Patent application number | Description | Published |
20080231667 | FERROELECTRIC FILM, PROCESS FOR PRODUCING THE SAME, FERROELECTRIC DEVICE, AND LIQUID DISCHARGE DEVICE - A ferroelectric film having a columnar structure constituted by a plurality of columnar grains, and containing as a main component a perovskite oxide which has a composition expressed by a compositional formula A | 09-25-2008 |
20080248265 | PATTERNED INORGANIC FILM, PIEZOELECTRIC DEVICE, AND PROCESS FOR PRODUCING THE SAME - An inorganic film formed of an inorganic material on a metal film having a surface including surface-oxidized areas. The surface-oxidized areas are surface oxidized to different degrees. For example, the surface-oxidized areas are one or more lowly-surface-oxidized areas and one or more highly-surface-oxidized areas. The inorganic film includes regions which are respectively formed on the surface-oxidized areas, and the regions have different crystal structures according to the different degrees of surface oxidation. For example, a patterned inorganic film constituted by one or more protruding portions arranged on one or more lowly-surface-oxidized areas of the surface of the metal film can be produced by removing the portions of the inorganic film formed on highly-surface-oxidized areas. | 10-09-2008 |
20090026887 | PIEZOELECTRIC DEVICE, PIEZOELECTRIC ACTUATOR, AND LIQUID DISCHARGE DEVICE - In a piezoelectric device, a first electrode, a first piezoelectric film, a second piezoelectric film, and a second electrode are formed in this order on a first electrode formed above a surface of the substrate, and an intermediate electrode is arranged between the first and second piezoelectric films. Each of the first and second piezoelectric films has a thickness of 10 micrometers or smaller, and has a first surface facing toward the substrate and a second surface opposite to the first surface. At least one of the first and second surfaces has an arithmetic average surface roughness (Ra) of 0.5 micrometers or smaller. | 01-29-2009 |
20090058954 | PROCESS FOR FORMING A FERROELECTRIC FILM, FERROELECTRIC FILM, FERROELECTRIC DEVICE, AND LIQUID DISCHARGE APPARATUS - A ferroelectric film containing a perovskite type oxide represented by Formula (P) is formed on a substrate, which stands facing a target according to the composition of the ferroelectric film, by a sputtering technique under conditions satisfying Formulas (1) and (2), or (3) and (4): | 03-05-2009 |
20090058955 | PROCESS FOR FORMING A FERROELECTRIC FILM, FERROELECTRIC FILM, FERROELECTRIC DEVICE, AND LIQUID DISCHARGE APPARATUS - A ferroelectric film containing a perovskite type oxide that is represented by Formula (P) is formed on a substrate by a sputtering technique under conditions satisfying Formulas (1) and (2), or Formulas (3) and (4): | 03-05-2009 |
20090062114 | PEROVSKITE TYPE OXIDE, FERROELECTRIC FILM, PROCESS FOR PRODUCING SAME, FERROELECTRIC DEVICE, AND LIQUID DISCHARGE APPARATUS - A perovskite type oxide that is represented by Formula (P) shown below is provided: | 03-05-2009 |
20090072673 | PIEZOELECTRIC DEVICE, AND LIQUID DISCHARGE DEVICE USING THE PIEZOELECTRIC DEVICE - A piezoelectric device having a piezoelectric film formed over a substrate through an electrode by vapor phase deposition using plasma, and constituted by columnar crystals of one or more perovskite oxides Pb(Ti | 03-19-2009 |
20090236949 | PROCESS FOR PRODUCING A PIEZOELECTRIC FILM, FILM FORMING APPARATUS, AND PIEZOELECTRIC FILM - A piezoelectric film is formed on a substrate by a sputtering technique at a film formation temperature higher than a Curie temperature. An electric field is formed across the piezoelectric film in a direction heading from a surface side of the piezoelectric film toward the substrate side before a temperature of the piezoelectric film having been formed falls to a temperature lower than the Curie temperature, polarization processing being caused to begin by the formation of the electric field across the piezoelectric film. The temperature of the piezoelectric film is allowed to fall to a temperature lower than the Curie temperature in the state in which the electric field is being formed. | 09-24-2009 |
20090255804 | PIEZOELECTRIC FILM FORMING METHOD - When forming a piezoelectric film of a Pb containing perovskite-type oxide on a substrate by sputtering, forming the film under a film forming condition in which a film forming temperature Ts(° C.) and a surface potential Vsub of the substrate satisfy Formulae (1) and (2) below respectively. | 10-15-2009 |
