Patent application number | Description | Published |
20080199728 | DEEP RED PHOSPHOR AND METHOD OF MANUFACTURING THE SAME - Disclosed is a deep red phosphor (600 nm to 670 nm) of Mn activity having a chemical formula of (k-x)MgOxAF | 08-21-2008 |
20090050848 | METAL HYDROXY CARBONATE NANOPARTICLE COATED PHOSPHOR AND METHOD FOR PREPARING THE SAME - Disclosed herein are a metal hydroxy carbonate nanoparticle-coated phosphor and a preparation method thereof. The phosphor coated with metal hydroxy carbonate nanoparticles exhibit improved thermal stability and an increased luminance lifespan, when applied to display devices, e.g., PDPs and lamps. | 02-26-2009 |
20090051269 | (OXY) NITRIDE PHOSPHOR, WHITE LIGHT-EMITTING DEVICE INCLUDING THE (OXY) NITRIDE PHOSPHOR, METHOD OF PREPARING PHOSPHOR, AND NITRIDE PHOSPHOR PREPARED BY THE METHOD - Provided is an (oxy)nitride phosphor, which is a compound represented by Formula 1 below: | 02-26-2009 |
20090075082 | METHOD FOR PREPARING NANOPHOSPHOR FROM METAL HYDROXY CARBONATE AND NANOPHOSPHOR PREPARED BY THE METHOD - Disclosed herein is a method for preparing a nanophosphor from a metal hydroxy carbonate and a nanophosphor prepared by the method. The method is capable of mass-production of a uniform particle-size nanophosphor with superior dispersibility and enables reduction in preparation costs. The nanophosphor prepared by the disclosed method exhibits high luminescence efficiency. | 03-19-2009 |
20090114880 | PHOSPHATE NANO PHOSPHOR AND METHOD OF PREPARING THE SAME - Provided is a phosphate nano phosphor with a mean particle diameter of 100 to 3000 nm. Also provided is a method of preparing a nano phosphor, the method comprising: dissolving two or more species of metal precursor compounds in water, and then adjusting the pH to prepare an aqueous solution of pH 4-10; coprecipitating the aqueous solution by mixing with a phosphate precursor aqueous solution with the pH adjusted to 7-12; and redispersing the particles obtained from the coprecipitation in water or polyol solvent, and then heat treating the particles. The phosphate nano phosphor according to the present invention has superior light emission efficiency compared with conventional nano phosphors. | 05-07-2009 |
20090173381 | GEL TYPE ELECTROLYTE FOR DYE SENSITIZED SOLAR CELL, METHOD OF PREPARING THE SAME, AND SOLAR CELL INCLUDING THE GEL TYPE ELECTROLYTE - A gel type electrolyte for a dye-sensitized solar cell including: phosphor particles or phosphor particles with metal oxide particles; a redox couple; and an organic solvent, a method of preparing the same, and a solar cell including the gel type electrolyte, which provide for a dye-sensitized solar cell that has long-term stability, excellent photoavailability, and high ionic conductivity. | 07-09-2009 |
20090189122 | METHOD FOR PREPARING OXIDE NANO PHOSPHORS - Disclosed is a method for preparing an oxide nano phosphor. A metal precursor solution is prepared. The metal precursor solution is impregnated into a porous polymer material. A heat treatment is performed on the porous polymer material having the metal precursor solution impregnated therein. The heat treatment is performed by heating the porous polymer material having the metal precursor impregnated therein up to a temperature of higher than 500° C. solution at a temperature elevating rate of higher than 100° C. per minute. | 07-30-2009 |
20110001154 | Method of preparing an oxynitride phosphor, oxynitride phosphor obtained using the method, and a white light-emitting device including the oxynitride phosphor - A method of preparing oxynitride phosphor represented by Formula 1: | 01-06-2011 |
20110098073 | METHOD AND APPARATUS FOR RECOVERING ESTIMATED VELOCITY OF MOBILE STATION IN COMMUNICATION SYSTEM - A method and apparatus for recovering an estimated velocity of a mobile station in a communication system are provided. The apparatus includes a searcher for determining a Doppler shift value representing the estimated velocity of the mobile station by using a channel impulse response of a preamble signal received at a regular interval of time, a detector for determining a reference Doppler value for compensating the Doppler shift value by using correlation ratios between channel values of symbols to which data for the mobile station are allocated according to subcarriers in a data allocation field of a frame including the preamble signal, and a compensator for determining a compensated Doppler shift value by using the reference Doppler value to compensate the Doppler shift value for a folding value, wherein the folding value represents a difference between the estimated velocity and a true velocity of the mobile station. | 04-28-2011 |
20110109221 | OXYNITRIDE PHOSPHOR, METHOD OF PREPARING OXYNITRIDE PHOSPHOR, AND WHITE LIGHT EMITTING DEVICE INCLUDING THE OXYNITRIDE PHOSPHOR - An oxynitride phosphor including: a compound represented by Formula 1: | 05-12-2011 |
20110169398 | NITRIDE PHOSPHOR, METHOD OF PREPARING THE SAME, AND WHITE LIGHT-EMITTING DEVICE USING THE SAME - A nitride phosphor represented by Formula 1: | 07-14-2011 |
20120068591 | GREEN PHOSPHORS, METHODS OF PREPARING THE GREEN PHOSPHORS, AND WHITE LIGHT-EMITTING DEVICES INCLUDING THE GREEN PHOSPHORS - A green phosphor, has an orthorhombic structure of a Pnma space group and the Formula 1: | 03-22-2012 |
