Haruka
Haruka Ito, Hagagun JP
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20120292826 | MOLDING APPARATUS AND METHOD - In a molding machine, an electrical current is caused to flow to a coil by a high-frequency power supply, and a magnetic field is generated, whereupon lines of magnetic force are generated so as to substantially conform to cavity faces of the stationary mold and the moveable mold. The magnetic field strength is constant with respect to position in the lengthwise direction of the coil, and eddy currents are generated uniformly with respect to the cavity faces. Because the molds have electrical resistance, Joule heat is generated by the eddy currents and electrical resistance, and the cavity faces are heated. When a material in a molten state is injected into the cavities of the heated molds, flowability of the material is promoted, and therefore the quality of the molded article is improved. | 11-22-2012 |
Haruka Itoh, Tokyo JP
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20140043367 | STORAGE MEDIUM HAVING STORED THEREIN IMAGE DISPLAY PROGRAM, IMAGE DISPLAY APPARATUS, IMAGE DISPLAY SYSTEM, AND IMAGE DISPLAY METHOD - An input provided by a user is received from an input apparatus, and in accordance with the input, a current display position of an operation handler image to be displayed on the display apparatus is set. In accordance with the current display position of the operation handler image, a setting of information regarding an operation target to be operated by the user is changed, and a display position of the operation handler image used when the setting has been changed is retained. Then, the operation handler image is displayed on the display apparatus at the set current display position, and a past position image indicating at least one of the retained past display positions is displayed on the display apparatus. | 02-13-2014 |
Haruka Kamiyama, Nagasaki-Shi JP
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20120065263 | RETROVIRUS-INFECTION INHIBITOR - An infection inhibitor of retrovirus, particularly human immunodeficiency virus, comprising, as an active ingredient, at least one compound selected from the group consisting of a compound represented by the formula (I) (GGA) or a salt thereof, a compound represented by the formula (II) (NIK-333) or a salt thereof, and derivatives thereof. | 03-15-2012 |
Haruka Kanda US
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20150330451 | ROLLING BEARING AND GREASE COMPOSITION USED THEREIN - A rolling bearing including a plurality of rolling elements rollably provided between an inner ring and an outer ring and having enclosed therein a grease composition obtained by adding three kinds of antirust agents which are a carboxylic acid-based antirust agent, a carboxylate-based antirust agent and an amine-based antirust agent, to a base oil which contains at least one kind of a mineral oil and a synthetic oil and has a kinematic viscosity of 200 to 400 mm | 11-19-2015 |
Haruka Kubo, Yokohama JP
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20150266059 | ULTRASONIC PROBE - According to an embodiment, an ultrasonic probe includes a backing plate, a piezoelectric element, and a protective layer. The piezoelectric element has a piezoelectric vibrator. The piezoelectric element is provided on the backing plate. The protective layer is provided on the surface of an end of the piezoelectric element on the side of the backing plate. Compressive stress is applied to the inside of the protective layer, and the transmission rate of sound inside the protective layer is a predetermined rate. | 09-24-2015 |
Haruka Kusai, Kanagawa-Ken JP
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20130181274 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a substrate and a first transistor. The substrate has a major surface. The first transistor is provided on the major surface. The first transistor includes a first stacked body, first and second conductive sections, a first gate electrode, and a first gate insulating film. The first stacked body includes first semiconductor layers and first insulating layers alternately stacked. The first semiconductor layers have a side surface. The first conductive section is electrically connected to one of the first semiconductor layers. The second conductive section is apart from the first conductive section and electrically connected to the one of the first semiconductor layers. The first gate electrode is provided between the first and second conductive sections and opposed to the side surface. The first gate insulating film is provided between the first gate electrode and the first semiconductor layers. | 07-18-2013 |
Haruka Kusai, Yokohama-Shi JP
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20120273747 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a fin type stacked layer structure which has first to third semiconductor layers, and first to third layer select transistors to select one of the first to third semiconductor layers. The second layer select transistor is normally on in the second semiconductor layer, and is controlled to be on or off in the first and third semiconductor layers. A channel region of the second semiconductor layer which is covered with a gate electrode of the second layer select transistor has a metal silicide. | 11-01-2012 |
20130134372 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes first to n-th semiconductor layers (n is a natural number equal to or more than 2) being stacked in order from a surface of an insulating layer in a first direction perpendicular to the surface of the insulating layer, the first to n-th semiconductor layers extending in a second direction parallel to the surface of the insulating layer, the first to n-th semiconductor layers being insulated from each other, a common electrode connected to the first to n-th semiconductor layers in a first end of the second direction thereof, and a layer select transistor which uses the first to n-th semiconductor layers as channels and which selects one of the first to n-th semiconductor layers. | 05-30-2013 |
20130175490 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a nonvolatile semiconductor memory device includes a fin-type stacked layer structure having memory cells, and a beam connected to an end portion of the structure. Each of the structure and the beam includes semiconductor layers stacked in a perpendicular direction. The beam includes a contact portion provided at one end of the beam, and a low resistance portion provided between the contact portion and the end portion of the structure. | 07-11-2013 |
20130181184 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a nonvolatile semiconductor memory device includes fin-type stacked layer structures. Each of the structures includes semiconductor layers stacked in a perpendicular direction. Assist gate electrodes are disposed in an in-plane direction and divided on a surface in the perpendicular direction of the structures. | 07-18-2013 |
20130200450 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a nonvolatile semiconductor memory device includes a fin structure stacked in order of a first oxide layer, a semiconductor layer and a second oxide layer in a first direction perpendicular to a surface of the semiconductor substrate, the fin structure extending in a second direction parallel to the surface of the semiconductor substrate, and a gate structure stacked in order of a gate oxide layer, a charge storage layer, a block insulating layer and a control gate electrode in a third direction perpendicular to the first and second directions from a surface of the semiconductor layer in the third direction. | 08-08-2013 |
