Patent application number | Description | Published |
20090322417 | SEMICONDUCTOR COMPONENT ARRANGEMENT HAVING A COMPONENT WITH A DRIFT ZONE AND A DRIFT CONTROL ZONE - Disclosed is a semiconductor including a component having a drift zone and a drift control zone. A first connection zone is adjacent to the drift zone and is doped more highly than the drift zone. A drift control zone is arranged adjacent to the drift zone and is coupled to the first connection zone. A drift control zone is dielectric arranged between the drift zone and the drift control zone. At least one rectifier element is arranged between the first connection zone and the drift control zone. A charging circuit is connected to the drift control zone. | 12-31-2009 |
20100058876 | SEMICONDUCTOR DEVICE INCLUDING A PRESSURE SENSOR - A semiconductor device includes a first cavity within a semiconductor substrate and a second cavity within the semiconductor substrate. The second cavity is open to an atmosphere and defines a first lamella between the first cavity and the second cavity. The semiconductor device includes a first sense element configured for sensing a pressure on the first lamella. | 03-11-2010 |
20100186511 | ACCELERATION SENSOR - A semiconductor device includes a semiconductor substrate and a semiconductor mass element configured to move in response to an applied acceleration. The mass element is defined by trenches etched into the semiconductor substrate and a cavity below the mass element. The semiconductor device includes a sensing element configured to sense movement of the mass element and a complementary metal-oxide-semiconductor (CMOS) circuit formed on the substrate. | 07-29-2010 |
20100218613 | SEMICONDUCTOR DEVICE INCLUDING A CAVITY - A semiconductor device includes a substrate including a cavity and a first material layer over at least a portion of sidewalls of the cavity. The semiconductor device includes an oxide layer over the substrate and at least a portion of the sidewalls of the cavity such that the oxide layer lifts off a top portion of the first material layer toward a center of the cavity. | 09-02-2010 |
20110068420 | Semiconductor Structure with Lamella Defined by Singulation Trench - A method for fabricating a semiconductor structure includes etching a first opening into a substrate; etching a chip singulation trench into the substrate to define a lamella between the first opening and the chip singulation trench; fabricating a sense element for sensing a deflection of the lamella; and singulating the semiconductor structure at the chip singulation trench. | 03-24-2011 |
20110163395 | Pressure Sensor and Method - A method for providing a pressure sensor substrate comprises creating a first cavity that extends inside the substrate in a first direction perpendicular to a main surface of the substrate, and that extends inside the substrate, in a second direction perpendicular to the first direction, into a first venting area of the substrate; creating a second cavity that extends in the first direction inside the substrate, that extends in parallel to the first cavity in the second direction, and that does not extend into the first venting area; and opening the first cavity in the first venting area. | 07-07-2011 |
20120068277 | Semiconductor Manufacturing and Semiconductor Device with semiconductor structure - Embodiments related to semiconductor manufacturing and semiconductor devices with semiconductor structure are described and depicted. | 03-22-2012 |
20120068304 | SEMICONDUCTOR STRUCTURE AND METHOD FOR MAKING SAME - One or more embodiments relate to a method of forming a semiconductor structure, comprising: providing a semiconductor substrate; forming an opening within the substrate; forming a conductive layer within the opening; and forming a semiconductor layer over the conductive layer. | 03-22-2012 |
20120161254 | Method of Providing a Semiconductor Structure with Forming A Sacrificial Structure - A method for providing a semiconductor structure includes forming a sacrificial structure by etching a plurality of trenches from a first main surface of a substrate. The method further includes covering the plurality of trenches at the first main surface with a cover material to define cavities within the substrate, removing a part of the substrate from a second main surface opposite to the first main surface to a depth at which the plurality of trenches are present, and etching away the sacrificial structure from the second main surface of the substrate. | 06-28-2012 |
20120267694 | INTEGRATED CIRCUIT ARRANGEMENTS - An integrated circuit arrangement is provided, including a transistor including a gate region; and a wavelength conversion element, wherein the wavelength conversion element may include the same material or same materials as the gate region of the transistor. | 10-25-2012 |
