Patent application number | Description | Published |
20080200002 | Plasma Sputtering Film Deposition Method and Equipment - A method for generating metal ions by sputtering a metal target ( | 08-21-2008 |
20090321936 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS, SEMICONDUCTOR DEVICE, COMPUTER PROGRAM AND STORAGE MEDIUM - Provided is a semiconductor device which has excellent adhesiveness to a copper film and a base film thereof and has a small resistance between wirings. The semiconductor device includes a porous insulating layer (SIOC film | 12-31-2009 |
20100015799 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS, COMPUTER PROGRAM AND STORAGE MEDIUM - A semiconductor device, which suppresses formation of an organic impurity layer and has excellent adhesiveness to a copper film and a metal to be a base, is manufactured. A substrate (wafer W) coated with a barrier metal layer (base film) | 01-21-2010 |
20110018651 | POWER COMBINER AND MICROWAVE INTRODUCTION MECHANISM - A power combiner | 01-27-2011 |
20110061814 | MICROWAVE INTRODUCING MECHANISM, MICROWAVE PLASMA SOURCE AND MICROWAVE PLASMA PROCESSING APPARATUS - A microwave introducing mechanism | 03-17-2011 |
20130168389 | MICROWAVE HEATING APPARATUS AND PROCESSING METHOD - Four microwave introduction ports are arranged to deviate from directly above a wafer in such a way that the long sides thereof are in parallel to at least one of the four straight sides. The top surface of a rectifying plate which surrounds the wafer is inclined so as to be widened from the side of the wafer (inner side) toward the side of a sidewall portion (outer side) to form an inclined portion. The inclined portion is disposed to face the four microwave introduction ports in a vertical direction. | 07-04-2013 |
20130168390 | MICROWAVE HEATING APPARATUS AND PROCESSING METHOD - In the microwave heating apparatus, four microwave introduction ports are arranged at positions spaced apart from each other at an angle of about 90° in a ceiling portion of a processing chamber in such a way that the long sides and the short sides thereof are in parallel to inner surfaces of four sidewalls. The microwave introduction port are disposed in such a way that each of the microwave introduction ports are not overlapped with another microwave introduction port whose long sides are in parallel to the long sides of the corresponding microwave introduction port when the corresponding microwave introduction port is moved in translation in a direction perpendicular to the long sides thereof. | 07-04-2013 |
20130180661 | MICROWAVE INTRODUCING MECHANISM, MICROWAVE PLASMA SOURCE AND MICROWAVE PLASMA PROCESSING APPARATUS - The microwave introducing mechanism includes an antenna unit having a planar antenna radiating a microwave into a chamber; a tuner for performing impedance matching; and a heat dissipation device for dissipating a heat from the antenna unit. The tuner has a tuner main body including a tubular outer conductor and a tubular inner conductor to serve as a part of a microwave transmission line; slugs provided between the outer conductor and the inner conductor to be movable along a longitudinal direction of the inner conductor; and a driving device for moving the slugs. The heat dissipation device has a heat pipe configured to transfer the heat of the antenna unit from its heat input end to its heat dissipation end. | 07-18-2013 |
20130192760 | MICROWAVE EMITTING DEVICE AND SURFACE WAVE PLASMA PROCESSING APPARATUS - A microwave emitting device emits a microwave generated by a microwave generation unit into a chamber in a plasma processing apparatus for performing plasma processing by generating a surface wave plasma in the chamber. The device includes: a transmission line having a tubular outer conductor and an inner conductor disposed in the outer conductor to transmit the microwave; an antenna to emit the microwave transmitted through the microwave transmission line into the chamber through slots; a dielectric member to transmit the microwave emitted from the antenna to generate a surface wave; and a DC voltage application member to apply a positive DC voltage to a plasma generation region where a surface wave plasma is generated by the surface wave. | 08-01-2013 |
20140339981 | ANTENNA FOR PLASMA GENERATION, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - An antenna for plasma generation radiates a microwave transmitted through a coaxial waveguide into a processing chamber and propagates the microwave on a metal surface of the processing chamber to convert gas into surface wave plasma. The antenna includes a gas flow path for passing the gas through the antenna, a plurality of gas holes that communicate with the gas flow path and introduce the gas into the processing chamber, and a plurality of slots that are separated from the gas flow path and penetrate through the gas flow path. The slots pass the microwave transmitted through the coaxial waveguide and a slow-wave plate to the processing chamber. A first space between portions of adjacent slots penetrating through the gas flow path is arranged to be wider than a second space between portions of the adjacent slots opening out to a plasma generation space of the processing chamber. | 11-20-2014 |
20140361684 | MICROWAVE EMISSION MECHANISM, MICROWAVE PLASMA SOURCE AND SURFACE WAVE PLASMA PROCESSING APPARATUS - A microwave emission mechanism includes: a transmission path through which a microwave is transmitted; and an antenna section that emits into a chamber the microwave transmitted through the transmission path. The antenna section includes an antenna having a slot through which the microwave is emitted, a dielectric member through which the microwave emitted from the antenna is transmitted and a closed circuit in which a surface current and a displacement current flow. A surface wave is formed in a surface of the dielectric member. The closed circuit has at least: an inner wall of the slot; and the surface and an inner portion of the dielectric member. When a wavelength of the microwave is λ | 12-11-2014 |
