Patent application number | Description | Published |
20150309256 | 3-DIMENSITIONAL OPTICAL INTERCONNECTION STRUCTURE USING BRANCHED WAVEGUIDES - A waveguide of a 3D interconnection structure and an optical data bus system of a 3D interconnection structure using the same are provided. The waveguide includes a main waveguide which is formed in a predetermined direction and at least one branch waveguide which connects to the main waveguide to form a predetermined angle, wherein the at least one branch waveguide branches an optical signal, which is propagated in the main waveguide, at a predetermined rate. | 10-29-2015 |
20150311177 | CHIP PACKAGING METHOD AND CHIP PACKAGE USING HYDROPHOBIC SURFACE - A chip packaging method using a hydrophobic surface includes forming superhydrophobic surfaces forming hydrophilic surfaces on predetermined positions of the superhydrophobic surfaces formed on the one of a first chip or the first board and the one of a second chip or a second board, respectively, generating liquid metal balls on the hydrophilic surfaces formed on the one of the first chip or the first board and the one of the second chip or the second board, respectively, and packaging the one of the first chip or the first board and the one of the second chip or the second board by combing the liquid metal ball of the one of the first chip or the first board and the liquid metal ball of the one of the second chip or the second board with each other. | 10-29-2015 |
20150355410 | OPTICAL GRATING COUPLER HAVING WAVELENGTH TUNABLE STRUCTURE - A structure of an optical grating coupler for tuning the center wavelength of signals which are propagated to a waveguide by changing the effective refractive index of the optical grating coupler is provided. The optical grating coupler includes a region for changing the effective refractive index of the optical grating coupler, which is included in the inside or outside of the optical grating coupler. The region receives a signal for changing the effective refractive index of the optical grating coupler. | 12-10-2015 |
Patent application number | Description | Published |
20110311869 | POSITIVE ELECTRODE ACTIVE MATERIAL WITH HIGH CAPACITY AND LITHIUM SECONDARY BATTERY INCLUDING THE SAME - A high capacity lithium secondary battery includes a lithium manganese oxide having a layered structure exhibiting a great irreversible capacity in the event of overcharging at a high voltage and a spinel-based lithium manganese oxide. Because it is activated at a high voltage of 4.45 V or higher based on a positive electrode potential, additional lithium for utilizing a 3V range of the spinel-based lithium manganese oxide can be provided and an even profile in the entire SOC area can be obtained. Because the lithium secondary battery includes the mixed positive electrode active material including the spinel-based lithium manganese oxide and the lithium manganese oxide having a layered structure, and is charged at a high voltage, its stability can be improved. Also, the high capacity battery having a large available SOC area and improved stability without causing an output shortage due to a rapid voltage drop in the SOC area can be implemented. | 12-22-2011 |
20110311872 | POSITIVE-ELECTRODE ACTIVE MATERIAL FOR ELEVATION OF OUTPUT AND LITHIUM SECONDARY BATTERY INCLUDING THE SAME - A lithium secondary battery having improved output characteristics is provided. A high voltage mixed positive electrode active material has an even profile without causing a rapid voltage drop over the entire SOC area by improving a rapid voltage drop phenomenon occurring due to the difference between the operation voltages of mixed lithium transition metal oxides, and improves output characteristics at a low voltage. The lithium secondary battery includes the mixed positive electrode active material. In particular, the lithium secondary battery can sufficiently satisfy the required conditions such as output characteristics, capacity, stability, and the like, when it is used as a power source of a midsize or large device such as an electric vehicle. | 12-22-2011 |
20150044753 | Expression Vector Comprising a Polynucleotide Encoding a Modified Glutamine Synthetase and a Method for Preparing a Target Protein Employing the Same - The present invention relates to a vector comprising a polynucleotide encoding a modified glutamine synthetase (GS), and a method for preparing a target protein employing the same. More particularly, the present invention relates to a modified GS having an increased sensitivity to a glutamine synthetase (GS) inhibitor, a polynucleotide encoding the modified GS, a vector comprising the polynucleotide, a transformant comprising the vector, and a method for preparing a target protein using the transformant. | 02-12-2015 |
20150079436 | POUCH TYPE SECONDARY BATTERY HAVING SAFETY VENT - The present invention relates to a pouch type secondary battery. The pouch type secondary battery includes an electrode assembly, and a pouch type case in which the electrode assembly is accommodated, the pouch type case comprising a sealing part disposed on an edge thereof. The sealing part includes an inner sealing part forming a closed curve to protect the electrode assembly against the outside, and an outer sealing part defining a gas flow path between the inner and outer sealing parts to surround a peripheral portion of the inner sealing part, the outer sealing part having a safety vent. | 03-19-2015 |
Patent application number | Description | Published |