20120142159 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - Methods for fabricating a semiconductor device are provided wherein, in an embodiment, the method includes the steps of forming a gate electrode on a semiconductor substrate, forming a trench by recessing the semiconductor substrate in the vicinity of the gate electrode, doping an anti-diffusion ion into a portion of the semiconductor substrate in the trench, and growing an impurity-doped epitaxial layer on the semiconductor substrate doped with the anti-diffusion ion. | 06-07-2012 |
20120176026 | (OXY) NITRIDE PHOSPHOR, WHITE LIGHT-EMITTING DEVICE INCLUDING THE (OXY) NITRIDE PHOSPHOR, METHOD OF PREPARING PHOSPHOR, AND NITRIDE PHOSPHOR PREPARED BY THE METHOD - Provided is an (oxy)nitride phosphor, which is a compound represented by Formula 1 below: | 07-12-2012 |
20120322648 | VISIBLE LIGHT SENSITIVE PHOTOCATALYST, METHOD OF PRODUCING THE SAME, AND ELECTROCHEMICAL WATER DECOMPOSITION CELL, WATER DECOMPOSITION SYSTEM, AND ORGANIC MATERIAL DECOMPOSITION SYSTEM EACH INCLUDING THE SAME - A visible light sensitive photocatalyst including a compound represented by Formula 1: | 12-20-2012 |
20130115760 | METHOD OF FORMING A THIN LAYER STRUCTURE - A thin layer structure includes a substrate, a blocking pattern that exposes part of an upper surface of the substrate, and a single crystalline semiconductor layer on the part of the upper surface of the substrate exposed by the pattern and in which all outer surfaces of the single crystalline semiconductor layer have a <100> crystallographic orientation. The thin layer structure is formed by an SEG process in which the temperature is controlled to prevent migration of atoms in directions towards the central portion of the upper surface of the substrate. Thus, sidewall surfaces of the layer will not be constituted by facets. | 05-09-2013 |
20140065793 | METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE - An alignment mark is formed on a substrate including a first region and a second region. The alignment mark is formed in the second region. An etch target layer including a crystalline material is formed on the alignment mark and the substrate. The etch target layer in the first region is partially amorphized. The amorphized etch target layer is etched to form an opening. | 03-06-2014 |
20140251956 | ETCHING APPARATUS AND ETCHING METHOD - An apparatus for an etching process includes a chamber, a plasma generator disposed in the chamber, a stacked structure disposed in the chamber to support a substrate thereon and including an electrode plate and an insulation coating layer on the electrode plate, electrode rods inserted into through holes of the stacked structure to penetrate through the stacked structure, directly contacting the substrate and spaced apart from sidewalls of the through holes of the stacked structure, at least one DC pulse generator generating a DC pulse to the electrode plate and the electrode rods, first connection lines connecting the DC pulse generator to the electrode rods, and at least one second connection line connecting the DC pulse generator to a lower portion of the electrode plate. | 09-11-2014 |
20140322832 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - According to example embodiments of inventive concepts, a method of fabricating a semiconductor device includes: forming a preliminary stack structure, the preliminary stack structure defining a through hole; forming a protection layer and a dielectric layer in the through hole; forming a channel pattern, a gapfill pattern, and a contact pattern in the through hole; forming an offset oxide on the preliminary stack structure; measuring thickness data of the offset oxide; and scanning the offset oxide using a reactive gas cluster ion beam. The scanning the offset oxide includes setting a scan speed based on the measured thickness data of the offset oxide, and forming a gas cluster. | 10-30-2014 |
20140357062 | FABRICATING METHOD OF SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device, the method including forming a trench on a substrate; forming an insulating layer pattern within the trench; depositing an amorphous material on the substrate and the insulating layer pattern; planarizing the amorphous material; removing a portion of the amorphous material, the removed portion of the amorphous material being on an area of the substrate where the trench has been formed; crystallizing remaining portions of the amorphous material into a single crystal material; and planarizing the single crystal material. | 12-04-2014 |
20140357071 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING DOPED LAYER - A method of manufacturing a semiconductor device having a doped layer may be provided. The method includes providing a substrate having a first region and a second region, forming a gate dielectric layer on the substrate, forming a first gate electrode layer on the gate dielectric layer, forming a first doped layer on the first gate electrode layer, forming a first capping layer on the first doped layer, forming a mask pattern on the first capping layer in the first region, the mask pattern exposing the first capping layer in the second region, removing the first capping layer and the first doped layer in the second region, removing the mask pattern, and forming a second doped layer on the first capping layer in the first region and the first gate electrode layer in the second region. | 12-04-2014 |
20140377926 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A fin type active pattern is formed on a substrate. The fin type active pattern projects from the substrate. A diffusion film is formed on the fin type active pattern. The diffusion film includes an impurity. The impurity is diffused into a lower portion of the fin type active pattern to form a punch-through stopper diffusion layer. | 12-25-2014 |