20130222011 | PROGRAMMABLE LOGIC SWITCH - One embodiment provides a programmable logic switch in which a first nonvolatile memory and a second nonvolatile memory are formed in the same well, and in which to change the first nonvolatile memory from an erased state to a written state and leave the second nonvolatile memory being in the erased state, a first write voltage is applied to a first line connected with gate electrodes of the first and second nonvolatile memories, a second write voltage is applied to a second line connected to a source in the first nonvolatile memory, and a third write voltage lower than the second write voltage is applied to a fourth line connected to a source of the second nonvolatile memory. | 08-29-2013 |
20130307047 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a device includes a first fin structure having first to n-th semiconductor layers (n is a natural number equal to or more than 2) stacked in a first direction perpendicular to a surface of a semiconductor substrate, and extending in a second direction parallel to the surface of the semiconductor substrate, first to n-th memory cells provided on surfaces of the first to n-th semiconductor layers in a third direction perpendicular to the first and second directions respectively, and first to n-th select transistors connected in series to the first to n-th memory cells respectively. | 11-21-2013 |
20150287913 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a nonvolatile semiconductor memory device includes fin-type stacked layer structures. Each of the structures includes semiconductor layers stacked in a perpendicular direction. Assist gate electrodes are disposed in an in-plane direction and divided on a surface in the perpendicular direction of the structures. | 10-08-2015 |
Haruka Kusai, Kanagawa JP
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20120091420 | NONVOLATILE RESISTANCE CHANGE DEVICE - According to one embodiment a first variable resistance layer which is arranged between a second electrode and a first electrode and in which a first conductive filament is capable of growing based on metal supplied from the second electrode, and an n-th variable resistance layer which is arranged between an n-th electrode and an (n+1)-th electrode and in which an n-th conductive filament whose growth rate is different from the first conductive filament is capable of growing based on metal supplied from the (n+1)-th electrode are included, a configuration in which a plurality of conductive filaments is electrically connected in series between the first electrode layer and the (n+1)-th electrode layer is included, and a resistance is changed in a stepwise manner. | 04-19-2012 |
20120211719 | NONVOLATILE VARIABLE RESISTIVE DEVICE - According to one embodiment, a first electrode includes a metal element. A second electrode includes a semiconductor element. A third electrode includes a metal element. A first variable resistive layer is arranged between the first electrode and the second electrode and is capable of reversibly changing a resistance by filament formation and dissolution of the metal element of the first electrode. A second variable resistive layer is arranged between the second electrode and the third electrode and is capable of reversibly changing a resistance by filament formation and dissolution of the metal element of the third electrode. | 08-23-2012 |
20120280303 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a first trench extending in a first direction is formed in a stacked structure in which a plurality of spacer films and a plurality of channel semiconductor films are alternately stacked. A first space is formed by forming a recess in the channel semiconductor films from the first trench. A tunnel dielectric film is formed in the first space, and the first space is further filled with a floating gate electrode film. Second trenches that divide the stacked structure at predetermined interval in the first direction are formed so as to divide the floating gate electrode film between memory cells adjacent to each other in the first direction but not to divide the channel semiconductor films. | 11-08-2012 |
Haruka Kusukame, Osaka JP
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20130048962 | ORGANIC ELECTROLUMINESCENT ELEMENT, METHOD FOR PRODUCING SAME, AND DEVICE FOR PRODUCING SAME - Problems to be solved of the present invention are to provide a method for producing an organic electroluminescent device capable of producing an organic electroluminescent device having long lifetime, an organic electroluminescent device having long lifetime, a planar light source, an illumination apparatus and a display apparatus each having long lifetime. Means for solving the problem is a method for producing an organic electroluminescent device comprising a first electrode, a second electrode and a light emitting layer arranged between the first and second electrodes, the light emitting layer containing an organic film, the method comprising a step of applying a solution containing an organic compound onto the surface of a layer which is to be located just below the light emitting layer, to form the organic film in a dark place. | 02-28-2013 |
Haruka Kusukame, Nara JP
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20130306953 | METHOD FOR PRODUCING ELECTROLUMINESCENCE DEVICE - A method is provided for producing an organic EL device, capable of producing an organic EL device having a long light emission life, an organic EL device produced by the production method, and a planar light source, a lightening system and a display device each having the organic EL device. Included is a method for producing an organic electroluminescence device including a first electrode; a second electrode; and an organic layer including an organic compound provided between the first and second electrodes. The organic layer is formed by a method including an organic thin film forming step of forming, by coating, an organic thin film including an organic compound on a surface of a layer on which the organic layer is formed, under low-humidity; and an organic thin film storing step of storing the organic thin film obtained by the organic thin film forming step, under high-humidity. | 11-21-2013 |
20150044805 | ORGANIC ELECTRONIC DEVICE MANUFACTURING METHOD AND ORGANIC EL DEVICE MANUFACTURING METHOD - A manufacturing method including: forming a first electrode; forming a first bank; forming a first organic functional film; forming a second bank; forming a second organic functional film; and forming a second electrode. In the forming of the second bank, the second bank is formed such that, in plan view, a bottom edge of a sidewall surface of the second bank facing the second aperture is located at the same position as or is set back from a bottom edge of a sidewall surface of the first bank facing the first aperture. In the forming of the second organic functional film, the droplet of the second ink is applied such that an upper edge of the second organic functional film within the second aperture is located at a same level as or at a higher level than the bottom edge of the sidewall surface of the second bank. | 02-12-2015 |
20150059800 | TRANSFER DEVICE AND PRINTING DEVICE - A transfer device is provided for transferring, to an adherend, a thin-film to which a functional material adheres, the transfer device including a plurality of rollers for providing a rotating function, and an endless belt installed on the plurality of rollers, wherein, on the endless belt, the transfer device retains the thin-film with a surface of the thin-film to which the functional material adheres being in contact with the endless belt, and the transfer device transfers the thin-film to the adherend so that a surface opposite a surface of the thin-film to which the functional material adheres is in contact with the adherend. This configuration allows an ultrathin thin-film to be simply transferred to the adherend such as a human body without damage to the thin-film, the thin-film having the adhered functional material and requiring careful handling. | 03-05-2015 |