20130001712 | ACCELERATION SENSOR - A semiconductor device includes a semiconductor substrate and a semiconductor mass element configured to move in response to an applied acceleration. The mass element is defined by trenches etched into the semiconductor substrate and a cavity below the mass element. The semiconductor device includes a sensing element configured to sense movement of the mass element. | 01-03-2013 |
20130062502 | PHOTODETECTOR AND METHOD FOR MANUFACTURING THE SAME - A photodetector includes a substrate and an insulating arrangement formed in the substrate. The insulating arrangement electrically insulates a confined region of the substrate. The confined region is configured to generate free charge carriers in response to an irradiation. The photodetector further includes a read-out electrode arrangement configured to provide a photocurrent formed by at least a portion of the free charge carriers that are generated in response to the irradiation. The photodetector also includes a biasing electrode arrangement that is electrically insulated against the confined region by means of the insulating arrangement. The biasing electrode arrangement is configured to cause an influence on a spatial charge carrier distribution within the confined region so that fewer of the free charge carriers recombine at boundaries of the confined region compared to an unbiased state. | 03-14-2013 |
20130062604 | Photodetector with Controllable Spectral Response - A photodetector includes a semiconductor substrate having an irradiation zone configured to generate charge carriers having opposite charge carrier types in response to an irradiation of the semiconductor substrate. The photodetector further includes an inversion zone generator configured to operate in at least two operating states to generate different inversion zones within the substrate, wherein a first inversion zone generated in a first operating state differs from a second inversion zone generated in a second operating state, and wherein the first inversion zone and the second inversion zone have different extensions in the semiconductor substrate. A corresponding method for manufacturing a photodetector and a method for determining a spectral characteristic of an irradiation are also described. | 03-14-2013 |
20130085710 | METHOD FOR DETECTING WHEEL ROTATION USING A ONE-DIMENSIONAL ACCELERATION SENSOR - Embodiments relate to TPMS utilizing a single-axis acceleration sensor for measuring the direction of rotation of the tires in a tire localization methodology. In an embodiment, the known axis position of the acceleration sensor in the tires allows for the assessment by an integrated circuit in order to determine the left or right positioning of a tire, as well as the magnitude of acceleration or deceleration. Because of the dual components of the measured acceleration signal of first, the directional acceleration of the vehicle and second, the oscillating modulation due to gravity, the generated waveform is known to have differences between the left and right tire signals of an accelerating and decelerating vehicle. The impact of the oscillating modulation on the directional acceleration of the vehicle can be utilized to identify tire rotation direction, and thus the wheels localized therefrom, as well as the magnitude of acceleration and deceleration. | 04-04-2013 |
20130108213 | SILICON OPTICAL SWITCH DEVICES | 05-02-2013 |
20130108214 | SILICON OPTICAL LINE MULTIPLEXER DEVICES | 05-02-2013 |
20130134530 | Method of fabricating isolated semiconductor structures - Embodiments related to semiconductor manufacturing and semiconductor devices with semiconductor structure are described and depicted. | 05-30-2013 |
20130162330 | PHOTO CELL DEVICES FOR PHASE-SENSITIVE DETECTION OF LIGHT SIGNALS - Embodiments relate to photo cell devices. In one embodiment, a trench-based photo cells provides very fast capture of photo-generated charge carriers, particularly when compared with conventional approaches, as the trenches of the photo cells create depleted regions deep within the bulk of the substrate that avoid the time-consuming diffusion of carriers. | 06-27-2013 |
20130199301 | Vertical Pressure Sensitive Structure - Embodiments related to pressure sensitive structures are described and depicted. | 08-08-2013 |
20130285187 | PHOTO CELL DEVICES AND METHODS FOR SPECTROMETRIC APPLICATIONS - Embodiments relate to photo cell devices. In an embodiment, a photo cell device includes an array of transmission layers having different optical thicknesses and with photo diodes underneath. The transmission layers can include two different materials, such as a nitride and an oxide, that cover each diode with a different proportional area density in a damascene-like manner. Embodiments provide advantages over conventional devices, including that they can be integrated into a standard CMOS process and therefore simpler and less expensive to produce. | 10-31-2013 |
20130328143 | Semiconductor Manufacturing and Semiconductor Device with semiconductor structure - Embodiments related to semiconductor manufacturing and semiconductor devices with semiconductor structure are described and depicted. | 12-12-2013 |
