Patent application number | Description | Published |
20090314337 | PHOTOVOLTAIC DEVICES - Photovoltaic devices and methods of manufacturing the same are provided. In one example, a photovoltaic device includes: a substrate; a transparent conductive layer deposited on the substrate; a semiconductor layer provided with a P layer, an I layer, and a N layer sequentially deposited on the transparent conductive layer; and a rear electrode deposited on the N layer of the semiconductor layer, wherein the P layer is a P-type oxide semiconductor. | 12-24-2009 |
20100001359 | TRANSPARENT CONDUCTIVE LAYER AND METHOD OF MANUFACTURING THE SAME - A transparent conductive layer includes a substrate, a first conductive layer disposed on the substrate, and a second conductive layer disposed on the first conductive layer, wherein the second conductive layer comprises a textured surface and an opening which exposes the first conductive layer, wherein the opening comprises a diameter of about 1 micrometer to about 3 micrometers. Also disclosed is a method of manufacturing the transparent conductive layer and a photoelectric device. | 01-07-2010 |
20100013037 | SOLAR CELL AND MANUFACTURING METHOD THEREOF - A method for manufacturing a solar cell is provided. The manufacturing method includes: depositing a transparent conductive layer on a substrate; patterning the transparent conductive layer; forming a semiconductor layer including deposited on the patterned transparent conductive layer; patterning the semiconductor layer; coating a metal powder on the patterned semiconductor layer; forming a rear electrode layer on the semiconductor layer coated with the metal powder; and patterning the rear electrode layer and the semiconductor layer. This method is useful for producing a solar cell with improved light absorption efficiency. | 01-21-2010 |
20100024871 | PHOTOVOLTAIC DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a photovoltaic device includes preparing a semiconductor substrate having a light incidence surface receiving light and including single crystalline silicon, wet-etching the light incidence surface to form a plurality of first protrusions on the light incidence surface, dry etching a plurality of surfaces of the first protrusions to form a plurality of second protrusions on the plurality of surfaces of the first protrusions, and forming a semiconductor layer on the light incidence surface. The method further includes forming a first electrode on the semiconductor layer and forming a second electrode on a rear surface of the semiconductor substrate facing the light incidence surface. | 02-04-2010 |
20100037940 | STACKED SOLAR CELL - A solar cell including a first semiconductor layer formed by sequentially stacking a positive (P) layer, an intrinsic (I) layer and a negative (N) layer, wherein the P layer comprises amorphous silicon carbide and at least one of the I and N layers comprises micro-crystalline silicon. | 02-18-2010 |
20100059111 | Solar Cell Module having Multiple Module Layers and Manufacturing Method Thereof - A solar cell module includes a bottom module layer formed on a first substrate and absorbing a greater fraction of light energy in a first wavelength band than in a second wavelength band. The first wavelength band includes a shorter wavelength than any wavelength in the second wavelength band. A top module layer is formed on the bottom module layer to absorb a greater fraction of light energy in the second wavelength band than in the first wavelength band. A second substrate is formed on the top module layer. A reflecting filter is provided between the bottom module layer and the top module layer. The reflecting filter reflects a greater fraction of light energy in the first wavelength band than in the second wavelength band and transmits a greater fraction of light energy in the second wavelength band than in the first wavelength band. | 03-11-2010 |
20100154869 | PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF - Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer. | 06-24-2010 |
20110011448 | THIN FILM SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - A thin film solar cell includes a plurality of a unit solar cell each including an active area and a non-active area. Each unit solar cell further includes a first electrode, a first active layer disposed on the first electrode, an interlayer disposed on the first active layer, a second active layer disposed on the interlayer, and a second electrode disposed on the second active layer. The active area includes a first portion where the interlayer is disposed, and a second portion where the interlayer is not disposed. | 01-20-2011 |
20110143483 | TRANSPARENT CONDUCTIVE LAYER AND METHOD OF MANUFACTURING THE SAME - A transparent conductive layer includes a substrate, a first conductive layer disposed on the substrate, and a second conductive layer disposed on the first conductive layer, wherein the second conductive layer comprises a textured surface and an opening which exposes the first conductive layer, wherein the opening comprises a diameter of about 1 micrometer to about 3 micrometers. Also disclosed is a method of manufacturing the transparent conductive layer and a photoelectric device. | 06-16-2011 |
20120129295 | METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer. | 05-24-2012 |