20150059968 | DEVICE AND METHOD FOR PRINTING FUNCTIONAL MATERIAL ON BIOCOMPATIBLE THIN-FILM - A device for printing a functional material on a biocompatible thin-film is provided, including: a feeder for feeding a thin-film sheet including the biocompatible thin-film and a first support into the printing device; a controller for loading makeup information for printing the functional material on the thin-film; a printing unit for printing the functional material corresponding to the makeup information on the thin-film based on a makeup signal from the controller; a feeder for feeding a second support into the device; a transfer unit for transferring a thin-film printed body, the thin-film on which the functional material is printed by the printing unit from the first support to the second support; and a delivery unit for delivering the transferred thin-film printed body to outside the device. This configuration enables people who lack sufficient makeup knowledge, techniques, or time to apply makeup easily, quickly, and safely. | 03-05-2015 |
20150132878 | METHOD FOR MANUFACTURING ORGANIC EL ELEMENT, ORGANIC EL ELEMENT, ORGANIC EL DISPLAY PANEL, ORGANIC EL DISPLAY APPARATUS, AND ORGANIC EL LIGHT-EMITTING APPARATUS - Method for manufacturing organic EL element, including: reducing internal pressure of vacuum chamber by vacuum pump connected thereto in state where substrate with applied film formed thereon is placed in vacuum chamber, applied film having been formed by applying material of organic light-emitting layer to substrate; and purifying applied film having passed through reducing the internal pressure of the vacuum chamber. Diphenylamine is used in portion of vacuum pump that is connected to inside of vacuum chamber. Reducing internal pressure of vacuum chamber is performed such that molecules of diphenylamine fly from vacuum pump into vacuum chamber and some of molecules are taken into applied film, and purifying is performed so that content of diphenylamine in applied film is in range from more than 0 nmol/cm | 05-14-2015 |
20150265030 | METHOD OF PRODUCING AN ADHESIVE SHEET FOR SKIN, COSMETIC METHOD AND ADHESIVE SHEET FOR SKIN - A method of producing an adhesive sheet for skin includes attaching a water-absorptive support to a water-permeable biocompatible film to prepare a stack including the biocompatible film and the support, applying an aqueous ink including water and a functional material to the biocompatible film side of the stack thereby to fix the functional material to the biocompatible film, and separating the biocompatible film having the functional material fixed thereto from the support. An adhesive sheet for skin comprises a water-permeable biocompatible film to which an aqueous ink including water and a functional material has been applied and fixed and a water-absorptive support detachably attached to the biocompatible film. | 09-24-2015 |
Haruka Masuda, Tokyo JP
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20150177433 | INFRARED SHIELDING FILM - [Problem] To provide a an infrared shielding film which realizes a balance between the hard coating properties of the cured resin layer and the suppression of peeling or cracking of the film, while having heat shielding characteristics of an infrared shielding film. | 06-25-2015 |
Haruka Matsubara, Nerima-Ku, Tokyo JP
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20160032485 | METHOD FOR GROWING BETA-GA2O3-BASED SINGLE CRYSTAL - Provided is a method for growing a β-Ga | 02-04-2016 |
Haruka Matsubara, Tokyo JP
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20140352604 | METHOD FOR GROWING -Ga2O3 SINGLE CRYSTAL - A method for growing a β-Ga | 12-04-2014 |
Haruka Miki, Tsukuba-Shi, Ibaraki JP
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20150299332 | MEDICAMENT COMPRISING ACTIVITY MODULATOR FOR CD300a-EXPRESSING CELL ASSOCIATED WITH ALLERGIC DISEASE, CD300a GENE-DEFICIENT MOUSE, AND USE OF ACTIVITY MODULATOR FOR CD300a-EXPRESSING CELL - The present invention provides medicaments for allergic diseases (atopic dermatitis, asthma, and the like), and a tool useful for pathology analysis of allergic diseases. A medicament containing as an effective component an activity modulator for suppressing inhibitory signal transduction of a CD300a-expressing myeloid cell, which activity modulator contains a substance that inhibits binding of CD300a to phosphatidyl serine, can be used for treatment or prophylaxis of an allergic disease. A CD300a gene-deficient mouse can be used as a model mouse in which the allergic disease is hardly induced after administration of a substance that induces the allergic disease, which may be used for carrying out pathology analysis of an allergic disease, or for screening of a possible candidate substance for an effective component of a therapeutic agent or prophylactic agent for the disease. | 10-22-2015 |
Haruka Miki, Tsukuba-Shi JP
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20150047059 | ACTIVITY MODULATOR, MEDICINAL AGENT COMPRISING SAME, USE OF CD300A GENE-DEFICIENT MOUSE, AND ANTI-CD300A ANTIBODY - The present invention aims to provide: an immunostimulant useful for maintaining, enhancing or suppressing an immune function associated with CD300a activation signaling, or an immunomodulator as an immunosuppressant useful for suppressing the immune function; use of a CD300a gene-deficient mouse for pathology analysis and the like; an anti-CD300a antibody; and the like. | 02-12-2015 |
Haruka Miyagata, Kanagawa JP
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20090315867 | INFORMATION PROCESSING UNIT - An information processing unit of the present invention includes a display control unit that causes an icon display area, in which a plurality of icons related to each other are grouped, to be displayed and an operation unit that receives various operations by a user. When the operation unit inputs a command for expanding or contracting the icon display area in a one-dimensional direction which is the same as an arrangement direction of the plurality of the icons in the icon display area, the display control unit causes the icon display area to be expanded or contracted in the one-dimensional direction. With such a configuration, the operability can be enhanced by shortening a time for searching for a desired icon. | 12-24-2009 |
Haruka Nakamura, Tokyo JP
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20120135469 | NOVEL GLYCOSYLTRANSFERASE, NOVEL GLYCOSYLTRANSFERASE GENE, AND NOVEL SUGAR DONOR COMPOUND - An object of the present invention is to provide a sugar donating reagent comprising a sugar donor compound other than a sugar nucleotide and an enzyme capable of catalyzing a glycosyl transfer reaction using a sugar donor compound other than a sugar nucleotide. The present invention provides the following: a sugar donating reagent containing a compound of formula (A): | 05-31-2012 |
Haruka Narita, Kanagawa JP
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20080206570 | Resin Layer Formation Method, Resin Layer Formation Device, and Disk Manufacturing Method - A resin layer formation method, resin layer formation device, disk and disk manufacturing method for making a resin layer uniform on a substrate before lamination or on a substrate to be coated by a simple procedure are provided. Adhesive A is coated at the inner circumference side while rotating a substrate P at low speed, a first adhesive layer AL | 08-28-2008 |
