Atsushi Sasaki
Atsushi Sasaki, Tsukuba-Shi JP
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20090318690 | Benzisoxazole Compound - Disclosed is a compound represented by the general formula (I) or a salt thereof: | 12-24-2009 |
20090325930 | SELECTIVE ESTROGEN RECEPTOR MODULATOR - The present invention provides a compound represented by the following formula (I); | 12-31-2009 |
20120004315 | Selective Estrogen Receptor Modulator - The present invention provides a compound represented by the following formula (I); | 01-05-2012 |
Atsushi Sasaki, Futtsu-Shi JP
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20090222487 | PLANT INFORMATION MANAGEMENT SYSTEM AND PLANT INFORMATION MANAGEMENT METHOD - A plant information management system comprising: a seed identification information input device; an individual plant identification information retrieval device; an individual plant identification information input device; a new seed identification information retrieval device; a storage location information retrieval device; a project database management device; a seed database management device; a project database memory device; and a seed database memory device. | 09-03-2009 |
Atsushi Sasaki, Matsumoto-Shi JP
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20090195842 | IMAGE READING DEVICE AND IMAGE READING METHOD USED THEREIN - An image reading device, which has an image sensor having a plurality of sensor chips therein and being capable of outputting data in parallel through a plurality of output channels, includes an image reading section configured to perform reading of images in either of two outputting modes, one being a parallel outputting mode in which start signals are simultaneously inputted to the plurality of sensor chips so that pieces of data in the plurality of the sensor chips are outputted in parallel through the plurality of output channels, respectively, the other one being an interval outputting mode in which start signals are sequentially inputted to the plurality of sensor chips at intervals of time between any two successive inputs of the start signals, respectively, so that respective pieces of data in the plurality of sensor chips are sequentially outputted through any one of the plurality of output channels, and a mode selection section configured to select either of the two outputting modes in accordance with a set resolution. | 08-06-2009 |
Atsushi Sasaki, Ageo-Shi JP
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20120199827 | THIN-FILM TRANSISTOR CIRCUIT SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a method of manufacturing a thin-film transistor circuit substrate including forming an oxide semiconductor thin film above an insulative substrate, forming a gate insulation film and a gate electrode which are stacked on a first region of the oxide semiconductor thin film, and exposing from the gate insulation film a second region and a third region of the oxide semiconductor thin film, the second region and the third region being located on both sides of the first region of the oxide semiconductor thin film, forming an interlayer insulation film of silicon nitride including dangling bonds of silicon, the interlayer insulation film covering the second region and the third region of the oxide semiconductor thin film, the gate insulation film and the gate electrode, and forming a source electrode and a drain electrode. | 08-09-2012 |
20140191231 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a method of manufacturing a thin-film transistor circuit substrate including forming an oxide semiconductor thin film above an insulative substrate, forming a gate insulation film and a gate electrode which are stacked on a first region of the oxide semiconductor thin film, and exposing from the gate insulation film a second region and a third region of the oxide semiconductor thin film, the second region and the third region being located on both sides of the first region of the oxide semiconductor thin film, forming an interlayer insulation film of silicon nitride including dangling bonds of silicon, the interlayer insulation film covering the second region and the third region of the oxide semiconductor thin film, the gate insulation film and the gate electrode, and forming a source electrode and a drain electrode. | 07-10-2014 |
Atsushi Sasaki, Higashikurume-Shi JP
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20130103405 | OPERATING SYSTEM AND METHOD OF OPERATING - An operation determination processing section of a center extracts words included in the utterance of a driver and an operator, reads an attribute associated with each word from a synonym and related word in which an attribute is stored so as to be associated with each word, reads a domain of a candidate or the like for the task associated with the attribute from the synonym and related word in which domains of a candidate for a task associated with the read attribute or domains of a task to be actually performed are stored, totals the domains read for each word for words included in the utterance of the driver or the like, and estimates those related to a domain with a highest total score as the candidate for the task and the task to be actually performed. In this manner, it is possible to estimate the task with high accuracy. | 04-25-2013 |
Atsushi Sasaki, Hyogo JP
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20150076467 | TFT SUBSTRATE, METHOD FOR PRODUCING SAME, ORGANIC EL DISPLAY DEVICE, AND METHOD FOR MANUFACTURING ORGANIC EL DISPLAY DEVICE - A method of manufacturing a thin film transistor (TFT) substrate in which a TFT including an oxide semiconductor layer is formed, the method including: forming an insulating layer to cover the oxide semiconductor layer; and forming an opening in the insulating layer, wherein the insulating layer includes a first film, a second film which is provided above the first film and is an aluminum oxide film, and a third film which is provided above the second film and is a film including silicon, and the forming of an opening includes: forming a resist pattern above the third film; processing the third film by dry etching; and processing the second film by wet etching. | 03-19-2015 |