20130334624 | METHOD OF PROVIDING A SEMICONDUCTOR STRUCTURE WITH FORMING A SACRIFICIAL STRUCTURE - A method for providing a semiconductor structure includes forming a sacrificial structure by etching a plurality of trenches from a first main surface of a substrate. The method further includes covering the plurality of trenches at the first main surface with a cover material to define cavities within the substrate, removing a part of the substrate from a second main surface opposite to the first main surface to a depth at which the plurality of trenches are present, and etching away the sacrificial structure from the second main surface of the substrate. | 12-19-2013 |
20140073110 | METHOD FOR FABRICATING A TRENCH STRUCTURE, AND A SEMICONDUCTOR ARRANGEMENT COMPRISING A TRENCH STRUCTURE - A semiconductor device, in which a first trench section is produced proceeding from a surface of a semiconductor body into the semiconductor body. A semiconductor layer is produced above the surface and above the first trench section. A further trench section is produced in the semiconductor layer in such a way that the first trench section and the further trench section form a continuous trench structure. | 03-13-2014 |
20140097521 | Silicon on Nothing Devices and Methods of Formation Thereof - In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a first cavity within a substrate. The first cavity is disposed under a portion of the substrate. The method further includes forming a first pillar within the first cavity to support the portion of the substrate. | 04-10-2014 |
20140110805 | SILICON LIGHT TRAP DEVICES, SYSTEMS AND METHODS - Embodiments relate to buried structures for silicon devices which can alter light paths and thereby form light traps. Embodiments of the lights traps can couple more light to a photosensitive surface of the device, rather than reflecting the light or absorbing it more deeply within the device, which can increase efficiency, improve device timing and provide other advantages appreciated by those skilled in the art. | 04-24-2014 |
20140145281 | CONTROLLING OF PHOTO-GENERATED CHARGE CARRIERS - Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region | 05-29-2014 |
20140175571 | METHOD FOR MANUFACTURING A MICROMECHANICAL SYSTEM COMPRISING A REMOVAL OF SACRIFICIAL MATERIAL THROUGH A HOLE IN A MARGIN REGION - A method for manufacturing a micromechanical system includes creating a sacrificial layer at a substrate surface. A structural material is deposited at a sacrificial layer surface and at a support structure for later supporting the structural material. At least one hole is created in the structural material extending from an exposed surface of the structural material to the surface of the sacrificial layer. The at least one hole leads to a margin region of the sacrificial layer. The sacrificial layer is removed using a removal process through the at least one hole, to obtain a cavity between the surface of the substrate and the structural material. The method also includes filling the at least one hole and a portion of the cavity beneath the at least one hole close to the cavity. A corresponding micromechanical system and a microelectromechanical transducer are also described. | 06-26-2014 |
20140266484 | MICROELECTROMECHANICAL RESONATORS - Embodiments relate to MEMS resonator structures and methods that enable application of a maximum available on-chip voltage. In an embodiment, a MEMS resonator comprises a connection between a ground potential and the gap electrode of the resonator. Embodiments also relate to manufacturing systems and methods that are less complex and enable production of MEMS resonators of reduced dimensions. | 09-18-2014 |
20150021734 | SEMICONDUCTOR DEVICE, A MICRO-ELECTRO-MECHANICAL RESONATOR AND A METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A semiconductor device includes a silicon substrate layer with a decoupling region. The decoupling region of the silicon substrate layer comprises an array of lamellas laterally spaced apart from each other by cavities. Each lamella of the array of lamellas comprises at least 20% silicon dioxide. | 01-22-2015 |
20150079787 | METHOD AND STRUCTURE FOR CREATING CAVITIES WITH EXTREME ASPECT RATIOS - Embodiments relate to structures, systems and methods for more efficiently and effectively etching sacrificial and other layers in substrates and other structures. In embodiments, a substrate in which a sacrificial layer is to be removed to, e.g., form a cavity comprises an etch dispersion system comprising a trench, channel or other structure in which etch gas or another suitable gas, fluid or substance can flow to penetrate the substrate and remove the sacrificial layer. The trench, channel or other structure can be implemented along with openings or other apertures formed in the substrate, such as proximate one or more edges of the substrate, to even more quickly disperse etch gas or some other substance within the substrate. | 03-19-2015 |