20100024974 | BONDING METHOD AND BONDING APPARATUS - A bonding method and a bonding apparatus whereby the uniformity of an adhesive layer during application is ensured, variation of the adhesive layer during manufacture can be suppressed and the occurrence of air bubbles can be reduced. The bonding apparatus includes: a first spin coating device 1 for applying an adhesive B1 onto one surface of a first substrate P | 02-04-2010 |
20100043964 | BONDING METHOD AND BONDING APPARATUS - A bonding method and a bonding apparatus whereby the uniformity of an adhesive layer during application is ensured and variation of the adhesive layer during manufacture can be suppressed. The bonding apparatus includes: a first spin coating device | 02-25-2010 |
Haruka Narita, Yokohama-Shi JP
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20100275840 | RESIN LAYER FORMATION METHOD, RESIN LAYER FORMATION DEVICE, DISK, AND DISK MANUFACTURING METHOD - A resin layer formation method, resin layer formation device, disk and disk manufacturing method for making a resin layer uniform on a substrate before lamination or on a substrate to be coated by a simple procedure are provided. Adhesive A is coated at the inner circumference side while rotating a substrate P at low speed, a first adhesive layer AL | 11-04-2010 |
20120076947 | RESIN LAYER FORMATION METHOD, RESIN LAYER FORMATION DEVICE, DISK AND DISK MANUFACTURING METHOD - A resin layer formation method and device for making a resin layer uniform on a substrate before lamination or on a substrate is provided. Adhesive is coated at an inner circumference side while rotating a substrate at low speed. A first adhesive layer is formed on the surface of the substrate by rotating at high speed. A step difference section is formed around a rotation center of the substrate by irradiating ultraviolet on an area in the inner circumference side of the first adhesive layer to hardening the area. Adhesive is coated at the rotation center side from the step difference section on the substrate, and a second adhesive layer is formed on the first adhesive layer by rotating the substrate at high speed. The first adhesive layer and the second adhesive layer are integrated to form a uniform adhesive layer. | 03-29-2012 |
Haruka Saito, Fujisawa JP
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20110058224 | COLOR PROCESSOR, IMAGE FORMING APPARATUS, COLOR PROCESSING METHOD AND COMPUTER READABLE MEDIUM - A color processor includes: an acquisition unit that acquires first and second multi-valued color signals respectively indicating in a multi-valued manner quantities of first and second color materials used for reproducing color with a specific hue, the second color material having a different density from the first color material; a generation unit that generates first and second binary color signals by performing dither processing, respectively with first and second dither matrices, for the first and second multi-valued color signals acquired by the acquisition unit, the second dither matrix having the same angle and the same number of lines as the first dither matrix and being used for forming halftone dots at positions different from positions of halftone dots formed by use of the first dither matrix; and an output unit that outputs to a print mechanism the first and second binary color signals generated by the generation unit. | 03-10-2011 |
Haruka Saito, Tokyo JP
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20090271420 | DATA CLUSTERING SYSTEM, DATA CLUSTERING METHOD, AND DATA CLUSTERING PROGRAM - An object of the present invention is to perform data clustering while preventing the processing speed from decreasing while maintaining accuracy. A block division section | 10-29-2009 |
Haruka Sakai, Tokyo JP
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20130334917 | BRUSHLESS MOTOR - A brushless motor includes a stator as an armature where a plurality of coils is housed and a rotor as a magnetic exciter having a permanent magnet, wherein an end portion of the coil housed in a slot of a stator stack is inserted into a wire binding board having a wire binding pattern of the coil, the end portion of the coil is soldered to a land of the wire binding board, and the wire binding board and a circuit board are electrically conducted to each other through an connecting terminal. | 12-19-2013 |
20150078939 | HOUSING OF FAN MOTOR - A housing of a fan motor according to the invention includes: board members provided at an interval in a rotational axis direction of a fan; a coupling portion which couples the board members to each other; a protrusion portion which is protruded toward a space other than an air course from the coupling portion, the space being between the board members other than the air courses; and a fixing portion which fixes a terminal that is provided in the protrusion portion and is connected to a wiring from a power source that supplies electricity to a motor. Other member, which crosses in an extending direction of the terminal from the protrusion portion to an edge portion of the board member, is not provided. | 03-19-2015 |
Haruka Sakuma, Yokohama JP
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20150206590 | MEMORY SYSTEM - According to one embodiment, a memory system includes a nonvolatile semiconductor memory device and a controller. The system includes the nonvolatile semiconductor memory device including a plurality of memory cells; and the controller configured to control one of read operation, write operation, and a use frequency of the read operation or the write operation on the nonvolatile semiconductor memory device, and configured to change controlling for a memory cell belonging to a first group of the memory cells and to change controlling for a memory cell belonging to a second group located on an upper side or a lower side of the memory cell belonging to the first group. | 07-23-2015 |
Haruka Sakuma, Kanagawa-Ken JP
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20150076579 | SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, in a semiconductor memory device, a block selection transistor is provided between a stacked body and a word line in a hierarchy selection area. The block selection transistor includes a plurality of semiconductor bodies, a plurality of gate insulating films, and a gate electrode. The plurality of semiconductor bodies respectively extend from the end portions of the respective electrode layers to the respective word lines. The plurality of gate insulating films are provided on the side walls of the respective semiconductor bodies. The gate electrode faces the side wall of the semiconductor body through the gate insulating film. | 03-19-2015 |
Haruka Sasaki, Ehime JP
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20140345522 | HIGH-ENERGY ION IMPLANTER - A high-energy ion implanter includes: a beam generation unit that includes an ion source and a mass spectrometer; a radio frequency multi-stage linear acceleration unit; a deflection unit that includes a magnetic field type energy analysis device for filtering ions by a momentum; a beam transportation line unit; and a substrate processing/supplying unit. In this apparatus, an electric field type final energy filter that deflects a high-energy scan beam in the vertical direction by an electric field is inserted between the electric field type beam collimator and the wafer in addition to the magnetic field type mass spectrometer and the magnetic field type energy analysis device as momentum filters and the radio frequency multi-stage linear acceleration unit as a velocity filter. | 11-27-2014 |
