plasma is generated under the condition that a ratio of oxygen in the processing gas is within a range of 0.1% to 10% and pressure is within a range of 0.133 Pa to 133.3 Pa. This plasma oxidation process is performed, with a plate, having a plurality of through-holes formed therein, being provided between a region for generating the plasma in the processing chamber and the object to be processed. | 04-15-2010 |
20110171835 | METHOD AND APPARATUS FOR FORMING SILICON OXIDE FILM - A method of forming a silicon oxide film on silicon exposed on a surface of a workpiece includes mounting the workpiece on a mounting table in a processing chamber; generating plasma of a process gas containing oxygen by supplying the process gas into the processing chamber; applying a bias to the workpiece by supplying high-frequency power to the mounting table; and forming the silicon oxide film by applying the plasma to the biased workpiece and oxidizing the silicon. A ratio of oxygen in the process gas is set to be in the range of 0.1% to 10%. A pressure in the processing chamber is set to be in the range of 1.3 Pa to 266.6 Pa upon forming the silicon oxide film. An output of the high-frequency power is set to be in the range of 0.14 W/cm | 07-14-2011 |
20110174441 | PLASMA PROCESSING APPARATUS - Provided is a plasma processing apparatus wherein an electrode embedded in a mounting table is supplied with high frequency power for biasing. A surface, which is exposed to plasma and is of an aluminum cover functioning as an opposite electrode to the electrode of the mounting table, is coated with a protection film, preferably a Y | 07-21-2011 |
Patent application number | Description | Published |
20120094505 | METHOD FOR SELECTIVE OXIDATION, DEVICE FOR SELECTIVE OXIDATION, AND COMPUTER-READABLE MEMORY MEDIUM - A selective oxidation treatment method in which plasma of a hydrogen gas and an oxygen containing gas is allowed to act on an object to be treated, and in which silicon and a metallic material are exposed in the surface, within a treatment container of a plasma treatment apparatus comprises: after the supply of the hydrogen gas from a hydrogen gas supply source is initiated by using a first inert gas, which passes through a first supply path, as a carrier gas, initiating the supply of the oxygen containing gas from an oxygen containing gas supply source by using a second inert gas, which passes through a second supply path, as a carrier gas before the plasma is ignited; igniting the plasma of a treatment gas including the oxygen containing gas and the hydrogen gas within the treatment container; and selectively oxidizing the silicon by the plasma. | 04-19-2012 |
20140034636 | MICROWAVE IRRADIATION APPARATUS - A microwave irradiation apparatus, for performing a predetermined process by irradiating a microwave to a target substrate, includes a processing chamber configured to accommodate the target substrate, a support member configured to support the target substrate in the processing chamber, and a microwave introduction mechanism configured to generate microwaves and introduce the microwaves into the processing chamber. The microwave irradiation apparatus further includes microwave introduction ports through which the microwave generated by the microwave introducing mechanism is introduced into the processing chamber, electric field sensors configured to measure an electric field formed by the microwave introduced into the processing chamber, and a control unit configured to control powers of the microwaves introduced into the processing chamber through the microwave introduction ports from the microwave introduction mechanism based on the electric field measured by the electric field sensors. | 02-06-2014 |
20140038430 | METHOD FOR PROCESSING OBJECT - In a method for processing an object by heating the object, microwaves are irradiated to the object. In the microwave irradiation, the object is forcedly cooled. | 02-06-2014 |
20140291318 | MICROWAVE HEATING APPARATUS - A microwave heating apparatus is provided to perform heat treatment on a substrate to be processed by irradiating a microwave to the substrate in a processing chamber. The microwave heating apparatus includes a supporting table configured to support the substrate in the processing chamber, a microwave introducing unit configured to introduce the microwave into the processing chamber, a coolant channel formed in the supporting table, and a coolant supply source configured to supply a coolant to the coolant channel. At least a surface of the supporting table which supports the substrate is made of a material in which a product of a relative dielectric constant and a dielectric loss angle is smaller than 0.005, and the coolant supplied from the coolant supply source is liquid having no electrical polarity. | 10-02-2014 |