Patent application number | Description | Published |
20110017659 | Oxide Compounds as a Coating Composition - The invention relates to a coating composition consisting of an oxide compound. The invention also relates to a method for producing a coating composition consisting of an oxide compound and to a method for coating substrates composed of metal, semiconductor, alloy, ceramic, quartz, glass or glass-type materials with coating compositions of this type. The invention further relates to the use of a coating composition according to the invention for coating metal, semiconductor, alloy, ceramic, quartz, glass and/or glass-type substrates. | 01-27-2011 |
20150027543 | Oxide Compounds as a Coating Composition - The invention relates to a coating composition consisting of an oxide compound. The invention also relates to a method for producing a coating composition consisting of an oxide compound and to a method for coating substrates composed of metal, semiconductor, alloy, ceramic, quartz, glass or glass-type materials with coating compositions of this type. The invention further relates to the use of a coating composition according to the invention for coating metal, semiconductor, alloy, ceramic, quartz, glass and/or glass-type substrates. | 01-29-2015 |
Patent application number | Description | Published |
20090316462 | MAGNETIC TRACKS WITH DOMAIN WALL STORAGE ANCHORS - Magnetic shift registers in which data writing and reading is accomplished by moving the magnetic domain walls by electric current. Various embodiments of domain wall nodes or anchors that stabilize a domain wall are provided. In some embodiments, the wall anchors are elements separate from the magnetic track. In other embodiments, the wall anchors are disturbances in the physical configuration of the magnetic track. In still other embodiments, the wall anchors are disturbances in the material of the magnetic track. | 12-24-2009 |
20100123210 | ASYMMETRIC BARRIER DIODE - A diode having a reference voltage electrode, a variable voltage electrode, and a diode material between the electrodes. The diode material is formed of at least one high-K dielectric material and has an asymmetric energy barrier between the reference voltage electrode and the variable voltage electrode, with the energy barrier having a relatively maximum energy barrier level proximate the reference voltage electrode and a minimum energy barrier level proximate the variable voltage electrode. | 05-20-2010 |
20110006275 | NON-VOLATILE RESISTIVE SENSE MEMORY - A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. A first and second electrode are separated by the resistive sense memory stack. The resistive sense memory cell can further include an oxygen diffusion barrier layer separating the layer of crystalline praseodymium calcium manganese oxide from the layer of amorphous praseodymium calcium manganese oxide a layer. Methods include depositing an amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. | 01-13-2011 |
20120153400 | TUNNELING TRANSISTORS - A transistor including a source; a drain; a gate region, the gate region including a gate; an island; and a gate oxide, wherein the gate oxide is positioned between the gate and the island; and the gate and island are coactively coupled to each other; and a source barrier and a drain barrier, wherein the source barrier separates the source from the gate region and the drain barrier separates the drain from the gate region. | 06-21-2012 |
20120273744 | NON-VOLATILE RESISTIVE SENSE MEMORY WITH IMPROVED SWITCHING - A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. A first and second electrode are separated by the resistive sense memory stack. The resistive sense memory cell can further include an oxygen diffusion barrier layer separating the layer of crystalline praseodymium calcium manganese oxide from the layer of amorphous praseodymium calcium manganese oxide a layer. Methods include depositing an amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. | 11-01-2012 |