20100330430 | LITHIUM SECONDARY BATTERY WITH HIGH ENERGY DENSITY - The present invention relates to electrodes for a lithium secondary battery with a high energy density and a secondary battery with a high energy density using the same. A negative electrode includes a material which can be alloyed with lithium alloy. A positive electrode is made of a transition metal oxide which can reversibly intercalate or deintercalate lithium. Here, the entire reversible lithium storage capacity of the positive electrode is greater than the capacity of lithium dischargeable from the positive electrode. Further, the present invention relates to electrodes for a lithium secondary battery in which metal lithium is coated on a negative electrode, a positive electrode, or both, a method of manufacturing the electrodes, and a lithium secondary battery including the electrodes. The lithium secondary battery of the present invention is excellent in safety because metal lithium does not remain after being activated and excellent in a capacity per unit weight. | 12-30-2010 |
20120070742 | LITHIUM SECONDARY BATTERY WITH HIGH ENERGY DENSITY - The present invention relates to electrodes for a lithium secondary battery with a high energy density and a secondary battery with a high energy density using the same. A negative electrode includes a material which can be alloyed with lithium alloy. A positive electrode is made of a transition metal oxide which can reversibly intercalate or deintercalate lithium. Here, the entire reversible lithium storage capacity of the positive electrode is greater than the capacity of lithium dischargeable from the positive electrode. | 03-22-2012 |
20120288761 | ELECTRODE ADDITIVES COATED WITH ELECTRO CONDUCTIVE MATERIAL AND LITHIUM SECONDARY COMPRISING THE SAME - Provided are an electrode additive coated with a coating material made of electrically conductive materials such as metal hydroxides, metal oxides or metal carbonates, and an electrode and a lithium secondary battery comprising the same. The electrode additive in accordance with the present invention can improve high temperature storage characteristics of the battery, without deterioration of performance thereof. | 11-15-2012 |
Patent application number | Description | Published |
20130307026 | HIGH ELECTRON MOBILITY TRANSISTORS AND METHODS OF MANUFACTURING THE SAME - According to example embodiments, High electron mobility transistors (HEMTs) may include a discontinuation region in a channel region. The discontinuation region may include a plurality of 2DEG unit regions that are spaced apart from one another. The discontinuation region may be formed at an interface between two semiconductor layers or adjacent to the interface. The discontinuation region may be formed by an uneven structure or a plurality of recess regions or a plurality of ion implantation regions. The plurality of 2DEG unit regions may have a nanoscale structure. The plurality of 2DEG unit regions may be formed in a dot pattern, a stripe pattern, or a staggered pattern. | 11-21-2013 |
20140021511 | HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A high electron mobility transistor (HEMT) according to example embodiments includes a channel layer, a channel supply layer on the channel layer, a source electrode and a drain electrode on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a Schottky electrode forming a Schottky contact with the channel supply layer. An upper surface of the channel supply layer may define a Schottky electrode accommodation unit. At least part of the Schottky electrode may be in the Schottky electrode accommodation unit. The Schottky electrode is electrically connected to the source electrode. | 01-23-2014 |
20140042449 | HIGH ELECTRON MOBILITY TRANSISTOR - According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer that induces a two-dimensional electron gas (2DEG) in a channel layer, a source electrode and a drain electrode that are at sides of the channel supply layer, a depletion-forming layer that is on the channel supply layer and contacts the source electrode, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulating layer. The depletion-forming layer forms a depletion region in the 2DEG. | 02-13-2014 |
20140061725 | HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - According to example embodiments, a higher electron mobility transistor (HEMT) may include a first channel layer, a second channel layer on the first channel layer, a channel supply on the second channel layer, a drain electrode spaced apart from the first channel layer, a source electrode contacting the first channel layer and contacting at least one of the second channel layer and the channel supply layer, and a gate electrode unit between the source electrode and the drain electrode. The gate electrode unit may have a normally-off structure. The first and second channel layer form a PN junction with each other. The drain electrode contacts at least one of the second channel layer and the channel supply layer. | 03-06-2014 |
20140091363 | NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTOR - According to example embodiments, a normally-off high electron mobility transistor (HEMT) includes: a channel layer having a first nitride semiconductor, a channel supply layer on the channel layer, a source electrode and a drain electrode at sides of the channel supply layer, a depletion-forming layer on the channel supply layer, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulation layer. The channel supply layer includes a second nitride semiconductor and is configured to induce a two-dimensional electron gas (2DEG) in the channel layer. The depletion-forming layer is configured has at least two thicknesses and is configured to form a depletion region in at least a partial region of the 2DEG. The gate electrode contacts the depletion-forming layer. | 04-03-2014 |
20140097470 | HIGH-ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - According to example embodiments, a HEMT includes a channel supply layer on a channel layer, a p-type semiconductor structure on the channel supply layer, a gate electrode on the p-type semiconductor structure, and source and drain electrodes spaced apart from two sides of the gate electrode respectively. The channel supply layer may have a higher energy bandgap than the channel layer. The p-type semiconductor structure may have an energy bandgap that is different than the channel supply layer. The p-type semiconductor structure may include a hole injection layer (HIL) on the channel supply layer and be configured to inject holes into at least one of the channel layer and the channel supply in an on state. The p-type semiconductor structure may include a depletion forming layer on part of the HIL. The depletion forming layer may have a dopant concentration that is different than the dopant concentration of the HIL. | 04-10-2014 |