20140367377 | MICROWAVE HEATING APPARATUS AND HEATING METHOD - A microwave heating apparatus includes a phase control unit configured to change a phase of a standing wave of microwave introduced into the process chamber by the microwave introduction unit. The phase control unit includes a recessed portion with respect to an inner surface of the bottom wall. The phase control unit is formed of a bottom portion and a fixing plate installed at a lower surface of the bottom portion from the outer side of the process chamber. The phase of the standing wave in the process chamber is changed by the incidence and reflection of the microwave in the recessed portion of the phase control unit surrounded by metallic wall. | 12-18-2014 |
Patent application number | Description | Published |
20090087583 | Film Deposition Method, Film Deposition Apparatus, and Storage Medium - An object to be processed (e.g., semiconductor wafer W) having a recess formed in a surface thereof is placed on a stage | 04-02-2009 |
20090183984 | Seed Film Forming Method, Plasma-Assisted Film Forming System and Storage Medium - The invention is related to A seed film forming method capable of forming a seed film in recesses without forming overhangs. | 07-23-2009 |
20100167540 | Film Forming Method, Plasma Film Forming Apparatus and Storage Medium - Disclosed is a technique for embedding metal in a recess provided in the surface of a process object, such as a semiconductor wafer W, only by plasma sputtering. The metal is copper as a typical example. The recess has a microscopic hole or trench having a diameter or width of 100 nm or less as a typical example. A film forming step and a diffusion step are alternately performed a plurality of times. The film forming step deposits a small amount of a metal film in the recess. The diffusion step moves the deposited metal film toward the bottom portion of the recess. In the film forming step, bias power to be applied to a stage for supporting the wafer W is set to a value ensuring that, on the surface of the wafer W, the rate of metal deposition due to the drawing-in of metal particles is substantially equal to the rate of the sputter etching by plasma. In the diffusion step, the wafer W is maintained at a temperature which permits occurrence of surface diffusion of the metal film deposited in the recess. | 07-01-2010 |
20110150719 | MICROWAVE INTRODUCTION MECHANISM, MICROWAVE PLASMA SOURCE AND MICROWAVE PLASMA PROCESSING APPARATUS - A microwave introduction mechanism ( | 06-23-2011 |
Patent application number | Description | Published |
20120090782 | MICROWAVE PLASMA SOURCE AND PLASMA PROCESSING APPARATUS - There are provided a microwave plasma source and a plasma processing apparatus capable of improving uniformity of a plasma density distribution within a processing chamber by controlling positions of nodes and antinodes of a standing wave of microwave within the processing chamber not to be fixed. The microwave plasma source | 04-19-2012 |
20120222816 | SURFACE WAVE PLASMA GENERATING ANTENNA AND SURFACE WAVE PLASMA PROCESSING APPARATUS - A surface wave plasma generating antenna serves to generate a surface wave plasma in a chamber by radiating into the chamber a microwave transmitted from a microwave output section through a coaxial waveguide including an outer conductor and an inner conductor. The surface wave plasma generating antenna is formed in a planar shape and has a plurality of slots arranged in a circumferential direction, and each joint portion between two adjacent slots in the circumferential direction is overlapped with at least one of the slots in a diametrical direction. | 09-06-2012 |
20120299671 | ELECTROMAGNETIC-RADIATION POWER-SUPPLY MECHANISM AND MICROWAVE INTRODUCTION MECHANISM - An electromagnetic-radiation power-supply mechanism includes a microwave power introduction port provided on the side of the coaxial waveguide, a power line being connected to the microwave power introduction port; and a power supply antenna for radiating the electromagnetic wave power into the waveguide, the power supply antenna being connected to the power line. The power supply antenna includes an antenna body having a first pole connected to the power line and a second pole connected to an inner conductor of the waveguide; and a ring-shaped reflection portion extending from opposite sides of the antenna body. | 11-29-2012 |
20140158302 | MICROWAVE RADIATION ANTENNA, MICROWAVE PLASMA SOURCE AND PLASMA PROCESSING APPARATUS - A microwave radiation antenna includes an antenna body having a microwave radiation surface; a processing gas inlet configured to introduce a processing gas into the antenna body; a gas diffusion space configured to diffuse the processing gas in the antenna body; a plurality of gas outlets provided in the antenna body and configured to discharge the processing gas into the chamber; a plurality of slots provided in the antenna body under a state where the slots are separated from the gas diffusion space and the gas outlets; and an annular dielectric member provided in the microwave radiation surface side of the antenna body to cover a slot formation region where the slots are formed. A metal surface wave is formed in the microwave radiation surface by the microwave radiated through the slots and the annular dielectric member and a surface wave plasma is generated by the metal surface wave. | 06-12-2014 |
20140283747 | PLASMA PROCESSING APPARATUS AND SHOWER PLATE - A plasma processing apparatus including a processing vessel | 09-25-2014 |