20140352615 | HIGH-ENERGY ION IMPLANTER - A high-energy ion implanter includes a high-energy multi-stage linear acceleration unit that accelerates an ion beam so as to generate a high-energy ion beam, a deflection unit that changes the direction of the high-energy ion beam toward a semiconductor wafer, and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The beam transportation unit includes a beam shaper, a high-energy beam scanner, a high-energy electric field type beam collimator, and a high-energy electric field type final energy filter. | 12-04-2014 |
20140353517 | HIGH-ENERGY ION IMPLANTER - A high-energy ion implanter includes a beam generation unit that includes an ion source and a mass analyzer, a high-energy multi-stage linear acceleration unit, a high-energy beam deflection unit that changes the direction of a high-energy ion beam toward a wafer, and a beam transportation unit that transports the deflected high-energy ion beam to the wafer. The beam transportation unit includes a beam shaper, a high-energy beam scanner, a high-energy beam collimator, and a high-energy final energy filter. Further, the high-energy beam collimator is an electric field type beam collimator that collimates a scan beam while performing the acceleration and the deceleration of a high-energy beam by an electric field. | 12-04-2014 |
20150064888 | ION IMPLANTATION APPARATUS, BEAM PARALLELIZING APPARATUS, AND ION IMPLANTATION METHOD - An ion implantation apparatus includes a beam parallelizing unit and a third power supply unit. The beam parallelizing unit includes an acceleration lens, and a deceleration lens disposed adjacent to the acceleration lens in an ion beam transportation direction. The third power supply unit operates the beam parallelizing unit under one of a plurality of energy settings. The plurality of energy settings includes a first energy setting suitable for transport of a low energy ion, and a second energy setting suitable for transport of a high energy ion beam. The third power supply unit is configured to generate a potential difference in at least the acceleration lens under the second energy setting, and generate a potential difference in at least the deceleration lens under the first energy setting. A curvature of the deceleration lens is smaller than a curvature of the acceleration lens. | 03-05-2015 |
20150262787 | ION IMPLANTER, BEAM ENERGY MEASURING DEVICE, AND METHOD OF MEASURING BEAM ENERGY - A beam energy measuring device in an ion implanter includes a parallelism measuring unit that measures a parallelism of an ion beam at a downstream of a beam collimator of the ion implanter and an energy calculating unit that calculates an energy of the ion beam from the measured parallelism. The ion implanter may further include a control unit that controls a high energy multistage linear acceleration unit based on the measured energy of the ion beam so that the ion beam has a target energy. | 09-17-2015 |
Haruka Seki, Okayama-City JP
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20140242511 | METHOD FOR MANUFACTURING CARRIER CORE PARTICLES FOR ELECTROPHOTOGRAPHIC DEVELOPER, CARRIER CORE PARTICLES FOR ELECTROPHOTOGRAPHIC DEVELOPER, CARRIER FOR ELECTROPHOTOGRAPHIC DEVELOPER, AND ELECTROPHOTOGRAPHIC DEVELOPER - Provided is a method for manufacturing carrier core particles for electrophotographic developer capable of stably maintaining high chargeability over a long time. The method for manufacturing carrier core particles includes a granulation step of granulating a mixture of raw materials containing manganese, iron, strontium, and calcium and a firing step of firing the mixture granulated in the granulation step. The firing step includes a heating process of heating the granular mixture with an increase in temperature to a predetermined degree and a cooling process of cooling the granular mixture, after the heating process, in an atmosphere with an oxygen concentration ranging from 5000 ppm to 20000 ppm. The molar ratio of the sum of strontium and calcium to the sum of the manganese, iron, strontium, and calcium is 0.0026 to 0.013. | 08-28-2014 |
Haruka Shimizu, Ageo-Shi JP
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20140021502 | Light-Emitting Device - A highly reliable light-emitting device is provided, which is capable of effectively suppressing detrimental effects of sulfuric gas. A light-emitting device comprising a solid light-emitting element | 01-23-2014 |
20140196763 | Red Phosphor and Light-Emitting Element - In order to provide a novel CaS:Eu series red phosphor in which moisture-resistance has been improved, a red phosphor is proposed, containing Ba at 0.001 to 1.00 mol % with respect to CaS in a red phosphor represented by the general formula: CaS:Eu. | 07-17-2014 |
20150075611 | Phosphor, LED Light-Emission Element, and Light Source Device - Provided is a novel CaS-based phosphor with which chemical reactions can be inhibited even if said CaS-based phosphor is heated with a heterogeneous material. This phosphor includes: a crystalline parent material represented by the composition formula Ca | 03-19-2015 |
Haruka Shimizu, Tokyo JP
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20140284625 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A manufacturing method of a junction field effect transistor includes the steps of: (a) forming an n | 09-25-2014 |
20150236089 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A manufacturing method of a junction field effect transistor includes the steps of: (a) forming an n | 08-20-2015 |
Haruka Shimizu, Kokubunji JP
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20080258252 | CIRCUIT ARRANGEMENT HAVING A FREE-WHEEL DIODE - An object of the present invention is to reduce the conducting loss of an existing conversion circuit while suppressing its noise. The present invention is typically a circuit arrangement includes at least one switching device and a free-wheel diode connected in parallel with the switching device. The free-wheel diode is formed by connecting a silicon PiN diode in parallel with a Schottky barrier diode that uses a semiconductor material having a wider band gap than silicon as a base material. The silicon PiN diode and Schottky barrier diode are separate chips. | 10-23-2008 |
20090014719 | SEMICONDUCTOR DEVICE WITH LARGE BLOCKING VOLTAGE - A junction FET having a large gate noise margin is provided. The junction FET comprises an n | 01-15-2009 |
Haruka Shimizu, Kodaira JP
Patent application number | Description | Published |
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20090168471 | CIRCUIT DEVICE HAVING A FREE WHEELING DIODE, CIRCUIT DEVICE AND POWER CONVERTER USING DIODES - A circuit device includes at least one switching element and a free wheeling diode connected in parallel to the switching element. The free wheeling diode is made up of a Schottky barrier diode using a semiconductor material having a band gap larger than silicon as its base material and also a silicon PiN diode, which are connected in parallel. The Schottky barrier diode and the silicon PiN diode are provided in the form of separate chips. A circuit system is also provided wherein a diode having a Schottky junction of a compound semiconductor as a rectification element built therein is combined, and a relationship, R | 07-02-2009 |