20140151747 | HIGH ELECTRON MOBILITY TRANSISTOR INCLUDING PLURALITY OF GATE ELECTRODES - According to example embodiments, a high electron mobility transistor includes: a channel layer including a first semiconductor material; a channel supply layer on the channel layer and configured to generate a 2-dimensional electron gas (2DEG) in the channel layer, the channel supply layer including a second semiconductor material; source and drain electrodes spaced apart from each other on the channel layer, and an upper surface of the channel supply layer defining a gate electrode receiving part; a first gate electrode; and at least one second gate electrode spaced apart from the first gate electrode and in the gate electrode receiving part. The first gate electrode may be in the gate electrode receiving part and between the source electrode and the drain electrode. The at least one second gate electrode may be between the source electrode and the first gate electrode. | 06-05-2014 |
20140240026 | METHOD AND APPARATUS FOR CONTROLLING A GATE VOLTAGE IN HIGH ELECTRON MOBILITY TRANSISTOR - According to example embodiments, a method for controlling a gate voltage applied to a gate electrode of a high electron mobility transistor (HEMT) may include measuring a voltage between a drain electrode and a source electrode of the HEMT, and adjusting a level of the gate voltage applied to the gate electrode of the HEMT according to the measured voltage. The level of the gate electrode may be adjusted if the voltage between the drain electrode and the source electrode is different than a set value. | 08-28-2014 |
20140327043 | HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - Provided are a high electron mobility transistor (HEMT) and a method of manufacturing the HEMT. The HEMT includes: a channel layer comprising a first semiconductor material; a channel supply layer comprising a second semiconductor material and generating two-dimensional electron gas (2DEG) in the channel layer; a source electrode and a drain electrode separated from each other in the channel supply layer; at least one depletion forming unit that is formed on the channel supply layer and forms a depletion region in the 2DEG; at least one gate electrode that is formed on the at least one depletion forming unit; at least one bridge that connects the at least one depletion forming unit and the source electrode; and a contact portion that extends from the at least one bridge under the source electrode. | 11-06-2014 |
Patent application number | Description | Published |
20090277124 | APPARATUS FOR CONNECTING A PRECAST DECK SLAB WITH A BEAM ON A BRIDGE AND METHOD FOR CONNECTING THE SLAB WITH THE BEAM USING THE SAME - Provided are a connection apparatus and a connection method capable of rapidly and fixing a pre-cast deck slab with a beam. The connection apparatus includes a main body buried in the pre-cast deck slab and having a hollow part formed in an axial direction thereof! a plurality of support portions integrally formed with an outer surface of the main body, each of which has a body having a certain length and a hook integrally formed with an end of the body; a bolt having a bolt body inserted into the hollow part of the main body and a fixing hole of the beam, and a head integrally formed with an upper end of the bolt body! and a nut threadedly engaged with the bolt body of the bolt. | 11-12-2009 |
20130122122 | METHOD FOR PREPARING NOVEL PROCESSED GINSENG OR AN EXTRACT THEREOF, THE USUALLY MINUTE GINSENOSIDE CONTENT OF WHICH IS INCREASED - The present invention relates to a method for preparing a processed ginseng or processed ginseng extract. Specifically, the invention relates to a method for preparing a processed ginseng or processed ginseng extract having increased ginsenoside contents. More specifically, the invention relates to a method of preparing a novel processed ginseng or processed ginseng extract having increased ginsenoside contents by preparing saponinase, fermenting ginseng or red ginseng with the prepared saponinase and hydrolyzing the fermented ginseng or red ginseng with an organic acid and to an anticancer supplement composition or pharmaceutical composition comprising the processed ginseng or processed ginseng extract prepared thereby. | 05-16-2013 |
20130310454 | PHARMACEUTICAL COMPOSITION COMPRISING EXTRACT OF LONICERA JAPONICA FOR PREVENTION AND TREATMENT OF GASTROESOPHAGEAL REFLUX DISEASE - Disclosed is a composition for treating or preventing gastroesophageal reflux disease, which includes an organic solvent extract of Lonicerae Flos Thunberg. A fraction of the disclosed extract can be very effectively used for treating, preventing, or improving gastroesophageal reflux disease without side effects. | 11-21-2013 |
20140173495 | Bookmark Gesture Recognition - Apparatus for displaying an electronic book comprising a touch screen and a processor. The touch screen displays a selected page of an electronic book, and has a touch input device configured to generate signals in response to a touch input. The processor comprises a touch acquisition module that generates touch position information, a gesture recognition module that determines if a touch input is a bookmark gesture in dependence of whether the touch position information is within a bookmark area, and a bookmark processing module that generates a bookmark for the selected page when a bookmark gesture is recognized by the gesture recognition module. | 06-19-2014 |