20090267998 | PIEZOELECTRIC DEVICE, METHOD OF ACTUATING THE SAME, PIEZOELECTRIC APPARATUS, AND LIQUID DISCHARGE APPARATUS - A piezoelectric device comprises a piezoelectric body and electrodes for applying an electric field in a predetermined direction across the piezoelectric body. The piezoelectric body contains an inorganic compound polycrystal, which contains first ferroelectric substance crystals having orientational characteristics at the time free from electric field application and has characteristics such that, with application of at least a predetermined electric field E | 10-29-2009 |
20100005638 | RECESS-PROTRUSION STRUCTURE BODY, PROCESS FOR PRODUCING THE SAME, PIEZOELECTRIC DEVICE, AND INK JET RECORDING HEAD - In a step (A), a selectively removable resist layer or a selectively removable sacrifice layer is formed in a predetermined pattern in a protrusion non-forming region on a base plate. In a step (B), a pillar-shaped structure film is formed on a side of the base plate, on which side the resist layer or the sacrifice layer has been formed in the predetermined pattern. The pillar-shaped structure film contains a plurality of pillar-shaped bodies, each of which extends in a direction nonparallel with a base plate surface of the base plate. In a step (C), the resist layer or the sacrifice layer, and a region of the pillar-shaped structure film, which region is located on the resist layer or the sacrifice layer, are removed by use of a lift-off technique. At least one protruding region, which contains the pillar-shaped bodies, is thus formed. | 01-14-2010 |
20100040770 | PATTERNED INORGANIC FILM, PIEZOELECTRIC DEVICE, AND PROCESS FOR PRODUCING THE SAME - An inorganic film formed of an inorganic material on a metal film having a surface including surface-oxidized areas. The surface-oxidized areas are surface oxidized to different degrees. For example, the surface-oxidized areas are one or more lowly-surface-oxidized areas and one or more highly-surface-oxidized areas. The inorganic film includes regions which are respectively formed on the surface-oxidized areas, and the regions have different crystal structures according to the different degrees of surface oxidation. For example, a patterned inorganic film constituted by one or more protruding portions arranged on one or more lowly-surface-oxidized areas of the surface of the metal film can be produced by removing the portions of the inorganic film formed on highly-surface-oxidized areas. | 02-18-2010 |
20100123368 | FILM FORMATION METHOD, FILM FORMATION DEVICE, PIEZOELECTRIC FILM, PIEZOELECTRIC DEVICE, LIQUID DISCHARGE DEVICE AND PIEZOELECTRIC ULTRASONIC TRANSDUCER - When a film containing constituent elements of a target is formed on a substrate through a vapor deposition process using plasma with placing the substrate and the target to face each other, a potential in a spatial range of at least 10 mm extending laterally from the outer circumference of the substrate is controlled to be equal to a potential on the substrate, and/or the substrate is surrounded with a wall surface having a potential controlled to be equal to the potential on the substrate. | 05-20-2010 |
20100208005 | FILM FORMATION METHOD, FILM FORMATION DEVICE, PIEZOELECTRIC FILM, PIEZOELECTRIC DEVICE AND LIQUID DISCHARGE DEVICE - When a film containing constituent elements of a target is formed on a substrate through a vapor deposition process using plasma with placing the substrate and the target to face to each other, the film is formed with surrounding the substrate with a wall surface having the constituent elements of the target adhering thereto, and applying a physical treatment to the wall surface to cause the components adhering to the wall surface to be released into the film formation atmosphere. | 08-19-2010 |
20100214369 | Piezoelectric film, method for forming piezoelectric film, piezoelectric device and liquid discharge device - A piezoelectric film of the present invention has a surface roughness value P-V of not more than 170.0 nm, which is defined by a difference between a maximum height (peak value P) and a minimum height (valley value V) on a film surface, a piezoelectric constant d | 08-26-2010 |
20110121096 | PIEZOELECTRIC DEVICE, PIEZOELECTRIC DEVICE MANUFACTURING METHOD, AND LIQUID DISCHARGE APPARATUS - A piezoelectric device, including the following on a substrate in the order listed below: a lower electrode, a piezoelectric film which contains a Pb containing perovskite oxide represented by a general expression (P) below, and an upper electrode, in which the piezoelectric film has a layer of pyrochlore oxide on the surface facing the lower electrode, and the average layer thickness of the pyrochlore oxide layer is not greater than 20 nm. | 05-26-2011 |