20100025739 | SEMICONDUCTOR DEVICE WITH LARGE BLOCKING VOLTAGE AND METHOD OF MANUFACTURING THE SAME - A normally-off type junction FET in which a channel resistance is reduced without lowering its blocking voltage is provided. In a junction FET formed with using a substrate made of silicon carbide, an impurity concentration of a channel region (second epitaxial layer) is made higher than an impurity concentration of a first epitaxial layer to be a drift layer. The channel region is formed of a first region in which a channel width is constant and a second region below the first region in which the channel width becomes wider toward the drain (substrate) side. A boundary between the first epitaxial layer and the second epitaxial layer is positioned in the second region in which the channel width becomes wider toward the drain (substrate) side. | 02-04-2010 |
20100163935 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a junction FET of a normally-off type, a technique capable of achieving both of improvement of a blocking voltage and reduction of an ON resistance is provided. In a junction FET using silicon carbide as a substrate material, impurities are doped to a vicinity of a p-n junction between a gate region and a channel-formed region, the impurities having a conductive type which is reverse to that of impurities doped in the gate region and same as that of impurities doped in the channel-formed region. In this manner, an impurity profile of the p-n junction becomes abrupt, and further, an impurity concentration of a junction region forming the p-n junction with the gate region in the channel-formed region is higher than those of a center region in the channel-formed region and of an epitaxial layer. | 07-01-2010 |
20110018004 | SEMICONDUCTOR DEVICE WITH LARGE BLOCKING VOLTAGE AND MANUFACTURING METHOD THEREOF - There is no effective method for fabricating a semiconductor power device containing UMOSFET possessing large channel mobility and whose threshold voltage can be lowered with no loss in blocking voltage. A semiconductor device with large blocking voltage is provided utilizing silicon carbide trench MOSFET possessing both narrow regions where the p body concentration is low, and wide regions where the p body concentration is high. | 01-27-2011 |
20110198613 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - The leakage current generated in a pn junction region between a gate and a source is reduced in a junction FET using a silicon carbide substrate. In a trench junction FET using a silicon carbide substrate, nitrogen is introduced into a sidewall and a bottom surface of a trench, thereby forming an n type layer and an n | 08-18-2011 |
20110220916 | ELECTRONIC CIRCUIT DEVICE - A normally-off type silicon carbide junction FET has a problem that the gate thereof is not easy to use due to inferiority in the characteristics of it. This problem occurs because in order to achieve normally-off, the gate voltage should be off at 0V and at the same time, the ON-state gate voltage should be suppressed to about 2.5V to prevent the passage of an electric current through a pn junction between gate and source. Accordingly, a range from the threshold voltage to the ON-state gate voltage is only from about 1 V to 2V and it is difficult to control the gate voltage. Provided in the present invention is an electronic circuit device obtained by coupling, to a gate of a normally-off type silicon carbide junction FET, an element having a capacitance equal to or a little smaller than the gate capacitance of the junction FET. | 09-15-2011 |
20120193641 | NORMALLY-OFF POWER JFET AND MANUFACTURING METHOD THEREOF - In general, in a semiconductor active element such as a normally-off JFET based on SiC in which an impurity diffusion speed is significantly lower than in silicon, gate regions are formed through ion implantation into the side walls of trenches formed in source regions. However, to ensure the performance of the JFET, it is necessary to control the area between the gate regions thereof with high precision. Besides, there is such a problem that, since a heavily doped PN junction is formed by forming the gate regions in the source regions, an increase in junction current cannot be avoided. The present invention provides a normally-off power JFET and a manufacturing method thereof and forms the gate regions according to a multi-epitaxial method which repeats a process including epitaxial growth, ion implantation, and activation annealing a plurality of times. | 08-02-2012 |
20130056754 | ELECTRONIC CIRCUIT DEVICE - A normally-off type silicon carbide junction FET has a problem that the gate thereof is not easy to use due to inferiority in the characteristics of it. This problem occurs because in order to achieve normally-off, the gate voltage should be off at 0V and at the same time, the ON-state gate voltage should be suppressed to about 2.5V to prevent the passage of an electric current through a pn junction between gate and source. Accordingly, a range from the threshold voltage to the ON-state gate voltage is only from about 1 V to 2V and it is difficult to control the gate voltage. Provided in the present invention is an electronic circuit device obtained by coupling, to a gate of a normally-off type silicon carbide junction FET, an element having a capacitance equal to or a little smaller than the gate capacitance of the junction FET. | 03-07-2013 |
20130285071 | SEMICONDUCTOR DEVICE - On a front surface of a region where a junction termination extension structure of a semiconductor device using silicon carbide is formed, a structure having an n-type semiconductor region with a concentration relatively higher than a concentration of an n | 10-31-2013 |
20130334542 | NORMALLY-OFF POWER JFET AND MANUFACTURING METHOD THEREOF - In general, in a semiconductor active element such as a normally-off JFET based on SiC in which an impurity diffusion speed is significantly lower than in silicon, gate regions are formed through ion implantation into the side walls of trenches formed in source regions. However, to ensure the performance of the JFET, it is necessary to control the area between the gate regions thereof with high precision. Besides, there is such a problem that, since a heavily doped PN junction is formed by forming the gate regions in the source regions, an increase in junction current cannot be avoided. The present invention provides a normally-off power JFET and a manufacturing method thereof and forms the gate regions according to a multi-epitaxial method which repeats a process including epitaxial growth, ion implantation, and activation annealing a plurality of times. | 12-19-2013 |
20150041829 | ELECTRONIC CIRCUIT DEVICE - A normally-off type silicon carbide junction FET has a problem that the gate thereof is not easy to use due to inferiority in the characteristics of it. This problem occurs because in order to achieve normally-off, the gate voltage should be off at 0V and at the same time, the ON-state gate voltage should be suppressed to about 2.5V to prevent the passage of an electric current through a pn junction between gate and source. Accordingly, a range from the threshold voltage to the ON-state gate voltage is only from about 1 V to 2V and it is difficult to control the gate voltage. Provided in the present invention is an electronic circuit device obtained by coupling, to a gate of a normally-off type silicon carbide junction FET, an element having a capacitance equal to or a little smaller than the gate capacitance of the junction FET. | 02-12-2015 |
20150060887 | NORMALLY-OFF POWER JFET AND MANUFACTURING METHOD THEREOF - In general, in a semiconductor active element such as a normally-off JFET based on SiC in which an impurity diffusion speed is significantly lower than in silicon, gate regions are formed through ion implantation into the side walls of trenches formed in source regions. However, to ensure the performance of the JFET, it is necessary to control the area between the gate regions thereof with high precision. Besides, there is such a problem that, since a heavily doped PN junction is formed by forming the gate regions in the source regions, an increase in junction current cannot be avoided. The present invention provides a normally-off power JFET and a manufacturing method thereof and forms the gate regions according to a multi-epitaxial method which repeats a process including epitaxial growth, ion implantation, and activation annealing a plurality of times. | 03-05-2015 |
Haruka Takahashi, Tokushima JP
Patent application number | Description | Published |
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20090264404 | Derivatives of 4-piperazin-1-yl-4-benzo[b]thiophene suitable for the treatment of cns disorders - A heterocyclic compound or a salt thereof represented by the formula (1): where R | 10-22-2009 |
20100179322 | Piperazine-substituted benzothiophenes for treatment of mental disorders - The present invention provides a heterocyclic compound represented by the general formula (1): The compound of the present invention has a wide treatment spectrum for mental disorders including central nervous system disorders, no side effects and high safety. | 07-15-2010 |
20110152286 | PIPERAZINE-SUBSTITUTED BENZOTHIOPHENES FOR TREATMENT OF MENTAL DISORDERS - The present invention provides a heterocyclic compound represented by the general formula (1): The compound of the present invention has a wide treatment spectrum for mental disorders including central nervous system disorders, no side effects and high safety. | 06-23-2011 |
20120028920 | DERIVATIVES OF 4-PIPERAZIN-1-YL-4-BENZO[B]THIOPHENE SUITABLE FOR THE TREATMENT OF CNS DISORDERS - A heterocyclic compound or a salt thereof represented by the formula (1): | 02-02-2012 |
20130158044 | PIPERAZINE-SUBSTITUTED BENZOTHIOPHENES FOR TREATMENT OF MENTAL DISORDERS - The present invention provides a heterocyclic compound represented by the general formula (1): The compound of the present invention has a wide treatment spectrum for mental disorders including central nervous system disorders, no side effects and high safety. | 06-20-2013 |
20140163039 | PIPERAZINE-SUBSTITUTED BENZOTHIOPHENES FOR TREATMENT OF MENTAL DISORDERS - The present invention provides a heterocyclic compound represented by the general formula (1): The compound of the present invention has a wide treatment spectrum for mental disorders including central nervous system disorders, no side effects and high safety. | 06-12-2014 |
Haruka Takahashi, Tokyo JP
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20110046113 | AMINE COMPOUND AND USE THEREOF - It is intended to provide novel amine compounds which are efficacious against diseases such as infection with HIV virus, rheumatism and cancer metastasis. Namely, amine compounds represented by the following general formula (1): | 02-24-2011 |
Haruka Taniguchi, Otsu-Shi JP
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20110230330 | DIELECTRIC MATERIAL FOR PLASMA DISPLAY PANEL AND GLASS PLATE FOR PLASMA DISPLAY PANEL - The invention provides a dielectric material for a plasma display panel which can be fired at a low temperature, is less likely to cause warpage in a glass substrate when fired on the glass substrate and can increase the strength of the glass substrate when fired on the glass substrate, and a glass plate for a plasma display panel including a dielectric layer formed using the dielectric material. The dielectric material for a plasma display panel contains ZnO—B | 09-22-2011 |
20110263409 | DIELECTRIC MATERIAL FOR PLASMA DISPLAY PANEL AND GLASS PLATE FOR PLASMA DISPLAY - The invention provides a dielectric material for a plasma display panel which has a low dielectric constant, can be fired at a low temperature, for example, 600° C. or below, causes no warpage in a glass substrate when fired on the glass substrate and can increase the strength of the glass substrate when fired on the glass substrate, and a glass plate for a plasma display panel including a dielectric layer formed using the dielectric material. The dielectric material for a plasma display panel according to the present invention is a dielectric material for a plasma display panel containing ZnO—B | 10-27-2011 |
Haruka Tsuda, Saitama JP
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20080236922 | WINDSHIELD CONTROLLER FOR MOTORCYCLE - A windshield controller for a motorcycle includes a receiver which receives a signal transmitted from a portable communication device; a start permission device which judges whether or not to permit start of an engine based on the signal received by the receiver; and a control device which controllably drives a movable windscreen disposed on a cowling at a front portion of a vehicle body, wherein the control device judges whether or not the portable communication device is away from the vehicle body based on the signal received by the receiver, and when it is judged that the portable communication device is away from the vehicle body, the control device controls to move the movable windscreen to a standby position. | 10-02-2008 |
20090195011 | SCREEN FOR MOTORCYCLE - A screen for a vehicle which allows air flow to flow appropriately along a rear face of a wind screen having an adjustable inclination angle. A baffle plate inclined toward the rear direction of a vehicle body is provided between a cowling which covers a front upper portion of the vehicle body and a movable wind screen. The inclination angle of the baffle plate can be adjusted so that air flow from between the cowling and the movable wind screen flows along a rear face of the movable wind screen. | 08-06-2009 |
Haruka Ueda, Tokyo JP
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20110295544 | METHOD AND DEVICE FOR LIVING SPACE ADDED VALUE EFFICACY INDEX EVALUATION - A measured value for a PMV within a living space is sent to a comfort efficacy evaluating device. Occupancy information (the current number of occupants N) in the living space is sent to the comfort efficacy evaluating device. The comfort efficacy evaluating device calculates a comfort index P as P=1.0−|PMV|/3, and this comfort index P is weighted by the number of occupants N at the time that the comfort index P was taken. In this case, if the number of occupants is relatively high, the weighting is high, and if the number of occupants is relatively low, then the weighting is low. Additionally, the weighted comfort index P is integrated over an evaluation interval, and thus integrated value, or a weighted average based on this integrated value, is used as a comfort efficacy index TP. An evaluation of the efficacy of energy conservation can be performed in the same way, taking into account the current occupancy of the living space. | 12-01-2011 |
20120118986 | CONTROLLING DEVICE AND METHOD - An air conditioning controlling device controlling the volume of a thermal medium that is supplied to an air conditioner through the degree of opening of a control valve, has a room temperature setting value obtaining portion obtaining a room temperature setting value for a controlled area; a supply air temperature measured value obtaining portion obtaining a measured value for a temperature of supply air that is supplied to the controlled area from the air conditioner; a supply air temperature changing portion changing the supply air temperature setting value in accordance with a change in the room temperature setting value; an operating quantity calculating portion calculating an operating quantity based on a deviation between the supply air temperature measured value and the supply air temperature setting value; and an operating quantity outputting portion outputting an operating quantity to a control valve to control the degree of opening of the control valve. | 05-17-2012 |