20110156537 | ACTUATOR ELEMENT, METHOD OF DRIVING ACTUATOR ELEMENT, METHOD OF MANUFACTURING ACTUATOR ELEMENT, DEVICE INSPECTION METHOD AND MEMS SWITCH - An actuator element includes: a piezoelectric body; a pair of electrodes mutually opposing to each other via the piezoelectric body; a diaphragm to which the piezoelectric body sandwiched between the pair of electrodes is bonded; and a base substrate arranged to oppose a movable part including the piezoelectric body and the diaphragm, the movable part being displaced in a direction toward the base substrate by application of a drive voltage to the pair of electrodes, wherein polarization (Pr)-electric field (E) hysteresis characteristics of the piezoelectric body are biased with respect to an electric field, and by application of a voltage in an opposite direction to the drive voltage, to the pair of electrodes, the movable part is displaced in a direction away from the base substrate. | 06-30-2011 |
20110163181 | FILM FORMATION METHOD, FILM FORMATION DEVICE, PIEZOELECTRIC FILM, PIEZOELECTRIC DEVICE AND LIQUID DISCHARGE DEVICE - When a film containing constituent elements of a target is formed on a substrate through a vapor deposition technique using plasma with placing the substrate and the target to face each other, film formation is carried out with controlling variation of plasma potential Vs (V) in a plasma space in an in-plane direction of the substrate to be within ±10V at a distance of 2-3 cm from a surface of the target toward the substrate. | 07-07-2011 |
20110204750 | ACTUATOR, ACTUATOR STRUCTURE AND METHOD OF MANUFACTURING ACTUATOR - An actuator includes: a diaphragm having a thickness equal to or greater than 0.5 μm and equal to or less than 20 μm; a piezoelectric body layer which is provided on a first surface side of the diaphragm, and receives stress from the diaphragm; a pair of electrodes which is provided on the first surface side of the diaphragm together with the piezoelectric body layer, and is mutually opposing via the piezoelectric body layer; and a stress adjusting layer which is provided on a second surface side of the diaphragm on an opposite side to the first surface of the diaphragm, and receives stress from the diaphragm in a same direction as the stress that the piezoelectric body layer receives from the diaphragm. | 08-25-2011 |
20110236659 | METHOD OF MANUFACTURING MICRO STRUCTURE, AND SUBSTRATE STRUCTURE - A method of manufacturing a micro structure, includes the steps of: preparing separate first and second substrates, the first substrate having a first surface on which a first structural body having a first height and a second structural body having a second height greater than the first height of the first structural body are arranged, the second substrate having a second surface; then placing the first and second substrates to cause the first and second surfaces to face each other across the first and second structural bodies; and then bonding the first and second substrates to each other while compressing the second structural body in a height direction thereof between the first and second surfaces to cause the second structural body to have a height defined by the first structural body. | 09-29-2011 |
20110316937 | PIEZOELECTRIC FILM, PIEZOELECTRIC DEVICE AND LIQUID EJECTION APPARATUS - A piezoelectric film has a columnar crystal structure constituted of a plurality of columnar crystals, and contains a perovskite oxide represented by the following formula (P) as a main component: | 12-29-2011 |
20120102696 | PIEZOELECTRIC DEVICE, PROCESS FOR PRODUCING THE SAME, AND LIQUID DISCHARGE DEVICE - A piezoelectric device includes a substrate; and a laminated film formed above the substrate. The laminated film includes a lower electrode layer, a piezoelectric layer, and an upper electrode layer formed in this order, and the lower electrode layer is a metal electrode layer containing as one or more main components one or more nonnoble metals and/or one or more nonnoble alloys. Preferably, the one or more main components are one or more of the metals Cr, W, Ti, Al, Fe, Mo, In, Sn, Ni, Cu, Co, and Ta, and alloys of the metals. | 05-03-2012 |
20120193225 | FILM FORMATION METHOD, FILM FORMATION DEVICE, PIEZOELECTRIC FILM, PIEZOELECTRIC DEVICE, LIQUID DISCHARGE DEVICE AND PIEZOELECTRIC ULTRASONIC TRANSDUCER - When a film containing constituent elements of a target is formed on a substrate through a vapor deposition process using plasma with placing the substrate and the target to face each other, a potential in a spatial range of at least 10 mm extending laterally from the outer circumference of the substrate is controlled to be equal to a potential on the substrate, and/or the substrate is surrounded with a wall surface having a potential controlled to be equal to the potential on the substrate. | 08-02-2012 |