20120239324 | BUILDING FACILITY OPERATING STATUS EVALUATING METHOD AND DEVICE - Reported information is classified as to if it is transient reported information due to a transient factor. Time bands within an evaluating interval that are other than time bands wherein air conditioning control has occurred in response to a transient report are defined as evaluation-applicable time bands, and the average energy consumption in the evaluation-applicable time bands is calculated as an energy consumption that serves as a basis value. Moreover, an average of the historical values of energy consumption in the transient report response-controlled air-conditioning time bands is calculated as an energy consumption to serve as a comparison value, and the difference between this energy consumption that is the comparison value and the energy consumption Wbase that is the basis value is calculated as a possible energy savings, and used as un evaluation index indicating the operating status of an air-conditioning device in terms of energy savings. | 09-20-2012 |
Haruka Wakayma, Hyogo JP
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20150174075 | METHOD FOR PRODUCING DISINTEGRATING PARTICULATE COMPOSITION COMPRISING ACID-TYPE CARBOXYMETHYLCELLULOSE, DISINTEGRATING PARTICULATE COMPOSITION COMPRISING ACID-TYPE CARBOXYMETHYLCELLULOSE, AND ORALLY DISINTEGRATING TABLET INCLUDING DISINTEGRATING PARTICULATE COMPOSITION COMPRISING ACID-TYPE CARBOXYMETHYLCELLULOSE - An object of the present application is to provide an orally-disintegrating tablet having excellent tablet hardness and disintegrability and a disintegrative particulate composition by which the orally-disintegrating tablet can be obtained with a relatively low tablet compression force and which can provide excellent moldability, as well as a method of producing the same, etc. The present application relates to a method of producing a disintegrative particulate composition including three components consisting of a first disintegrator component of an acid-type carboxymethylcellulose, a second disintegrator component and an excipient, the method including a first wet granulation step using any two of the three components, and a second wet granulation step using granules obtained in the first wet granulation step and the remaining one component of the three components not used in the first wet granulation step; a production method further including a crystalline cellulose as a fourth component; a production method including a third step of mixing a crystalline cellulose into granules obtained in the second wet granulation step; disintegrative particulate compositions obtained by these methods, etc. | 06-25-2015 |
Haruka Yamakawa, Okayama JP
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20100294421 | METHOD FOR MANUFACTURING REINFORCED RUBBER HOSE - An inner mold having, on the outer surface thereof, corrugations matching the shape of the bellows, and an outer mold having, on the inner surface thereof, corrugations matching the shape of the bellows, are used. An airbag that is previously and at least partially formed into a bellows shape is placed on an outer side of the inner mold so as to cover at least a corrugated part with the airbag. A cylindrical preform comprising unvulcanized rubber and a reinforcement material is placed on the outer side of the airbag. An outer mold is placed on the outer side of the preform. A pressurized fluid is supplied between the inner mold and the airbag so as to inflate the airbag. The preform is vulcanized under heating while being pressed against an inner surface of the outer mold, whereby a reinforced rubber hose is manufactured. | 11-25-2010 |
Haruka Yoshida, Tokyo JP
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20130073912 | INFORMATION PROCESSING DEVICE, SERVICE MANAGEMENT METHOD, AND SERVICE MANAGEMENT PROGRAM - When a problem occurs in a service being provided, the degree of influence of the problem is evaluated comprehensively. | 03-21-2013 |
20130117275 | INDEX MONITORING SYSTEM, INDEX MONITORING METHOD AND PROGRAM - Provided are an index monitoring system, an index monitoring method and a program which enable to understand a state of a monitoring target object, including a retention state of an index value. | 05-09-2013 |
20130167017 | DISPLAY PROCESSING DEVICE, DISPLAY PROCESSING METHOD, AND INFORMATION STORAGE MEDIUM STORING PROGRAM - A display processing device includes a storage unit ( | 06-27-2013 |
20130176136 | DISPLAY PROCESSING SYSTEM, DISPLAY PROCESSING METHOD, AND PROGRAM - A display processing system includes a state display unit ( | 07-11-2013 |
20130238389 | INFORMATION PROCESSING DEVICE, AN INFORMATION PROCESSING METHOD AND AN INFORMATION PROCESSING METHOD - When a problem occurs in a system, an evaluation as to whether or not an important information service or an important person receiving the service is influenced, and an evaluation of the degree of the influence, are performed. Accordingly, an information processing device for notifying an information service providing state is provided with: an acquisition unit for acquiring measurement values regarding monitoring target items relating to the information service; an importance degree calculation unit for calculating the degree of importance regarding the information service or a person receiving the service; a determination unit for determining a degree of violation of the conditions, by comparing the measurement values with a plurality of conditions required in relation to the monitoring target items relating to the information service; and an image generation unit for generating an image indicating the degrees of violation of the conditions. | 09-12-2013 |
Haruka Yoshida, Osaka JP
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20140322334 | ORAL SOLID PREPARATION COMPRISING ARIPIPRAZOLE AND METHOD FOR PRODUCING ORAL SOLID PREPARATION COMPRISING ARIPIPRAZOLE - [Object] An object of the present invention is to provide an oral solid preparation that can be produced in a simpler manner than conventional methods, that exhibits high bioavailability and high dissolubility even in persons having low stomach acid, and that can also ensure dissolubility after being allowed to stand for a certain period of time. Another object is to provide a simple method for producing the oral solid preparation. | 10-30-2014 |
20150093441 | ORAL SOLID PREPARATION COMPRISING ARIPIPRAZOLE AND METHOD FOR PRODUCING ORAL SOLID PREPARATION COMPRISING ARIPIPRAZOLE - An object of the present invention is to provide an oral solid preparation that can be produced in a simpler manner than conventional methods, that exhibits high bioavailability and high dissolubility even in persons having low stomach acid, and that can also ensure dissolubility after being allowed to stand for a certain period of time. Another object is to provide a simple method for producing the oral solid preparation. | 04-02-2015 |
20150231076 | ORAL SOLID PREPARATION COMPRISING ARIPIPRAZOLE AND METHOD FOR PRODUCING ORAL SOLID PREPARATION COMPRISING ARIPIPRAZOLE - [Object] An object of the present invention is to provide an oral solid preparation that can be produced in a simpler manner than conventional methods, that exhibits high bioavailability and high dissolubility even in persons having low stomach acid, and that can also ensure dissolubility after being allowed to stand for a certain period of time. Another object is to provide a simple method for producing the oral solid preparation. | 08-20-2015 |